JP6233547B1 - 化合物半導体デバイス - Google Patents
化合物半導体デバイス Download PDFInfo
- Publication number
- JP6233547B1 JP6233547B1 JP2017521606A JP2017521606A JP6233547B1 JP 6233547 B1 JP6233547 B1 JP 6233547B1 JP 2017521606 A JP2017521606 A JP 2017521606A JP 2017521606 A JP2017521606 A JP 2017521606A JP 6233547 B1 JP6233547 B1 JP 6233547B1
- Authority
- JP
- Japan
- Prior art keywords
- passivation film
- gate electrode
- electrode
- field plate
- drain electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 37
- 150000001875 compounds Chemical class 0.000 title claims description 17
- 238000002161 passivation Methods 0.000 claims abstract description 44
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 239000002245 particle Substances 0.000 claims description 29
- 239000000463 material Substances 0.000 claims description 22
- 230000002596 correlated effect Effects 0.000 claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 239000004020 conductor Substances 0.000 claims description 3
- 230000007704 transition Effects 0.000 claims description 3
- 239000010408 film Substances 0.000 abstract description 51
- 239000010409 thin film Substances 0.000 abstract description 19
- 229910002704 AlGaN Inorganic materials 0.000 description 10
- 238000000034 method Methods 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 230000005684 electric field Effects 0.000 description 5
- 238000004549 pulsed laser deposition Methods 0.000 description 5
- 238000000231 atomic layer deposition Methods 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000006378 damage Effects 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000004050 hot filament vapor deposition Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- WEKIJJOSGXVNNE-UHFFFAOYSA-N CC[SiH2]NC Chemical compound CC[SiH2]NC WEKIJJOSGXVNNE-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- 229910008812 WSi Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- 230000000875 corresponding effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 230000000638 stimulation Effects 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/408—Electrodes ; Multistep manufacturing processes therefor with an insulating layer with a particular dielectric or electrostatic property, e.g. with static charges or for controlling trapped charges or moving ions, or with a plate acting on the insulator potential or the insulator charges, e.g. for controlling charges effect or potential distribution in the insulating layer, or with a semi-insulating layer contacting directly the semiconductor surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3192—Multilayer coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
- H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/404—Multiple field plate structures
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
Description
図1は、本発明の実施の形態1に係る化合物半導体デバイスを示す断面図である。SiC基板1上にGaNバッファ層2が形成されている。GaNバッファ層2上にAlGaNチャネル層3が形成されている。AlGaNチャネル層3上にゲート電極4、ソース電極5及びドレイン電極6が形成されている。
図3は、本発明の実施の形態2に係る化合物半導体デバイスを示す断面図である。本実施の形態では、第1のパッシベーション膜7は、準導電性薄膜8の代わりに、少なくともゲート電極4とドレイン電極6との間に形成された強相関電子系材料12を有する。強相関電子系材料12の代表例は、VO2、SrTiO3、LaVO3、SrOなどであり、銅酸化物系、Fe系、Mn系、超伝導系など多くの強相関を示す材料が報告されている。強相関電子系材料12は、通常の状態では電子で満たされているにも関わらず、電子同士の相関が強すぎるため自由に動くことができず絶縁性を示すMOTT絶縁体である。強相関電子系材料12に電圧、温度、光などの刺激を与えると導電性材料に相転移することが知られている。強相関電子系材料12はPLD法などの通常半導体プロセスで用いる手法で形成、加工することができるため、既存の半導体製造プロセスに組込むことが容易である。
図4は、本発明の実施の形態3に係る化合物半導体デバイスを示す断面図である。本実施の形態では、ソースフィールドプレート9を厚さ5μmから100μmに厚膜化している。ソースフィールドプレート9の厚さはデバイス特性の向上に無関係のため、通常は製造コストを削減するために厚さは数μm以下であり、故意に厚膜化した例はない。
Claims (3)
- 基板と、
前記基板上に形成された半導体層と、
前記半導体層上に形成されたゲート電極、ソース電極及びドレイン電極と、
前記ゲート電極及び前記半導体層を覆う第1のパッシベーション膜と、
前記第1のパッシベーション膜上に形成され、前記ソース電極から前記ゲート電極と前記ドレイン電極との間まで延びたソースフィールドプレートと、
前記第1のパッシベーション膜及び前記ソースフィールドプレートを覆う第2のパッシベーション膜とを備え、
前記第1のパッシベーション膜は、少なくとも前記ゲート電極と前記ドレイン電極との間に形成された、強相関電子系材料を有し、
前記強相関電子系材料は、高エネルギー粒子が入射した際に導電性材料に相転移することを特徴とする化合物半導体デバイス。 - 前記強相関電子系材料は、前記ゲート電極の前記ドレイン電極側の端部と前記ソースフィールドプレートの前記ドレイン電極側の端部の少なくとも一方に設けられていることを特徴とする請求項1に記載の化合物半導体デバイス。
- 基板と、
前記基板上に形成された半導体層と、
前記半導体層上に形成されたゲート電極、ソース電極及びドレイン電極と、
前記ゲート電極及び前記半導体層を覆う第1のパッシベーション膜と、
前記第1のパッシベーション膜上に形成され、前記ソース電極から前記ゲート電極と前記ドレイン電極との間まで延びたソースフィールドプレートと、
前記第1のパッシベーション膜及び前記ソースフィールドプレートを覆う第2のパッシベーション膜と、
前記第2のパッシベーション膜上に形成され、厚さが5μmから100μmであり、他の電極に電気的に接続されていない厚膜金属とを備え、
前記ソースフィールドプレートの厚さは5μmから100μmであることを特徴とする化合物半導体デバイス。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016207849 | 2016-10-24 | ||
JP2016207849 | 2016-10-24 | ||
PCT/JP2017/000453 WO2018078894A1 (ja) | 2016-10-24 | 2017-01-10 | 化合物半導体デバイス |
