CN103337480B - 有源元件基板与其制作方法及显示器的制作方法 - Google Patents
有源元件基板与其制作方法及显示器的制作方法 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 40
- 238000004519 manufacturing process Methods 0.000 title claims description 21
- 229910052751 metal Inorganic materials 0.000 claims abstract description 10
- 239000002184 metal Substances 0.000 claims abstract description 10
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 10
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 10
- 239000010410 layer Substances 0.000 claims description 202
- 238000000034 method Methods 0.000 claims description 91
- 239000000463 material Substances 0.000 claims description 34
- 238000005520 cutting process Methods 0.000 claims description 18
- 230000015572 biosynthetic process Effects 0.000 claims description 17
- 238000005229 chemical vapour deposition Methods 0.000 claims description 13
- 238000000151 deposition Methods 0.000 claims description 12
- 230000008021 deposition Effects 0.000 claims description 12
- 238000010276 construction Methods 0.000 claims description 11
- 239000004695 Polyether sulfone Substances 0.000 claims description 9
- 239000004697 Polyetherimide Substances 0.000 claims description 9
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 9
- 229920003366 poly(p-phenylene terephthalamide) Polymers 0.000 claims description 9
- 229920006393 polyether sulfone Polymers 0.000 claims description 9
- 229920001601 polyetherimide Polymers 0.000 claims description 9
- 238000004544 sputter deposition Methods 0.000 claims description 9
- 239000011651 chromium Substances 0.000 claims description 8
- 239000010949 copper Substances 0.000 claims description 8
- 239000010931 gold Substances 0.000 claims description 8
- 239000011241 protective layer Substances 0.000 claims description 7
- 239000004642 Polyimide Substances 0.000 claims description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 6
- -1 ice alkene Chemical class 0.000 claims description 6
- 238000010422 painting Methods 0.000 claims description 6
- 229920000052 poly(p-xylylene) Polymers 0.000 claims description 6
- 229920002480 polybenzimidazole Polymers 0.000 claims description 6
- 239000004417 polycarbonate Substances 0.000 claims description 6
