KR20140016190A - 고종횡비 은 나노와이어의 제조방법 - Google Patents

고종횡비 은 나노와이어의 제조방법 Download PDF

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Publication number
KR20140016190A
KR20140016190A KR1020130089597A KR20130089597A KR20140016190A KR 20140016190 A KR20140016190 A KR 20140016190A KR 1020130089597 A KR1020130089597 A KR 1020130089597A KR 20130089597 A KR20130089597 A KR 20130089597A KR 20140016190 A KR20140016190 A KR 20140016190A
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KR
South Korea
Prior art keywords
silver
shell
core
carrier
component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020130089597A
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English (en)
Korean (ko)
Inventor
제롬 클라락크
가로 카나리안
루지아 부
재범 주
피터 트레포나스
Original Assignee
롬 앤드 하스 일렉트로닉 머트어리얼즈, 엘.엘.씨.
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Application filed by 롬 앤드 하스 일렉트로닉 머트어리얼즈, 엘.엘.씨. filed Critical 롬 앤드 하스 일렉트로닉 머트어리얼즈, 엘.엘.씨.
Publication of KR20140016190A publication Critical patent/KR20140016190A/ko
Ceased legal-status Critical Current

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Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F9/00Making metallic powder or suspensions thereof
    • B22F9/16Making metallic powder or suspensions thereof using chemical processes
    • B22F9/18Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds
    • B22F9/24Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K7/00Constructional details common to different types of electric apparatus
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00Nanotechnology for materials or surface science, e.g. nanocomposites
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/05Metallic powder characterised by the size or surface area of the particles
    • B22F1/054Nanosized particles
    • B22F1/0547Nanofibres or nanotubes
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/10Metallic powder containing lubricating or binding agents; Metallic powder containing organic material
    • B22F1/102Metallic powder coated with organic material
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F9/00Making metallic powder or suspensions thereof
    • B22F9/02Making metallic powder or suspensions thereof using physical processes
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82BNANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02Elements
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/62Whiskers or needles
    • DTEXTILES; PAPER
    • D01NATURAL OR MAN-MADE THREADS OR FIBRES; SPINNING
    • D01DMECHANICAL METHODS OR APPARATUS IN THE MANUFACTURE OF ARTIFICIAL FILAMENTS, THREADS, FIBRES, BRISTLES OR RIBBONS
    • D01D5/00Formation of filaments, threads, or the like
    • D01D5/0007Electro-spinning
    • DTEXTILES; PAPER
    • D01NATURAL OR MAN-MADE THREADS OR FIBRES; SPINNING
    • D01DMECHANICAL METHODS OR APPARATUS IN THE MANUFACTURE OF ARTIFICIAL FILAMENTS, THREADS, FIBRES, BRISTLES OR RIBBONS
    • D01D5/00Formation of filaments, threads, or the like
    • D01D5/28Formation of filaments, threads, or the like while mixing different spinning solutions or melts during the spinning operation; Spinnerette packs therefor
    • D01D5/30Conjugate filaments; Spinnerette packs therefor
    • D01D5/34Core-skin structure; Spinnerette packs therefor
    • DTEXTILES; PAPER
    • D01NATURAL OR MAN-MADE THREADS OR FIBRES; SPINNING
    • D01FCHEMICAL FEATURES IN THE MANUFACTURE OF ARTIFICIAL FILAMENTS, THREADS, FIBRES, BRISTLES OR RIBBONS; APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OF CARBON FILAMENTS
    • D01F1/00General methods for the manufacture of artificial filaments or the like
    • D01F1/02Addition of substances to the spinning solution or to the melt
    • D01F1/09Addition of substances to the spinning solution or to the melt for making electroconductive or anti-static filaments
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/20Electrodes
    • H10F77/244Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Textile Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Composite Materials (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Powder Metallurgy (AREA)
  • Manufacture Of Metal Powder And Suspensions Thereof (AREA)
  • Inorganic Fibers (AREA)
  • Manufacturing Of Electric Cables (AREA)
KR1020130089597A 2012-07-30 2013-07-29 고종횡비 은 나노와이어의 제조방법 Ceased KR20140016190A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201261677211P 2012-07-30 2012-07-30
US61/677,211 2012-07-30

Publications (1)

Publication Number Publication Date
KR20140016190A true KR20140016190A (ko) 2014-02-07

