CN103426861B - 功率半导体的可靠区域接合件 - Google Patents

功率半导体的可靠区域接合件 Download PDF

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Publication number
CN103426861B
CN103426861B CN201310178772.XA CN201310178772A CN103426861B CN 103426861 B CN103426861 B CN 103426861B CN 201310178772 A CN201310178772 A CN 201310178772A CN 103426861 B CN103426861 B CN 103426861B
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copper
tube core
metallization
contact area
substrate
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CN103426861A (zh
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R.巴耶雷尔
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Infineon Technologies AG
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Infineon Technologies AG
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Abstract

本发明涉及功率半导体的可靠区域接合件。功率半导体模块包括：电绝缘衬底；铜金属化，所述铜金属化被布置在衬底的第一侧上并被构图到管芯附着区和多个接触区中；以及半导体管芯，所述半导体管芯附着至所述管芯附着区。管芯包括：有源器件区；以及一个或多个铜管芯金属化层，所述一个或多个铜管芯金属化层被布置在有源器件区之上。有源器件区被布置为比所述一个或多个铜管芯金属化层更接近于铜金属化。与有源器件区间隔最远的铜管芯金属化层具有在管芯的面向远离衬底的一侧的大部分之上延伸的接触区域。模块进一步包括铜互连金属化，所述铜互连金属化经由无铝区域接合件连接至管芯的接触区域，并且连接至铜金属化的接触区中的第一接触区。

Description

功率半导体的可靠区域接合件
技术领域
本申请涉及一种功率半导体，并且更特别地涉及一种功率半导体的可靠区域接合件（areajoint）。
背景技术
常规地，功率半导体管芯通过焊接的、扩散焊接的或烧结的区域接合件在管芯的背面处附着至衬底的金属化侧。一般通过粗（heavy）Al线结合（bonding）或粗Cu线结合来进行到管芯的面向远离衬底的正面的电连接。例如，已经在双面冷却组件中并根据较老的晶闸管和整流器模块设计，使用了双面区域接合件，其中，通过焊接将金属夹子接合至正面。还在一些分立的低电压功率MOSFET（金属氧化物半导体场效应晶体管）封装中使用夹子焊接方法（clipsolderingmethod）。在所谓的平面互连技术中，结构具有载体/衬底上的绝缘层和绝缘层顶部上的导体图案。在其它双面区域接合件方法中，使用柔性板而不是线结合连接来提供与管芯正面的区域接触。
