CN106057779B - 一种半导体器件结构 - Google Patents
一种半导体器件结构 Download PDFInfo
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CN201610606441.5A CN106057779B (zh) | 2016-07-29 | 2016-07-29 | 一种半导体器件结构 |
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CN106057779A CN106057779A (zh) | 2016-10-26 |
CN106057779B true CN106057779B (zh) | 2018-09-21 |
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Families Citing this family (3)
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CN106952895B (zh) * | 2017-02-22 | 2019-05-10 | 新昌县诺趣智能科技有限公司 | 一种mim电容器结构的制造方法 |
US10424545B2 (en) * | 2017-10-17 | 2019-09-24 | Advanced Semiconductor Engineering, Inc. | Semiconductor package device and method of manufacturing the same |
CN110767631A (zh) * | 2019-11-07 | 2020-02-07 | 徐州陀微传感科技有限公司 | 一种图像传感器及图像传感器制作方法 |
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US4568601A (en) * | 1984-10-19 | 1986-02-04 | International Business Machines Corporation | Use of radiation sensitive polymerizable oligomers to produce polyimide negative resists and planarized dielectric components for semiconductor structures |
CN101667577A (zh) * | 2009-09-30 | 2010-03-10 | 北京大学 | 基于高介电常数材料的抗nmos器件总剂量辐照的集成电路 |
CN204350556U (zh) * | 2014-04-10 | 2015-05-20 | 苏州驭奇材料科技有限公司 | 一种电磁屏蔽散热膜 |
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US4568601A (en) * | 1984-10-19 | 1986-02-04 | International Business Machines Corporation | Use of radiation sensitive polymerizable oligomers to produce polyimide negative resists and planarized dielectric components for semiconductor structures |
CN101667577A (zh) * | 2009-09-30 | 2010-03-10 | 北京大学 | 基于高介电常数材料的抗nmos器件总剂量辐照的集成电路 |
CN204350556U (zh) * | 2014-04-10 | 2015-05-20 | 苏州驭奇材料科技有限公司 | 一种电磁屏蔽散热膜 |
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Effective date of registration: 20180809 Address after: 518055 Tian Liao building 1115, Tian Liao Industrial Zone, Nanshan District Taoyuan street, Shenzhen, Guangdong, China 1115 Applicant after: VANGUARD SEMICONDUCTOR CO.,LTD. Address before: 226300 266 Century Avenue, Nantong hi tech Zone, Nantong, Jiangsu Applicant before: Wang Hanqing |
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Address after: 518000 1301, building 3, Chongwen Park, Nanshan Zhiyuan, No. 3370 Liuxian Avenue, Fuguang community, Taoyuan Street, Nanshan District, Shenzhen, Guangdong Patentee after: Shenzhen Weizhao Semiconductor Co.,Ltd. Address before: 518055 Tian Liao building 1115, Tian Liao Industrial Zone, Nanshan District Taoyuan street, Shenzhen, Guangdong, China 1115 Patentee before: VANGUARD SEMICONDUCTOR CO.,LTD. |