Family

ID=49917948

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020130089597A Ceased KR20140016190A (ko) 2012-07-30 2013-07-29 고종횡비 은 나노와이어의 제조방법

Country Status (7)

Country Link
US (1) US9148969B2 (enExample)
JP (1) JP6387221B2 (enExample)
KR (1) KR20140016190A (enExample)
CN (1) CN103588166B (enExample)
DE (1) DE102013012548A1 (enExample)
FR (1) FR2993875B1 (enExample)
TW (1) TWI505995B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160077457A (ko) * 2014-12-23 2016-07-04 전자부품연구원 전극 및 그의 제조방법

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9295153B2 (en) * 2012-11-14 2016-03-22 Rohm And Haas Electronic Materials Llc Method of manufacturing a patterned transparent conductor
EP2991083B1 (en) * 2013-04-26 2021-06-09 Showa Denko K.K. Method for manufacturing electroconductive pattern and electroconductive pattern-formed substrate
US9353460B2 (en) * 2013-09-24 2016-05-31 Xerox Corporation Method for forming metal structures
DE102015013239A1 (de) * 2014-10-28 2016-04-28 Dow Global Technologies Llc Hydrothermalverfahren zur Herstellung von Silber-Nanodrähten
JP6526739B2 (ja) * 2016-06-02 2019-06-05 Dowaエレクトロニクス株式会社 銀ナノワイヤおよびその製造法並びに銀ナノワイヤインクおよび透明導電膜
WO2019124584A1 (ko) * 2017-12-21 2019-06-27 희성전자 주식회사 금속 나노 와이어의 제조방법 및 이에 의해 제조된 금속 나노 와이어
CN114496352A (zh) * 2020-11-12 2022-05-13 天材创新材料科技(厦门)有限公司 纳米银线保护层结构及其制备方法

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Publication number Priority date Publication date Assignee Title
TW200728527A (en) * 2006-01-26 2007-08-01 Singland Biotech Int L Co Ltd A process for the nano-silver fabric through electro spinning filaments
CN100595355C (zh) * 2007-08-03 2010-03-24 东南大学 制备有机聚合物包裹单晶氧化锌共轴复合纳米线的方法
DE102007040762A1 (de) * 2007-08-29 2009-03-05 Bayer Materialscience Ag Vorrichtung und Verfahren zur Herstellung von elektrisch leitenden Nanostrukturen mittels Elektrospinnen
JP5306760B2 (ja) 2008-09-30 2013-10-02 富士フイルム株式会社 透明導電体、タッチパネル、及び太陽電池パネル
CN101580978B (zh) * 2009-06-09 2012-01-11 东华大学 一种海洋生物抗菌纳米纤维及其制备方法
TWI420540B (zh) * 2009-09-14 2013-12-21 Ind Tech Res Inst 藉由光能或熱能成形之導電材料、導電材料之製備方法以及導電組合物
CN102234846B (zh) * 2010-04-28 2013-08-21 中国科学院化学研究所 具有微米管套纳米线结构的核/壳纤维及其制备方法
KR101407209B1 (ko) * 2010-10-07 2014-06-16 포항공과대학교 산학협력단 미세 패턴 형성 방법 및 이를 이용한 미세 채널 트랜지스터 및 미세 채널 발광트랜지스터의 형성방법
CN102021677B (zh) * 2010-10-13 2013-07-03 清华大学 含过渡金属与氮元素的碳纳米纤维的制备方法及其在燃料电池催化剂中的应用
CN102352548B (zh) * 2011-07-25 2013-05-01 浙江理工大学 一种静电纺丝制备SiC/C纳米纤维膜的方法
US9040114B2 (en) * 2012-08-29 2015-05-26 Rohm And Haas Electronic Material Llc Method of manufacturing silver miniwire films

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160077457A (ko) * 2014-12-23 2016-07-04 전자부품연구원 전극 및 그의 제조방법

Also Published As

Publication number Publication date
FR2993875A1 (fr) 2014-01-31
DE102013012548A1 (de) 2014-03-06
JP6387221B2 (ja) 2018-09-05
TWI505995B (zh) 2015-11-01
TW201410614A (zh) 2014-03-16
US20140027954A1 (en) 2014-01-30
FR2993875B1 (fr) 2015-03-13
JP2014053291A (ja) 2014-03-20
CN103588166A (zh) 2014-02-19
CN103588166B (zh) 2016-06-29
US9148969B2 (en) 2015-09-29

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