在所有情况下，常规的区域接触都遭受了接合到管芯和半导体材料的金属的热膨胀失配。该失配导致接合伙伴（jointpartner）中和界面材料中的热机械应力。在任何情况下，区域接合件的边缘和角落的端部处的高应力导致脱层。在焊接的区域接触的情况下，应力在功率循环或热循环期间使焊接层开裂。裂纹从边缘扩展至焊料内的中心。在一些平面互连技术中，直接在为Al、AlSi或AlCu或AlCuSi的管芯金属化（metallization）上生长铜。经常在要生长的铜层下面涂覆界面金属层。界面层相当薄并处于几百nm的范围内。脱层的易破层（weaklayer）是Al或Al合金管芯金属化。裂纹起始于Al表面处的边缘和角落处，并向Al管芯金属化层内的中心移动。在到管芯Al管芯金属化的烧结连接的情况下，裂纹起始于烧结层的表面处的边缘和角落处，并向下移动至Al管芯金属化层中，并停留在向中心扩展的Al金属化中。尽管一些常规的平面互连技术已经消除了与管芯的区域接触中的易破的软焊料，但是这些结构的寿命由于标准Al管芯金属化的使用而受该区域接合件限制，所述标准Al管芯金属化是区域接合区中的最易破的点。
发明内容
在这里所述的实施例提供了一种在半导体管芯的最后铜金属化层与铜互连金属化之间的无Al区域接合件，所述无Al区域接合件将管芯的最后铜金属化层电连接至在电绝缘衬底上布置的被构图的铜金属化。如在这里所使用，术语“铜”指的是纯铜或铜合金，即具有作为主要成分的铜的金属合金。铜互连金属化可以是例如另一衬底、平面互连结构、柔性或刚性板、或者形成与管芯的最后铜金属化层的无Al区域接合件的夹子的部分。
根据功率半导体模块的实施例，模块包括：电绝缘衬底；铜金属化，所述铜金属化被布置在衬底的第一侧上并被构图到管芯附着区和多个接触区中；以及半导体管芯，所述半导体管芯附着至铜金属化的管芯附着区。管芯包括：有源器件区；以及一个或多个铜管芯金属化层，所述一个或多个铜管芯金属化层被布置在所述有源器件区之上。有源器件区被布置为比一个或多个铜管芯金属化层更接近于铜金属化。与有源器件区间隔最远的铜管芯金属化层具有在管芯的面向远离衬底的一侧的大部分之上延伸的接触区域。该模块进一步包括铜互连金属化，所述铜互连金属化经由无铝区域接合件连接至管芯的接触区域，并且连接至铜金属化的接触区中的第一接触区。
根据组装功率半导体模块的方法的实施例，该方法包括：提供电绝缘衬底和铜金属化，所述铜金属化被布置在衬底的第一侧上并被构图到管芯附着区和多个接触区中；将半导体管芯附着至铜金属化的管芯附着区，其中该管芯包括有源器件区和在有源器件区之上布置的一个或多个铜管芯金属化层，有源器件区被布置为比一个或多个铜管芯金属化层更接近于铜金属化，与有源器件区间隔最远的铜管芯金属化层具有在管芯的面向远离衬底的一侧的大部分之上延伸的接触区域；以及经由无铝区域接合件将铜互连金属化连接至管芯的接触区域，并且将铜互连金属化连接至铜金属化的接触区中的第一接触区。
在阅读下面的详细的描述时，以及在观察附图时，本领域技术人员将认识到附加特征和优点。
附图说明
图中的部件不必按比例绘制，代之的是强调图示本发明的原理。此外，在图中，同样的参考数字标示对应的部分。在图中：
图1图示了具有在半导体管芯的最后铜金属化层与作为平面互连结构的部分而实施的铜互连金属化之间的无Al区域接合件的功率模块的横截面视图。
图2A至2E图示了在制造该模块的方法的实施例的不同工艺步骤期间的图1的功率模块的横截面视图。
图3图示了根据另一个实施例的具有在半导体管芯的最后铜金属化层与作为平面互连结构的部分而实施的铜互连金属化之间的无Al区域接合件的功率模块的横截面视图。
图4图示了具有在半导体管芯的最后铜金属化层与作为衬底的部分而实施的铜互连金属化之间的无Al区域接合件的功率模块的横截面视图。
图5图示了具有在半导体管芯的最后铜金属化层与作为柔性板的部分而实施的铜互连金属化之间的无Al区域接合件的功率模块的横截面视图。
图6图示了具有在半导体管芯的最后铜金属化层与作为夹子的部分而实施的铜互连金属化之间的无Al区域接合件的功率模块的横截面视图。
具体实施方式
