CN103441072A - 用于硅化物阻挡氧化物层的刻蚀方法 - Google Patents
用于硅化物阻挡氧化物层的刻蚀方法 Download PDFInfo
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CN106024622A (zh) * | 2016-07-27 | 2016-10-12 | 上海华虹宏力半导体制造有限公司 | 自对准硅化物阻挡层的制造方法 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN106024622A (zh) * | 2016-07-27 | 2016-10-12 | 上海华虹宏力半导体制造有限公司 | 自对准硅化物阻挡层的制造方法 |
CN106024622B (zh) * | 2016-07-27 | 2019-04-19 | 上海华虹宏力半导体制造有限公司 | 自对准硅化物阻挡层的制造方法 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HONGLI SEMICONDUCTOR MANUFACTURE CO LTD, SHANGHAI Effective date: 20140509 |
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Effective date of registration: 20140509 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201203 Shanghai Guo Shou Jing Road, Pudong New Area Zhangjiang hi tech Park No. 818 Applicant before: Hongli Semiconductor Manufacture Co., Ltd., Shanghai |
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Application publication date: 20131211 |
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