CN103563099A - 键合到支撑衬底的发光器件 - Google Patents

键合到支撑衬底的发光器件 Download PDF

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Publication number
CN103563099A
CN103563099A CN201280026289.3A CN201280026289A CN103563099A CN 103563099 A CN103563099 A CN 103563099A CN 201280026289 A CN201280026289 A CN 201280026289A CN 103563099 A CN103563099 A CN 103563099A
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CN
China
Prior art keywords
light emitting
emitting device
semiconductor light
metal
layer
Prior art date
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Pending
Application number
CN201280026289.3A
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English (en)
Chinese (zh)
Inventor
J.C.布哈特
S.阿克拉姆
D.A.斯泰格瓦德
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Lumileds Holding BV
Original Assignee
Koninklijke Philips NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Koninklijke Philips NV filed Critical Koninklijke Philips NV
Priority to CN202010107160.1A priority Critical patent/CN111509103A/zh
Publication of CN103563099A publication Critical patent/CN103563099A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8314—Electrodes characterised by their shape extending at least partially onto an outer side surface of the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07251—Connecting or disconnecting of bump connectors characterised by changes in properties of the bump connectors during connecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H10W72/252—Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)
CN201280026289.3A 2011-06-01 2012-05-22 键合到支撑衬底的发光器件 Pending CN103563099A (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202010107160.1A CN111509103A (zh) 2011-06-01 2012-05-22 键合到支撑衬底的发光器件

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161491920P 2011-06-01 2011-06-01
US61/491,920 2011-06-01
PCT/IB2012/052556 WO2012164437A2 (en) 2011-06-01 2012-05-22 Light emitting device bonded to a support substrate

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN202010107160.1A Division CN111509103A (zh) 2011-06-01 2012-05-22 键合到支撑衬底的发光器件

Publications (1)

Publication Number Publication Date
CN103563099A true CN103563099A (zh) 2014-02-05

Family

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Family Applications (2)

Application Number Title Priority Date Filing Date
CN201280026289.3A Pending CN103563099A (zh) 2011-06-01 2012-05-22 键合到支撑衬底的发光器件
CN202010107160.1A Pending CN111509103A (zh) 2011-06-01 2012-05-22 键合到支撑衬底的发光器件

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Country Status (8)

Country Link
US (1) US20140077246A1 (cg-RX-API-DMAC7.html)
EP (1) EP2715807B8 (cg-RX-API-DMAC7.html)
JP (3) JP2014515560A (cg-RX-API-DMAC7.html)
KR (1) KR20140034262A (cg-RX-API-DMAC7.html)
CN (2) CN103563099A (cg-RX-API-DMAC7.html)
RU (1) RU2604956C2 (cg-RX-API-DMAC7.html)
TW (1) TWI617055B (cg-RX-API-DMAC7.html)
WO (1) WO2012164437A2 (cg-RX-API-DMAC7.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107980183A (zh) * 2015-08-12 2018-05-01 欧司朗光电半导体有限公司 半导体芯片

