CN103403864B - 具有凝聚端子的半导体封装体 - Google Patents

具有凝聚端子的半导体封装体 Download PDF

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Publication number
CN103403864B
CN103403864B CN201280010020.6A CN201280010020A CN103403864B CN 103403864 B CN103403864 B CN 103403864B CN 201280010020 A CN201280010020 A CN 201280010020A CN 103403864 B CN103403864 B CN 103403864B
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Prior art keywords
pad
metal
bonding
terminal
sintering
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Chinese (zh)
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CN103403864A (zh
Inventor
D·R·爱德华兹
S·P·格鲁姆
M·穆尔图扎
M·D·罗米格
K·哈亚塔
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Texas Instruments Inc
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Texas Instruments Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/04—Manufacture or treatment of leadframes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/456—Materials
    • H10W70/457—Materials of metallic layers on leadframes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H10W74/019—Manufacture or treatment using temporary auxiliary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07302—Connecting or disconnecting of die-attach connectors using an auxiliary member
    • H10W72/07304—Connecting or disconnecting of die-attach connectors using an auxiliary member the auxiliary member being temporary, e.g. a sacrificial coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H10W72/07337—Connecting techniques using a polymer adhesive, e.g. an adhesive based on silicone or epoxy
    • H10W72/07338—Connecting techniques using a polymer adhesive, e.g. an adhesive based on silicone or epoxy hardening the adhesive by curing, e.g. thermosetting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07502—Connecting or disconnecting of bond wires using an auxiliary member
    • H10W72/07504—Connecting or disconnecting of bond wires using an auxiliary member the auxiliary member being temporary, e.g. a sacrificial coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/352—Materials of die-attach connectors comprising metals or metalloids, e.g. solders
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/353—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics
    • H10W72/354—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics comprising polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5524—Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5525—Materials of bond wires comprising metals or metalloids, e.g. silver comprising copper [Cu]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Die Bonding (AREA)
  • Powder Metallurgy (AREA)
CN201280010020.6A 2011-02-23 2012-02-23 具有凝聚端子的半导体封装体 Active CN103403864B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201161445630P 2011-02-23 2011-02-23
US61/445,630 2011-02-23
US13/351,579 US8643165B2 (en) 2011-02-23 2012-01-17 Semiconductor device having agglomerate terminals
US13/351,579 2012-01-17
PCT/US2012/026378 WO2012116218A2 (en) 2011-02-23 2012-02-23 Semiconductor packages with agglomerate terminals

Publications (2)

Publication Number Publication Date
CN103403864A CN103403864A (zh) 2013-11-20
CN103403864B true CN103403864B (zh) 2016-07-06

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Application Number Title Priority Date Filing Date
CN201280010020.6A Active CN103403864B (zh) 2011-02-23 2012-02-23 具有凝聚端子的半导体封装体

Country Status (4)

Country Link
US (2) US8643165B2 (enExample)
JP (1) JP6116488B2 (enExample)
CN (1) CN103403864B (enExample)
WO (1) WO2012116218A2 (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014522130A (ja) * 2011-08-11 2014-08-28 エオプレックス リミテッド 複数材料の印刷により形成されたパッケージ構成要素を伴うリードキャリア
US8586480B1 (en) * 2012-07-31 2013-11-19 Ixys Corporation Power MOSFET having selectively silvered pads for clip and bond wire attach
KR101988890B1 (ko) * 2012-10-30 2019-10-01 한국전자통신연구원 솔더 온 패드의 제조방법 및 그를 이용한 플립 칩 본딩 방법
JP6146642B2 (ja) * 2012-11-30 2017-06-14 大日本印刷株式会社 半導体装置用基板の製造方法および樹脂封止型半導体装置の製造方法
US8815648B1 (en) 2013-04-01 2014-08-26 Texas Instruments Incorporated Multi-step sintering of metal paste for semiconductor device wire bonding
US9978667B2 (en) * 2013-08-07 2018-05-22 Texas Instruments Incorporated Semiconductor package with lead frame and recessed solder terminals
US11217515B2 (en) * 2014-09-11 2022-01-04 Semiconductor Components Industries, Llc Semiconductor package structures and methods of manufacture
US10847691B2 (en) * 2014-12-11 2020-11-24 Luminus, Inc. LED flip chip structures with extended contact pads formed by sintering silver
US9640468B2 (en) * 2014-12-24 2017-05-02 Stmicroelectronics S.R.L. Process for manufacturing a package for a surface-mount semiconductor device and semiconductor device
JP2018518827A (ja) * 2015-05-04 2018-07-12 イーオープレックス リミテッド プリント形成パッケージ部品と導電パス再配線構造体のリードキャリア
JP2018514947A (ja) * 2015-05-04 2018-06-07 イーオープレックス リミテッド ダイ取り付けパッドがないリードキャリア構造およびそれに形成されたパッケージ
US10727085B2 (en) * 2015-12-30 2020-07-28 Texas Instruments Incorporated Printed adhesion deposition to mitigate integrated circuit package delamination
US9896330B2 (en) * 2016-01-13 2018-02-20 Texas Instruments Incorporated Structure and method for packaging stress-sensitive micro-electro-mechanical system stacked onto electronic circuit chip
CN110546746A (zh) * 2017-04-21 2019-12-06 三井化学株式会社 半导体衬底的制造方法、半导体器件及其制造方法
US10405417B2 (en) * 2017-05-01 2019-09-03 Nxp Usa, Inc. Packaged microelectronic component mounting using sinter attachment
FR3083920B1 (fr) * 2018-07-13 2024-12-13 Linxens Holding Procede de fabrication de boitiers de composant electronique et boitier de composant electronique obtenu par ce procede
CN110391143A (zh) * 2019-07-02 2019-10-29 东莞链芯半导体科技有限公司 半导体封装结构及其封装方法
US11495557B2 (en) * 2020-03-20 2022-11-08 Advanced Semiconductor Engineering, Inc. Semiconductor device and method of manufacturing the same
US11562947B2 (en) * 2020-07-06 2023-01-24 Panjit International Inc. Semiconductor package having a conductive pad with an anchor flange
CN113814597A (zh) * 2021-10-28 2021-12-21 株洲中车时代半导体有限公司 电子器件的焊接方法
US20230187390A1 (en) * 2021-12-15 2023-06-15 Texas Instruments Incorporated Semiconductor die with dissolvable metal layer
CN114883284A (zh) * 2022-03-25 2022-08-09 清华大学 碳化硅芯片的耐高温封装结构及其制备方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040245648A1 (en) * 2002-09-18 2004-12-09 Hiroshi Nagasawa Bonding material and bonding method
US20060017069A1 (en) * 2002-02-18 2006-01-26 Robert Bergmann Electronic component with an adhesive layer and method for the production thereof
CN1744308A (zh) * 2004-09-04 2006-03-08 三星Techwin株式会社 倒装芯片半导体封装件及其制造方法
US20080145607A1 (en) * 2006-12-18 2008-06-19 Renesas Technology Corp. Semiconductor apparatus and manufacturing method of semiconductor apparatus

