CN103213935B - 二维器件阵列 - Google Patents

二维器件阵列 Download PDF

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Publication number
CN103213935B
CN103213935B CN201310075846.7A CN201310075846A CN103213935B CN 103213935 B CN103213935 B CN 103213935B CN 201310075846 A CN201310075846 A CN 201310075846A CN 103213935 B CN103213935 B CN 103213935B
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Prior art keywords
substrate
stretchable
interconnection
device array
strain
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Chinese (zh)
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CN103213935A (zh
Inventor
J·A·罗杰斯
M·梅尔特
孙玉刚
高興助
A·卡尔森
W·M·崔
M·斯托伊克维奇
H·江
Y·黄
R·G·诺奥
李建宰
姜晟俊
朱正涛
E·梅纳德
安钟贤
H-S·金
姜达荣
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University of Illinois System
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University of Illinois System
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
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    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
    • B81B3/0067—Mechanical properties
    • B81B3/0078—Constitution or structural means for improving mechanical properties not provided for in B81B3/007 - B81B3/0075
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
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    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
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    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
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    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
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  • Engineering & Computer Science (AREA)
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  • Led Device Packages (AREA)
  • Thin Film Transistor (AREA)
  • Micromachines (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Optical Integrated Circuits (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Light Receiving Elements (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Pressure Sensors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Mechanical Light Control Or Optical Switches (AREA)
  • Recrystallisation Techniques (AREA)
  • Structure Of Printed Boards (AREA)
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