FR3047111B1 - Assemblage comprenant des moyens d'interconnexion mixtes comportant des elements intermediaires d'interconnexion et des joints frittes metalliques et procede de fabrication - Google Patents

Assemblage comprenant des moyens d'interconnexion mixtes comportant des elements intermediaires d'interconnexion et des joints frittes metalliques et procede de fabrication Download PDF

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Publication number
FR3047111B1
FR3047111B1 FR1650583A FR1650583A FR3047111B1 FR 3047111 B1 FR3047111 B1 FR 3047111B1 FR 1650583 A FR1650583 A FR 1650583A FR 1650583 A FR1650583 A FR 1650583A FR 3047111 B1 FR3047111 B1 FR 3047111B1
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manufacture
assembly
metal sintered
interconnection elements
interconnect means
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FR1650583A
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FR3047111A1 (fr
Inventor
Rabih KHAZAKA
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Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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Commissariat a lEnergie Atomique CEA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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Priority to FR1650583A priority Critical patent/FR3047111B1/fr
Priority to US16/072,867 priority patent/US11011490B2/en
Priority to PCT/EP2017/051667 priority patent/WO2017129687A1/fr
Priority to EP17701352.1A priority patent/EP3408863A1/fr
Publication of FR3047111A1 publication Critical patent/FR3047111A1/fr
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Publication of FR3047111B1 publication Critical patent/FR3047111B1/fr
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    • H01L2224/13638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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    • H01L2224/1605—Shape
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    • H—ELECTRICITY
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    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16238—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bonding area protruding from the surface of the item
    • H—ELECTRICITY
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    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/165—Material
    • H01L2224/16501—Material at the bonding interface
    • H—ELECTRICITY
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8119—Arrangement of the bump connectors prior to mounting
    • H01L2224/81191—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed only on the semiconductor or solid-state body
    • H—ELECTRICITY
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8119—Arrangement of the bump connectors prior to mounting
    • H01L2224/81193—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/812—Applying energy for connecting
    • H01L2224/81201—Compression bonding
    • H01L2224/81203—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
    • H—ELECTRICITY
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/812—Applying energy for connecting
    • H01L2224/81201—Compression bonding
    • H01L2224/81203—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
    • H01L2224/81204—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding with a graded temperature profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/812—Applying energy for connecting
    • H01L2224/81201—Compression bonding
    • H01L2224/81208—Compression bonding applying unidirectional static pressure
    • H—ELECTRICITY
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/818—Bonding techniques
    • H01L2224/8184—Sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/38—Effects and problems related to the device integration
    • H01L2924/381—Pitch distance

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Wire Bonding (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Powder Metallurgy (AREA)
FR1650583A 2016-01-26 2016-01-26 Assemblage comprenant des moyens d'interconnexion mixtes comportant des elements intermediaires d'interconnexion et des joints frittes metalliques et procede de fabrication Active FR3047111B1 (fr)

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FR1650583A FR3047111B1 (fr) 2016-01-26 2016-01-26 Assemblage comprenant des moyens d'interconnexion mixtes comportant des elements intermediaires d'interconnexion et des joints frittes metalliques et procede de fabrication
US16/072,867 US11011490B2 (en) 2016-01-26 2017-01-26 Assembly comprising hybrid interconnecting means including intermediate interconnecting elements and sintered metal joints, and manufacturing process
PCT/EP2017/051667 WO2017129687A1 (fr) 2016-01-26 2017-01-26 Assemblage comprenant des moyens d'interconnexion mixtes comportant des elements intermediaires d'interconnexion et des joints frittes metalliques et procede de fabrication
EP17701352.1A EP3408863A1 (fr) 2016-01-26 2017-01-26 Assemblage comprenant des moyens d'interconnexion mixtes comportant des elements intermediaires d'interconnexion et des joints frittes metalliques et procede de fabrication

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FR1650583A FR3047111B1 (fr) 2016-01-26 2016-01-26 Assemblage comprenant des moyens d'interconnexion mixtes comportant des elements intermediaires d'interconnexion et des joints frittes metalliques et procede de fabrication

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US10759658B2 (en) * 2018-12-10 2020-09-01 Texas Instruments Incorporated Hermetic vertical shear weld wafer bonding
US10910336B2 (en) * 2019-01-29 2021-02-02 Shih-Chi Chen Chip package structure
US11329018B2 (en) * 2019-10-23 2022-05-10 International Business Machines Corporation Forming of bump structure
US11348875B2 (en) * 2020-02-27 2022-05-31 Micron Technology, Inc. Semiconductor devices with flexible connector array
EP3872855A1 (fr) * 2020-02-27 2021-09-01 Siemens Aktiengesellschaft Substrat semi-fini pour un module électronique de puissance avec une structure de câblage avec des protubérances et procédé de fabrication correspondant
KR102273299B1 (ko) 2020-04-27 2021-07-06 알에프에이치아이씨 주식회사 열 확산 및 임피던스 정합을 위한 GaN 기반 고출력 트랜지스터 구조체 및 이를 제조하는 방법
WO2021256040A1 (fr) * 2020-06-15 2021-12-23 ソニーセミコンダクタソリューションズ株式会社 Dispositif à semi-conducteurs et son procédé de production
WO2021259536A2 (fr) 2020-06-23 2021-12-30 Siemens Aktiengesellschaft Procédé de mise en contact d'un semi-conducteur de puissance sur un substrat
US20220262754A1 (en) * 2021-02-18 2022-08-18 International Business Machines Corporation Sintering a nanoparticle paste for semiconductor chip join
FR3121277B1 (fr) 2021-03-26 2024-02-16 Safran Electronics & Defense Procédé pour assembler un composant électronique à un substrat
FR3121278A1 (fr) 2021-03-26 2022-09-30 Safran Electronics & Defense Procédé pour assembler un composant électronique à un substrat par pressage

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EP3408863A1 (fr) 2018-12-05
US20180374813A1 (en) 2018-12-27
US11011490B2 (en) 2021-05-18
WO2017129687A1 (fr) 2017-08-03

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