CN103449463B - 一种硼化锆-碳化硅复合粉体及其制备方法 - Google Patents
一种硼化锆-碳化硅复合粉体及其制备方法 Download PDFInfo
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CN104193339B (zh) * | 2014-08-29 | 2016-06-08 | 武汉科技大学 | 一种硼化锆-碳化硅超细复合粉体及其制备方法 |
CN108585889B (zh) * | 2018-04-28 | 2021-04-16 | 武汉科技大学 | 一种棒状硼化锆-片状碳化硅单晶复合粉体及其制备方法 |
CN115893990B (zh) * | 2022-11-28 | 2023-09-08 | 安徽工业大学 | 一种低碳镁碳砖 |
Citations (6)
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US5227195A (en) * | 1989-04-04 | 1993-07-13 | Sri International | Low temperature method of forming materials using one or more metal reactants and a halogen-containing reactant to form one or more reactive intermediates |
CN102320850A (zh) * | 2011-09-02 | 2012-01-18 | 郑州大学 | 一种ZrB2-SiC复合粉体及制备方法 |
CN102320837A (zh) * | 2011-06-21 | 2012-01-18 | 武汉理工大学 | 一种ZrB2-YB4复合粉体的制备方法 |
CN102826851A (zh) * | 2012-08-31 | 2012-12-19 | 中国地质大学(北京) | 一种硼化锆-碳化硅复相耐高温粉体材料的制备方法 |
CN103073304A (zh) * | 2013-01-16 | 2013-05-01 | 郑州大学 | 一种ZrB2-SiC复合粉体的电熔法制备工艺 |
CN103073320A (zh) * | 2013-01-16 | 2013-05-01 | 郑州大学 | 一种ZrB2-SiC(w)陶瓷原料的制备方法 |
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Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
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US5227195A (en) * | 1989-04-04 | 1993-07-13 | Sri International | Low temperature method of forming materials using one or more metal reactants and a halogen-containing reactant to form one or more reactive intermediates |
CN102320837A (zh) * | 2011-06-21 | 2012-01-18 | 武汉理工大学 | 一种ZrB2-YB4复合粉体的制备方法 |
CN102320850A (zh) * | 2011-09-02 | 2012-01-18 | 郑州大学 | 一种ZrB2-SiC复合粉体及制备方法 |
CN102826851A (zh) * | 2012-08-31 | 2012-12-19 | 中国地质大学(北京) | 一种硼化锆-碳化硅复相耐高温粉体材料的制备方法 |
CN103073304A (zh) * | 2013-01-16 | 2013-05-01 | 郑州大学 | 一种ZrB2-SiC复合粉体的电熔法制备工艺 |
CN103073320A (zh) * | 2013-01-16 | 2013-05-01 | 郑州大学 | 一种ZrB2-SiC(w)陶瓷原料的制备方法 |
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Effective date of registration: 20201126 Address after: Unit 2414-2416, main building, no.371, Wushan Road, Tianhe District, Guangzhou City, Guangdong Province Patentee after: GUANGDONG GAOHANG INTELLECTUAL PROPERTY OPERATION Co.,Ltd. Address before: 430081 construction of Qingshan District, Hubei, Wuhan Patentee before: WUHAN University OF SCIENCE AND TECHNOLOGY |
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Effective date of registration: 20201127 Address after: Building 2, No. 3, Fuqian Road, Hailing District, Taizhou City, Jiangsu Province Patentee after: Taizhou Haitong Asset Management Co.,Ltd. Address before: Unit 2414-2416, main building, no.371, Wushan Road, Tianhe District, Guangzhou City, Guangdong Province Patentee before: GUANGDONG GAOHANG INTELLECTUAL PROPERTY OPERATION Co.,Ltd. Effective date of registration: 20201127 Address after: Unit 2414-2416, main building, no.371, Wushan Road, Tianhe District, Guangzhou City, Guangdong Province Patentee after: GUANGDONG GAOHANG INTELLECTUAL PROPERTY OPERATION Co.,Ltd. Address before: 430081 construction of Qingshan District, Hubei, Wuhan Patentee before: WUHAN University OF SCIENCE AND TECHNOLOGY |