CN103247603B - 半导体装置、制造半导体装置的方法以及电子设备 - Google Patents

半导体装置、制造半导体装置的方法以及电子设备 Download PDF

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Publication number
CN103247603B
CN103247603B CN201310049242.5A CN201310049242A CN103247603B CN 103247603 B CN103247603 B CN 103247603B CN 201310049242 A CN201310049242 A CN 201310049242A CN 103247603 B CN103247603 B CN 103247603B
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interlayer insulating
film
semiconductor device
bonding
semiconductor substrate
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CN103247603A (zh
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萩本贤哉
藤井宣年
青柳健
青柳健一
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Sony Corp
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Sony Corp
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CN201310049242.5A 2012-02-14 2013-02-07 半导体装置、制造半导体装置的方法以及电子设备 Expired - Fee Related CN103247603B (zh)

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JP2012-029429 2012-02-14
JP2012029429A JP5994274B2 (ja) 2012-02-14 2012-02-14 半導体装置、半導体装置の製造方法、及び、電子機器

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US8735219B2 (en) * 2012-08-30 2014-05-27 Ziptronix, Inc. Heterogeneous annealing method and device
JP6313189B2 (ja) * 2014-11-04 2018-04-18 東芝メモリ株式会社 半導体装置の製造方法
JP6335099B2 (ja) * 2014-11-04 2018-05-30 東芝メモリ株式会社 半導体装置および半導体装置の製造方法
JP6465665B2 (ja) * 2015-01-22 2019-02-06 日本放送協会 固体撮像素子およびその製造方法
WO2016140072A1 (ja) * 2015-03-03 2016-09-09 ソニー株式会社 半導体装置、および電子機器
JP2016174016A (ja) * 2015-03-16 2016-09-29 株式会社東芝 半導体装置および半導体装置の製造方法
JP2016181531A (ja) * 2015-03-23 2016-10-13 ソニー株式会社 半導体装置、および半導体装置の製造方法、固体撮像素子、撮像装置、並びに電子機器
JP2016219660A (ja) * 2015-05-22 2016-12-22 ソニー株式会社 半導体装置、製造方法、固体撮像素子、および電子機器
US10204893B2 (en) 2016-05-19 2019-02-12 Invensas Bonding Technologies, Inc. Stacked dies and methods for forming bonded structures
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JP6856983B2 (ja) * 2016-06-30 2021-04-14 キヤノン株式会社 光電変換装置及びカメラ
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JP2019054153A (ja) * 2017-09-15 2019-04-04 東芝メモリ株式会社 半導体装置の製造方法
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