JP2013108987A - 半導体ガスセンサ - Google Patents
半導体ガスセンサ Download PDFInfo
- Publication number
- JP2013108987A JP2013108987A JP2012255120A JP2012255120A JP2013108987A JP 2013108987 A JP2013108987 A JP 2013108987A JP 2012255120 A JP2012255120 A JP 2012255120A JP 2012255120 A JP2012255120 A JP 2012255120A JP 2013108987 A JP2013108987 A JP 2013108987A
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- Prior art keywords
- control electrode
- gas sensor
- bonding material
- semiconductor gas
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 61
- 238000002161 passivation Methods 0.000 claims abstract description 24
- 239000010410 layer Substances 0.000 claims description 71
- 239000000463 material Substances 0.000 claims description 56
- 230000005669 field effect Effects 0.000 claims description 13
- 239000003990 capacitor Substances 0.000 claims description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 7
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 7
- 229910052721 tungsten Inorganic materials 0.000 claims description 7
- 239000010937 tungsten Substances 0.000 claims description 7
- 239000012790 adhesive layer Substances 0.000 claims description 5
- 229910021332 silicide Inorganic materials 0.000 claims description 5
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 5
- 239000000853 adhesive Substances 0.000 claims description 4
- 230000001070 adhesive effect Effects 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 230000000149 penetrating effect Effects 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 abstract description 4
- 239000004020 conductor Substances 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000012360 testing method Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 2
- 229910021342 tungsten silicide Inorganic materials 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
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- G—PHYSICS
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- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
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- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
- G01N27/4141—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS specially adapted for gases
- G01N27/4143—Air gap between gate and channel, i.e. suspended gate [SG] FETs
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Abstract
【解決手段】第1の端子部分が、半導体本体(20)の表面に設けられたパッシベーション層(30)を貫通する第1の成形部分(112)を有し、該第1の成形部分(112)は、参照電位に接続された導電性層(115)を備えた底面を有し、該第1の端子部分と制御電極(100)とは第1の接合材(130)を用いて電気的接続かつ摩擦接続的に結合されている。第2の端子部分と前記制御電極(100)とは第2の接合材(140)を用いて少なくとも摩擦接続的に結合されており、前記第1の接合材(130)は前記成形部分を少なくとも部分的に充填し、前記制御電極(100)と前記導電性層(115)とを接続する。
【選択図】図1
Description
20 半導体本体
22 支持体
30 パッシベーション層
50 ソース領域
55 チャネル領域
60 ドレイン領域
65 酸化物層
70 第1の支持構造体
75 第1の載置領域
80 第2の支持構造体
85 第2の載置領域
100 制御電極
110 ギャップ
112 第1の成形部分
114 第2の成形部分
115 ドーピングされた導電性の多結晶シリコン層
120 ガス感応層
124 支持体材料
130 第1の接合材
140 第2の接合材
150 タングステンプラグ
Claims (14)
- 半導体本体(20)を備えた集積型の電界効果トランジスタをベースとする半導体ガスセンサ(10)であって、
前記半導体本体(20)の表面にパッシベーション層(30)が設けられており、
・前記電界効果トランジスタは、ギャップによってチャネル領域から分離されたガス感応性の制御電極を有し、サスペンデッドゲート電界効果トランジスタ(SGFET)として構成されているか、
または、
・前記制御電極(100)は、ギャップを有するコンデンサの第1の平板として設けられており、該コンデンサの第2の平板は、容量制御型として構成された前記電界効果トランジスタ(CCFET)のゲートに接続されており、
前記制御電極は、表面に付着材層を有する半導体支持層と、該付着材層の表面に設けられたガス感応層(120)とを有し、
前記制御電極は参照電位に接続されており、
前記ガス感応層(120)の表面は前記チャネル領域(55)または前記第2の平板に向けられており、
第1の載置領域(75)を有する第1の支持構造体(70)と第2の載置領域(85)を有する第2の支持構造体(80)とを備えた支持領域が設けられている、半導体ガスセンサ(10)において、
前記半導体本体の表面に端子領域が設けられており、
前記支持領域は前記端子領域に接しており、
前記端子領域は第1の端子部分と第2の端子部分とを含み、
前記第1の端子部分は、前記パッシベーション層(30)を貫通する第1の成形部分(112)を有し、
前記第1の成形部分は、前記参照電位に接続された導電性層(115)を備えた底面を有し、
前記第1の端子部分と前記制御電極(100)とは、第1の接合材(130)を用いて電気的接続されかつ摩擦接続的に結合されており、
前記第2の端子部分と前記制御電極(100)とは、第2の接合材(140)を用いて少なくとも摩擦接続的に結合されており、
前記第1の接合材(130)は前記成形部分を少なくとも部分的に充填し、前記制御電極(100)と前記導電性層(115)とを接続する
ことを特徴とする、半導体ガスセンサ(10)。 - 前記制御電極(100)は前記半導体本体(20)の表面の法線ベクトルの方向に、前記端子領域から離隔されており、該端子領域を少なくとも部分的に覆う、
