CN103214972A - 用于使表面平坦化的组合物及方法 - Google Patents

用于使表面平坦化的组合物及方法 Download PDF

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Publication number
CN103214972A
CN103214972A CN2013100999317A CN201310099931A CN103214972A CN 103214972 A CN103214972 A CN 103214972A CN 2013100999317 A CN2013100999317 A CN 2013100999317A CN 201310099931 A CN201310099931 A CN 201310099931A CN 103214972 A CN103214972 A CN 103214972A
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CN
China
Prior art keywords
acid
polishing composition
aluminium oxide
oxide particle
substrate
Prior art date
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Pending
Application number
CN2013100999317A
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English (en)
Chinese (zh)
Inventor
王育群
贾森.阿吉奥
陆斌
约翰.帕克
周仁杰
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Cabot Corp
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Cabot Corp
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Filing date
Publication date
Application filed by Cabot Corp filed Critical Cabot Corp
Publication of CN103214972A publication Critical patent/CN103214972A/zh
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Preventing Corrosion Or Incrustation Of Metals (AREA)
CN2013100999317A 2005-09-30 2006-09-21 用于使表面平坦化的组合物及方法 Pending CN103214972A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/241,137 US7955519B2 (en) 2005-09-30 2005-09-30 Composition and method for planarizing surfaces
US11/241,137 2005-09-30

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CNA2006800396642A Division CN101297009A (zh) 2005-09-30 2006-09-21 用于使表面平坦化的组合物及方法

Publications (1)

Publication Number Publication Date
CN103214972A true CN103214972A (zh) 2013-07-24

Family

ID=37499360

Family Applications (2)

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CN2013100999317A Pending CN103214972A (zh) 2005-09-30 2006-09-21 用于使表面平坦化的组合物及方法
CNA2006800396642A Pending CN101297009A (zh) 2005-09-30 2006-09-21 用于使表面平坦化的组合物及方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
CNA2006800396642A Pending CN101297009A (zh) 2005-09-30 2006-09-21 用于使表面平坦化的组合物及方法

Country Status (10)

Country Link
US (1) US7955519B2 (enExample)
EP (1) EP1928964B1 (enExample)
JP (1) JP5188976B2 (enExample)
KR (1) KR101281932B1 (enExample)
CN (2) CN103214972A (enExample)
IL (1) IL190428A (enExample)
MY (1) MY148917A (enExample)
SG (1) SG166114A1 (enExample)
TW (1) TWI326705B (enExample)
WO (1) WO2007041004A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN118064060A (zh) * 2024-02-21 2024-05-24 中国机械总院集团海西(福建)分院有限公司 一种bak-4光学棱镜精抛用高分散性抛光液及其制备方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5273710B2 (ja) * 2007-11-27 2013-08-28 メック株式会社 エッチング剤
SG11201602877RA (en) * 2013-10-18 2016-05-30 Cabot Microelectronics Corp Polishing composition and method for nickel-phosphorous coated memory disks
CN110256968B (zh) * 2019-05-29 2021-01-01 湖南皓志科技股份有限公司 一种用于铜抛光的氧化铝抛光液及其制备方法

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US20030006396A1 (en) 1999-12-14 2003-01-09 Hongyu Wang Polishing composition for CMP having abrasive particles
WO2001044396A1 (en) 1999-12-14 2001-06-21 Rodel Holdings, Inc. Polishing compositions for noble metals
JP3602393B2 (ja) 1999-12-28 2004-12-15 Ｎｅｃエレクトロニクス株式会社 化学的機械的研磨用スラリー
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JP3768402B2 (ja) * 2000-11-24 2006-04-19 Ｎｅｃエレクトロニクス株式会社 化学的機械的研磨用スラリー
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SG144688A1 (en) 2001-07-23 2008-08-28 Fujimi Inc Polishing composition and polishing method employing it
US6821897B2 (en) 2001-12-05 2004-11-23 Cabot Microelectronics Corporation Method for copper CMP using polymeric complexing agents
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FR2839125B1 (fr) * 2002-04-30 2005-02-18 France Reducteurs Sa Mecanisme d'embrayage a cones
US6936543B2 (en) 2002-06-07 2005-08-30 Cabot Microelectronics Corporation CMP method utilizing amphiphilic nonionic surfactants
KR20050057209A (ko) * 2002-09-25 2005-06-16 세이미 케미칼 가부시끼가이샤 연마제 조성물, 그 제조 방법 및 연마 방법
JP2004193495A (ja) 2002-12-13 2004-07-08 Toshiba Corp 化学的機械的研磨用スラリーおよびこれを用いた半導体装置の製造方法
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US7497938B2 (en) * 2005-03-22 2009-03-03 Cabot Microelectronics Corporation Tribo-chronoamperometry as a tool for CMP application
US7311856B2 (en) * 2005-03-30 2007-12-25 Cabot Microelectronics Corporation Polymeric inhibitors for enhanced planarization

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN118064060A (zh) * 2024-02-21 2024-05-24 中国机械总院集团海西(福建)分院有限公司 一种bak-4光学棱镜精抛用高分散性抛光液及其制备方法

Also Published As

Publication number Publication date
US20070075040A1 (en) 2007-04-05
SG166114A1 (en) 2010-11-29
US7955519B2 (en) 2011-06-07
TW200722510A (en) 2007-06-16
CN101297009A (zh) 2008-10-29
KR101281932B1 (ko) 2013-07-03
JP5188976B2 (ja) 2013-04-24
KR20080061386A (ko) 2008-07-02
JP2009510779A (ja) 2009-03-12
EP1928964B1 (en) 2016-12-21
IL190428A0 (en) 2008-11-03
WO2007041004A3 (en) 2007-06-21
TWI326705B (en) 2010-07-01
IL190428A (en) 2012-04-30
EP1928964A2 (en) 2008-06-11
WO2007041004A2 (en) 2007-04-12
MY148917A (en) 2013-06-14

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Application publication date: 20130724