- 229920001721 polyimide Polymers 0.000 claims description 6
- 239000010948 rhodium Substances 0.000 claims description 6
- 229910000077 silane Inorganic materials 0.000 claims description 6
- 238000004528 spin coating Methods 0.000 claims description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 5
- 229910052804 chromium Inorganic materials 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 229910052750 molybdenum Inorganic materials 0.000 claims description 5
- 239000011733 molybdenum Substances 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- 239000011701 zinc Substances 0.000 claims description 5
- WHEVDDQAPKQQAV-UHFFFAOYSA-N 2-[4-(1h-benzimidazol-2-yl)phenyl]-1h-benzimidazole Chemical compound C1=CC=C2NC(C3=CC=C(C=C3)C=3NC4=CC=CC=C4N=3)=NC2=C1 WHEVDDQAPKQQAV-UHFFFAOYSA-N 0.000 claims description 3
- 229920002873 Polyethylenimine Polymers 0.000 claims description 3
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 3
- 150000001335 aliphatic alkanes Chemical class 0.000 claims description 3
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 239000012994 photoredox catalyst Substances 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229920003208 poly(ethylene sulfide) Polymers 0.000 claims description 3
- 229920000636 poly(norbornene) polymer Polymers 0.000 claims description 3
- 229920000927 poly(p-phenylene benzobisoxazole) Polymers 0.000 claims description 3
- 229920002577 polybenzoxazole Polymers 0.000 claims description 3
- 229920000515 polycarbonate Polymers 0.000 claims description 3
- 229910052703 rhodium Inorganic materials 0.000 claims description 3
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 3
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 230000006378 damage Effects 0.000 abstract description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 8
- 239000011787 zinc oxide Substances 0.000 description 8
- 238000001259 photo etching Methods 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 238000000059 patterning Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910006404 SnO 2 Inorganic materials 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 239000004411 aluminium Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910052718 tin Inorganic materials 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- JYMITAMFTJDTAE-UHFFFAOYSA-N aluminum zinc oxygen(2-) Chemical compound [O-2].[Al+3].[Zn+2] JYMITAMFTJDTAE-UHFFFAOYSA-N 0.000 description 2
- CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Inorganic materials [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000003094 microcapsule Substances 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 238000007764 slot die coating Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/7806—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate
- H01L21/7813—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate leaving a reusable substrate, e.g. epitaxial lift off
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
- H01L27/1266—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
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- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0313—Organic insulating material
- H05K1/0353—Organic insulating material consisting of two or more materials, e.g. two or more polymers, polymer + filler, + reinforcement
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- H05K1/18—Printed circuits structurally associated with non-printed electric components
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Abstract
一种有源元件基板与其制作方法及显示器的制作方法,该有源元件基板包含可挠性基板、无机离型层与至少一有源元件。可挠性基板具有相对的第一表面与第二表面,其中第一表面为平坦表面。无机离型层覆盖可挠性基板的第一表面。无机离型层的材质为金属、金属氧化物或上述组合。有源元件位于可挠性基板的第二表面上。本发明提供的有源元件基板可以减少有源元件受损的机率。
Description
技术领域
本发明涉及一种有源元件基板。
背景技术
近年来,业界推出了以可挠性材料作为有源元件基板材质的显示器,由于这种显示器本身可弯折,因此可用来取代传统的纸张或广告看板。
由于有源元件基板的材质具可挠性,因此为了方便工艺进行,制造者需要将可挠性基板固定在玻璃载板上后再形成有源元件,最后再将可挠性基板自玻璃载板剥离,即完成有源元件基板。然而当剥离可挠性基板时,可挠性基板与玻璃载板之间的吸附力可能会导致可挠性基板不易剥离,甚至可能会产生有源元件受损等状况,因此如何改善有源元件基板的剥离工艺成为业界需解决的问题之一。
发明内容
为克服现有技术的缺陷,本发明提供一种有源元件基板,包含可挠性基板、无机离型层(de-bondinglayer)及至少一有源元件。可挠性基板具有相对的第一表面与第二表面,其中第一表面为平坦表面。无机离型层覆盖可挠性基板的第一表面。无机离型层的材质为金属、金属氧化物或上述组合。有源元件位于可挠性基板的第二表面上。
在一或多个实施方式中,无机离型层的材质为金属,且无机离型层的厚度为约0.001至1微米,其中无机离型层的材质为金(Au)、银(Ag)、铂(Pt)、铜(Cu)、钛(Ti)、铝(Al)、铬(Cr)、铅(Pd)、铑(Rh)、钼(Mo)、钨(W)、锌(Zn)、锡(Sn)或上述组合。
在一个或多个实施方式中,无机离型层的材质为金属氧化物,且无机离型层的厚度为约0.001至1微米,其中无机离型层的材质为In2O3、SnO2、ZnO、CdO、TiN、In2O3:Sn(ITO)、ZnO:In(IZO)、ZnO:Ga(GZO)、ZnO:Al(AZO)、SnO2:F、TiO2:Ta、CdIn2O4、Cd2SnO4、Zn2SnO4或上述组合。
在一个或多个实施方式中,可挠性基板的材质为聚酰亚胺(polyimide,PI)、聚碳酸酯(polycarbonate,PC)、聚醚砜(polyethersulfone,PES)、聚原冰烯(polynorbornene,PNB)、聚醚酰亚胺(polyetherimide,PEI)、聚苯并咪唑(poly(p-phenylenebenzobisimidazole),PBI)、聚苯并恶唑(poly(p-phenylenebenzobisoxazole),PBO)、聚对苯二甲酰对苯二胺(poly(p-phenyleneterephthalamide),PPTA)或上述组合。
本发明的另一态样提供一种有源元件基板的制作方法,包含下列步骤(应了解到,在本实施方式中所提及的步骤,除特别叙明其顺序的之外,均可依实际需要调整其前后顺序,甚至可同时或部分同时执行):提供载板;形成有机离型层于载板上;形成无机离型层于有机离型层上,其中无机离型层的材质为金属、金属氧化物或上述组合;形成可挠性基板于无机离型层上,其中可挠性基板与无机离型层邻接的一面为平坦表面;以及形成至少一有源元件于可挠性基板上。
在一个或多个实施方式中,上述的制作方法还包含切割可挠性基板与无机离型层,以形成包含无机离型层、可挠性基板与有源元件的叠层结构;以及分开无机离型层与有机离型层。
在一个或多个实施方式中,上述的制作方法还包含切割有机离型层。
在一个或多个实施方式中,有机离型层的形成方法为物理气相沉积法、化学气相沉积法、旋转涂布法、网版印刷法或喷墨涂布法。有机离型层的材质为聚对二甲苯(Parylene)、硅烷(Silane)、硅氧烷(Siloxane)、硅氟烷(FAS)或上述组合,无机离型层的形成方法为物理气相沉积法、化学气相沉积法或溅镀法,上述的制作方法还包含在形成无机离型层前,对有机离型层进行加热退火。
本发明的再一态样提供一种显示器的制作方法,包含上述的有源元件基板的制作方法,以及形成至少一显示元件于至少一有源元件上。
在一个或多个实施方式中,于形成显示元件于有源元件上的步骤前或形成显示元件于有源元件上的步骤后,还包含切割可挠性基板与无机离型层以分开有机离型层与无机离型层。
上述的有源元件基板在制作时,因其可挠性基板与载板之间具有无机离型层与有机离型层,因此在有源元件基板制作完成后,利用无机离型层与有机离型层之间的弱吸附力,可使得有源元件基板更容易自载板上剥离下来,以减少有源元件受损的机率。
附图说明
图1~图7显示依照本发明一实施方式的有源元件基板的制造流程剖面图。
图8显示本发明一实施方式的显示器的剖面图。
图9显示本发明另一实施方式的显示器的剖面图。
其中,附图标记说明如下:
10:叠层结构50:切割线
100:载板200:有机离型层
300:无机离型层400:可挠性基板
410:第一表面420:第二表面
450:缓冲层500:有源元件阵列
502、702:有源元件520、740:栅极
530、730:栅介电层540、720:沟道层
550、750:源极560、760:漏极
570、770:保护层572、772:连接孔
600:显示元件610:第一电极
620:像素定义层622:像素开口
630:发光层640:第二电极
732:第一开口734:第二开口
具体实施方式
以下将以附图公开本发明的多个实施方式,为明确说明起见,许多实务上的细节将在以下叙述中一并说明。然而,应了解到,这些实务上的细节不应用以限制本发明。也就是说,在本发明部分实施方式中,这些实务上的细节是非必要的。此外,为简化附图起见,一些习知惯用的结构与元件在附图中将以简单示意的方式显示。
图1~图7显示依照本发明一实施方式的有源元件基板的制造流程剖面图。请先参照图1。如图所示,制造者可先提供载板100。本实施方式的载板100可为硬质基板,如玻璃、石英或硅基板。
接着请参照图2。此时制造者可先于载板100上形成有机离型层200。制造者可选择将有机离型层200全面形成覆盖于载板100上。或者,制造者也可依有源元件基板的尺寸,选择形成于载板100上的有机离型层200的大小。基本上,只要能够将有源元件基板制作于有机离型层200的上方,皆在本发明的范畴内。此外,在形成有机离型层200后,制造者可选择对有机离型层200进行加热退火以去除杂质,然本发明不以此为限。
上述的有机离型层200的材质可为聚对二甲苯(Parylene)、硅烷(Silane)、硅氧烷(Siloxane)、硅氟烷(FAS)或上述组合,而有机离型层200的形成方法可为物理气相沉积法、化学气相沉积法、旋转涂布法、网版印刷法或喷墨涂布法。
接着请参照图3。此时制造者可形成无机离型层300于有机离型层200上,例如将无机离型层300全面包覆有机离型层200,然而此并不限制本发明。在部分实施方式中,所形成的无机离型层300也可仅覆盖部分的有机离型层200。基本上,只要制造者后续能够将有源元件制作于无机离型层300与有机离型层200的上方,皆在本发明的范畴内。无机离型层300的形成方法可为物理气相沉积法(例如:溅镀法)或化学气相沉积法。
接着请参照图4。此时制造者可于无机离型层300上形成可挠性基板400。制造者可选择将可挠性基板400全面形成于有机离型层200与无机离型层300上,使得有机离型层200与无机离型层300皆被包覆于可挠性基板400与载板100之间,如图4所显示。亦或者制造者可将可挠性基板400仅形成于部分的无机离型层300上。基本上,只要制造者后续能够将有源元件制作于可挠性基板400、无机离型层300与有机离型层200的上方,皆在本发明的范畴内。
