CN103441124B - 电压调节器的叠层封装方法及相应的叠层封装装置 - Google Patents
电压调节器的叠层封装方法及相应的叠层封装装置 Download PDFInfo
- Publication number
- CN103441124B CN103441124B CN201310378482.XA CN201310378482A CN103441124B CN 103441124 B CN103441124 B CN 103441124B CN 201310378482 A CN201310378482 A CN 201310378482A CN 103441124 B CN103441124 B CN 103441124B
- Authority
- CN
- China
- Prior art keywords
- chip
- lead frame
- pin
- conductive layer
- projection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims abstract description 35
- 238000003475 lamination Methods 0.000 title claims abstract description 24
- 238000004806 packaging method and process Methods 0.000 claims abstract description 26
- 230000005611 electricity Effects 0.000 claims abstract description 8
- 238000004519 manufacturing process Methods 0.000 claims abstract description 4
- 238000002955 isolation Methods 0.000 claims description 13
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 10
- 229910052802 copper Inorganic materials 0.000 claims description 10
- 239000010949 copper Substances 0.000 claims description 10
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 238000005538 encapsulation Methods 0.000 description 7
- 101100102627 Oscarella pearsei VIN1 gene Proteins 0.000 description 5
- 230000010354 integration Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49537—Plurality of lead frames mounted in one device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49562—Geometry of the lead-frame for devices being provided for in H01L29/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49575—Assemblies of semiconductor devices on lead frames
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16245—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49128—Assembling formed circuit to base
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Integrated Circuits (AREA)
- Wire Bonding (AREA)
- Lead Frames For Integrated Circuits (AREA)
- Dc-Dc Converters (AREA)
- Manufacturing & Machinery (AREA)
Abstract
Description
Claims (15)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310378482.XA CN103441124B (zh) | 2013-08-27 | 2013-08-27 | 电压调节器的叠层封装方法及相应的叠层封装装置 |
TW103113219A TWI534983B (zh) | 2013-08-27 | 2014-04-10 | Voltage regulator stack packaging method and the corresponding laminated packaging device |
US14/469,742 US9379088B2 (en) | 2013-08-27 | 2014-08-27 | Stacked package of voltage regulator and method for fabricating the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310378482.XA CN103441124B (zh) | 2013-08-27 | 2013-08-27 | 电压调节器的叠层封装方法及相应的叠层封装装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103441124A CN103441124A (zh) | 2013-12-11 |
CN103441124B true CN103441124B (zh) | 2016-01-06 |
Family
ID=49694811
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201310378482.XA Active CN103441124B (zh) | 2013-08-27 | 2013-08-27 | 电压调节器的叠层封装方法及相应的叠层封装装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US9379088B2 (zh) |
CN (1) | CN103441124B (zh) |
TW (1) | TWI534983B (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104701272B (zh) * | 2015-03-23 | 2017-08-25 | 矽力杰半导体技术(杭州)有限公司 | 一种芯片封装组件及其制造方法 |
CN110993579A (zh) * | 2019-11-25 | 2020-04-10 | 南京矽力杰半导体技术有限公司 | 电源模块的封装结构 |
CN115052420B (zh) * | 2022-06-17 | 2024-01-19 | 河南驰诚电气股份有限公司 | 一种电子电路层叠设计的电路板及其设计方法 |
CN117673003A (zh) * | 2022-08-24 | 2024-03-08 | 达尔科技股份有限公司 | 电子组件封装件及其制造方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1866515A (zh) * | 2005-05-20 | 2006-11-22 | 恩益禧电子股份有限公司 | 包含顺序堆叠的模拟半导体芯片和数字半导体芯片的sip型封装及其制造方法 |
CN101290930A (zh) * | 2007-04-19 | 2008-10-22 | 英飞凌科技股份公司 | 包含半导体芯片叠层的半导体器件及其制造方法 |
CN102646670A (zh) * | 2011-05-02 | 2012-08-22 | 成都芯源系统有限公司 | 半导体器件及其制作方法 |
US8466561B2 (en) * | 2006-07-24 | 2013-06-18 | Infineon Technologies Ag | Semiconductor module with a power semiconductor chip and a passive component and method for producing the same |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SG150395A1 (en) * | 2007-08-16 | 2009-03-30 | Micron Technology Inc | Stacked microelectronic devices and methods for manufacturing stacked microelectronic devices |
TWI355068B (en) * | 2008-02-18 | 2011-12-21 | Cyntec Co Ltd | Electronic package structure |
US7977802B2 (en) * | 2009-03-05 | 2011-07-12 | Stats Chippac Ltd. | Integrated circuit packaging system with stacked die and method of manufacture thereof |
