CN103178106B - 用于异质结构的场效应晶体管的屏蔽罩 - Google Patents

用于异质结构的场效应晶体管的屏蔽罩 Download PDF

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Publication number
CN103178106B
CN103178106B CN201210552008.XA CN201210552008A CN103178106B CN 103178106 B CN103178106 B CN 103178106B CN 201210552008 A CN201210552008 A CN 201210552008A CN 103178106 B CN103178106 B CN 103178106B
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semiconductor device
film
shield
passivation film
active region
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CN103178106A (zh
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A·康迪莫夫
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Power Integrations Inc
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Power Integrations Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3135—Double encapsulation or coating and encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/112—Field plates comprising multiple field plate segments

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
CN201210552008.XA 2011-12-21 2012-12-18 用于异质结构的场效应晶体管的屏蔽罩 Active CN103178106B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/333,843 US10002957B2 (en) 2011-12-21 2011-12-21 Shield wrap for a heterostructure field effect transistor
US13/333,843 2011-12-21

Publications (2)

Publication Number Publication Date
CN103178106A CN103178106A (zh) 2013-06-26
CN103178106B true CN103178106B (zh) 2016-10-05

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Country Link
US (3) US10002957B2 (enExample)
EP (1) EP2608271B1 (enExample)
JP (1) JP6644456B2 (enExample)
CN (1) CN103178106B (enExample)
TW (1) TWI496286B (enExample)

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US10236236B2 (en) 2013-09-10 2019-03-19 Delta Electronics, Inc. Heterojunction semiconductor device for reducing parasitic capacitance
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Also Published As

Publication number Publication date
TWI496286B (zh) 2015-08-11
US20190214493A1 (en) 2019-07-11
EP2608271A1 (en) 2013-06-26
TW201342594A (zh) 2013-10-16
EP2608271B1 (en) 2016-10-19
US10199488B2 (en) 2019-02-05
US20130161692A1 (en) 2013-06-27
US10002957B2 (en) 2018-06-19
CN103178106A (zh) 2013-06-26
US20170098704A1 (en) 2017-04-06
JP2013131758A (ja) 2013-07-04
JP6644456B2 (ja) 2020-02-12

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