CN103208461A - 半导体器件及半导体器件的制造方法 - Google Patents
半导体器件及半导体器件的制造方法 Download PDFInfo
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- CN103208461A CN103208461A CN2013100170046A CN201310017004A CN103208461A CN 103208461 A CN103208461 A CN 103208461A CN 2013100170046 A CN2013100170046 A CN 2013100170046A CN 201310017004 A CN201310017004 A CN 201310017004A CN 103208461 A CN103208461 A CN 103208461A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 45
- 238000000034 method Methods 0.000 title claims description 29
- 229910052751 metal Inorganic materials 0.000 claims abstract description 135
- 239000002184 metal Substances 0.000 claims abstract description 135
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 239000013078 crystal Substances 0.000 claims description 33
- 238000004519 manufacturing process Methods 0.000 claims description 16
- 238000005530 etching Methods 0.000 claims description 12
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- 230000004888 barrier function Effects 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 2
- 230000001681 protective effect Effects 0.000 claims description 2
- 238000009713 electroplating Methods 0.000 claims 2
- 239000000463 material Substances 0.000 claims 1
- 238000007747 plating Methods 0.000 claims 1
- 238000009413 insulation Methods 0.000 abstract description 8
- 208000037656 Respiratory Sounds Diseases 0.000 description 53
- 239000010949 copper Substances 0.000 description 11
- 239000011347 resin Substances 0.000 description 11
- 229920005989 resin Polymers 0.000 description 11
- 238000000465 moulding Methods 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 8
- 229910052814 silicon oxide Inorganic materials 0.000 description 8
- 229910010271 silicon carbide Inorganic materials 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000004642 Polyimide Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910007637 SnAg Inorganic materials 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000005380 borophosphosilicate glass Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 230000001902 propagating effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical group [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 206010011376 Crepitations Diseases 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/562—Protection against mechanical damage
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76885—By forming conductive members before deposition of protective insulating material, e.g. pillars, studs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/564—Details not otherwise provided for, e.g. protection against moisture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/585—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries comprising conductive layers or plates or strips or rods or rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3043—Making grooves, e.g. cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Dicing (AREA)
Abstract
Description
Claims (9)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012-006752 | 2012-01-17 | ||
JP2012006752A JP5834934B2 (ja) | 2012-01-17 | 2012-01-17 | 半導体装置及び半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103208461A true CN103208461A (zh) | 2013-07-17 |
CN103208461B CN103208461B (zh) | 2016-05-11 |
Family
ID=48755640
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201310017004.6A Active CN103208461B (zh) | 2012-01-17 | 2013-01-17 | 半导体器件及半导体器件的制造方法 |
Country Status (3)
Country | Link |
---|---|
US (2) | US8970007B2 (zh) |
JP (1) | JP5834934B2 (zh) |
CN (1) | CN103208461B (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106847775A (zh) * | 2017-02-08 | 2017-06-13 | 通富微电子股份有限公司 | 半导体封装器件、电子设备及半导体封装器件的制备方法 |
CN108140576A (zh) * | 2015-10-01 | 2018-06-08 | 瑞萨电子株式会社 | 半导体器件及其制造方法 |
CN109445245A (zh) * | 2018-10-15 | 2019-03-08 | 上海华虹宏力半导体制造有限公司 | 一种掩模板、晶圆、晶粒以及等离子刻蚀裂片的方法 |
CN109755214A (zh) * | 2017-07-26 | 2019-05-14 | 三星电子株式会社 | 半导体器件 |
CN110767664A (zh) * | 2019-10-31 | 2020-02-07 | 京东方科技集团股份有限公司 | 一种显示基板及其制作方法、显示装置 |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8951842B2 (en) * | 2012-01-12 | 2015-02-10 | Micron Technology, Inc. | Semiconductor growth substrates and associated systems and methods for die singulation |
US9230921B2 (en) * | 2013-10-08 | 2016-01-05 | Globalfoundries Inc. | Self-healing crack stop structure |