图1图示了包括电绝缘衬底100、铜金属化110和半导体管芯120的功率模块的实施例，所述铜金属化110被布置在衬底100的第一侧102上并被构图到管芯附着区112和多个接触区114中，所述半导体管芯120附着至铜金属化110的管芯附着区112。为了图示的容易，在图1中，单个管芯120在考虑中，然而，功率模块可以包括多于一个管芯120，以形成例如功率电路。衬底100的相对的第二侧104还可以在其上布置铜金属化130，用于附着至例如散热片（未示出）。衬底100可以是具有形成到管芯120的电连接的金属化侧的任何合适衬底或载体。例如，衬底100可以是直接铜结合（DCB）衬底、有源金属钎焊（AMB）衬底、诸如具有金属化侧的电路板之类的板、引线框架等。
在所有情况下，半导体管芯120都包括有源器件区122和在有源器件区122之上布置的一个或多个铜管芯金属化层124。有源器件区122被布置为比一个或多个铜管芯金属化层124更接近于衬底100上的铜金属化110。与有源器件区122间隔最远的铜管芯金属化层124（在这里也被称作最后铜管芯金属化层）具有共同在管芯120的面向远离衬底100的一侧121的大部分之上延伸的一个或多个接触区域126。可以在最后铜管芯金属化层124与管芯120的半导体材料之间提供具有小于3μm（例如，几百nm）的厚度的薄界面金属化140，以实现粘附性和对抗向半导体材料中的Cu扩散的阻挡层。例如，氮化钛（TiN）、氮化钽（TaN）或氮化钛锆（TiZrN）可以作为Cu扩散阻挡层。在一个实施例中，在形成最后铜管芯金属化层124之前，提供任何薄界面金属140。照此，由最后铜管芯金属化层124所提供的接触区域126遍及整个区域接触结构具有Cu的机械强度。可选界面或阻挡层金属140被选择为具有比最后铜管芯金属化层124更高的机械强度，以维持功率模块的优越的接合完整性。
功率模块进一步包括铜互连金属化150，所述铜互连金属化150经由无铝区域接合件连接至管芯120的每个Cu接触区域126，并连接至衬底100上的铜金属化110的每个接触区114。管芯120可以是功率晶体管，诸如功率MOSFET、IGBT（绝缘栅双极晶体管）或JFET（结型场效应晶体管），并因此具有连接至衬底铜金属化110的管芯附着区112的源极。可以使用任何功率半导体材料，例如硅、SiC、GaN等。同样可以使用像GaN技术中的功率HEMT（高电子迁移率晶体管）一样的横向功率器件。这种器件会在顶部具有三个铜互连，即源极、漏极和栅极控制端子。以相同方式连接控制端子。在另一个例子中，可以使管芯120的相对侧121处的最后铜管芯金属化层124构图到功率（漏极）接触区域126和输入（栅极）接触区域126’中，并且其中源极连接至衬底铜金属化110的管芯附着区112。在其它实施例中，管芯120可以是功率二极管，其中阳极（阴极）连接至衬底100上的管芯附着区112，并且最后铜管芯金属化层124形成阴极（阳极）接触区域。
在所有情况下，通过具有铜互连金属化150的各自的区域接合件来进行至被构图到最后铜管芯金属化层124中的每个接触区域126的电连接。在最后铜管芯金属化层124与铜互连金属化150之间不使用结合线。最后铜管芯金属化层124与铜互连金属化150之间的每个区域接合件是无Al的，这意味着区域接合件并不包含Al或Al合金。当使用Cu而不是Al用于管芯金属化124时，从这些区域接合件中排除Al改进了结合件可靠性。Cu比Al更硬，并因此当从区域接合件中排除Al时消除了或至少减少了从区域接合件到管芯金属化124中的裂纹扩展。
在图1中所示的实施例中，铜互连金属化150是平面互连结构的部分，所述平面互连结构还包括被一致地布置在衬底100上的绝缘层160、衬底100上的铜金属化110、以及管芯120的面向远离衬底100的侧121的横向侧123和外周125上。绝缘层160具有在被布置在衬底100上的铜金属化110的每个接触区114之上的开口162，使得铜互连金属化150可以通过绝缘层160中的各自的开口162（在图1，一些开口看不见）被连接至接触区114。铜互连金属化150被形成在绝缘层160上，并与绝缘层160和管芯120的表面形貌一致。
