CN103137590A - 固定装置 - Google Patents

固定装置 Download PDF

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CN103137590A
CN103137590A CN201210505864XA CN201210505864A CN103137590A CN 103137590 A CN103137590 A CN 103137590A CN 201210505864X A CN201210505864X A CN 201210505864XA CN 201210505864 A CN201210505864 A CN 201210505864A CN 103137590 A CN103137590 A CN 103137590A
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fixture
connecting media
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CN103137590B (zh
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C·维尔贝茨
T·科莱特
H-P·弗雷里希斯
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TDK- Maikenasi limited liability company
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Abstract

本发明涉及一种固定装置，其包括：一具有集成电路的半导体本体；一构造在所述半导体本体的表面上的介电钝化层；一构造在所述钝化层下方的带状导体；一构造在所述带状导体下方的氧化物层；一连接介质，所述连接介质在一构造在所述钝化层上方的构件与所述半导体本体之间形成力锁合的连接，其中，一透穿所述钝化层和所述氧化物层的成型部具有一底部面并且在所述底部面上构造一导电层并且所述连接介质在所述导电层与所述构件之间构造电连接。

Description

固定装置
技术领域
本发明涉及一种如权利要求1前序部分所述的固定装置。
背景技术
由DE 10 2005 009 163 A1公开的是，在半导体本体的钝化表面上借助于导电粘合剂构造电极以连接构件。此外，由DE 10 2006 053 461 A1公开了用于制造微电子结构组件的装置和方法。
由DE 100 36 178 A1、DE 42 39 319 C2和EP 1 103 808 B1公开了FET-湿度传感器，其中，通过空气隙与通道区域间隔开的控制电极借助于键合方法与半导体本体电连接。所述控制电极附加地借助于夹紧装置与所述半导体本体力锁合地连接。
此外，由DE 199 07 168 C1、US 5 545 589 A、US 5137 461 A和US5432675A公开了另外的固定装置。
发明内容
由该背景出发，本发明的任务是，提供一种进一步拓展现有技术的固定装置。
所述任务通过具有权利要求1特征的固定装置解决。在从属权利要求中包含本发明的有利构型。
根据本发明的主题提供一种固定装置，其包括：一具有集成电路的半导体本体；一构造在所述半导体本体的表面上的介电钝化层；一构造在所述钝化层下方的带状导体；一构造在所述带状导体下方的氧化物层；一连接介质，所述连接介质包括有机聚合物，所述连接介质在一构造在所述钝化层上方的构件与所述半导体本体之间形成力锁合的连接；其中，构造一具有底部面并且透穿所述钝化层和所述氧化物层的成型部并且在所述底部面上和/或在所述成型部的侧面上构造一导电层并且所述连接介质包括有机聚合物并且在所述导电层与所述构件之间构造电连接。需注意的是：术语连接介质应理解为这样的连接介质，其在室温时为液态。这种连接介质也被称为导电粘合剂。
有利的是，借助于能导电的连接介质可将单独构件的另外的部分与所述半导体本体不仅电连接而且同时力锁合地连接。在此，表述“单独”特别是包括下述构件，其不是在所述集成电路的制造工艺中产生的。通过实验已经发现，利用这种新型固定装置可取消费事的优选借助于杠杆机构或卡锁机构或其他固定器件的机械安装和例如借助于焊丝的附加的电连接。通过这种新型技术可以在半导体本体与单独构件之间提供简单、可靠和成本低廉的连接。术语构件特别是应理解为电子的、电机械的构件及其部件例如气体传感器晶体管的单独的控制电极。在此，所述构件设置为一构造在所述钝化层下方的集成结构元件的第一部分并且所述连接介质设置为其第二部分。优选在不同的部件之间存在信号连接。换言之，所述集成结构元件的单个部件处于电作用连接中并且共同构成完整的结构元件。在一个优选的实施方式中，钝化层形成一凸台。所述构件支撑在或平放在所述凸台上。在一个替代的实施方式中，所述构件在所述成型部外部在所述钝化层上构成一大的支撑区域，其中，所述第一构件支撑在所述支撑区域上。大的支撑区域应理解为这样一个面，其尺寸比成型部在钝化层平面中的面大得多。