JP6344991B2 (ja) * | 2014-06-17 | 2018-06-20 | キヤノン株式会社 | 撮像装置の製造方法 |
US9620460B2 (en) * | 2014-07-02 | 2017-04-11 | Samsung Electronics Co., Ltd. | Semiconductor chip, semiconductor package and fabricating method thereof |
KR102318172B1 (ko) * | 2014-07-02 | 2021-10-27 | 삼성전자주식회사 | 반도체 칩, 패키지 및 그 제조 방법 |
JP6503286B2 (ja) * | 2015-12-24 | 2019-04-17 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法および半導体ウェハ |
US9837366B1 (en) * | 2016-11-28 | 2017-12-05 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semicondcutor structure and semiconductor manufacturing process thereof |
JP7240149B2 (ja) * | 2018-08-29 | 2023-03-15 | キオクシア株式会社 | 半導体装置 |
CN113130413B (zh) | 2019-12-30 | 2024-09-06 | 联华电子股份有限公司 | 半导体元件封装结构及其制造方法 |
US11764164B2 (en) * | 2020-06-15 | 2023-09-19 | Micron Technology, Inc. | Semiconductor device and method of forming the same |
US11715704B2 (en) | 2021-04-14 | 2023-08-01 | Micron Technology, Inc. | Scribe structure for memory device |
US11769736B2 (en) | 2021-04-14 | 2023-09-26 | Micron Technology, Inc. | Scribe structure for memory device |
US11600578B2 (en) | 2021-04-22 | 2023-03-07 | Micron Technology, Inc. | Scribe structure for memory device |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007115988A (ja) * | 2005-10-21 | 2007-05-10 | Renesas Technology Corp | 半導体装置 |
US20090203192A1 (en) * | 2008-02-13 | 2009-08-13 | Erdem Kaltalioglu | Crack Stop Trenches |
US20100200960A1 (en) * | 2009-02-12 | 2010-08-12 | International Business Machines Corporation | Deep trench crackstops under contacts |
US20110156263A1 (en) * | 2009-12-24 | 2011-06-30 | Elpida Memory, Inc. | Semiconductor device |
CN102201394A (zh) * | 2010-03-24 | 2011-09-28 | 富士通半导体股份有限公司 | 半导体晶片及其制造方法、以及半导体芯片 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4250006B2 (ja) * | 2002-06-06 | 2009-04-08 | 富士通マイクロエレクトロニクス株式会社 | 半導体装置及びその製造方法 |
JP4088120B2 (ja) | 2002-08-12 | 2008-05-21 | 株式会社ルネサステクノロジ | 半導体装置 |
CN1617312A (zh) * | 2003-11-10 | 2005-05-18 | 松下电器产业株式会社 | 半导体器件及其制造方法 |
JP4636839B2 (ja) * | 2004-09-24 | 2011-02-23 | パナソニック株式会社 | 電子デバイス |
JP2009021528A (ja) | 2007-07-13 | 2009-01-29 | Toshiba Corp | 半導体装置 |
US8912076B2 (en) * | 2008-11-05 | 2014-12-16 | Texas Instruments Incorporated | Crack deflector structure for improving semiconductor device robustness against saw-induced damage |
US8022509B2 (en) | 2008-11-28 | 2011-09-20 | United Microelectronics Corp. | Crack stopping structure and method for fabricating the same |
JP5439901B2 (ja) | 2009-03-31 | 2014-03-12 | 富士通セミコンダクター株式会社 | 半導体装置及びその製造方法 |
-
2012
- 2012-01-17 JP JP2012006752A patent/JP5834934B2/ja not_active Expired - Fee Related
-
2013
- 2013-01-08 US US13/736,385 patent/US8970007B2/en active Active
- 2013-01-17 CN CN201310017004.6A patent/CN103208461B/zh active Active
-
2015
- 2015-01-29 US US14/609,004 patent/US9240386B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007115988A (ja) * | 2005-10-21 | 2007-05-10 | Renesas Technology Corp | 半導体装置 |
US20090203192A1 (en) * | 2008-02-13 | 2009-08-13 | Erdem Kaltalioglu | Crack Stop Trenches |
US20100200960A1 (en) * | 2009-02-12 | 2010-08-12 | International Business Machines Corporation | Deep trench crackstops under contacts |
US20110156263A1 (en) * | 2009-12-24 | 2011-06-30 | Elpida Memory, Inc. | Semiconductor device |
CN102201394A (zh) * | 2010-03-24 | 2011-09-28 | 富士通半导体股份有限公司 | 半导体晶片及其制造方法、以及半导体芯片 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108140576A (zh) * | 2015-10-01 | 2018-06-08 | 瑞萨电子株式会社 | 半导体器件及其制造方法 |
CN106847775A (zh) * | 2017-02-08 | 2017-06-13 | 通富微电子股份有限公司 | 半导体封装器件、电子设备及半导体封装器件的制备方法 |
CN109755214A (zh) * | 2017-07-26 | 2019-05-14 | 三星电子株式会社 | 半导体器件 |
CN109755214B (zh) * | 2017-07-26 | 2023-11-21 | 三星电子株式会社 | 半导体器件 |
CN109445245A (zh) * | 2018-10-15 | 2019-03-08 | 上海华虹宏力半导体制造有限公司 | 一种掩模板、晶圆、晶粒以及等离子刻蚀裂片的方法 |
CN109445245B (zh) * | 2018-10-15 | 2022-10-18 | 上海华虹宏力半导体制造有限公司 | 一种掩模板、晶圆、晶粒以及等离子刻蚀裂片的方法 |
CN110767664A (zh) * | 2019-10-31 | 2020-02-07 | 京东方科技集团股份有限公司 | 一种显示基板及其制作方法、显示装置 |
Also Published As
Publication number | Publication date |
---|---|
US9240386B2 (en) | 2016-01-19 |
JP5834934B2 (ja) | 2015-12-24 |
US8970007B2 (en) | 2015-03-03 |
JP2013149640A (ja) | 2013-08-01 |
US20130181329A1 (en) | 2013-07-18 |
CN103208461B (zh) | 2016-05-11 |
US20150140802A1 (en) | 2015-05-21 |
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