請求項1記載の半導体ガスセンサ(10)。 - 前記第2の端子部分(140)は、底面を有しかつ前記パッシベーション層(30)を貫通する第2の成形部分(114)を含み、該底面に導電性層が設けられており、
前記第1の接合材(130)は前記制御電極(100)と前記導電性層とを電気的に接続する、
請求項1または2記載の半導体ガスセンサ(10)。 - 前記底面に、円錐台状の隆起部が形成されている、
請求項3記載の半導体ガスセンサ(10)。 - 前記底面に、前記円錐台状の隆起部が複数形成されている、
請求項4記載の半導体ガスセンサ(10)。 - 前記隆起部はタングステンプラグ(150)として形成されている、
請求項4または5記載の半導体ガスセンサ(10)。 - 前記導電性層はシリコンを含む、
請求項3から6までのいずれか1項記載の半導体ガスセンサ(10)。 - 前記導電性層は、ドーピングされた多結晶シリコン層(115)とシリサイド層とから形成されている、
請求項3から7までのいずれか1項記載の半導体ガスセンサ(10)。 - 前記第1の接合材(130)および前記第2の接合材(140)は導電性接着剤を含む、
請求項1から8までのいずれか1項記載の半導体ガスセンサ(10)。 - 前記第1の接合材(130)および前記第2の接合材(140)はもっぱら、前記制御電極(100)の下方かつ該制御電極(100)の外側に配置されている、
請求項1から9までのいずれか1項記載の半導体ガスセンサ(10)。 - 前記第1の端子部分は前記第1の支持構造体(70)に直接接する、
請求項1から10までのいずれか1項記載の半導体ガスセンサ(10)。 - 前記第1の接合材(130)および/または前記第2の接合材(140)が、前記第1の成形部分(112)および第2の成形部分(114)を完全に充填している、
請求項3から11までのいずれか1項記載の半導体ガスセンサ(10)。 - 前記第1の載置領域(75)および/または前記第2の載置領域(85)はそれぞれプラトー部分を有し、
前記プラトー部分は前記パッシベーション層(50)の表面に形成されており、
前記制御電極は前記プラトー部分上に設けられている、
請求項1から12までのいずれか1項記載の半導体ガスセンサ(10)。 - 前記制御電極はもっぱら、前記第1の載置部分(75)および前記第2の載置部分(85)上に設けられており、
前記制御電極はもっぱら、前記第1の接合材(130)および/または前記第2の接合材(140)によって保持されている、
請求項1から13までのいずれか1項記載の半導体ガスセンサ(10)。
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JP2015141061A (ja) * | 2014-01-28 | 2015-08-03 | 富士通株式会社 | ガスセンサ及びその製造方法 |
US11156576B2 (en) | 2015-06-30 | 2021-10-26 | Fujitsu Limited | Gas sensor and method of using the same |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102011119957A1 (de) * | 2011-12-02 | 2013-06-06 | Micronas Gmbh | Befestigungsvorrichtung |
DE102014000343A1 (de) * | 2014-01-11 | 2015-07-16 | Dräger Safety AG & Co. KGaA | Gasmessgerät |
DE102014003962B4 (de) | 2014-03-20 | 2017-11-02 | Tdk-Micronas Gmbh | Verfahren zum Prüfen eines CMOS-Transistors |
CN104122320A (zh) * | 2014-07-11 | 2014-10-29 | 京东方科技集团股份有限公司 | 一种气体检测传感器件、显示面板及显示装置 |
US9448216B2 (en) * | 2014-10-10 | 2016-09-20 | Stmicroelectronics Pte Ltd | Gas sensor device with frame passageways and related methods |
DE102014017194B4 (de) * | 2014-11-21 | 2022-08-18 | Tdk-Micronas Gmbh | Halbleiter-Gassensor |
DE102016004338B4 (de) * | 2016-04-13 | 2019-03-21 | Drägerwerk AG & Co. KGaA | Verwendung eines Gassensor für Anästhesiegasse |
CN110596202A (zh) * | 2018-06-13 | 2019-12-20 | 香港科技大学 | 气敏型场效应晶体管装置和气敏型场效应晶体管装置阵列 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5137461A (en) | 1988-06-21 | 1992-08-11 | International Business Machines Corporation | Separable electrical connection technology |
DE4239319C2 (de) | 1992-11-23 | 1996-10-02 | Ignaz Prof Dr Eisele | Verfahren zum spacerfreien, hybriden Aufbau von Luftspalt und Gate von Suspended Gate Feldeffekttransistoren (SGFET) sowie nach dem Verfahren hergestellte Bauelemente |
US5545589A (en) | 1993-01-28 | 1996-08-13 | Matsushita Electric Industrial Co., Ltd. | Method of forming a bump having a rugged side, a semiconductor device having the bump, and a method of mounting a semiconductor unit and a semiconductor device |
US5432675A (en) | 1993-11-15 | 1995-07-11 | Fujitsu Limited | Multi-chip module having thermal contacts |
DE19849932A1 (de) * | 1998-10-29 | 2000-05-11 | Siemens Ag | Gasdetektion nach dem Prinzip einer Messung von Austrittsarbeiten |
DE19907168C1 (de) * | 1999-02-19 | 2000-08-10 | Micronas Intermetall Gmbh | Schichtanordnung sowie Verfahren zu deren Herstellung |
DE50015937D1 (de) | 1999-11-25 | 2010-07-22 | Micronas Gmbh | Gassensor |
DE10036178A1 (de) | 2000-07-25 | 2002-02-14 | Siemens Ag | Feuchtesensor und Verwendung |
US6828647B2 (en) * | 2001-04-05 | 2004-12-07 | Infineon Technologies Ag | Structure for determining edges of regions in a semiconductor wafer |
DE102005008051A1 (de) * | 2005-02-22 | 2006-08-24 | Siemens Ag | Gassensor und Verfahren zu dessen Betrieb |
DE102006033058B3 (de) * | 2006-07-14 | 2008-02-21 | Micronas Gmbh | Sensor zur Wasserstoff-Detektion |
EP2105733A1 (de) * | 2008-03-26 | 2009-09-30 | Micronas GmbH | Verfahren zum Messen der Konzentration eines Gases |
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