图2A至2E图示了制造图1中所示的功率模块的方法的实施例。将管芯120附着至衬底100的铜金属化110，而在附着之后，最后铜管芯金属化层124面向远离衬底100，如图2A中所示。然后，在衬底100、衬底100上的铜金属化110、以及管芯120的面向远离衬底100的侧121的横向侧123和外周125上形成一致的绝缘层160，如图2B中所示。根据该实施例，绝缘层160与最后铜管芯金属化层124的顶（暴露）侧127重叠不超过5μm。在衬底铜金属化110的每个接触区114之上穿过绝缘层160形成开口162，如图2C中所示（在图2C中，一些开口看不见）。例如，可以将绝缘层160层压在整个结构之上，并且然后在特定区域中打开绝缘层160。然后，在绝缘层160和管芯120的最后铜金属化层124上形成铜互连金属化150，使得铜互连金属化150与绝缘层160和管芯120的表面形貌一致，并通过绝缘层160中的对应开口162来连接至衬底铜金属化110的每个可应用的接触区114。
通过在绝缘层160和最后铜管芯金属化层上形成薄铜生长种子层152来产生铜互连金属化152，如图2D中所示。然后，如图2E中所示，在薄种子层152上电镀地（galvanically）生长更厚的铜层154，以产生铜互连金属化150。在电镀地生长厚铜层154之前，可以涂覆并结构化光刻层（未示出），以根据电路结构来生长厚铜154。在生长了厚铜154之后，移除光刻层，并通过整个铜层的短蚀刻来在槽中蚀刻掉种子层152。根据该实施例，将铜互连金属化150连接至管芯120的Cu接触区域126的面向远离衬底100的整个侧，因为绝缘层160并不与最后铜管芯金属化层124的顶（暴露）侧127的任何部分重叠。照此，管芯120的Cu接触区域126可以非常薄，例如1μm或更薄。
图3图示了与图1中所示的实施例类似的功率模块的另一个实施例，然而，平面互连结构的绝缘层160被布置在管芯120的接触区域126的横向侧131和至少10μm外周131上。这样，铜互连金属化150连接至管芯120的Cu接触区域126的面向远离衬底100的除了在接触区域126的外周133中以外的整个侧127。根据该实施例，最后铜管芯金属化层124具有为至少10μm的厚度。
一般地，当铜互连金属化150是如图1-3中所图示的平面互连结构的部分时，最后铜管芯金属化层124的厚度可以分布在从1μm或更小到50μm的范围内，并且铜互连金属化150的厚度可以分布在从20μm到300μm的范围内。
图4图示了包括电绝缘衬底100、铜金属化110和半导体管芯120的功率模块的另一个实施例，所述铜金属化110被布置在衬底100的第一侧102上并被构图到管芯附着区112和多个接触区114中，所述半导体管芯120附着至衬底铜金属化110的管芯附着区112。还可以使衬底100的相对第二侧104金属化130，用于附着至例如散热片。衬底100可以是具有形成至管芯的电连接的金属化侧的任何合适的衬底或载体。例如，衬底100可以是DCB衬底、AMB衬底、诸如具有金属化侧的电路板之类的板、引线框架等，如在这里之前所述。半导体管芯120包括有源器件区122和被布置在有源器件区122之上的一个或多个铜管芯金属化层124，同样如在这里之前所述。
该功率模块进一步包括铜互连金属化200，所述铜互连金属化200经由无铝区域接合件连接至最后铜管芯金属化层124的每个接触区域126，并连接至衬底铜金属化110的每个对应接触区114。通过与铜互连金属化200的各自的区域接合件来进行至被构图到最后铜管芯金属化层124中的每个接触区域126的电连接。在最后铜管芯金属化层124与铜互连金属化200之间不使用结合线。最后铜管芯金属化层124与铜互连金属化200之间的区域接合件是无Al的，如在这里之前所述。根据该实施例，铜互连金属化200被布置在另一个衬底210的面向管芯120的侧212上。该另一个衬底210可以是DCB衬底、AMB衬底、诸如具有金属化侧的电路板之类的板、引线框架等。通过各自的铜通孔220将在另一个衬底210上布置的铜互连金属化200连接至衬底铜金属化110的每个对应的接触区114，所述铜通孔220在第一端处扩散焊接或烧结222至衬底接触区114，并在相对的第二端处扩散焊接或烧结224至铜互连金属化200。
