CN103518006A - 耐腐蚀的电导体 - Google Patents
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Abstract
一种电导体(100),具有金属基板(102)。密封镀层(104)设置在金属基板上和外部。镍镀层(106)设置在密封镀层上和外部。金镀层(108)设置在镍镀层上和外部。密封镀层是不基于镍的金属。任选地,密封镀层可以是基于锡的。任选地,密封镀层可产生与镍镀层和金属基板的金属间化合界面(112,114)。任选地,电导体可构成配置用于与印刷电路板或者另一配合触头的至少一个配合的触头。
Description
技术领域
在此的主题总体上涉及耐腐蚀的电导体。
背景技术
电导体用于传输信号和/或电力。电导体的典型实例是用作电连接器的一部分的触头,该触头可以电连接到导线、印刷电路板上的电迹线或者另一电连接器的另一触头。电导体的其它的例子是印刷电路板上的传导迹线。电导体典型地包括金属基板,例如铜或者铜合金基板。为了改善金属基板的属性或者特性,例如降低腐蚀或者提供更硬的表面以用于连接到另一电气部件,金属基板典型地被镀,例如镀上镍镀层或者金镀层。镍镀层用作金镀层和铜基板之间的缓冲部。
但是,传统的镀镍金的导体并不是没有缺点的。例如,镍金镀层会不足以耐腐蚀。例如,会存在以下问题:由于在金镀层和/或镍镀层中存在小的孔,因此通过镍金镀层会发生坑点腐蚀。使得镍镀层和/或金镀层变厚的对策已经被考虑,但是,这样的对策增大了镀成本。
对耐腐蚀的电导体存在需求。
发明内容
本发明的电导体具有金属基板。在金属基板上以及金属基板外部提供密封镀层。镍镀层被提供在密封镀层上以及外部。金镀层被提供在镍镀层上以及外部。密封镀层是不基于镍的金属。任选地,密封镀层可以是基于锡的。任选地,密封镀层可形成与镍镀层和金属基板的金属间化合的界面。任选地,电导体可构成配置用于与印刷电路板或者另一配合触头的至少一个配合的触头。
附图说明
现在将通过例子参照附图描述本发明,其中:
图1是根据一示例性实施例形成的电导体的一部分的横截面视图;
图2是示出耐点蚀的电导体的一部分的横截面视图;
图3示出根据一示例性实施例的电导体的制造方法。
具体实施方式
图1是根据一示例性实施例的电导体100的一部分的横截面视图。图2是示出耐点蚀的电导体100的一部分的横截面视图。
电导体100适于用作触头或者端子,例如用于电连接器中的那些。电导体100可以端接到导线末端,或者可以配置用于安装到印刷电路板。在一替代实施例中,电导体100可以是印刷电路板上的传导迹线。电导体100展现出高的耐腐蚀性。
电导体100包括金属基板102,例如铜基板,铜合金基板,钢基板等等。金属基板102形成用于金属导体100的基底金属。密封镀层104设置在金属基板102上。镍镀层106设置在密封镀层104和金属基板102上。镍镀层106可包括镍合金(例如Ni-S、Ni-P、Ni-W等等)。金镀层108设置在镍镀层106、密封镀层104和金属基板102上。金镀层108可以是软黄金(例如足金)或者硬黄金例如金合金(例如。Co-Au、Ni-Au,等等)。在替代实施例中,可以在任何镀层104,106,108之间、之上或者之下使用其它的层。镀层104,106,108改善电导体100的属性或者特性。例如,镀层104,106,108可提供耐腐蚀性。镀层104,106,108可提供除了耐腐蚀性之外的其它特性的改进。
在一示例性实施例中,密封镀层104是基于锡的。密封镀层104可以是锡合金,例如锡镍材料。在替代实施例中,密封镀层104可以是其它金属或者金属合金,例如银、银合金或者金。在一示例性实施例中,密封镀层104是不基于镍的金属。密封镀层104可以是不基于VIII族的金属。密封镀层104可以是非过渡金属。密封镀层104可以是贵重。密封镀层104可以由能够且易于与金属基板102和/或镍镀层106形成金属间化合结构的金属或者金属合金形成。
金属基板102包括外表面110。在一示例性实施例中,密封镀层104直接设置在金属基板102的外表面110上。“直接”设置……上是指一个层接合另一层,在二者之间没有其它层。密封镀层104设置在金属基板102的外部。密封镀层104通过在金属基板102上的镀工艺形成。例如,密封镀层104可以通过电镀、化学镀或者浸镀形成。在替代实施例中,密封镀层104可以通过其它方式或者工艺沉积。在一示例性实施例中,基于锡的密封镀层104是镀在金属基板102上的光锡(bright tin)。光锡镀层的小的微粒可以促进密封镀层104和金属基板102和/或镍镀层106之间的相互扩散。或者,基于锡的密封镀层104可以是半光锡镀层,或者亚光锡(matte tin)镀层。在其它替代实施例中,密封镀层104可以是镀在金属基板102上的亮锡(flash tin)。
