JP5490208B2 - 半導体ガスセンサ - Google Patents
半導体ガスセンサ Download PDFInfo
- Publication number
- JP5490208B2 JP5490208B2 JP2012255120A JP2012255120A JP5490208B2 JP 5490208 B2 JP5490208 B2 JP 5490208B2 JP 2012255120 A JP2012255120 A JP 2012255120A JP 2012255120 A JP2012255120 A JP 2012255120A JP 5490208 B2 JP5490208 B2 JP 5490208B2
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- JP
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- Prior art keywords
- gas sensor
- control electrode
- field effect
- effect transistor
- bonding material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 title claims description 69
- 239000010410 layer Substances 0.000 claims description 81
- 239000000463 material Substances 0.000 claims description 59
- 230000005669 field effect Effects 0.000 claims description 28
- 238000002161 passivation Methods 0.000 claims description 25
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 8
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 8
- 229910052721 tungsten Inorganic materials 0.000 claims description 8
- 239000010937 tungsten Substances 0.000 claims description 8
- 239000012790 adhesive layer Substances 0.000 claims description 7
- 239000003990 capacitor Substances 0.000 claims description 6
- 229910021332 silicide Inorganic materials 0.000 claims description 6
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 6
- 239000000853 adhesive Substances 0.000 claims description 4
- 230000001070 adhesive effect Effects 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 239000004020 conductor Substances 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000012360 testing method Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 2
- 229910021342 tungsten silicide Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
- G01N27/4141—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS specially adapted for gases
- G01N27/4143—Air gap between gate and channel, i.e. suspended gate [SG] FETs
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/10155—Shape being other than a cuboid
Landscapes
- Microelectronics & Electronic Packaging (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Molecular Biology (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102011118930A DE102011118930A1 (de) | 2011-11-21 | 2011-11-21 | Halbleiter-Gassensor |
DE102011118930.4 | 2011-11-21 |
Publications (2)
Publication Number | Publication Date |
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JP2013108987A JP2013108987A (ja) | 2013-06-06 |
JP5490208B2 true JP5490208B2 (ja) | 2014-05-14 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2012255120A Active JP5490208B2 (ja) | 2011-11-21 | 2012-11-21 | 半導体ガスセンサ |
Country Status (5)
Country | Link |
---|---|
US (1) | US8592875B2 (zh) |
EP (1) | EP2594928B1 (zh) |
JP (1) | JP5490208B2 (zh) |
CN (1) | CN103175881B (zh) |
DE (1) | DE102011118930A1 (zh) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102011119957A1 (de) * | 2011-12-02 | 2013-06-06 | Micronas Gmbh | Befestigungsvorrichtung |
DE102014000343A1 (de) * | 2014-01-11 | 2015-07-16 | Dräger Safety AG & Co. KGaA | Gasmessgerät |
JP6375629B2 (ja) * | 2014-01-28 | 2018-08-22 | 富士通株式会社 | ガスセンサ及びその製造方法 |
DE102014003962B4 (de) * | 2014-03-20 | 2017-11-02 | Tdk-Micronas Gmbh | Verfahren zum Prüfen eines CMOS-Transistors |
CN104122320A (zh) | 2014-07-11 | 2014-10-29 | 京东方科技集团股份有限公司 | 一种气体检测传感器件、显示面板及显示装置 |
US9448216B2 (en) * | 2014-10-10 | 2016-09-20 | Stmicroelectronics Pte Ltd | Gas sensor device with frame passageways and related methods |
DE102014017194B4 (de) * | 2014-11-21 | 2022-08-18 | Tdk-Micronas Gmbh | Halbleiter-Gassensor |
JP6687862B2 (ja) | 2015-06-30 | 2020-04-28 | 富士通株式会社 | ガスセンサ及びその使用方法 |
DE102016004338B4 (de) * | 2016-04-13 | 2019-03-21 | Drägerwerk AG & Co. KGaA | Verwendung eines Gassensor für Anästhesiegasse |
CN110596202A (zh) * | 2018-06-13 | 2019-12-20 | 香港科技大学 | 气敏型场效应晶体管装置和气敏型场效应晶体管装置阵列 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5137461A (en) | 1988-06-21 | 1992-08-11 | International Business Machines Corporation | Separable electrical connection technology |
DE4239319C2 (de) | 1992-11-23 | 1996-10-02 | Ignaz Prof Dr Eisele | Verfahren zum spacerfreien, hybriden Aufbau von Luftspalt und Gate von Suspended Gate Feldeffekttransistoren (SGFET) sowie nach dem Verfahren hergestellte Bauelemente |
US5545589A (en) * | 1993-01-28 | 1996-08-13 | Matsushita Electric Industrial Co., Ltd. | Method of forming a bump having a rugged side, a semiconductor device having the bump, and a method of mounting a semiconductor unit and a semiconductor device |
US5432675A (en) | 1993-11-15 | 1995-07-11 | Fujitsu Limited | Multi-chip module having thermal contacts |
DE19849932A1 (de) * | 1998-10-29 | 2000-05-11 | Siemens Ag | Gasdetektion nach dem Prinzip einer Messung von Austrittsarbeiten |
DE19907168C1 (de) * | 1999-02-19 | 2000-08-10 | Micronas Intermetall Gmbh | Schichtanordnung sowie Verfahren zu deren Herstellung |
EP1103808B1 (de) | 1999-11-25 | 2010-06-09 | Micronas GmbH | Gassensor |
DE10036178A1 (de) | 2000-07-25 | 2002-02-14 | Siemens Ag | Feuchtesensor und Verwendung |
US6828647B2 (en) * | 2001-04-05 | 2004-12-07 | Infineon Technologies Ag | Structure for determining edges of regions in a semiconductor wafer |
DE102005008051A1 (de) * | 2005-02-22 | 2006-08-24 | Siemens Ag | Gassensor und Verfahren zu dessen Betrieb |
DE102006033058B3 (de) * | 2006-07-14 | 2008-02-21 | Micronas Gmbh | Sensor zur Wasserstoff-Detektion |
EP2105733A1 (de) * | 2008-03-26 | 2009-09-30 | Micronas GmbH | Verfahren zum Messen der Konzentration eines Gases |
-
2011
- 2011-11-21 DE DE102011118930A patent/DE102011118930A1/de not_active Withdrawn
-
2012
- 2012-11-15 EP EP12007744.1A patent/EP2594928B1/de active Active
- 2012-11-20 CN CN201210470822.7A patent/CN103175881B/zh active Active
- 2012-11-21 US US13/683,324 patent/US8592875B2/en active Active
- 2012-11-21 JP JP2012255120A patent/JP5490208B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
JP2013108987A (ja) | 2013-06-06 |
CN103175881B (zh) | 2015-02-18 |
US8592875B2 (en) | 2013-11-26 |
EP2594928B1 (de) | 2016-04-27 |
DE102011118930A1 (de) | 2013-05-23 |
EP2594928A3 (de) | 2015-08-05 |
EP2594928A2 (de) | 2013-05-22 |
CN103175881A (zh) | 2013-06-26 |
US20130126947A1 (en) | 2013-05-23 |
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