经由无铝扩散焊接或烧结界面230将铜互连金属化200连接至最后铜管芯金属化层124。针对扩散焊接连接，可以使用裸铜或镀Ag的铜来形成连接界面230。针对烧结连接，可以使用镀Ag层或者Ni/Au或Ni/Pd层来形成连接界面230。在这样的烧结结构中，最易破的层是烧结银层230。因此，可以以孔隙度在烧结层230内小于12%的方式执行烧结工艺。尽管扩散焊接或烧结界面230的强度小于裸铜的强度，但是通过从区域接合件中消除Al或Al合金来显著改进扩散焊接或烧结界面230的强度。
铜互连金属化200连接至管芯120的每个对应Cu接触区域126的除了接触区域126的至少10μm外部外周133以外的整个侧127。照此，铜互连金属化200与管芯120的Cu接触区域126的边缘有一定距离（间隔）。该间隔说明与将第二衬底210置于第一衬底100上相关联的尺寸公差的原因，从而说明未对准的原因。还可以使附加的衬底210的另一侧金属化240。根据图4中所示的实施例，最后铜管芯金属化层124的厚度可以分布在从5μm或更小到50μm的范围内，而铜互连金属化200的厚度可以分布在从20μm到600μm的范围内。
图5图示了与图4中所示的实施例类似的功率模块的另一个实施例，然而，其上布置铜互连金属化302的附加衬底是柔性电绝缘板302。绝缘板302是柔性且非平面的。照此，在没有中间Cu通孔的情况下通过扩散焊接或烧结界面310将铜互连金属化200连接至衬底铜金属化110的每个对应的接触区114。铜互连金属化200与最后铜管芯金属化层124的每个对应的接触区域126之间的区域接合件连接与图4中相同。如果使附加的Cu接触区域126’被构图到最后铜管芯金属化层124中（例如，在如在这里之前所述的晶体管管芯的情况下），则可以在柔性板绝缘层302的顶侧上形成铜互连金属化304，并通过延伸穿过柔性板绝缘层302的导电Cu通孔330将铜互连金属化304连接至管芯120的附加的Cu接触区域126’。
图6图示了包括电绝缘衬底100、铜金属化110和半导体管芯120的功率模块的还有另一个实施例，所述铜金属化110被布置在衬底100的第一侧102上并被构图到管芯附着区112和多个接触区114中，所述半导体管芯120附着至铜金属化110的管芯附着区112。还可以使衬底100的相对第二侧104金属化130，用于附着至例如散热片。衬底100可以是具有形成至管芯的电连接的金属化侧的任何合适的衬底或载体。例如，衬底100可以是DCB衬底、AMB衬底、诸如具有金属化侧的电路板之类的板、引线框架等，如在这里之前所述。半导体管芯120包括有源器件区122和在有源器件区122之上布置的一个或多个铜管芯金属化层124，同样如在这里之前所述。
功率模块进一步包括铜互连金属化400，所述铜互连金属化400经由无铝区域接合件连接至最后铜管芯金属化层124的每个对应的接触区域126，并连接至衬底铜金属化110的每个对应的接触区114。通过具有铜互连金属化400的各自的区域接合件来进行至被构图到最后铜管芯金属化层124中的每个接触区域126的电连接。在最后铜管芯金属化层124与铜互连金属化400之间不使用结合线。最后铜管芯金属化层124与铜互连金属化400之间的区域接合件是无Al的，如在这里之前所述。根据该实施例，铜互连金属化400具有一个或多个夹子400、400’的形式。在图6中示出了两个Cu夹子400、400’。第一Cu夹子400将被构图到最后铜管芯金属化层124中的第一接触区域126连接至衬底100上的对应的Cu接触区114。