FR3121277B1 - Procédé pour assembler un composant électronique à un substrat - Google Patents

Procédé pour assembler un composant électronique à un substrat Download PDF

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Publication number
FR3121277B1
FR3121277B1 FR2103058A FR2103058A FR3121277B1 FR 3121277 B1 FR3121277 B1 FR 3121277B1 FR 2103058 A FR2103058 A FR 2103058A FR 2103058 A FR2103058 A FR 2103058A FR 3121277 B1 FR3121277 B1 FR 3121277B1
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Prior art keywords
substrate
electronic component
assembling
component
peak
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FR2103058A
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English (en)
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FR3121277A1 (fr
Inventor
Jean-Christophe Riou
Corinne Pons
Alain Jaussent
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Safran Electronics and Defense SAS
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Safran Electronics and Defense SAS
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Priority to FR2103058A priority Critical patent/FR3121277B1/fr
Priority to EP22717235.0A priority patent/EP4315403A2/fr
Priority to CN202280033766.2A priority patent/CN117280451A/zh
Priority to PCT/FR2022/050572 priority patent/WO2022200749A2/fr
Publication of FR3121277A1 publication Critical patent/FR3121277A1/fr
Application granted granted Critical
Publication of FR3121277B1 publication Critical patent/FR3121277B1/fr
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    • H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate

Abstract

Le procédé comprend les étapes successives suivantes :- on dépose un matériau de frittage (26) sur l'un parmi un composant électronique (28) et un substrat (30),- on chauffe le matériau (26) de façon à placer une température du matériau dans un pic exothermique préalable qui précède un pic exothermique de frittage sans que la température du matériau atteigne un maximum du pic exothermique préalable,- on fixe au matériau (26) l'autre parmi le composant (28) et le substrat (30) de sorte que le matériau est interposé entre le composant et le substrat, et- on presse le matériau (26) à chaud de façon à réaliser un fluage du matériau. Figure de l’abrégé : Fig. 4
FR2103058A 2021-03-26 2021-03-26 Procédé pour assembler un composant électronique à un substrat Active FR3121277B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR2103058A FR3121277B1 (fr) 2021-03-26 2021-03-26 Procédé pour assembler un composant électronique à un substrat
EP22717235.0A EP4315403A2 (fr) 2021-03-26 2022-03-28 Procede pour assembler un composant electronique a un substrat par le biais d'un frittage
CN202280033766.2A CN117280451A (zh) 2021-03-26 2022-03-28 通过烧结将电子部件安装到衬底上的方法
PCT/FR2022/050572 WO2022200749A2 (fr) 2021-03-26 2022-03-28 Procede pour assembler un composant electronique a un substrat

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FR2103058A FR3121277B1 (fr) 2021-03-26 2021-03-26 Procédé pour assembler un composant électronique à un substrat
FR2103058 2021-03-26

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FR3121277B1 true FR3121277B1 (fr) 2024-02-16

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CN (1) CN117280451A (fr)
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Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8257795B2 (en) 2004-02-18 2012-09-04 Virginia Tech Intellectual Properties, Inc. Nanoscale metal paste for interconnect and method of use
US8555491B2 (en) 2007-07-19 2013-10-15 Alpha Metals, Inc. Methods of attaching a die to a substrate
US8637379B2 (en) 2009-10-08 2014-01-28 Infineon Technologies Ag Device including a semiconductor chip and a carrier and fabrication method
JP5410643B1 (ja) * 2012-02-20 2014-02-05 株式会社応用ナノ粒子研究所 酸素供給源含有複合ナノ金属ペースト及び接合方法
US20130256894A1 (en) 2012-03-29 2013-10-03 International Rectifier Corporation Porous Metallic Film as Die Attach and Interconnect
WO2013185839A1 (fr) * 2012-06-15 2013-12-19 Osram Opto Semiconductors Gmbh Procédé de fabrication d'un composant à semi-conducteur optoélectronique comprenant une couche de liaison frittée sous l'action de la chaleur, d'une pression et d'ultrasons
US8835299B2 (en) * 2012-08-29 2014-09-16 Infineon Technologies Ag Pre-sintered semiconductor die structure
US9099441B2 (en) * 2013-02-05 2015-08-04 Infineon Technologies Austria Ag Power transistor arrangement and method for manufacturing the same
DE102013003527A1 (de) 2013-03-04 2014-09-04 Danfoss Silicon Power Gmbh Vorrichtung zum Niedertemperatur-Drucksintern, Verfahren zum Niedertemperatur-Drucksintern und leistungselektronische Baugruppe
WO2015192004A1 (fr) * 2014-06-12 2015-12-17 Alpha Metals, Inc. Frittage de matériaux et procédés d'attachement l'utilisant
FR3041210B1 (fr) 2015-09-15 2017-09-15 Sagem Defense Securite Procede d'assemblage par frittage d'argent sans pression
FR3047111B1 (fr) 2016-01-26 2018-03-23 Commissariat A L'energie Atomique Et Aux Energies Alternatives Assemblage comprenant des moyens d'interconnexion mixtes comportant des elements intermediaires d'interconnexion et des joints frittes metalliques et procede de fabrication
US11626352B2 (en) * 2017-08-02 2023-04-11 Rohm Co., Ltd. Semiconductor device and method for manufacturing the same

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CN117280451A (zh) 2023-12-22
WO2022200749A2 (fr) 2022-09-29
FR3121277A1 (fr) 2022-09-30
EP4315403A2 (fr) 2024-02-07
WO2022200749A3 (fr) 2022-12-29

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