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5318651A (en) * 1991-11-27 1994-06-07 Nec Corporation Method of bonding circuit boards
JP2001250884A (ja) * 2000-03-08 2001-09-14 Sanyo Electric Co Ltd 回路装置の製造方法
CA2426861C (en) 2000-10-25 2008-10-28 Yorishige Matsuba Conductive metal paste
DE10245451B4 (de) * 2002-09-27 2005-07-28 Infineon Technologies Ag Elektronisches Bauteil mit einem Halbleiterchip, der flexible Chipkontakte aufweist, und Verfahren zur Herstellung desselben, sowie Halbleiterwafer
US7524748B2 (en) * 2003-02-05 2009-04-28 Senju Metal Industry Co., Ltd. Method of interconnecting terminals and method of mounting semiconductor devices
WO2004103043A1 (ja) 2003-05-16 2004-11-25 Harima Chemicals, Inc. 銅微粒子焼結体型の微細形状導電体の形成方法、該方法を応用した銅微細配線ならびに銅薄膜の形成方法
JP4284550B2 (ja) 2003-09-12 2009-06-24 独立行政法人産業技術総合研究所 微細な液滴の形状で噴射し、積層塗布可能な金属ナノ粒子分散液
US8053171B2 (en) * 2004-01-16 2011-11-08 Semiconductor Energy Laboratory Co., Ltd. Substrate having film pattern and manufacturing method of the same, manufacturing method of semiconductor device, liquid crystal television, and EL television
JP4496216B2 (ja) 2004-06-23 2010-07-07 ハリマ化成株式会社 導電性金属ペースト
US7550319B2 (en) * 2005-09-01 2009-06-23 E. I. Du Pont De Nemours And Company Low temperature co-fired ceramic (LTCC) tape compositions, light emitting diode (LED) modules, lighting devices and method of forming thereof
US7982307B2 (en) * 2006-11-22 2011-07-19 Agere Systems Inc. Integrated circuit chip assembly having array of thermally conductive features arranged in aperture of circuit substrate
US7955901B2 (en) * 2007-10-04 2011-06-07 Infineon Technologies Ag Method for producing a power semiconductor module comprising surface-mountable flat external contacts
US7836586B2 (en) 2008-08-21 2010-11-23 National Semiconductor Corporation Thin foil semiconductor package
US7754533B2 (en) 2008-08-28 2010-07-13 Infineon Technologies Ag Method of manufacturing a semiconductor device
US9041228B2 (en) * 2008-12-23 2015-05-26 Micron Technology, Inc. Molding compound including a carbon nano-tube dispersion
JP5617210B2 (ja) * 2009-09-14 2014-11-05 デクセリアルズ株式会社 光反射性異方性導電接着剤及び発光装置
JP5532419B2 (ja) * 2010-06-17 2014-06-25 富士電機株式会社 絶縁材、金属ベース基板および半導体モジュール並びにこれらの製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060017069A1 (en) * 2002-02-18 2006-01-26 Robert Bergmann Electronic component with an adhesive layer and method for the production thereof
US7476981B2 (en) * 2002-02-18 2009-01-13 Infineon Technologies Ag Electronic module with layer of adhesive and process for producing it
US20040245648A1 (en) * 2002-09-18 2004-12-09 Hiroshi Nagasawa Bonding material and bonding method
CN1744308A (zh) * 2004-09-04 2006-03-08 三星Techwin株式会社 倒装芯片半导体封装件及其制造方法
US20080145607A1 (en) * 2006-12-18 2008-06-19 Renesas Technology Corp. Semiconductor apparatus and manufacturing method of semiconductor apparatus

Also Published As

Publication number Publication date
JP6116488B2 (ja) 2017-04-19
WO2012116218A3 (en) 2012-11-22
WO2012116218A2 (en) 2012-08-30
US8716068B2 (en) 2014-05-06
CN103403864A (zh) 2013-11-20
US20140038358A1 (en) 2014-02-06
US8643165B2 (en) 2014-02-04
JP2014509455A (ja) 2014-04-17
US20120211889A1 (en) 2012-08-23

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