基于锡的密封镀层104可与可以为铜的金属基板102起反应,以与铜锡(CuSn)金属间化合物(例如,Cu6Sn5,Cu3Sn等等)通过固态扩散和/或热处理或者回流工艺形成金属间化合物。金属间化合中间层112限定在密封镀层104和金属基板102之间的界面上。金属间化合中间层112比密封镀层104或者金属基板102都要硬。金属间化合中间层112可以是连续的和无孔的。金属间化合中间层112具有与金属基板102相比相对高的贵重性。金属间化合中间层112是耐腐蚀的。金属间化合中间层112密封金属基板102和密封镀层104之间的界面。任选地,金属间化合层的形成可以通过提高电导体100的温度而强力形成或者加速。因为一些或者全部的密封镀层104经历金属间化合层形成,在金属间化合层形成之后,金属间化合中间层112可以比密封镀层104更厚。
在一示例性实施例中,镍镀层106直接设置在密封镀层104上。镍镀层106是密封镀层104的外部。镍镀层106由镀镍工艺例如电镀形成。在替代实施例中,镍镀层106可以通过其它方式或者工艺沉积在密封镀层104上。
基于锡的密封镀层104与镍镀层106通过固态扩散和/或热处理或者回流工艺起反应以形成镍锡(NiSn)金属间化合物(例如Ni3Sn、NiSn3,等等)层。金属间化合中间层114限定在密封镀层104和镍镀层106之间的界面上。金属间化合中间层114比密封镀层104或者镍镀层106都硬。金属间化合中间层114可以是连续且无孔的。与镍镀层106相比,金属间化合中间层114具有相对高的贵重性。金属间化合中间层114是耐腐蚀的。金属间化合中间层114密封镍镀层106和密封镀层104之间的界面。任选地,金属间化合层形成通过提高电导体100的温度而强力形成或者加速。因为一些或者全部的密封镀层104经历金属间化合层形成,在金属间化合层形成后,金属间化合中间层可以比密封镀层104更厚。任选地,在金属间化合形成后,密封镀层104可以大致或者完全转变为金属间化合中间层112和/或114。
在一示例性实施例中,金镀层108直接设置在镍镀层106上。金镀层108是镍镀层106的外部。金镀层108包括限定电导体100的外部或者外表面的外表面116。金镀层108通过在镍镀层106上镀而形成。在一示例性实施例中,金镀层108被电镀。在替代实施例中,金镀层108可以通过其它方式或者工艺沉积在镍镀层106上。
金镀层108包括针孔120,由于金镀层108的相对较薄,因此在金镀层108中不可避免地存在前述针孔120。如图2所示,镍镀层106的点蚀从金镀层108的针孔120开始。镍镀层106还可包括形成在那里的针孔122。镍镀层106的点蚀可以从针孔120延伸到针孔122。在一示例性实施例中,密封镀层104提供金属基板102与镍和金镀层106,108之间的缓冲。密封镀层104防止金属基板102腐蚀。
在一示例性实施例中,密封镀104是没有针孔的,不同于镍和金镀层106,108,其并不包括针孔。密封镀层104具有比镍镀层106更低的多孔性,从而减少和/或消除金属基板102的点蚀。
在一示例性实施例中,密封镀层104比镍镀层106更贵。密封镀层104比镍镀层106更不易腐蚀。在密封镀层104的内和外表面上的金属间化合形成物使得密封镀层104变硬和/或提高在金属间化合中间层112,114上的密封镀层104的贵重性。金属间化合中间层112,114具有高的耐腐蚀性,从而从电导体100外部环境有效密封金属基板102。
镀层104,106,108的厚度可以被选择以平衡耐腐蚀性的效果和提供更厚层导致的成本升高。在一示例性实施例中,金镀层108具有大约15μ英寸的厚度。镍镀层106具有大约50μ英寸的厚度。密封镀层104具有大约10μ英寸的厚度。在替代实施例中,其它厚度的镀层104,106,108也是可以的。例如,金镀层108可以是例如大约5-10μ英寸的闪熔镀层,由于来自于使用密封镀层104导致的降低的腐蚀效果。
在一示例性实施例中,镍镀层106基本比金镀层108和密封镀层104更厚。任选地,密封镀层104可以比镍金镀层106,108的总厚度的25%更薄。任选地,密封镀层104可以比镍金镀层106,108的总厚度的10%更薄。在其它的替代实施例中,密封镀层104可以大致等于镍镀层106的厚度,在其它的替代实施例中密封镀层104可以比镍镀层106更厚。
在一示例性实施例中,密封镀层104具有一厚度,该厚度被选择为以使得密封镀层104的基本全部或者全部的金属变为金属间化合中间层112,114。任选地,相较于与金属基板102发生转变或者反应而言,更多的密封镀层104金属可以与镍镀层106发生转变或者反应。密封镀层104的厚度可以基于金属基板102、镍镀层106和密封镀层104的金属化合物进行选择。取决于用于金属基板102、镍镀层106和密封镀层104中的金属,在金属间化合界面112,114上的金属间化合转变的量可以变化。取决于金属化合物,发生转变的密封镀层104的金属的量可以不同。
在一示例性实施例中,金属间化合形成工艺导致密封镀层104的体积增大,从而密封任何的针孔在密封镀层104中和/或在镍镀层106或者金属基板102中。任选地,电导体100可以被热处理,或者经受温度升高,从而降低密封镀层104和金属基板102和/或镍镀层106之间的金属间化合形成物的生长速度。