另外的优点是，所述成型部的制造已经在所谓的晶圆级平面上实施并且由此所述成型部的制造可容易地插入到集成电路的制造过程中。为了制造所述成型部，优选在施加钝化之后使用干蚀刻工艺、特别是焊盘窗蚀刻工艺
Figure BDA00002500395000021
在施加之后的这种制造步骤也被称为晶圆制造后段制程。
另外的实验已经显示，视应用而定，连接介质的低于50MOhm以下、最好1MOhm以下的小导电能力就足以例如将SGFET或CCFET的单独控制电极与基板、也就是半导体本体连接。由此，气体传感器的制造可以成本更低廉并且更可靠地实施。此外，与控制电极的盖面上具有焊丝的实施方式相比降低了结构高度。
根据一个优选的实施方式，在所述底部面上构造一个、优选多个升高部。所述升高部特别是截锥形地成形。优选所述升高部由所述连接介质完全包围并且特别是所述升高部与所述连接介质形成材料锁合的连接。在此，所述连接介质优选构造为导电粘合剂。
根据一个进一步方案，所述升高部能导电地构成，尤其优选的是，所述升高部构造为钨塞。升高部的优点是，所述连接介质与所述成型部并且特别是与所述底部面形成特别可靠的机械连接和/或电连接。换言之，钨塞或升高部增大了表面并且由此增大了需用连接介质润湿的表面。
根据一个另外的实施方式，所述导电层包含硅。在此优选的是，所述导电层包括掺杂多晶硅层和/或硅化物层。在一个替代的实施方式中，所述导电层由金属的带状导体或由金属带构成。
在一个进一步构型中，所述连接介质完全填充所述成型部。由此可在所述半导体本体与所述构件之间构造特别可靠的连接。一个优点是，所述连接介质密封所述成型部以防受污染，从而使得不会有外来物质侵入。
根据一个进一步方案，优选的是，所述成型部沟形或孔形地构成。根据一个替代的实施方式，优选的是，所述成型部的侧面的一部分构造有导电层。通过实验已经显示，在所述成型部内部，不仅带状导体层而且含硅层、优选具有表面贴装的（aufliegenden）硅化物层的掺杂多晶硅层都是合适的。在此有利的是，所述硅化物层构造为钨硅化物。
附图说明
下面参照附图详细阐述本发明。在此，相同的部件用相同的参考标号表示。所示的实施例是非常示意性的，也就是说，距离以及横向和竖直延伸都是非比例的并且只要没有特别说明彼此间不具有可导出的几何关系。附图表示：
图1是第一实施方式的横截面图；
图2是第二实施方式的横截面图。
具体实施方式
图1中的视图示出了一个固定装置10的第一实施方式的横截面图，其具有一个半导体本体、一个集成电路（未示出）、一个构造在所述半导体本体20表面上的能导电的多晶硅层30、一个氧化物层40、一个处于所述氧化物层40上的带状导体45和一个钝化部50。需注意的是，带状导体45是没有进一步示出的最上部带状导体平面的一部分，所述带状导体平面也构成用于接收焊丝的金属面。此外，氧化物层40优选由多个氧化物层构成，其中，这些氧化物层一般在形成多平面金属化部的框架内沉积。钝化部50优选由氮化硅构成并且在带状导体45上方形成一凸台55。待与半导体本体20连接的构件60支撑在所述凸台55上，所述构件例如构造为气体传感器的控制电极。形状锁合地支撑的构件60与所述凸台55形成一个折叠部。为了将所述构件60与所述半导体本体20可靠地力锁合地连接并且电连接，连接介质80完全地填充成型部70和所述折叠部。此外，由所述连接介质80还包围所述构件60的侧面的一部分和所述半导体本体20表面上的钝化部50的一部分。由此，所述连接介质80不仅形成电接触而且形成所述半导体本体20与所述构件60之间的力锁合连接。此外，所述连接非常可靠并且耐老化。完全填充成型部70的一个优点是，抑制由此产生的钝化实施、也就是抑制外来物质侵入。
所述构件60能导电地优选至少构造在向着钝化部50的侧上。成型部70优选构造为沟状或孔状结构并且穿过钝化部50，其中，在成型部70的底部区域中构造多晶硅层30并且在成型部70的壁上构造钝化部50。由此可看出，成型部70在钝化部50沉积之前就已经借助于蚀刻工艺施加。接着，多晶硅30利用所谓的焊盘窗蚀刻工艺在成型部70的底部区域中露出。在一个未示出的替代实施方式中，也可以在钝化部50沉积之后制造成型部70。在此，在成型部70的侧面上不构造钝化层50。
根据图1的视图，成型部70借助于连接介质80填充。所述连接介质80部分地在一个侧面上包围所述构件60并且与所述构件60且与所述成型部的表面形成材料锁合的连接。
在图2的视图中示出第二实施方式。下面仅仅阐述与图1中的实施方式的不同。构件60完全覆盖成型部70。在构件60与钝化部50之间在成型部70外部构造连接介质80，也就是说，其构成一个用于构件60的大支撑面。在成型部70的底部面上或在多晶硅层30上设置多个截锥形的升高部，所述升高部优选构造为钨塞100。所述钨塞100与基板形成材料锁合和力锁合的连接，所述基板优选具有未示出的硅化物层，最优选具有钨硅化物层。所述钨塞100分别被用所述连接介质80包套。由此在所述连接介质80与所述成型部70的底部区域之间实现特别稳固和可靠的连接。