类似地，第二Cu夹子400’将被构图到最后铜管芯金属化层124中的第二接触区域126’连接到衬底100上的不同Cu接触区114。经由无铝扩散焊接或烧结界面410将每个Cu夹子400、400’连接至管芯120的对应的Cu接触区域126、126’，如在这里之前所述。每个Cu夹子400、400’被连接至管芯120的对应Cu接触区域126的除了接触区域126的至少10μm外部外周133以外的整个侧127。照此，每个Cu夹子400、400’与管芯120的对应的Cu接触区域126的边缘有一定距离（间隔），如在这里之前所述。根据图6中所示的实施例，最后铜管芯金属化层124的厚度可以分布在从5μm或更小至50μm的范围内，并且每个Cu夹子400、400’的厚度可以分布在从200μm至2mm的范围内。
为了描述的容易，使用诸如“在……下”、“在……之下”、“下”、“在……之上”、“上”等之类的空间相对术语来解释一个元件相对于第二元件的定位。除了与图中所描绘的那些取向不同的取向之外，这些术语还意图包括器件的不同取向。此外，还使用诸如“第一”、“第二”等之类的术语来描述各种元件、区、段等，并且也不意图是限制的。遍及整个说明书，相同的术语指的是相同的元件。
如在这里所使用，术语“具有”、“包含”、“包括”、“由……组成”等是指示存在所陈述的元件或特征但不排除附加的元件或特征的开放式术语。冠词“一”、“一个”和“该”意图包括复数以及单数，除非上下文另外清楚地指示。
在考虑到上面的一系列变化和应用的情况下，应该理解的是，本发明不受上文描述限制，也不受附图限制。代之的是，本发明仅受下面的权利要求及其合法等同物限制。

Claims (27)

1.一种功率半导体模块，包括：
电绝缘衬底；
铜金属化，所述铜金属化被布置在衬底的第一侧上并被构图到管芯附着区和多个接触区中；
半导体管芯，所述半导体管芯附着至铜金属化的管芯附着区，并包括有源器件区以及在有源器件区之上布置的一个或多个铜管芯金属化层，有源器件区被布置为比一个或多个铜管芯金属化层更接近于铜金属化，与有源器件区间隔最远的铜管芯金属化层具有在管芯的面向远离衬底的一侧的大部分之上延伸的接触区域；以及
铜互连金属化，所述铜互连金属化经由无铝区域接合件连接至管芯的接触区域，并且连接至铜金属化的接触区中的第一接触区。
2.根据权利要求1所述的功率半导体模块，进一步包括绝缘层，所述绝缘层被一致地布置在衬底、铜金属化、以及管芯的面向远离衬底的侧的横向侧和外周上，其中所述绝缘层具有铜金属化的第一接触区之上的开口，使得铜互连金属化通过绝缘层中的开口连接至铜金属化的第一接触区，并且其中铜互连金属化被布置在绝缘层上，并与绝缘层和管芯的表面形貌一致。
3.根据权利要求2所述的功率半导体模块，其中，
绝缘层被布置在管芯的接触区域的横向侧和至少10μm外周上，使得所述铜互连金属化连接至管芯的接触区域的面向远离衬底的除了接触区域的外周中以外的整个侧。
4.根据权利要求3所述的功率半导体模块，其中，
与有源器件区间隔最远的铜管芯金属化层具有为至少10μm的厚度，并且铜互连金属化具有为至少20μm的厚度。
5.根据权利要求2所述的功率半导体模块，其中，
绝缘层被布置在管芯的接触区域的横向侧上，而铜互连金属化连接至管芯的接触区域的面向远离衬底的整个侧。
6.根据权利要求5所述的功率半导体模块，其中，
与有源器件区间隔最远的铜管芯金属化层具有为1μm或更小的厚度，并且铜互连金属化具有为至少20μm的厚度。
7.根据权利要求1所述的功率半导体模块，其中，
铜互连金属化被布置在另一个衬底的面向管芯的一侧上，并经由无铝扩散焊接或烧结界面来连接至管芯的接触区域。
8.根据权利要求7所述的功率半导体模块，其中，
铜互连金属化通过铜通孔来连接至铜金属化的第一接触区，所述铜通孔在第一端处扩散焊接或烧结至铜金属化，并在相对的第二端处扩散焊接或烧结至铜互连金属化。
9.根据权利要求7所述的功率半导体模块，其中，
铜互连金属化连接至管芯的接触区域的面向远离衬底的除了接触区域的至少10μm外部外周以外的整个侧。
