CN103175881B - 半导体气体传感器 - Google Patents

半导体气体传感器 Download PDF

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Publication number
CN103175881B
CN103175881B CN201210470822.7A CN201210470822A CN103175881B CN 103175881 B CN103175881 B CN 103175881B CN 201210470822 A CN201210470822 A CN 201210470822A CN 103175881 B CN103175881 B CN 103175881B
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control electrode
coupling agent
semiconductor
layer
gas sensor
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CN103175881A (zh
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C·维尔贝茨
T·科莱特
H-P·弗雷里希斯
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TDK- Maikenasi limited liability company
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MEIKENAS CO
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Abstract

基于集成的场效应晶体管的半导体气体传感器具有半导体主体和通过间隙与通道区域分离的气体敏感的控制电极且构造为悬浮栅场效应晶体管，或者控制电极设置为具有间隙的电容器的第一板且电容器的第二板与电容性控制构造的场效应晶体管的栅极连接，控制电极具有半导体载体层和气体敏感层，半导体载体层具有增附剂层且气体敏感层位于增附剂层上，控制电极与参考电势连接，气体敏感层的表面朝着通道区域或第二板，在半导体主体表面上设有连接区，支撑区设置在连接区内，连接区具有第一连接区域和第二连接区域，第一连接区域借助第一连接剂与控制电极电连接和力锁合连接，第二连接区域借助第二连接剂与控制电极至少力锁合连接。

