CN103403864B - 具有凝聚端子的半导体封装体 - Google Patents

具有凝聚端子的半导体封装体 Download PDF

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Publication number
CN103403864B
CN103403864B CN201280010020.6A CN201280010020A CN103403864B CN 103403864 B CN103403864 B CN 103403864B CN 201280010020 A CN201280010020 A CN 201280010020A CN 103403864 B CN103403864 B CN 103403864B
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Prior art keywords
pad
metal
bonding
terminal
sintering
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Chinese (zh)
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CN103403864A (zh
Inventor
D·R·爱德华兹
S·P·格鲁姆
M·穆尔图扎
M·D·罗米格
K·哈亚塔
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Texas Instruments Inc
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Texas Instruments Inc
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/01Manufacture or treatment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01Manufacture or treatment
    • H10W70/04Manufacture or treatment of leadframes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40Leadframes
    • H10W70/456Materials
    • H10W70/457Materials of metallic layers on leadframes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/01Manufacture or treatment
    • H10W74/019Manufacture or treatment using temporary auxiliary substrates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/073Connecting or disconnecting of die-attach connectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/073Connecting or disconnecting of die-attach connectors
    • H10W72/07302Connecting or disconnecting of die-attach connectors using an auxiliary member
    • H10W72/07304Connecting or disconnecting of die-attach connectors using an auxiliary member the auxiliary member being temporary, e.g. a sacrificial coating
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/073Connecting or disconnecting of die-attach connectors
    • H10W72/07331Connecting techniques
    • H10W72/07337Connecting techniques using a polymer adhesive, e.g. an adhesive based on silicone or epoxy
    • H10W72/07338Connecting techniques using a polymer adhesive, e.g. an adhesive based on silicone or epoxy hardening the adhesive by curing, e.g. thermosetting
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/075Connecting or disconnecting of bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/075Connecting or disconnecting of bond wires
    • H10W72/07502Connecting or disconnecting of bond wires using an auxiliary member
    • H10W72/07504Connecting or disconnecting of bond wires using an auxiliary member the auxiliary member being temporary, e.g. a sacrificial coating
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/30Die-attach connectors
    • H10W72/351Materials of die-attach connectors
    • H10W72/352Materials of die-attach connectors comprising metals or metalloids, e.g. solders
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/30Die-attach connectors
    • H10W72/351Materials of die-attach connectors
    • H10W72/353Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics
    • H10W72/354Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics comprising polymers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/531Shapes of wire connectors
    • H10W72/536Shapes of wire connectors the connected ends being ball-shaped
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/531Shapes of wire connectors
    • H10W72/5363Shapes of wire connectors the connected ends being wedge-shaped
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/551Materials of bond wires
    • H10W72/552Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/551Materials of bond wires
    • H10W72/552Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5524Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/551Materials of bond wires
    • H10W72/552Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5525Materials of bond wires comprising metals or metalloids, e.g. silver comprising copper [Cu]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/59Bond pads specially adapted therefor
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/851Dispositions of multiple connectors or interconnections
    • H10W72/874On different surfaces
    • H10W72/884Die-attach connectors and bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/951Materials of bond pads
    • H10W72/952Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Die Bonding (AREA)
  • Powder Metallurgy (AREA)
CN201280010020.6A 2011-02-23 2012-02-23 具有凝聚端子的半导体封装体 Active CN103403864B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201161445630P 2011-02-23 2011-02-23
US61/445,630 2011-02-23
US13/351,579 2012-01-17
US13/351,579 US8643165B2 (en) 2011-02-23 2012-01-17 Semiconductor device having agglomerate terminals
PCT/US2012/026378 WO2012116218A2 (en) 2011-02-23 2012-02-23 Semiconductor packages with agglomerate terminals

Publications (2)

Publication Number Publication Date
CN103403864A CN103403864A (zh) 2013-11-20
CN103403864B true CN103403864B (zh) 2016-07-06

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Application Number Title Priority Date Filing Date
CN201280010020.6A Active CN103403864B (zh) 2011-02-23 2012-02-23 具有凝聚端子的半导体封装体

Country Status (4)