上述的可挠性基板400的材质举例为聚酰亚胺(polyimide,PI)、聚碳酸酯(polycarbonate,PC)、聚醚砜(polyethersulfone,PES)、聚原冰烯(polynorbornene,PNB)、聚醚酰亚胺(polyetherimide,PEI)、聚苯并咪唑(poly(p-phenylenebenzobisimidazole),PBI)、聚苯并恶唑(poly(p-phenylenebenzobisoxazole),PBO)、聚对苯二甲酰对苯二胺(poly(p-phenyleneterephthalamide),PPTA)或上述组合。而可挠性基板400的形成方法可为旋涂法(SpinCoating)、狭缝模具式涂布法(slot-diecoating)或压合法(lamination)。
接着请参照图5。制造者可接着形成至少一有源元件于可挠性基板400上。有源元件例如可为薄膜晶体管(Thin-FilmTransistor),且若本实施方式的有源元件基板应用于显示器,则有源元件也可为多个,例如形成有源元件阵列500于可挠性基板400上,以对应显示器中的多个像素单元。这些有源元件用以分别作为各个像素单元的开关元件。而在图5的工艺之后,无机离型层300、可挠性基板400与有源元件阵列500将构成有源元件基板。
接着请参照图6。制造者此时可进行切割步骤,以定义并切齐有源元件基板的边界。详细而言,制造者可沿着切割线50,至少切割可挠性基板400与无机离型层300,以定义包含无机离型层300、可挠性基板400与有源元件阵列500的叠层结构10,此叠层结构10即为有源元件基板。而上述的切割方式可为激光切割或机械切割。
应注意的是,虽然上述的切割步骤仅切割至无机离型层300,然而在一或多个实施方式中,当进行切割步骤时,为了方便起见,有机离型层200也可一并进行切割。另外虽然在图6中的有源元件阵列500并未被切割,然而制造者也可依实际情况选择是否一并切割有源元件阵列500,本发明不以此为限。
接着请参照图7。制造者此时可分开有机离型层200与无机离型层300,使得叠层结构10自有机离型层200上剥离下来。详细而言,载板100与有机离型层200之间、有机离型层200与无机离型层300之间,以及无机离型层300与可挠性基板400之间皆具有不同的吸引力,这些吸引力使得上述各层之间能够结合在一起。然而,因有机离型层200与无机离型层300之间的吸引力,较载板100与有机离型层200之间的吸引力,以及无机离型层300与可挠性基板400之间的吸引力皆来得小,使得当制造者剥离载板100上的结构时,有机离型层200与无机离型层300之间会首先分开,也因此叠层结构10得以自载板100剥离。另一方面,在完成剥离工艺后,有机离型层200仍附着于载板100上,而切割工艺在有机离型层200所形成的切割痕迹在图7中以虚线表示。
因有机离型层200与无机离型层300之间的弱吸引力,制造者不需花费太大的力气即可施行剥离工艺,也因此本实施方式的有源元件基板的制作方法,在剥离过程中,能够减少对位于无机离型层300上方的有源元件阵列500的损害。
因此,在图7的工艺完成后,本实施方式的有源元件基板(即叠层结构10)包含无机离型层300、可挠性基板400与有源元件阵列500。可挠性基板400具有相对的第一表面410与第二表面420,其中第一表面410为平坦表面。无机离型层300全面覆盖可挠性基板400的第一表面410,而有源元件阵列500则位于可挠性基板400的第二表面420上方。
在本实施方式中,无机离型层300的材质可为金属、金属氧化物或上述组合。因有机离型层200与有源元件基板10的无机离型层300的材质差异性较大,因此有机离型层200与无机离型层300之间的吸引力十分微弱,让制造者在工艺完成后可轻易地分开两者。
详细而言,在一或多个实施方式中,无机离型层300的材质可为金属,例如金(Au)、银(Ag)、铂(Pt)、铜(Cu)、钛(Ti)、铝(Al)、铬(Cr)、铅(Pd)、铑(Rh)、钼(Mo)、钨(W)、锌(Zn)、锡(Sn)或上述组合。无机离型层300的分子间的吸引力主要是金属键,而有机离型层200的分子间的吸引力主要是凡德瓦尔力(VanderWaals’forces),这两种不同型态的力会让无机离型层300与有机离型层200之间的吸引力十分微弱,因此制造者在工艺完成后可以很轻易地将两者分开。当无机离型层300的材质为金属时,无机离型层300的厚度可为约0.001至1微米。此外,若要无机离型层300呈现透明状,无机离型层300的厚度可为约0.001至0.02微米。
在一或多个实施方式中,无机离型层300的材质也可为金属氧化物,例如:In2O3、SnO2、ZnO、CdO、TiN、In2O3:Sn(ITO)、ZnO:In(IZO)、ZnO:Ga(GZO)、ZnO:Al(AZO)、SnO2:F、TiO2:Ta、CdIn2O4、Cd2SnO4、Zn2SnO4或上述组合。当无机离型层300的材质为金属氧化物时,无机离型层300的厚度可为约0.001至1微米。
