CN103146509A - 清洁液组合物及其浓缩液和使用清洁液组合物的清洁方法 - Google Patents

清洁液组合物及其浓缩液和使用清洁液组合物的清洁方法 Download PDF

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Publication number
CN103146509A
CN103146509A CN2012105179042A CN201210517904A CN103146509A CN 103146509 A CN103146509 A CN 103146509A CN 2012105179042 A CN2012105179042 A CN 2012105179042A CN 201210517904 A CN201210517904 A CN 201210517904A CN 103146509 A CN103146509 A CN 103146509A
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CN
China
Prior art keywords
cleaning composition
liquid cleaning
cleaning
phosphonic acid
metal
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2012105179042A
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English (en)
Chinese (zh)
Inventor
谷口优美子
守田菊恵
堀家千代子
大和田拓央
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Kanto Chemical Co Inc
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Kanto Chemical Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kanto Chemical Co Inc filed Critical Kanto Chemical Co Inc
Publication of CN103146509A publication Critical patent/CN103146509A/zh
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/38—Cationic compounds
    • C11D1/62—Quaternary ammonium compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/66—Non-ionic compounds
    • C11D1/79—Phosphine oxides
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/30—Amines; Substituted amines ; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/36—Organic compounds containing phosphorus
    • C11D3/361—Phosphonates, phosphinates or phosphonites
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/36—Organic compounds containing phosphorus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
    • C23G1/14—Cleaning or pickling metallic material with solutions or molten salts with alkaline solutions
    • C23G1/16—Cleaning or pickling metallic material with solutions or molten salts with alkaline solutions using inhibitors
    • C23G1/18—Organic inhibitors
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
    • C23G1/14—Cleaning or pickling metallic material with solutions or molten salts with alkaline solutions
    • C23G1/20—Other heavy metals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/15—Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
CN2012105179042A 2011-12-06 2012-12-05 清洁液组合物及其浓缩液和使用清洁液组合物的清洁方法 Pending CN103146509A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011267368A JP6066552B2 (ja) 2011-12-06 2011-12-06 電子デバイス用洗浄液組成物
JP2011-267368 2011-12-06

Publications (1)

Publication Number Publication Date
CN103146509A true CN103146509A (zh) 2013-06-12

Family

ID=47323949

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2012105179042A Pending CN103146509A (zh) 2011-12-06 2012-12-05 清洁液组合物及其浓缩液和使用清洁液组合物的清洁方法

Country Status (8)

Country Link
US (1) US9334470B2 (enExample)
EP (1) EP2602309B1 (enExample)
JP (1) JP6066552B2 (enExample)
KR (1) KR102041624B1 (enExample)
CN (1) CN103146509A (enExample)
MY (1) MY165726A (enExample)
SG (1) SG191504A1 (enExample)
TW (1) TWI565797B (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9329486B2 (en) 2005-10-28 2016-05-03 Dynaloy, Llc Dynamic multi-purpose composition for the removal of photoresists and method for its use
US8263539B2 (en) 2005-10-28 2012-09-11 Dynaloy, Llc Dynamic multi-purpose composition for the removal of photoresists and methods for its use
US7632796B2 (en) 2005-10-28 2009-12-15 Dynaloy, Llc Dynamic multi-purpose composition for the removal of photoresists and method for its use
TWI450052B (zh) * 2008-06-24 2014-08-21 黛納羅伊有限責任公司 用於後段製程操作有效之剝離溶液
CN104508072A (zh) 2012-02-15 2015-04-08 安格斯公司 用于cmp后去除的组合物及使用方法
TWI572711B (zh) * 2012-10-16 2017-03-01 盟智科技股份有限公司 半導體製程用的清洗組成物及清洗方法
US9158202B2 (en) 2012-11-21 2015-10-13 Dynaloy, Llc Process and composition for removing substances from substrates
JP6203525B2 (ja) * 2013-04-19 2017-09-27 関東化學株式会社 洗浄液組成物
CN103757648B (zh) * 2014-01-16 2016-03-30 段云豪 一种手机表面铜锈的去除及防护剂
US11127587B2 (en) 2014-02-05 2021-09-21 Entegris, Inc. Non-amine post-CMP compositions and method of use
TWI636131B (zh) * 2014-05-20 2018-09-21 日商Ｊｓｒ股份有限公司 清洗用組成物及清洗方法
CN104018170A (zh) * 2014-05-29 2014-09-03 东风汽车紧固件有限公司 一种低温环保无铬除磷化膜剂
JP6350080B2 (ja) * 2014-07-31 2018-07-04 Jsr株式会社 半導体基板洗浄用組成物
CN104818133B (zh) * 2015-03-30 2018-04-27 蓝思科技（长沙）有限公司 一种用于菲林褪镀后脱垢的清洗剂
JP6737436B2 (ja) * 2015-11-10 2020-08-12 株式会社Ｓｃｒｅｅｎホールディングス 膜処理ユニットおよび基板処理装置
US10319605B2 (en) 2016-05-10 2019-06-11 Jsr Corporation Semiconductor treatment composition and treatment method
CN110234719A (zh) * 2017-01-18 2019-09-13 恩特格里斯公司 用于从表面去除氧化铈粒子的组合物和方法
JP7220142B2 (ja) * 2017-03-31 2023-02-09 関東化学株式会社 チタン層またはチタン含有層のエッチング液組成物およびエッチング方法
KR20220118520A (ko) * 2019-12-20 2022-08-25 버슘머트리얼즈 유에스, 엘엘씨 Co/cu 선택적 습식 에칭제
WO2022073178A1 (en) * 2020-10-09 2022-04-14 Henkel Ag & Co. Kgaa Cleaner for electronic device components