Country Link
US (2) US8643165B2 (https=)
JP (1) JP6116488B2 (https=)
CN (1) CN103403864B (https=)
WO (1) WO2012116218A2 (https=)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103907185B (zh) * 2011-08-11 2016-10-19 联达科技控股有限公司 具有多材料印刷形成的包装部件的引线载体
US8586480B1 (en) * 2012-07-31 2013-11-19 Ixys Corporation Power MOSFET having selectively silvered pads for clip and bond wire attach
KR101988890B1 (ko) * 2012-10-30 2019-10-01 한국전자통신연구원 솔더 온 패드의 제조방법 및 그를 이용한 플립 칩 본딩 방법
JP6146642B2 (ja) * 2012-11-30 2017-06-14 大日本印刷株式会社 半導体装置用基板の製造方法および樹脂封止型半導体装置の製造方法
US8815648B1 (en) 2013-04-01 2014-08-26 Texas Instruments Incorporated Multi-step sintering of metal paste for semiconductor device wire bonding
US9978667B2 (en) * 2013-08-07 2018-05-22 Texas Instruments Incorporated Semiconductor package with lead frame and recessed solder terminals
US11217515B2 (en) * 2014-09-11 2022-01-04 Semiconductor Components Industries, Llc Semiconductor package structures and methods of manufacture
US10847691B2 (en) * 2014-12-11 2020-11-24 Luminus, Inc. LED flip chip structures with extended contact pads formed by sintering silver
US9640468B2 (en) * 2014-12-24 2017-05-02 Stmicroelectronics S.R.L. Process for manufacturing a package for a surface-mount semiconductor device and semiconductor device
US20180047589A1 (en) * 2015-05-04 2018-02-15 Eoplex Limited Lead carrier with print formed package components and conductive path redistribution structures
CN107912069A (zh) * 2015-05-04 2018-04-13 由普莱克斯有限公司 不具有裸片附接垫的引线载体结构和由此形成的封装
US10727085B2 (en) * 2015-12-30 2020-07-28 Texas Instruments Incorporated Printed adhesion deposition to mitigate integrated circuit package delamination
US9896330B2 (en) * 2016-01-13 2018-02-20 Texas Instruments Incorporated Structure and method for packaging stress-sensitive micro-electro-mechanical system stacked onto electronic circuit chip
KR102442262B1 (ko) * 2017-04-21 2022-09-08 미쓰이 가가쿠 가부시키가이샤 반도체 기판의 제조 방법, 반도체 장치 및 그의 제조 방법
US10405417B2 (en) * 2017-05-01 2019-09-03 Nxp Usa, Inc. Packaged microelectronic component mounting using sinter attachment
FR3083920B1 (fr) * 2018-07-13 2024-12-13 Linxens Holding Procede de fabrication de boitiers de composant electronique et boitier de composant electronique obtenu par ce procede
CN110391143A (zh) * 2019-07-02 2019-10-29 东莞链芯半导体科技有限公司 半导体封装结构及其封装方法
US11495557B2 (en) * 2020-03-20 2022-11-08 Advanced Semiconductor Engineering, Inc. Semiconductor device and method of manufacturing the same
US11562947B2 (en) * 2020-07-06 2023-01-24 Panjit International Inc. Semiconductor package having a conductive pad with an anchor flange
CN113814597A (zh) * 2021-10-28 2021-12-21 株洲中车时代半导体有限公司 电子器件的焊接方法
CN114883284A (zh) * 2022-03-25 2022-08-09 清华大学 碳化硅芯片的耐高温封装结构及其制备方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040245648A1 (en) * 2002-09-18 2004-12-09 Hiroshi Nagasawa Bonding material and bonding method
US20060017069A1 (en) * 2002-02-18 2006-01-26 Robert Bergmann Electronic component with an adhesive layer and method for the production thereof
CN1744308A (zh) * 2004-09-04 2006-03-08 三星Techwin株式会社 倒装芯片半导体封装件及其制造方法
US20080145607A1 (en) * 2006-12-18 2008-06-19 Renesas Technology Corp. Semiconductor apparatus and manufacturing method of semiconductor apparatus