US8115260B2 (en) * | 2010-01-06 | 2012-02-14 | Fairchild Semiconductor Corporation | Wafer level stack die package |
CN101814480B (zh) | 2010-04-16 | 2011-08-31 | 杭州矽力杰半导体技术有限公司 | 一种芯片封装结构及其封装方法 |
US9524957B2 (en) * | 2011-08-17 | 2016-12-20 | Intersil Americas LLC | Back-to-back stacked dies |
CN102832189B (zh) | 2012-09-11 | 2014-07-16 | 矽力杰半导体技术(杭州)有限公司 | 一种多芯片封装结构及其封装方法 |
-
2013
- 2013-08-27 CN CN201310378482.XA patent/CN103441124B/zh active Active
-
2014
- 2014-04-10 TW TW103113219A patent/TWI534983B/zh active
- 2014-08-27 US US14/469,742 patent/US9379088B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1866515A (zh) * | 2005-05-20 | 2006-11-22 | 恩益禧电子股份有限公司 | 包含顺序堆叠的模拟半导体芯片和数字半导体芯片的sip型封装及其制造方法 |
US8466561B2 (en) * | 2006-07-24 | 2013-06-18 | Infineon Technologies Ag | Semiconductor module with a power semiconductor chip and a passive component and method for producing the same |
CN101290930A (zh) * | 2007-04-19 | 2008-10-22 | 英飞凌科技股份公司 | 包含半导体芯片叠层的半导体器件及其制造方法 |
CN102646670A (zh) * | 2011-05-02 | 2012-08-22 | 成都芯源系统有限公司 | 半导体器件及其制作方法 |
Also Published As
Publication number | Publication date |
---|---|
TWI534983B (zh) | 2016-05-21 |
US9379088B2 (en) | 2016-06-28 |
TW201511215A (zh) | 2015-03-16 |
US20150062836A1 (en) | 2015-03-05 |
CN103441124A (zh) | 2013-12-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN102760724B (zh) | 一种联合封装的功率半导体器件 | |
CN102376669B (zh) | 半导体器件 | |
CN203882995U (zh) | 半导体组件 | |
KR20200047325A (ko) | 반도체 디바이스 및 이의 제조 방법 | |
US8933550B2 (en) | Structure of mixed semiconductor encapsulation structure with multiple chips and capacitors | |
CN202042483U (zh) | 一种功率半导体器件的封装结构 | |
CN103000603B (zh) | 晶体管结构及其封装方法 | |
CN103441124B (zh) | 电压调节器的叠层封装方法及相应的叠层封装装置 | |
CN103035631A (zh) | 联合封装高端和低端芯片的半导体器件及其制造方法 | |
CN102468292B (zh) | 一种用于直流-直流转换器的封装体结构 | |
CN104637894A (zh) | 具有堆叠电容的金属氧化物半导体场效应晶体管对及方法 | |
CN104681525A (zh) | 一种多芯片叠层的封装结构及其封装方法 | |
CN102169873B (zh) | 一种应用于功率切换器电路的半导体封装结构 | |
CN104425429A (zh) | 具有多层裸片组块的半导体封装 | |
CN114823655B (zh) | GaN HEMT器件的共源共栅封装结构及方法 | |
CN106298737A (zh) | 功率模块封装结构及其制造方法 | |
CN103762214A (zh) | 应用于开关型调节器的集成电路组件 | |
CN210956668U (zh) | 一种功率半导体模块的桥臂单元 | |
CN114520214A (zh) | 一种共源共栅晶体管封装结构 | |
CN115881712A (zh) | Mcm封装结构及其制作方法 | |
CN102843862A (zh) | 一种igbt模块的电路板结构及封装结构 | |
CN207068837U (zh) | 共用电极半导体封装结构 | |
CN107768319B (zh) | 一种无电气连接芯片的封装结构及方法 | |
CN104332465A (zh) | 一种3d封装结构及其工艺方法 | |
CN202183370U (zh) | 非互联型多芯片封装二极管 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20160118 Address after: 230000, Hefei province high tech Zone, 2800 innovation Avenue, 201 innovation industry park, H2 building, room two, Anhui Patentee after: Hefei Silicon Microelectronics Technology Co.,Ltd. Address before: 310012 Wensanlu Road science and technology building, Hangzhou, Zhejiang, No. 90 A1501 Patentee before: SILERGY SEMICONDUCTOR TECHNOLOGY (HANGZHOU) Co.,Ltd. |
|
EE01 | Entry into force of recordation of patent licensing contract | ||
EE01 | Entry into force of recordation of patent licensing contract |
Application publication date: 20131211 Assignee: Anhui Xingtai Financial Leasing Co.,Ltd. Assignor: Hefei Silicon Microelectronics Technology Co.,Ltd. Contract record no.: X2022340000003 Denomination of invention: Laminated packaging method of voltage regulator and corresponding laminated packaging device Granted publication date: 20160106 License type: Exclusive License Record date: 20220418 |
|
PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: Laminated packaging method of voltage regulator and corresponding laminated packaging device Effective date of registration: 20220422 Granted publication date: 20160106 Pledgee: Anhui Xingtai Financial Leasing Co.,Ltd. Pledgor: Hefei Silicon Microelectronics Technology Co.,Ltd. Registration number: Y2022980004560 |
|
PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20230727 Granted publication date: 20160106 Pledgee: Anhui Xingtai Financial Leasing Co.,Ltd. Pledgor: Hefei Silicon Microelectronics Technology Co.,Ltd. Registration number: Y2022980004560 |
|
EC01 | Cancellation of recordation of patent licensing contract | ||
EC01 | Cancellation of recordation of patent licensing contract |
Assignee: Anhui Xingtai Financial Leasing Co.,Ltd. Assignor: Hefei Silicon Microelectronics Technology Co.,Ltd. Contract record no.: X2022340000003 Date of cancellation: 20230810 |