RU2013158689A - Светоизлучающее устройство, присоединенное к опорной подложке - Google Patents

Светоизлучающее устройство, присоединенное к опорной подложке Download PDF

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RU2013158689A
RU2013158689A RU2013158689/28A RU2013158689A RU2013158689A RU 2013158689 A RU2013158689 A RU 2013158689A RU 2013158689/28 A RU2013158689/28 A RU 2013158689/28A RU 2013158689 A RU2013158689 A RU 2013158689A RU 2013158689 A RU2013158689 A RU 2013158689A
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emitting device
semiconductor light
light emitting
edge
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Джером Чандра БХАТ
Салман АКРАМ
Дэниел Александер СТЕЙДЖЕРУОЛД
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Конинклейке Филипс Н.В.
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Abstract

1. Структура, содержащая:опорную подложку, содержащую тело и множество сквозных отверстий, проходящих через всю толщину тела; иполупроводниковое светоизлучающее устройство, содержащее светоизлучающий слой, размещенный между областью n-типа и областью p-типа, причем полупроводниковое светоизлучающее устройство присоединено к опорной подложке посредством диэлектрического соединяющего слоя;при этом опорная подложка является не более широкой, чем полупроводниковое светоизлучающее устройство.2. Структура по п. 1, в которой область n-типа расположена с отступом от края полупроводникового светоизлучающего устройства.3. Структура по п. 2, которая дополнительно содержащая полимерный слой, размещенный между краем области n-типа и краем полупроводникового светоизлучающего устройства.4. Структура по п. 1 дополнительно содержащая металлический контакт, размещенный на области n-типа.5. Структура по п. 4, в которой металлический контакт проходит по боковой стенке на краю области n-типа.6. Структура по п. 4, в которой:металлический контакт расположен с отступом от края области n-типа; иотражающая диэлектрическая структура размещена на внешней части и боковой стенке области n-типа.7. Структура по п. 1, в которой соединяющий слой содержит множество металлических областей, отделенных, по меньшей мере, одной диэлектрической областью.8. Структура по п. 7, в которой множество сквозных отверстий, проходящих через всю толщину тела, открывают множество металлических областей.9. Структура по п. 1, в которой соединяющий слой содержит полимер.10. Структура по п. 9, в которой множество сквозных отверстий, проходящих через всю толщину тела, проходит

Claims (15)

1. Структура, содержащая:
опорную подложку, содержащую тело и множество сквозных отверстий, проходящих через всю толщину тела; и
полупроводниковое светоизлучающее устройство, содержащее светоизлучающий слой, размещенный между областью n-типа и областью p-типа, причем полупроводниковое светоизлучающее устройство присоединено к опорной подложке посредством диэлектрического соединяющего слоя;
при этом опорная подложка является не более широкой, чем полупроводниковое светоизлучающее устройство.
2. Структура по п. 1, в которой область n-типа расположена с отступом от края полупроводникового светоизлучающего устройства.
3. Структура по п. 2, которая дополнительно содержащая полимерный слой, размещенный между краем области n-типа и краем полупроводникового светоизлучающего устройства.
4. Структура по п. 1 дополнительно содержащая металлический контакт, размещенный на области n-типа.
5. Структура по п. 4, в которой металлический контакт проходит по боковой стенке на краю области n-типа.
6. Структура по п. 4, в которой:
металлический контакт расположен с отступом от края области n-типа; и
отражающая диэлектрическая структура размещена на внешней части и боковой стенке области n-типа.
7. Структура по п. 1, в которой соединяющий слой содержит множество металлических областей, отделенных, по меньшей мере, одной диэлектрической областью.
8. Структура по п. 7, в которой множество сквозных отверстий, проходящих через всю толщину тела, открывают множество металлических областей.
9. Структура по п. 1, в которой соединяющий слой содержит полимер.
10. Структура по п. 9, в которой множество сквозных отверстий, проходящих через всю толщину тела, проходит через полимерный соединяющий слой к металлическим слоям на полупроводниковом светоизлучающем устройстве.
11. Структура по п. 1, в которой соединяющий слой является первым соединяющим слоем, образованным на полупроводниковом светоизлучающем устройстве, при этом структура дополнительно содержит второй соединяющий слой, образованный на опорной подложке.
12. Структура по п. 11, в которой первый и второй соединяющие слои являются диэлектрическими слоями.
13. Структура по п. 11, в которой по меньшей мере один из первого и второго соединяющего слоя содержит оксид кремния.
14. Структура по п. 11, в которой множество сквозных отверстий, проходящих через всю толщину тела, проходят как через первый, так и через второй соединяющие слои, чтобы открыть металлические слои на полупроводниковом светоизлучающем устройстве.
15. Структура по п. 1, дополнительно содержащая слой преобразования длины волны, который размещен на полупроводниковом светоизлучающем устройстве.
RU2013158689/28A 2011-06-01 2012-05-22 Светоизлучающее устройство, присоединенное к опорной подложке RU2604956C2 (ru)

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US201161491920P 2011-06-01 2011-06-01
US61/491,920 2011-06-01
PCT/IB2012/052556 WO2012164437A2 (en) 2011-06-01 2012-05-22 Light emitting device bonded to a support substrate

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US (1) US20140077246A1 (ru)
EP (1) EP2715807B8 (ru)
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KR (1) KR20140034262A (ru)
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EP2715807B8 (en) 2018-10-24
WO2012164437A2 (en) 2012-12-06
TW201306322A (zh) 2013-02-01
RU2604956C2 (ru) 2016-12-20
WO2012164437A3 (en) 2013-01-17
JP2019114804A (ja) 2019-07-11
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JP2014515560A (ja) 2014-06-30
EP2715807A2 (en) 2014-04-09

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