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5318651A (en) * 1991-11-27 1994-06-07 Nec Corporation Method of bonding circuit boards
JP2001250884A (ja) * 2000-03-08 2001-09-14 Sanyo Electric Co Ltd 回路装置の製造方法
WO2002035554A1 (en) 2000-10-25 2002-05-02 Harima Chemicals, Inc. Electroconductive metal paste and method for production thereof
DE10245451B4 (de) * 2002-09-27 2005-07-28 Infineon Technologies Ag Elektronisches Bauteil mit einem Halbleiterchip, der flexible Chipkontakte aufweist, und Verfahren zur Herstellung desselben, sowie Halbleiterwafer
EP1615263A4 (en) * 2003-02-05 2006-10-18 Senju Metal Industry Co METHOD FOR CONNECTING CONNECTIONS AND METHOD FOR ATTACHING A SEMICONDUCTOR CONSTRUCTION ELEMENT
WO2004103043A1 (ja) 2003-05-16 2004-11-25 Harima Chemicals, Inc. 銅微粒子焼結体型の微細形状導電体の形成方法、該方法を応用した銅微細配線ならびに銅薄膜の形成方法
KR100740634B1 (ko) 2003-09-12 2007-07-18 내셔날 인스티튜트 오브 어드밴스드 인더스트리얼 사이언스 앤드 테크놀로지 미세한 액적(液滴)의 형상으로 분사해, 적층 도포 가능한금속 나노 입자 분산액
US8053171B2 (en) * 2004-01-16 2011-11-08 Semiconductor Energy Laboratory Co., Ltd. Substrate having film pattern and manufacturing method of the same, manufacturing method of semiconductor device, liquid crystal television, and EL television
EP1780732B1 (en) 2004-06-23 2009-04-01 Harima Chemicals, Inc. Conductive metal paste
US7550319B2 (en) * 2005-09-01 2009-06-23 E. I. Du Pont De Nemours And Company Low temperature co-fired ceramic (LTCC) tape compositions, light emitting diode (LED) modules, lighting devices and method of forming thereof
US7982307B2 (en) * 2006-11-22 2011-07-19 Agere Systems Inc. Integrated circuit chip assembly having array of thermally conductive features arranged in aperture of circuit substrate
US7955901B2 (en) * 2007-10-04 2011-06-07 Infineon Technologies Ag Method for producing a power semiconductor module comprising surface-mountable flat external contacts
US7836586B2 (en) 2008-08-21 2010-11-23 National Semiconductor Corporation Thin foil semiconductor package
US7754533B2 (en) 2008-08-28 2010-07-13 Infineon Technologies Ag Method of manufacturing a semiconductor device
US9041228B2 (en) * 2008-12-23 2015-05-26 Micron Technology, Inc. Molding compound including a carbon nano-tube dispersion
JP5617210B2 (ja) * 2009-09-14 2014-11-05 デクセリアルズ株式会社 光反射性異方性導電接着剤及び発光装置
JP5532419B2 (ja) * 2010-06-17 2014-06-25 富士電機株式会社 絶縁材、金属ベース基板および半導体モジュール並びにこれらの製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060017069A1 (en) * 2002-02-18 2006-01-26 Robert Bergmann Electronic component with an adhesive layer and method for the production thereof
US7476981B2 (en) * 2002-02-18 2009-01-13 Infineon Technologies Ag Electronic module with layer of adhesive and process for producing it
US20040245648A1 (en) * 2002-09-18 2004-12-09 Hiroshi Nagasawa Bonding material and bonding method
CN1744308A (zh) * 2004-09-04 2006-03-08 三星Techwin株式会社 倒装芯片半导体封装件及其制造方法
US20080145607A1 (en) * 2006-12-18 2008-06-19 Renesas Technology Corp. Semiconductor apparatus and manufacturing method of semiconductor apparatus

Also Published As

Publication number Publication date
JP2014509455A (ja) 2014-04-17
US8716068B2 (en) 2014-05-06
US8643165B2 (en) 2014-02-04
US20120211889A1 (en) 2012-08-23
CN103403864A (zh) 2013-11-20
US20140038358A1 (en) 2014-02-06
JP6116488B2 (ja) 2017-04-19
WO2012116218A2 (en) 2012-08-30
WO2012116218A3 (en) 2012-11-22

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