图3示出根据一示例性实施例的电导体的制造方法方法。所述方法包括提供130金属基板。所述方法包括沉积132密封镀层在金属基板上。所述方法包括沉积134镍镀层在密封镀层上。
所述方法包括促进136密封镀层和金属基板之间的金属间化合形成。金属间化合形成源于与密封镀层和金属基板固态相互扩散和反应。金属间化合的形成可以基于金属基板和密封镀层的金属被促进。金属间化合的形成可以通过提高制造工艺过程中或者之后电导体的温度而被促进以增大金属间化合形成物的量和/或密封镀层和金属基板之间的金属间化合中间层的厚度。
所述方法包括促进密封镀层和镍镀层之间的金属间化合的形成。金属间化合形成源于与密封镀层和镍镀层的固态相互扩散和反应。金属间化合的形成可以基于镍镀层和密封镀层的金属被促进。金属间化合的形成可以通过提高在制造工艺过程中或者之后电导体温度而被促进以增大金属间化合形成物的量和/或密封镀层和镍镀层之间的金属间化合中间层的厚度。
所述方法包括在镍镀层上沉积140金镀层。在示例性实施例中,在金属间化合形成后沉积金镀层以消除通过金镀层发生镍扩散的可能性,如果在促进密封镀层和镍镀层之间的金属间化合形成之前沉积金镀层则会发生前述镍扩散。在替代实施例中,金镀层可以在促进金属间化合形成之前被沉积。在图3中列出的步骤之前、之中或者之后可以执行其它步骤。
Claims (10)
1.一种电导体(100),包括:
金属基板(102);
设置在所述金属基板上和外部的密封镀层(104);
设置在所述密封镀层上和外部的镍镀层(106);以及
设置在所述镍镀层上和外部的金镀层(108);
其中所述密封镀层是不基于镍的金属。
2.如权利要求1所述的电导体(100),其中,所述密封镀层(104)是基于锡的。
3.如权利要求1所述的电导体(100),其中,所述密封镀层(104)具有比所述镍镀层(106)更低的多孔性。
4.如权利要求1所述的电导体(100),其中,所述密封镀层(104)与所述镍镀层(106)和所述金属基板(102)产生金属间化合界面(112,114)
5.如权利要求1所述的电导体(100),其中,所述密封镀层(104)是没有针孔的。
6.如权利要求1所述的电导体(100),其中,所述密封镀层(104)比所述镍镀层(106)贵重。
7.如权利要求1所述的电导体(100),其中,所述密封镀层(104)具有基于所述金属基板(102)、所述镍镀层(106)和所述密封镀层的金属化合物选择的厚度以使得密封镀层的大致全部的或者全部的金属转变为在所述密封镀层和所述金属基板之间的以及在所述密封镀层和所述镍镀层之间的金属间化合界面(112,114)。
8.如权利要求1所述的电导体(100),其中,所述密封镀层(104)具有比所述镍镀层(106)和所述金镀层(108)的总厚度的25%更薄的厚度。
9.如权利要求1所述的电导体(100),其中,所述密封镀层(104)具有比所述镍镀层(106)和所述金镀层(108)的总厚度的10%更薄的厚度。
10.如权利要求1所述的电导体(100),其中,所述电导体包括配置用于与印刷电路板或者另一配合触头的至少一个配合的触头,所述触头包括所述金属基板(102)、所述密封镀层(104)、所述镍镀层(106)和所述金镀层(108)。
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US13/103,552 US8574722B2 (en) | 2011-05-09 | 2011-05-09 | Corrosion resistant electrical conductor |
US13/103,552 | 2011-05-09 | ||
PCT/US2012/033886 WO2012154374A1 (en) | 2011-05-09 | 2012-04-17 | Corrosion resistant electrical conductor |
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EP (1) | EP2707522A1 (zh) |
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JP2015110829A (ja) * | 2013-10-30 | 2015-06-18 | 三菱マテリアル株式会社 | 錫めっき銅合金端子材 |
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US20140023880A1 (en) | 2014-01-23 |
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BR112013028717A2 (pt) | 2017-01-24 |
EP2707522A1 (en) | 2014-03-19 |
US8574722B2 (en) | 2013-11-05 |
US20120285720A1 (en) | 2012-11-15 |
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