10.根据权利要求7所述的功率半导体模块，其中，
与有源器件区间隔最远的铜管芯金属化层具有为至少5μm的厚度，并且铜互连金属化具有为至少20μm的厚度。
11.根据权利要求1所述的功率半导体模块，其中，
铜互连金属化被布置在绝缘板的面向管芯的一侧上，并经由无铝扩散焊接或烧结界面来连接至管芯的接触区域。
12.根据权利要求11所述的功率半导体模块，其中，
铜互连金属化通过扩散焊接或烧结界面来连接至铜金属化的第一接触区。
13.根据权利要求11所述的功率半导体模块，其中，
铜互连金属化连接至管芯的接触区域的面向远离衬底的除了接触区域的至少10μm外部外周以外的整个侧。
14.根据权利要求11所述的功率半导体模块，其中，
与有源器件区间隔最远的铜管芯金属化层具有为至少5μm的厚度，并且铜互连金属化具有为至少20μm的厚度。
15.根据权利要求11所述的功率半导体模块，其中，
绝缘板是柔性且非平面的。
16.根据权利要求1所述的功率半导体模块，其中，
铜互连金属化是经由无铝扩散焊接或烧结界面来连接至管芯的接触区域的铜夹子。
17.根据权利要求16所述的功率半导体模块，其中，
铜夹子通过扩散焊接或烧结界面来连接至铜金属化的第一接触区。
18.根据权利要求16所述的功率半导体模块，其中，
铜夹子连接至管芯的接触区域的面向远离衬底的除了接触区域的至少10μm外部外周以外的整个侧。
19.根据权利要求16所述的功率半导体模块，其中，
距离有源器件区最远的铜管芯金属化层具有为至少5μm的厚度，并且铜夹子具有为至少200μm的厚度。
20.根据权利要求1所述的功率半导体模块，其中，
与有源器件区间隔最远的铜管芯金属化层具有与铜互连金属化相同的机械强度或比铜互连金属化更大的机械强度。
21.一种组装功率半导体模块的方法，包括：
提供电绝缘衬底和铜金属化，所述铜金属化被布置在衬底的第一侧上并被构图到管芯附着区和多个接触区中；
将半导体管芯附着至所述铜金属化的管芯附着区，其中管芯包括有源器件区和在有源器件区之上布置的一个或多个铜管芯金属化层，有源器件区被布置为比一个或多个铜管芯金属化层更接近于铜金属化，与有源器件区间隔最远的铜管芯金属化层具有在管芯的面向远离衬底的一侧的大部分之上延伸的接触区域；以及
经由无铝区域接合件来将铜互连金属化连接至管芯的接触区域，并且将铜互连金属化连接至铜金属化的接触区中的第一接触区。
22.根据权利要求21所述的方法，进一步包括：
在衬底、铜金属化、以及管芯的面向远离衬底的侧的横向侧和外周上形成一致的绝缘层；
在铜金属化的第一接触区之上穿过绝缘层形成开口；以及
在绝缘层和管芯的接触区域上形成铜互连金属化，使得铜互连金属化与绝缘层和管芯的表面形貌一致，并通过绝缘层中的开口连接至铜金属化的第一接触区。
23.根据权利要求22所述的方法，进一步包括：
在管芯的接触区域的横向侧和至少10μm外周上形成绝缘层，使得所述铜互连金属化连接至管芯的接触区域的面向远离衬底的除了接触区域的外周中以外的整个侧。
24.根据权利要求22所述的方法，进一步包括：
在管芯的接触区域的横向侧上形成绝缘层，使得所述铜互连金属化连接至管芯的接触区域的面向远离衬底的整个侧。
25.根据权利要求22所述的方法，其中，
在绝缘层和管芯的接触区域上形成铜互连金属化包括：
在绝缘层和管芯的接触区域上形成薄铜生长种子层，其中管芯的接触区域具有为1μm或更小的厚度；以及
在薄种子层上电镀地形成铜。
26.根据权利要求21所述的方法，其中，
铜互连金属化被布置在另一个衬底的面向管芯的一侧上，并经由无铝扩散焊接或烧结界面来连接至管芯的接触区域。
27.根据权利要求26所述的方法，其中，
烧结界面包括通过烧结工艺来形成的烧结银层，在所述烧结工艺中，烧结银层的孔隙度小于12%。
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