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103650171B (zh) 2011-07-15 2018-09-18 亮锐控股有限公司 将半导体装置结合到支持衬底的方法
US20140209961A1 (en) * 2013-01-30 2014-07-31 Luxo-Led Co., Limited Alternating current light emitting diode flip-chip
KR20160032221A (ko) 2013-07-18 2016-03-23 코닌클리케 필립스 엔.브이. 발광 디바이스들의 웨이퍼의 다이싱
JP6256026B2 (ja) * 2014-01-17 2018-01-10 日亜化学工業株式会社 発光装置及び発光装置の製造方法
DE102014116141B4 (de) * 2014-11-05 2022-07-28 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung zumindest eines optoelektronischen Halbleiterchips, optoelektronischer Halbleiterchip sowie optoelektronisches Halbleiterbauelement
FR3033939B1 (fr) 2015-03-20 2018-04-27 Commissariat A L'energie Atomique Et Aux Energies Alternatives Dispositif optoelectronique a diode electroluminescente
KR102441311B1 (ko) * 2015-04-20 2022-09-08 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광소자
DE102016113193A1 (de) * 2016-07-18 2018-01-18 Osram Opto Semiconductors Gmbh Bauteil mit geometrisch angepasster Kontaktstruktur und dessen Herstellungsverfahren
US10186478B2 (en) 2016-12-30 2019-01-22 Texas Instruments Incorporated Packaged semiconductor device with a particle roughened surface
JP6900571B2 (ja) * 2017-08-03 2021-07-07 ルミレッズ リミテッド ライアビリティ カンパニー 発光装置を製造する方法
TWI642335B (zh) * 2017-12-11 2018-11-21 欣興電子股份有限公司 電路板及其製造方法
EP3528296B1 (en) * 2018-02-16 2020-06-03 Nichia Corporation Light emitting element and light emitting device
US10374386B1 (en) * 2018-06-07 2019-08-06 Finisar Corporation Chip on carrier
JP7385111B2 (ja) * 2019-09-26 2023-11-22 日亜化学工業株式会社 発光装置の製造方法及び発光装置
RU195271U1 (ru) * 2019-11-25 2020-01-21 федеральное государственное бюджетное образовательное учреждение высшего образования "Новгородский государственный университет имени Ярослава Мудрого" Арсенид-галлиевый магнитоэлектрический диод
DE102021119003A1 (de) * 2021-07-22 2023-01-26 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches halbleiterelement und optoelektronisches bauelement
KR102552204B1 (ko) 2022-11-08 2023-07-06 박영우 Led를 이용한 기능성 수중 촬영시스템

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1121090A (zh) * 1994-04-05 1996-04-24 摩托罗拉公司 通过形成共价键粘合聚酰亚胺表面的方法
US20070096130A1 (en) * 2005-06-09 2007-05-03 Philips Lumileds Lighting Company, Llc LED Assembly Having Maximum Metal Support for Laser Lift-Off of Growth Substrate
CN101097855A (zh) * 2006-06-28 2008-01-02 财团法人工业技术研究院 氮化物半导体衬底的制造方法及复合材料衬底
CN101512783A (zh) * 2006-05-02 2009-08-19 三菱化学株式会社 半导体发光元件
US20100025713A1 (en) * 2008-08-01 2010-02-04 Tao Chin-San Wafer-scaled light-emitting structure
JP2010103186A (ja) * 2008-10-21 2010-05-06 Sony Corp 半導体発光装置の製造方法