Claims (13)

1.一种固定装置，其包括：
·一具有集成电路的半导体本体（20）；
·一构造在所述半导体本体（20）的表面上的介电钝化层（50）；
·一构造在所述钝化层（50）下方的带状导体（45）；
·一构造在所述带状导体（45）下方的氧化物层（40）；
·一连接介质（80），所述连接介质在一构造在所述钝化层（50）上方的构件（60）与所述半导体本体（20）之间构造力锁合的连接；
·一具有底部面并且透穿所述钝化层（50）和所述氧化物层（40）的成型部（70）并且在所述底部面上和/或在所述成型部的侧面上构造一导电层并且所述连接介质（80）包括有机聚合物并且在所述导电层与所述构件（60）之间构造电连接；
其特征在于，
所述构件（60）设置为一构造在所述钝化层（50）下方的集成结构元件的第一部分并且所述连接介质（80）设置为其第二部分。
2.根据权利要求1的固定装置（10），其特征在于，在所述底部面上构造一个升高部。
3.根据权利要求2的固定装置（10），其特征在于，在所述底部面上构造多个升高部。
4.根据权利要求2或3的固定装置（10），其特征在于，所述升高部构造为钨塞（100）。
5.根据权利要求2至4中任一项的固定装置（10），其特征在于，所述升高部由所述连接介质（80）完全包围。
6.根据权利要求2至5中任一项的固定装置（10），其特征在于，所述升高部与所述连接介质（80）形成材料锁合的连接。
7.根据以上权利要求中任一项的固定装置（10），其特征在于，所述导电层包含硅。
8.根据以上权利要求中任一项的固定装置（10），其特征在于，所述导电层由掺杂多晶硅层（30）和硅化物层构成。
9.根据以上权利要求中任一项的固定装置（10），其特征在于，所述导电层由金属带构成。
10.根据以上权利要求中任一项的固定装置（10），其特征在于，所述连接介质（80）完全填充所述成型部（70）。
11.根据以上权利要求中任一项的固定装置（10），其特征在于，所述连接介质（80）包含导电粘合剂。
12.根据以上权利要求中任一项的固定装置（10），其特征在于，所述构件（60）构造为气体传感器晶体管的控制电极。
13.根据以上权利要求中任一项的固定装置（10），其特征在于，所述钝化层（50）构成一凸台（55）并且所述构件（60）支撑在所述凸台（55）上或者所述连接介质（80）在所述成型部（70）外部在所述钝化层（50）上构成一大的支撑区域并且所述构件（60）支撑在所述支撑区域上。
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