Description

半导体气体传感器
技术领域
本发明涉及根据权利要求1的前序部分的半导体气体传感器。
背景技术
由DE 100 36 178 A1公开了一种FET湿度传感器。在此，通过悬浮栅（Suspended Gate/SG）调整通道区的导电能力。此外，由DE 42 39 319 C2、DE 10 2005 008 051 A和EP 1 103 808 B1分别公开了SGFET气体传感器。
此外，由DE 199 07 168 C1、US 5 545 589 A、US 5 137 461 A和US 5 432675 A公开了一些其他的固定装置。
这类具有通过气隙与通道区域间隔开的控制电极的MOS晶体管的共同特征是：控制电极和半导体主体通常不是一体构造的。由此，必须借助于连接剂将控制电极与所属的晶体管区域连接。此外，电连接控制电极。
发明内容
在所述背景下，本发明的任务在于，说明一种半导体气体传感器，其进一步改进现有技术。
所述任务通过具有权利要求1的特征的半导体气体传感器解决。本发明的有利构型包含在从属权利要求中。
根据本发明的主题，提供基于集成的场效应晶体管的半导体气体传感器，其具有半导体主体，其具有构造在半导体主体的表面上的钝化层，其中半导体气体传感器具有通过间隙与通道区域分离的气体敏感的控制电极并且被构造为悬浮栅场效应晶体管（SGFET），或者控制电极设置为具有间隙的电容器的第一板并且所述电容器的第二板与电容性控制地构造的场效应晶体管（CCFET）的栅极连接，并且控制电极具有半导体载体层，其具有位于其上的增附剂层和位于所述增附剂上的气体敏感层，其中控制电极与参考电势连接，并且所述气体敏感层（120）的表面朝向通道区域（55）或第二板，并且设有支撑区，其具有第一支承结构（70）和第二支承结构（80），所述第一支承结构具有第一支承区域（75）并且所述第二支承结构具有第二支承区域（85），其中在半导体主体的表面上设有连接区，并且支撑区与所述连接区邻接，所述连接区具有第一连接区域和第二连接区域，并且第一连接区域具有穿过钝化层的第一成型部（Ausformung），并且所述第一成形部具有底面，所述底面具有与参考电势连接的导电层，所述第一连接区域借助于第一连接剂与控制电极具有电连接和力锁合连接，并且所述第二连接区域借助于第二连接剂与控制电极至少具有力锁合连接，第一连接剂至少部分地填充成型部并且所述控制电极与导电层连接。
应注意，控制电极的朝向通道区域的面以下也称作内面，即气体敏感层设置在内面上。在此，气体敏感层在SGFET中覆盖至少一部分、优选整个通道区域或者在CCFET中以预给定的间距覆盖反电极、即第二板，其中所述间距确定所述间隙的孔径。控制电极的与内面相对置的面称作外面或者称作覆盖面。此外，概念“晶体管区”表示包括源区域、通道区域和漏区域的区。
优点在于，通常构造为层堆的控制电极借助于第一连接剂与半导体主体不仅机械地、即力锁合地连接而且借助于第一连接剂与参考电势电连接。研究表明，借助于第一连接剂的电连接可以取代例如借助于键合引线的附加电接通。由此可以在所谓的晶片水平层上已经实施成型部的制造并且可以将成型部的制造毫无问题地添加到集成电路的制造过程中。制造气体传感器的成本更低，并且气体传感器的可靠性更高。此外，与借助键合引线在控制电极的覆盖面或者外面上实施相比，结构高度更小。研究表明，第一连接剂的较小导电能力已经足以电连接控制电极。优选地，连接电阻构造为低于50M欧姆，最高优选低于1M欧姆。有利的是，第一连接剂和/或第二连接剂相同并且优选被构造为导电粘接剂。在此足够的是，导电粘接剂或至少第一连接剂具有高于1S/m的导电能力。
换句话说，SGFET或CGFET也称作集成部件，其中第一连接剂和/或第二连接剂是第一部分，控制电极是集成部件的构造在钝化层下面的第三部分的第二部分。在不同部分之间存在电信号连接，即集成部件的各个部分之间彼此有效电连接并且共同形成完整的部件。
在一个扩展方案中，控制电极在半导体表面的法向量的方向上与连接区间隔开并且覆盖连接区。在此，控制电极和连接区之间的间距尤其通过第一支承结构的高度以及通过第二支承结构的高度确定，其中优选地，第一支承结构的高度与第二支承结构的高度相同。支承结构的高度在此理解为相应的支承结构沿法向量的侧边。在一个特别优选的实施方式中，第一支承区域和/或第二支承区域分别具有一个平台（Plateau），其中所述平台构造在钝化层的表面上并且控制电极位于所述平台上。在此优选地，控制电极仅仅位于平台上并且由第一连接剂和/或第二连接剂既仅仅保持又仅仅借助于连接剂之一与参考电势电连接。
根据一种扩展方案，除第一连接区域以外，第二连接区域也具有穿过钝化层的第二成型部，其分别具有底面。此外优选地，在第二成型部的底面上构造有导电层。优选地，第二连接剂至少部分地填充第二成型部并且除机械连接以外还建立控制电极和参考电势之间的电连接，其方式是，具有导电能力的第二连接剂将控制电极与导电层连接。此外优选地，槽状地或孔状地构造两个成型部，并且各个印制导线层的介电层穿过所述成型部。根据一种替代实施方式优选地，两个成型部的侧面的一部分构造有导电层。研究表明，在所述成型部内，印制导线层和含硅的层、优选具有位于其上的硅化物层的掺杂的多晶硅层都是适合的。在此有利地，硅化物层构造为钨硅化物。此外优选地，第一连接剂和/或第二连接剂完全地填充第一成型部或者第二成型部。
根据一种优选实施方式，在底面上构造有一个、优选多个截锥状的隆起部。根据一个扩展方案，隆起部构造成能导电的，特别优选地，隆起部构造为钨塞。隆起部的优点是，第一连接剂和/或第二连接剂构造与成型部以及尤其是与底面的特别可靠的机械连接和/或电连接。换句话说，钨塞或者隆起部增大了通过两种连接剂涂覆的表面。
根据一种优选的实施方式，第一连接剂和第二连接剂仅仅设置在控制电极下方和控制电极的侧面上。由此，控制电极的外面不由两种连接剂之一包围，并且气体传感器的结构高度减小。
在另一实施方式中特别有利的是，第一连接区域与第一支承结构紧邻。由此，需要较少的半导体表面面积来构造气体传感器。此外有利地，由同样设置在半导体主体上的集成电路控制SGFET或CCFET，并且借助于集成电路分析处理SGFET的信号。
附图说明
以下参照附图详细阐述本发明。在此相同的部件标注相同的标记。极其示意性地表示所示实施方式，即间距和横向延展和纵向延展不是按照比例的并且（只要没有额外说明）不具有可推导的彼此几何关系。
附图示出：
图1：SGFET半导体气体传感器的横截面视图，
图2：CCFET半导体气体传感器的横截面视图，
图3：根据第一实施方式的图1和图2的局部详细视图，
图4：根据第二实施方式的图1和图2的局部详细视图。
具体实施方式
图1的示图示出SGFET半导体气体传感器的横截面视图，所述SGFET半导体气体传感器具有电路壳体（未示出）和集成在所述电路壳体内的半导体气体传感器10，所述半导体气体传感器具有半导体主体20，所述半导体主体具有构造在表面上的钝化层30，所述半导体气体传感器具有构造在半导体主体20中的集成的悬浮栅场效应晶体管40（简称SGFET），其具有晶体管区，其具有源区域50、通道区域55和漏区域60。半导体主体20借助于粘接层24固定在载体22（也称作引线框架）上。在半导体主体20的表面上，在最上面的印制导线层25中构造有金属面——所谓的焊盘。借助于所分配的键合引线26通过所分配的引脚27将相应的焊盘与外部的（即位于电路壳体外部的）电连接电连接。最上面的印制导线层25除焊盘以外由钝化层30覆盖。在钝化层30下面根据印制导线层的数量构造有多个氧化层65，其中构造在氧化层内的印制导线层没有示出。
SGFET具有支撑区，所述支撑区具有第一支承结构70和第二支承结构80，所述第一支承结构具有第一支承区域75，所述第二支承结构具有第二支承区域85，其中晶体管区设置在支撑区内半导体主体20的表面上。第一支承区域75和第二支承区域85沿着半导体表面的法向量设置在晶体管区上方并且与晶体管区间隔开。
在通道区域55上方设有控制电极100，其中控制电极100覆盖通道区域55并且位于第一支承区域75和第二支承区域85上，并且在通道区域55和控制电极100之间构造有间隙110。
在其他走向中，控制电极100部分地覆盖构造在半导体主体20的表面上的连接区，其中连接区包括具有第一成型部112的第一连接区域和具有第二成型部114的第二连接区域。两个成型部112、114优选构造为槽状或孔状结构并且在此穿过设置在半导体主体20的表面上的钝化层30和位于其下方的氧化层65。在两个成型部112、114的底部上分布构造有掺杂的、能够导电的多晶硅层115，其具有硅化物层。
此外，控制电极100在半导体主体20的表面的法向量的方向上与连接区间隔开。
此外，控制电极100在朝向通道区域55的面上具有气体敏感层120。气体敏感层120在增复剂层122上与通常由半导体材料构造的载体材料124连接。
支撑区在半导体主体20的表面上设置在连接区内，其中连接区具有第一连接区域和第二连接区域，所述第一连接区域具有第一成型部112并且所述第二连接区域具有第二成型部114，所述第一连接区域借助于由优选构造为导电粘接剂的第一连接剂130与控制电极100既具有电接触或连接也具有力锁合连接。由此，控制电极100与参考电势（未示出）连接。
此外，第二连接区域借助于第二连接剂140与控制电极100连接。有利的是，第二连接剂140与第一连接剂130相同。由此，可以简化气体传感器的制造过程并且节省制造成本。应注意，根据第一连接剂140的替代实施方式，仅仅构造力锁合连接也是足够的。此外优选地，第一连接剂和第二连接剂130、140设置在控制电极100下方和控制电极100的外侧上，但不在外表面145上。
图2的示图示出CCGFET半导体气体传感器的横截面视图。以下仅仅阐述与图1的示图的不同。晶体管区不是构造控制电极100下方间隙110内，而是构造在半导体主体20的另一位置上。控制电极100的气体敏感层现在是电容器的第一板。电容器的第二板构造在第一板下方间隙110的底部区域中并且借助于印制导线117与场效应晶体管的栅极57连接。此外，第二板由钝化层30覆盖并且由此受到保护以免环境影响。如果现在电容器的第一板上的逸出功变化，则场效应晶体管的栅极57上的电压由此也变化并且通道区域55中的导电能力因此也变化。即电容性地控制场效应晶体管的栅极电压。
在图3的示图中示出了根据第一实施方式的图1和图2的局部详细视图。以下仅仅阐述与以上附图中的实施方式的不同。应理解，以下阐述的实施方式可以毫无问题地过度到第二连接区域。控制电极100部分地覆盖第一成型部112。为了制造第一成型部112，除设置在氧化层下方的能够导电的多晶硅层115以外，优选借助于各向异性的蚀刻工艺去除氧化层65。在成型部112的侧面上构造有钝化层30。由此清楚，在沉积钝化层之前已经借助于第一蚀刻工艺施加了第一成型部112。随后，借助所谓的盘窗蚀刻工艺在成型部112的底部区域中暴露多晶硅层115。在一个没有示出的替代实施方式中，也可以在沉积钝化层30之后制造成型部112。在此，在成型部的侧面上不构造钝化层30。
第一支承结构70紧邻第一成型部112或者第一连接区域。第一支承结构70在表面上具有平顶山状提高的支承区域75。通过印制导线构造在最上面的印制导线层25中钝化层30下方来实现所述提高，并且所述提高与形状锁合地置于支承区域75上的控制电极100一起构成沟纹（Falz）。为了将控制电极100可靠地不仅力锁合地而且电地与半导体主体20连接，第一连接剂130完全填充第一成型部112和沟纹。此外，在半导体主体20的表面上控制电极100的侧面的一部分和钝化层30的一部分由第一连接剂130围绕。由此，借助于第一连接剂130构造控制电极100与半导体主体20的非常可靠且坚固的连接。
在图4的示图中示出了根据第二实施方式的图1和图2的局部详细视图。以下仅仅阐述与以上附图的不同。在底面上或者在多晶硅层115上设置有多个截锥状的隆起部，其优选被构造为钨塞150。钨塞150与底座形成材料锁合且力锁合的连接，所述底座优选构造为硅化物层、最优选构造为钨硅化物层。钨塞150分别由第一连接剂130包裹。由此在第一连接剂130和底部区域之间构造特别牢固且可靠的连接。

Claims (14)

1.半导体气体传感器(10)，其基于集成的场效应晶体管，其具有半导体主体(20)，所述半导体主体(20)具有构造在所述半导体主体(20)的表面上的钝化层(30)，
-所述半导体气体传感器具有通过间隙与通道区域分离的气体敏感的控制电极并且构造为悬浮栅场效应晶体管(SGFET)，或者
-所述控制电极(100)设置为具有间隙的电容器的第一板，并且所述电容器的第二板与电容性控制地构造的场效应晶体管(CCFET)的栅极连接，并且
所述控制电极具有半导体载体层和气体敏感层(120)，所述半导体载体层具有位于其上的增附剂层并且所述气体敏感层位于所述增附剂层上，其中，所述控制电极与参考电势连接，
-所述气体敏感层(120)的表面朝着所述通道区域(55)或所述第二板，
-设有支撑区，所述支撑区具有第一支承结构(70)和第二支承结构(80)，所述第一支承结构具有第一支承区域(75)并且所述第二支承结构具有第二支承区域(85)，
其特征在于，
在所述半导体主体的表面上设有连接区，并且所述支撑区与所述连接区邻接，所述连接区具有第一连接区域和第二连接区域，所述第一连接区域具有穿过所述钝化层(30)的第一成型部(112)，并且所述第一成型部具有底面，所述底面具有与所述参考电势连接的导电层(115)，并且所述第一连接区域借助于第一连接剂(130)与所述控制电极(100)具有电连接和力锁合连接，并且所述第二连接区域借助于第二连接剂(140)与所述控制电极(100)至少具有力锁合连接，并且所述第一连接剂(130)至少部分地填充所述成型部，并且所述控制电极(100)与所述导电层(115)连接。
2.根据权利要求1所述的半导体气体传感器(10)，其特征在于，所述控制电极(100)在所述半导体表面的法向量的方向上与所述连接区间隔开并且至少部分地覆盖所述连接区。
3.根据权利要求1所述的半导体气体传感器(10)，其特征在于，所述第二连接区域具有穿过所述钝化层(30)的第二成型部(114)，所述第二成型部具有底面，并且在所述底面上构造有导电层，并且所述第一连接剂(130)将所述控制电极(100)与所述导电层电连接。
4.根据权利要求3所述的半导体气体传感器(10)，其特征在于，在所述第一成型部的和所述第二成型部的底面上构造有截锥状的隆起部。
5.根据权利要求3所述的半导体气体传感器(10)，其特征在于，在所述第一成型部的和所述第二成型部的底面上构造有多个截锥状的隆起部。
6.根据权利要求4或5所述的半导体气体传感器(10)，其特征在于，所述隆起部构造为钨塞(150)。
7.根据权利要求3至5中任一项所述的半导体气体传感器(10)，其特征在于，所述导电层包含硅。
8.根据权利要求3至5中任一项所述的半导体气体传感器(10)，其特征在于，所述导电层由掺杂的多晶硅层(115)和硅化物层构成。
9.根据权利要求1至5中任一项所述的半导体气体传感器(10)，其特征在于，所述第一连接剂(130)和所述第二连接剂(140)包含导电粘接剂。
10.根据权利要求1至5中任一项所述的半导体气体传感器(10)，其特征在于，所述第一连接剂(130)和所述第二连接剂(140)仅仅设置在所述控制电极(100)下方和所述控制电极(100)的外侧上。
11.根据权利要求1至5中任一项所述的半导体气体传感器(10)，其特征在于，所述第一连接区域与所述第一支承结构(70)紧邻。
12.根据权利要求3至5中任一项所述的半导体气体传感器(10)，其特征在于，所述第一连接剂(130)完全填充所述第一成型部(112)和/或所述第二连接剂(140)完全填充所述第二成型部(114)。
13.根据权利要求1至5中任一项所述的半导体气体传感器(10)，其特征在于，所述第一支承区域(75)和/或所述第二支承区域(85)分别包括一个平台，所述平台构造在所述钝化层(30)的表面上，并且所述控制电极位于所述平台上。
14.根据权利要求1至5中任一项所述的半导体气体传感器(10)，其特征在于，所述控制电极仅仅位于所述第一支承区域(75)和所述第二支承区域(85)上并且仅仅由所述第一连接剂(130)和/或由所述第二连接剂(140)保持。
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