接下来对本实施方式的显示器的细节作详细说明。请参照图8,其显示本发明一实施方式的显示器的剖面图。在本实施方式中,有源元件502为底栅(bottomgate)型薄膜晶体管。有源元件502包含栅极520、栅介电层530、沟道层540、源极550与漏极560。栅极520置于可挠性基板400上方。沟道层540位于栅极520上方。栅介电层530介于沟道层540与栅极520之间。源极550与漏极560置于沟道层540上,并分别电性连接沟道层540。
详细而言,栅极520的材质可包含钛、钼、铬、铱、铝、铜、银、金、锌、铟、镓等上述的组合或合金。制造者例如可先形成第一导电层,随之以光刻工艺图案化此第一导电层,藉此在可挠性基板400上形成栅极520。第一导电层的形成方法可为物理气相沉积法,如溅镀法,或是化学气相沉积法,而图案化第一导电层的方法则可为光刻法、网版印刷法、喷墨法或激光剥除法。
栅介电层530的材质可包含氮化硅、氧化硅、氮氧化硅或上述组合。而栅介电层530的形成方式可为例如化学气相沉积法。
沟道层540的材质可包含非晶硅、多晶硅、微晶硅、单晶硅、有机半导体(organicsemiconductor)、氧化物半导体(oxidesemiconductor)或上述组合。制造者例如可先形成半导体层,随之以光刻工艺图案化此半导体层,藉此在栅介电层530上形成沟道层540。半导体层的形成方法可为物理气相沉积法,如溅镀法,或是化学气相沉积法,而图案化半导体层的方法则可为光刻法、网版印刷法、喷墨法或激光剥除法。
源极550与漏极560的材质可包含钛、钼、铬、铱、铝、铜、银、金、锌、铟、镓等上述组合或合金。制造者例如可先形成第二导电层,此第二导电层全面覆盖沟道层540与栅介电层530。接着,制造者可图案化此第二导电层,藉此于沟道层540的两侧分别形成源极550与漏极560。第二导电层的形成方法可为物理气相沉积法,如溅镀法,或是化学气相沉积法。而图案化第二导电层的方法则可为光刻法、网版印刷法、喷墨法或激光剥除法。
而在一或多个实施方式中,可挠性基板400与有源元件502之间也可形成缓冲层450。缓冲层450可完全覆盖可挠性基板400,使可挠性基板400免于受后续工艺的破坏。缓冲层450的材质可为氮化硅,而缓冲层450的形成方法可为物理气相沉积法,如溅镀法或是化学气相沉积法。
另外,有源元件502可还包含保护层570。保护层570覆盖栅介电层530、沟道层540、源极550与漏极560。而为了使有源元件502与其他元件电性连接,保护层570可具有连接孔572,以暴露出漏极560。在本实施方式中,保护层570的材质可包含氮化硅、氧化硅、氮氧化硅或上述组合。保护层570的形成方式可为例如旋涂法,而形成连接孔572的方法可为光刻蚀刻法(lithographyandetching)。
有源元件502可作为显示器的像素的开关元件。以液晶显示器而言,有源元件502的漏极560可电性连接一像素电极,用以改变液晶分子的指向。以电激发光显示器而言,有源元件502的漏极560可电性连接电激发光元件(如发光二极管或有机发光二极管)的一电极,以提供电激发光元件的驱动电压。以电湿润显示器而言,有源元件502的漏极560可电性连接一像素电极,以改变其极性分子的位置。而以电泳显示器而言,有源元件502的漏极560可电性连接一像素电极,用以改变其微胶囊中的彩色粒子的位置。
因此,为了方便起见,在完成有源元件502的工艺后,制造者可选择继续制作显示器的显示元件600。显示元件600包含第一电极610、像素定义层620、发光层630与第二电极640。第一电极610置于有源元件502上方,且与有源元件502的漏极560电性连接。像素定义层620覆盖第一电极610与有源元件502。像素定义层620具有像素开口622,以暴露出部分的第一电极610。发光层630置于第一电极610上,且位于像素开口622内。第二电极640覆盖发光层630以及像素定义层620。
详细而言,第一电极610的材质可包含铟锡氧化物、铟锌氧化物、铝锌氧化物或上述组合。制造者例如可先在有源元件502上形成第三导电层,此第三导电层全面覆盖有源元件502。接着,制造者可图案化此第三导电层,藉此形成第一电极610。在本实施方式中,第三导电层的形成方法可为物理气相沉积法,如溅镀法或是化学气相沉积法,而图案化第三导电层的方式可为例如光刻法。
在本实施方式中,像素定义层620的材质可包含有机材料、无机材料或上述组合。而像素定义层620的形成方法例如为旋涂法,且形成像素开口622的方法可为光刻法。
在一或多个实施方式中,发光层630的结构由第一电极610的一端依序可为空穴传输层、有机发光材料层与电子传输层,然而本发明并不以上述所形成的结构为限。
第二电极640的材质可包含铟锡氧化物、铟锌氧化物、铝锌氧化物或上述组合。而第二电极640的形成方法可为物理气相沉积法,如溅镀法或是化学气相沉积法。
然而上述的有源元件502的种类并非用以限制本发明,在一或多个实施方式中,有源元件可为顶栅(topgate)型薄膜晶体管。请参照图9,其显示本发明另一实施方式的显示器的剖面图。有源元件702包含沟道层720、栅介电层730、栅极740、源极750与漏极760。沟道层720置于可挠性基板400上方。栅介电层730覆盖沟道层720。栅介电层730具有第一开口732与第二开口734,以分别暴露出部分的沟道层720。栅极740置于栅介电层730上,使得栅介电层730介于沟道层720与栅极740之间。源极750与漏极760置于栅介电层730上,并分别透过第一开口732与第二开口734而电性接触沟道层720。
有源元件702也可作为显示器的像素单元的开关元件。即有源元件702的上方可再制作显示元件600。至于其他的细节因与图8的实施方式相同,因此便不再赘述。
在一或多个实施方式中,切割步骤可在完成显示元件600后进行。详细而言,制作者在完成图4的工艺后,接着可将图8或图9的有源元件502或702以及显示元件600依序制作于可挠性基板400上。如图6所示,在完成显示元件600后,即可进行切割步骤,其中切割步骤包含切割可挠性基板400与无机离型层300,以定义出叠层结构10的边界。因此在本实施方式中,叠层结构10即包含无机离型层300、可挠性基板400、有源元件502(或702)与显示元件600。而在进行切割步骤后,藉由分开无机离型层300与有机离型层200,叠层结构10即可自载板100上剥离下来,以完成显示器的工艺。
然而在其他的实施方式中,切割步骤也可于有源元件基板形成后以及显示元件600(如图8与图9所显示)形成前进行,即在完成有源元件基板后便进行切割步骤。详细而言,制作者在完成图4的工艺后,接着可将图8或图9的有源元件502或702制作于可挠性基板400上。的后进行切割步骤,如图6所示。制作者接着形成显示元件600于有源元件502或702上。而在完成显示元件600后,制作者可分开无机离型层300与有机离型层200,以完成显示器的工艺。
虽然本发明已以实施方式公开如上,然其并非用以限定本发明,任何本领域技术人员,在不脱离本发明的精神和范围内,当可作各种的更动与润饰,因此本发明的保护范围当视所附的权利要求所界定的范围为准。
Claims (10)
1.一种有源元件基板,包含:
一可挠性基板,具有相对的一第一表面与一第二表面,其中该第一表面为一平坦表面;
一无机离型层,覆盖该可挠性基板的该第一表面,其中该无机离型层的材质为金属、金属氧化物或上述组合;
至少一有源元件,位于该可挠性基板的该第二表面上;
一保护层,覆盖该至少一有源元件;
一第一电极,置于该有源元件上方,且与该有源元件的漏极电性连接;
一像素定义层,覆盖该第一电极和该有源元件,且该像素定义层具有像素开口,以暴露出部分的第一电极;
一发光层,置于该第一电极上,且位于该像素开口内;以及
一第二电极,覆盖该发光层以及该像素定义层。
2.如权利要求1所述的有源元件基板,其中该无机离型层为透明状,且该无机离型层的厚度为0.001至0.02微米。
3.如权利要求1所述的有源元件基板,其中该无机离型层的厚度为0.001至1微米,其中该无机离型层的材质为金(Au)、银(Ag)、铂(Pt)、铜(Cu)、铬(Cr)、铅(Pd)、铑(Rh)、钼(Mo)、钨(W)、锌(Zn)或上述组合,In2O3、ZnO、CdO、ZnO:In(IZO)、ZnO:Ga(GZO)、ZnO:Al(AZO)、TiO2:Ta、CdIn2O4、Cd2SnO4、Zn2SnO4或上述组合。
4.如权利要求1所述的有源元件基板,其中该可挠性基板的材质为聚酰亚胺(polyimide,PI)、聚碳酸酯(polycarbonate,PC)、聚醚砜(polyethersulfone,PES)、聚原冰烯(polynorbornene,PNB)、聚醚酰亚胺(polyetherimide,PEI)、聚苯并咪唑(poly(p-phenylenebenzobisimidazole),PBI)、聚苯并恶唑(poly(p-phenylenebenzobisoxazole),PBO)、聚对苯二甲酰对苯二胺(poly(p-phenyleneterephthalamide),PPTA)或上述组合,其中该无机离型层全面覆盖该可挠性基板的该第一表面。
5.一种有源元件基板的制作方法,包含:
提供一载板;
形成一有机离型层于该载板上;
形成一无机离型层于该有机离型层上,其中该无机离型层的材质为金属、金属氧化物或上述组合;
形成一可挠性基板于该无机离型层上,其中该可挠性基板与该无机离型层邻接的一面为一平坦表面;以及
形成至少一有源元件于该可挠性基板上。
6.如权利要求5所述的制作方法,还包含:
切割该可挠性基板与该无机离型层,以形成包含该无机离型层、该可挠性基板与该有源元件的一叠层结构;以及
分开该有机离型层与该无机离型层。
7.如权利要求6所述的制作方法,还包含:
切割该有机离型层。
8.如权利要求5所述的制作方法,其中该有机离型层的形成方法为物理气相沉积法、化学气相沉积法、旋转涂布法、网版印刷法或喷墨涂布法,其中该有机离型层的材质为聚对二甲苯(Parylene)、硅烷(Silane)、硅氧烷(Siloxane)、硅氟烷(FAS)或上述组合,其中该无机离型层的形成方法为物理气相沉积法、化学气相沉积法或溅镀法,该制作方法还包含:
在形成该无机离型层前,对该有机离型层进行加热退火。
9.一种显示器的制作方法,包含:
如权利要求5所述的有源元件基板的制作方法;以及
形成至少一显示元件于该至少一有源元件上。
10.如权利要求9所述的制作方法,其中于形成该至少一显示元件于该至少一有源元件上的步骤前或形成该至少一显示元件于该至少一有源元件上的步骤后,还包含切割该可挠性基板与该无机离型层以分开该有机离型层与该无机离型层。
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