JP5566439B2 - 固定装置 - Google Patents
固定装置 Download PDFInfo
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- JP5566439B2 JP5566439B2 JP2012264299A JP2012264299A JP5566439B2 JP 5566439 B2 JP5566439 B2 JP 5566439B2 JP 2012264299 A JP2012264299 A JP 2012264299A JP 2012264299 A JP2012264299 A JP 2012264299A JP 5566439 B2 JP5566439 B2 JP 5566439B2
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- 239000000463 material Substances 0.000 claims description 36
- 238000002161 passivation Methods 0.000 claims description 30
- 239000004065 semiconductor Substances 0.000 claims description 19
- 239000004020 conductor Substances 0.000 claims description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 7
- 229920005591 polysilicon Polymers 0.000 claims description 7
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 6
- 229910052721 tungsten Inorganic materials 0.000 claims description 6
- 239000010937 tungsten Substances 0.000 claims description 6
- 229910021332 silicide Inorganic materials 0.000 claims description 5
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 5
- 239000000853 adhesive Substances 0.000 claims description 4
- 230000001070 adhesive effect Effects 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 229920000620 organic polymer Polymers 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- 230000000149 penetrating effect Effects 0.000 claims 1
- 238000000465 moulding Methods 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 2
- 229910021342 tungsten silicide Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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Description
Claims (14)
- 集積回路を備える半導体本体(20)と、
前記半導体本体(20)の表面に形成された誘電性のパッシベーション層(50)と、
前記パッシベーション層(50)の下側に形成されている導体路(45)と、
前記導体路(45)の下側に形成されている酸化物層(40)と、
前記パッシベーション層(50)の上側に形成されている構成素子(60)と前記半導体本体(20)との間で力結合による結合を形成する接続材料(80)と、
を有する固定装置(10)であって、
前記パッシベーション層(50)と前記酸化物層(40)とを貫通する、底面を備えた成形部(70)が形成されており、
前記成形部(70)の底面には導電性の層(30)が形成されており、
前記接続材料(80)は有機ポリマーを含み、
前記導電性の層(30)と前記構成素子(60)との間には電気的接続が形成されている、
固定装置(10)において、
前記構成素子(60)は、前記パッシベーション層(50)の下側に形成された集積構成素子の第1部分として設けられており、前記接続材料(80)は、当該集積構成素子の第2部分として設けられており、
前記構成素子(60)は、ガスセンサトランジスタの制御電極として構成されており、
前記パッシベーション層(50)が、プラトー(55)を形成し、前記プラトー(55)の上に前記構成素子(60)が載置されているか、または、
前記接続材料(80)が、前記成形部(70)の外側で、前記パッシベーション層(50)の上に、前記パッシベーション層(50)の平面における前記成形部(70)の面積よりも大きい載置領域を形成しており、前記載置領域の上に前記構成素子(60)が載置されている、
ことを特徴とする固定装置(10)。 - 前記底面の上に1つの突出部が形成されている、
請求項1記載の固定装置(10)。 - 前記底面の上に複数の突出部が形成されている、
請求項2記載の固定装置(10)。 - 前記突出部は、タングステンプラグ(100)として形成されている、
請求項2または3記載の固定装置(10)。 - 前記突出部は、前記接続材料(80)によって完全に周囲が取り囲まれている、
請求項2から4のいずれか一項記載の固定装置(10)。 - 前記突出部は、前記接続材料(80)と、素材結合による結合を形成している、
請求項2から5のいずれか一項記載の固定装置(10)。 - 前記導電性の層(30)はシリコンを含む、
請求項1から6のいずれか一項記載の固定装置(10)。 - 前記導電性の層(30)は、ドーピングされたポリシリコン層(30)とケイ化物層から形成されている、
請求項1から7のいずれか一項記載の固定装置(10)。 - 前記導電性の層(30)は、金属路によって形成される、
請求項1から8のいずれか一項記載の固定装置(10)。 - 前記接続材料(80)は、前記成形部(70)を完全に充填している、
請求項1から9のいずれか一項記載の固定装置(10)。 - 前記接続材料(80)は導電性接着材を含む、
請求項1から10のいずれか一項記載の固定装置(10)。 - 前記接続材料(80)は、前記構成素子(60)の側面の一部を取り囲み、前記構成素子(60)との素材結合を形成している、
請求項1から11のいずれか一項記載の固定装置(10)。 - 前記導電性の層(30)が、前記成形部(70)の側面に形成されている、
請求項1から12のいずれか一項記載の固定装置(10)。 - 前記パッシベーション層(50)は、前記成形部(70)の壁部に形成されている、
請求項1から12のいずれか一項記載の固定装置(10)。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102011119957.1 | 2011-12-02 | ||
DE102011119957A DE102011119957A1 (de) | 2011-12-02 | 2011-12-02 | Befestigungsvorrichtung |
Publications (2)
Publication Number | Publication Date |
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JP2013118382A JP2013118382A (ja) | 2013-06-13 |
JP5566439B2 true JP5566439B2 (ja) | 2014-08-06 |
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Application Number | Title | Priority Date | Filing Date |
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JP2012264299A Active JP5566439B2 (ja) | 2011-12-02 | 2012-12-03 | 固定装置 |
Country Status (5)
Country | Link |
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US (1) | US8669662B2 (ja) |
EP (1) | EP2600145B1 (ja) |
JP (1) | JP5566439B2 (ja) |
CN (1) | CN103137590B (ja) |
DE (1) | DE102011119957A1 (ja) |
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Publication number | Priority date | Publication date | Assignee | Title |
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JPH083476B2 (ja) * | 1986-09-03 | 1996-01-17 | 株式会社東芝 | Fet型センサ |
JPH01250850A (ja) * | 1988-03-31 | 1989-10-05 | Toshiba Corp | 半導体感湿素子 |
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DE102006053461A1 (de) | 2006-11-09 | 2008-05-15 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Mikroelektronische Baugruppe und Verfahren zum Herstellen einer mikroelektronischen Baugruppe |
US8299455B2 (en) * | 2007-10-15 | 2012-10-30 | International Business Machines Corporation | Semiconductor structures having improved contact resistance |
DE102011118930A1 (de) * | 2011-11-21 | 2013-05-23 | Micronas Gmbh | Halbleiter-Gassensor |
-
2011
- 2011-12-02 DE DE102011119957A patent/DE102011119957A1/de not_active Withdrawn
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2012
- 2012-11-15 EP EP12007745.8A patent/EP2600145B1/de active Active
- 2012-11-30 CN CN201210505864.XA patent/CN103137590B/zh active Active
- 2012-12-02 US US13/691,827 patent/US8669662B2/en active Active
- 2012-12-03 JP JP2012264299A patent/JP5566439B2/ja active Active
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EP2600145A1 (de) | 2013-06-05 |
US20130140702A1 (en) | 2013-06-06 |
US8669662B2 (en) | 2014-03-11 |
EP2600145B1 (de) | 2015-08-12 |
CN103137590B (zh) | 2016-05-04 |
JP2013118382A (ja) | 2013-06-13 |
CN103137590A (zh) | 2013-06-05 |
DE102011119957A1 (de) | 2013-06-06 |
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