Publications (2)
Publication Number | Publication Date |
---|---|
JP6233547B1 true JP6233547B1 (ja) | 2017-11-22 |
JPWO2018078894A1 JPWO2018078894A1 (ja) | 2018-10-25 |
Family
ID=60417512
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017521606A Active JP6233547B1 (ja) | 2016-10-24 | 2017-01-10 | 化合物半導体デバイス |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP6233547B1 (ja) |
CN (1) | CN109844913B (ja) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009033041A (ja) * | 2007-07-30 | 2009-02-12 | Sharp Corp | ヘテロ接合電界効果型トランジスタおよびその製造方法 |
WO2010070824A1 (ja) * | 2008-12-19 | 2010-06-24 | 株式会社アドバンテスト | 半導体装置、半導体装置の製造方法およびスイッチ回路 |
JP2016171197A (ja) * | 2015-03-12 | 2016-09-23 | 株式会社東芝 | 半導体装置 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5374843A (en) * | 1991-05-06 | 1994-12-20 | Silinconix, Inc. | Lightly-doped drain MOSFET with improved breakdown characteristics |
KR100399886B1 (ko) * | 1998-07-02 | 2004-02-11 | 주식회사 하이닉스반도체 | 반도체 메모리 소자의 커패시터 형성 방법 |
US8994035B2 (en) * | 2011-11-21 | 2015-03-31 | Sensor Electronic Technology, Inc. | Semiconductor device with low-conducting buried and/or surface layers |
US10002957B2 (en) * | 2011-12-21 | 2018-06-19 | Power Integrations, Inc. | Shield wrap for a heterostructure field effect transistor |
US9306014B1 (en) * | 2013-12-27 | 2016-04-05 | Power Integrations, Inc. | High-electron-mobility transistors |
US20150340483A1 (en) * | 2014-05-21 | 2015-11-26 | International Rectifier Corporation | Group III-V Device Including a Shield Plate |
CN104393048B (zh) * | 2014-11-18 | 2017-03-01 | 西安电子科技大学 | 介质调制复合交叠栅功率器件 |
-
2017
- 2017-01-10 JP JP2017521606A patent/JP6233547B1/ja active Active
- 2017-01-10 CN CN201780065035.5A patent/CN109844913B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009033041A (ja) * | 2007-07-30 | 2009-02-12 | Sharp Corp | ヘテロ接合電界効果型トランジスタおよびその製造方法 |
WO2010070824A1 (ja) * | 2008-12-19 | 2010-06-24 | 株式会社アドバンテスト | 半導体装置、半導体装置の製造方法およびスイッチ回路 |
JP2016171197A (ja) * | 2015-03-12 | 2016-09-23 | 株式会社東芝 | 半導体装置 |
Non-Patent Citations (1)
Title |
---|
YOU ZHOU, AND SHRIRAM RAMANATHAN: "Heteroepitaxial VO2 thin films on GaN: Structure and metal-insulator transition characteristics", JOURNAL OF APPLIED PHYSICS, vol. Volume 112, JPN6017036005, 12 October 2012 (2012-10-12), US, pages 074114 * |
Also Published As
Publication number | Publication date |
---|---|
JPWO2018078894A1 (ja) | 2018-10-25 |
CN109844913A (zh) | 2019-06-04 |
CN109844913B (zh) | 2022-02-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5611509B2 (ja) | フィールドプレートに接続されたソース領域を有する、ワイドバンドギャップ電界効果トランジスタ | |
JP6004319B2 (ja) | 半導体装置および半導体装置の製造方法 | |
TW202137568A (zh) | 改良之氮化鎵結構 | |
TW201547018A (zh) | 半導體裝置與其之製造方法 | |
WO2006132418A1 (ja) | 電界効果トランジスタ | |
CN102239550A (zh) | 场效应晶体管 | |
JP2017183703A (ja) | 改良された電子ガス閉込めヘテロ接合トランジスタ | |
US20090050899A1 (en) | High-output diamond semiconductor element | |
WO2018078894A1 (ja) | 化合物半導体デバイス | |
JP6233547B1 (ja) | 化合物半導体デバイス | |
WO2018078893A1 (ja) | 化合物半導体デバイス | |
Matys et al. | Enhancement of channel electric field in AlGaN/GaN multi-nanochannel high electron mobility transistors | |
JP2016167522A (ja) | 半導体装置 | |
CN105895649B (zh) | 一种通过改变sab膜质降低cis器件噪声的方法 | |
CN105789297B (zh) | 半导体装置 | |
JP2016122767A (ja) | 半導体装置及び半導体装置を製造する方法 | |
US20180019334A1 (en) | Multilayer passivation of the upper face of the stack of semiconductor materials of a field-effect transistor | |
US11283021B2 (en) | Compound semiconductor device including MOTT insulator for preventing device damage due to high-energy particles | |
JP5879805B2 (ja) | スイッチング素子及びこれを用いた電源装置 | |
US6531751B1 (en) | Semiconductor device with increased gate insulator lifetime | |
JP2007208036A (ja) | 半導体素子 | |
JP2015041651A (ja) | 半導体装置及びその製造方法 | |
JP2015072940A (ja) | トランジスタおよびその製造方法 | |
CN114220794B (zh) | 一种抗单粒子辐射加固的增强型GaN功率器件 | |
JP7386956B2 (ja) | 半導体装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170420 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20170420 |
|
A871 | Explanation of circumstances concerning accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A871 Effective date: 20170420 |
|
A975 | Report on accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A971005 Effective date: 20170606 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20170613 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20170926 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20171009 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6233547 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |