CN103531600A - 放射线检测装置及其制造方法 - Google Patents

放射线检测装置及其制造方法 Download PDF

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Publication number
CN103531600A
CN103531600A CN201310270654.1A CN201310270654A CN103531600A CN 103531600 A CN103531600 A CN 103531600A CN 201310270654 A CN201310270654 A CN 201310270654A CN 103531600 A CN103531600 A CN 103531600A
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China
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layer
pixel array
sensor substrate
sealing layer
sealing
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Pending
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CN201310270654.1A
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English (en)
Chinese (zh)
Inventor
野村庆一
长野和美
冈田聪
石田阳平
猿田尚志郎
佐佐木庆人
市村知昭
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Canon Inc
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Canon Inc
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Application filed by Canon Inc filed Critical Canon Inc
Publication of CN103531600A publication Critical patent/CN103531600A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H10F39/1898—Indirect radiation image sensors, e.g. using luminescent members
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/804—Containers or encapsulations

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  • Measurement Of Radiation (AREA)
CN201310270654.1A 2012-07-04 2013-07-01 放射线检测装置及其制造方法 Pending CN103531600A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012-150751 2012-07-04
JP2012150751A JP6071283B2 (ja) 2012-07-04 2012-07-04 放射線検出装置及びその製造方法

Publications (1)

Publication Number Publication Date
CN103531600A true CN103531600A (zh) 2014-01-22

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CN201310270654.1A Pending CN103531600A (zh) 2012-07-04 2013-07-01 放射线检测装置及其制造方法

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US (1) US9054012B2 (enExample)
JP (1) JP6071283B2 (enExample)
CN (1) CN103531600A (enExample)

Cited By (2)

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CN105989906A (zh) * 2015-03-18 2016-10-05 佳能株式会社 放射线检测装置、放射线成像系统和制造方法
CN116722023B (zh) * 2023-08-10 2023-12-01 奕瑞影像科技（太仓）有限公司 一种适用于dr平板探测器的tft核心组件及其制备方法

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EP3004930B1 (en) * 2013-05-24 2019-07-10 Teledyne Dalsa B.V. A moisture protection structure for a device and a fabrication method thereof
JP2015021752A (ja) 2013-07-16 2015-02-02 キヤノン株式会社 放射線撮像装置、その製造方法及び放射線検査装置
JP6310216B2 (ja) 2013-09-06 2018-04-11 キヤノン株式会社 放射線検出装置及びその製造方法並びに放射線検出システム
JP2015096823A (ja) 2013-11-15 2015-05-21 浜松ホトニクス株式会社 放射線検出器、及び放射線検出器の製造方法
JP6310703B2 (ja) * 2014-01-21 2018-04-11 株式会社日立製作所 放射線検出器とそれを用いたｘ線ｃｔ装置
JP6333034B2 (ja) * 2014-04-11 2018-05-30 キヤノン株式会社 放射線撮像装置の製造方法
US10456098B2 (en) 2014-11-21 2019-10-29 Teledyne Digital Imaging, Inc. Mammography detector with small chest distance
JP6512830B2 (ja) 2015-01-09 2019-05-15 キヤノン株式会社 放射線撮像装置、その製造方法及び放射線検査装置
JP6487263B2 (ja) * 2015-04-20 2019-03-20 浜松ホトニクス株式会社 放射線検出器及びその製造方法
JP6191728B2 (ja) 2015-08-10 2017-09-06 大日本印刷株式会社 イメージセンサモジュール
US11156727B2 (en) * 2015-10-02 2021-10-26 Varian Medical Systems, Inc. High DQE imaging device
JP6778118B2 (ja) 2017-01-13 2020-10-28 キヤノン株式会社 放射線撮像装置及び放射線撮像システム
CN110869809B (zh) 2017-07-10 2023-07-25 佳能株式会社 放射线成像装置和放射线成像系统
JP7030478B2 (ja) 2017-11-09 2022-03-07 キヤノン株式会社 撮影台および放射線撮影システム
JP7067912B2 (ja) 2017-12-13 2022-05-16 キヤノン株式会社 放射線撮像装置および放射線撮像システム
JP7325295B2 (ja) * 2019-10-24 2023-08-14 浜松ホトニクス株式会社 シンチレータパネル、放射線検出器、シンチレータパネルの製造方法、及び、放射線検出器の製造方法

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US5179284A (en) * 1991-08-21 1993-01-12 General Electric Company Solid state radiation imager having a reflective and protective coating
US6608312B1 (en) * 1999-09-03 2003-08-19 Canon Kabushiki Kaisha Information reading apparatus, method of producing same, and radiation imaging system having same
US7265371B2 (en) * 2004-06-10 2007-09-04 Konica Minolta Medical & Graphic, Inc. Radiation image conversion panel
US20080116381A1 (en) * 2006-11-22 2008-05-22 Masashi Kondo Scintillator panel, method of manufacturing the same and radiation imaging apparatus

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JP3405706B2 (ja) * 1997-02-14 2003-05-12 浜松ホトニクス株式会社 放射線検出素子
EP1678525A1 (en) 2003-10-22 2006-07-12 Canon Kabushiki Kaisha Radiation detection device, scintillator panel, method of making the same, making apparatus, and radiation image pick-up system
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JP2005246193A (ja) * 2004-03-03 2005-09-15 Konica Minolta Holdings Inc 複合皮膜の製造方法、溶射用粒子、複合皮膜及びそれを用いた放射線画像変換パネル
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JP4266898B2 (ja) 2004-08-10 2009-05-20 キヤノン株式会社 放射線検出装置とその製造方法および放射線撮像システム
JP4594188B2 (ja) 2004-08-10 2010-12-08 キヤノン株式会社 放射線検出装置及び放射線検出システム
JP4208790B2 (ja) 2004-08-10 2009-01-14 キヤノン株式会社 放射線検出装置の製造方法
JP4671449B2 (ja) * 2004-08-10 2011-04-20 キヤノン株式会社 放射線検出装置及び放射線検出システム
JP4685027B2 (ja) * 2004-10-28 2011-05-18 シャープ株式会社 二次元画像検出装置およびその製造方法
JP2007155662A (ja) 2005-12-08 2007-06-21 Canon Inc 放射線検出装置及びそれを用いた放射線撮像システム
JP4921180B2 (ja) 2006-01-25 2012-04-25 キヤノン株式会社 放射線検出装置及び放射線撮像システム
JP5089195B2 (ja) 2006-03-02 2012-12-05 キヤノン株式会社 放射線検出装置、シンチレータパネル、放射線検出システム及び放射線検出装置の製造方法
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JP4834614B2 (ja) 2007-06-12 2011-12-14 キヤノン株式会社 放射線検出装置および放射線撮像システム
JP2010014581A (ja) * 2008-07-04 2010-01-21 Fujifilm Corp 放射線像変換パネルの製造方法
WO2011125383A1 (ja) * 2010-04-07 2011-10-13 コニカミノルタエムジー株式会社 フラットパネルディテクタの製造方法
JP5607426B2 (ja) 2010-05-28 2014-10-15 キヤノン株式会社 放射線検出装置及び放射線撮像システム
JP5562134B2 (ja) 2010-06-17 2014-07-30 キヤノン株式会社 放射線検出装置、その製造方法及び放射線撮像システム
JP5473835B2 (ja) * 2010-08-31 2014-04-16 富士フイルム株式会社 放射線検出器、放射線画像撮影装置及び放射線検出器の製造方法
JP2013029384A (ja) 2011-07-27 2013-02-07 Canon Inc 放射線検出装置、その製造方法および放射線検出システム

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5179284A (en) * 1991-08-21 1993-01-12 General Electric Company Solid state radiation imager having a reflective and protective coating
US6608312B1 (en) * 1999-09-03 2003-08-19 Canon Kabushiki Kaisha Information reading apparatus, method of producing same, and radiation imaging system having same
US7265371B2 (en) * 2004-06-10 2007-09-04 Konica Minolta Medical & Graphic, Inc. Radiation image conversion panel
US20080116381A1 (en) * 2006-11-22 2008-05-22 Masashi Kondo Scintillator panel, method of manufacturing the same and radiation imaging apparatus

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105989906A (zh) * 2015-03-18 2016-10-05 佳能株式会社 放射线检测装置、放射线成像系统和制造方法
CN105989906B (zh) * 2015-03-18 2017-12-22 佳能株式会社 放射线检测装置、放射线成像系统和制造方法
US9971043B2 (en) 2015-03-18 2018-05-15 Canon Kabushiki Kaisha Radiation detection apparatus, radiation imaging system, and manufacturing method
CN116722023B (zh) * 2023-08-10 2023-12-01 奕瑞影像科技（太仓）有限公司 一种适用于dr平板探测器的tft核心组件及其制备方法

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US9054012B2 (en) 2015-06-09
JP2014013193A (ja) 2014-01-23
US20140008749A1 (en) 2014-01-09
JP6071283B2 (ja) 2017-02-01

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Effective date of abandoning: 20170111