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE59809873D1 (de) * 1997-05-27 2003-11-13 Osram Opto Semiconductors Gmbh Verfahren zur herstellung eines lichtemittierenden bauelementes
US6455878B1 (en) * 2001-05-15 2002-09-24 Lumileds Lighting U.S., Llc Semiconductor LED flip-chip having low refractive index underfill
JP4447806B2 (ja) * 2001-09-26 2010-04-07 スタンレー電気株式会社 発光装置
JP4214704B2 (ja) * 2002-03-20 2009-01-28 日亜化学工業株式会社 半導体素子
JP3962282B2 (ja) * 2002-05-23 2007-08-22 松下電器産業株式会社 半導体装置の製造方法
JP4123830B2 (ja) * 2002-05-28 2008-07-23 松下電工株式会社 Ｌｅｄチップ
US6876008B2 (en) 2003-07-31 2005-04-05 Lumileds Lighting U.S., Llc Mount for semiconductor light emitting device
TWI246783B (en) * 2003-09-24 2006-01-01 Matsushita Electric Works Ltd Light-emitting device and its manufacturing method
US9368428B2 (en) * 2004-06-30 2016-06-14 Cree, Inc. Dielectric wafer level bonding with conductive feed-throughs for electrical connection and thermal management
EP1774598B1 (en) * 2004-06-30 2011-09-14 Cree, Inc. Chip-scale methods for packaging light emitting devices and chip-scale packaged light emitting devices
JP4535834B2 (ja) * 2004-10-18 2010-09-01 パナソニック電工株式会社 発光素子とその製造方法
TWI244228B (en) * 2005-02-03 2005-11-21 United Epitaxy Co Ltd Light emitting device and manufacture method thereof
US7335924B2 (en) * 2005-07-12 2008-02-26 Visual Photonics Epitaxy Co., Ltd. High-brightness light emitting diode having reflective layer
JP2006279080A (ja) * 2006-07-10 2006-10-12 Sanyo Electric Co Ltd 発光素子ウエハの固定方法
JP2009105123A (ja) * 2007-10-22 2009-05-14 Showa Denko Kk 発光ダイオードおよびその製造方法
US8878219B2 (en) * 2008-01-11 2014-11-04 Cree, Inc. Flip-chip phosphor coating method and devices fabricated utilizing method
TW201010122A (en) * 2008-08-21 2010-03-01 Univ Nat Central Flip-chip light-emitting diode having the epitaxy strengthening layer, and fabrication method thereof
US9117944B2 (en) * 2008-09-24 2015-08-25 Koninklijke Philips N.V. Semiconductor light emitting devices grown on composite substrates
JP4724222B2 (ja) * 2008-12-12 2011-07-13 株式会社東芝 発光装置の製造方法
JP5518502B2 (ja) * 2009-01-27 2014-06-11 シチズン電子株式会社 発光ダイオードの製造方法
KR101007130B1 (ko) * 2009-02-18 2011-01-10 엘지이노텍 주식회사 발광소자 및 그 제조방법
JP4871973B2 (ja) * 2009-04-28 2012-02-08 株式会社沖データ 半導体薄膜素子の製造方法並びに半導体ウエハ、及び、半導体薄膜素子
JP4686625B2 (ja) * 2009-08-03 2011-05-25 株式会社東芝 半導体発光装置の製造方法
JP5534763B2 (ja) * 2009-09-25 2014-07-02 株式会社東芝 半導体発光装置の製造方法及び半導体発光装置
JP5378130B2 (ja) * 2009-09-25 2013-12-25 株式会社東芝 半導体発光装置
JP2011071272A (ja) * 2009-09-25 2011-04-07 Toshiba Corp 半導体発光装置及びその製造方法
TWI505428B (zh) * 2010-03-11 2015-10-21 精材科技股份有限公司 晶片封裝體及其形成方法
KR101762173B1 (ko) * 2011-01-13 2017-08-04 삼성전자 주식회사 웨이퍼 레벨 발광 소자 패키지 및 그의 제조 방법

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1121090A (zh) * 1994-04-05 1996-04-24 摩托罗拉公司 通过形成共价键粘合聚酰亚胺表面的方法
US20070096130A1 (en) * 2005-06-09 2007-05-03 Philips Lumileds Lighting Company, Llc LED Assembly Having Maximum Metal Support for Laser Lift-Off of Growth Substrate
CN101512783A (zh) * 2006-05-02 2009-08-19 三菱化学株式会社 半导体发光元件
CN101097855A (zh) * 2006-06-28 2008-01-02 财团法人工业技术研究院 氮化物半导体衬底的制造方法及复合材料衬底
US20100025713A1 (en) * 2008-08-01 2010-02-04 Tao Chin-San Wafer-scaled light-emitting structure
JP2010103186A (ja) * 2008-10-21 2010-05-06 Sony Corp 半導体発光装置の製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107980183A (zh) * 2015-08-12 2018-05-01 欧司朗光电半导体有限公司 半导体芯片
CN107980183B (zh) * 2015-08-12 2020-03-03 欧司朗光电半导体有限公司 半导体芯片

Also Published As

Publication number Publication date
KR20140034262A (ko) 2014-03-19
EP2715807A2 (en) 2014-04-09
JP2014515560A (ja) 2014-06-30
US20140077246A1 (en) 2014-03-20
TWI617055B (zh) 2018-03-01
TW201306322A (zh) 2013-02-01
EP2715807B1 (en) 2018-05-16
WO2012164437A3 (en) 2013-01-17
CN111509103A (zh) 2020-08-07
RU2013158689A (ru) 2015-07-20
WO2012164437A2 (en) 2012-12-06
JP2017108156A (ja) 2017-06-15
RU2604956C2 (ru) 2016-12-20
JP2019114804A (ja) 2019-07-11
EP2715807B8 (en) 2018-10-24

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Effective date of registration: 20180326

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Application publication date: 20140205