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1376307A (zh) * 1999-09-27 2002-10-23 卡伯特微电子公司 化学机械抛光后半导体表面的清洗溶液
CN1419709A (zh) * 2000-03-21 2003-05-21 和光纯药工业株式会社 半导体基板洗涤剂和洗涤方法
US20040161933A1 (en) * 2003-01-10 2004-08-19 Sumitomo Chemical Company, Limited Cleaning solution for semiconductor substrate
TW201122096A (en) * 2009-10-24 2011-07-01 Wai Mun Lee Composition and method for cleaning semiconductor substrates

Family Cites Families (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0641773A (ja) 1992-05-18 1994-02-15 Toshiba Corp 半導体ウェーハ処理液
US5421897A (en) * 1992-07-17 1995-06-06 Grawe; John Abatement process for contaminants
JP3335500B2 (ja) * 1994-08-03 2002-10-15 シャープ株式会社 排水処理装置および排水処理方法
JPH09286999A (ja) * 1996-04-19 1997-11-04 Kanto Chem Co Inc シリコンウェハ洗浄用組成物
JP3219020B2 (ja) 1996-06-05 2001-10-15 和光純薬工業株式会社 洗浄処理剤
TW416987B (en) 1996-06-05 2001-01-01 Wako Pure Chem Ind Ltd A composition for cleaning the semiconductor substrate surface
JP3165801B2 (ja) 1997-08-12 2001-05-14 関東化学株式会社 洗浄液
TW387936B (en) 1997-08-12 2000-04-21 Kanto Kagaku Washing solution
JP3377938B2 (ja) 1997-10-21 2003-02-17 花王株式会社 洗浄剤組成物及び洗浄方法
JP4252130B2 (ja) 1998-07-13 2009-04-08 武藤工業株式会社 インクジェットプリンタにおける細線の階調表現方法
JP2000252250A (ja) * 1999-02-26 2000-09-14 Mitsubishi Gas Chem Co Inc 半導体基板洗浄液およびそれを用いた半導体基板の洗浄方法
JP4516176B2 (ja) 1999-04-20 2010-08-04 関東化学株式会社 電子材料用基板洗浄液
JP2002069495A (ja) * 2000-06-16 2002-03-08 Kao Corp 洗浄剤組成物
KR100867287B1 (ko) * 2000-06-16 2008-11-06 카오카부시키가이샤 세정제 조성물
US6599370B2 (en) * 2000-10-16 2003-07-29 Mallinckrodt Inc. Stabilized alkaline compositions for cleaning microelectronic substrates
JP2002257809A (ja) * 2001-03-06 2002-09-11 Nec Corp テトラメチルアンモニウムハイドロオキサイドの検出方法および装置
MY131912A (en) * 2001-07-09 2007-09-28 Avantor Performance Mat Inc Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility
TWI297102B (en) * 2001-08-03 2008-05-21 Nec Electronics Corp Removing composition
JP2003129089A (ja) * 2001-10-24 2003-05-08 Daikin Ind Ltd 洗浄用組成物
TWI276682B (en) * 2001-11-16 2007-03-21 Mitsubishi Chem Corp Substrate surface cleaning liquid mediums and cleaning method
WO2003104900A2 (en) * 2002-06-07 2003-12-18 Mallinckrodt Baker Inc. Microelectronic cleaning compositions containing oxidizers and organic solvents
JP2004042811A (ja) 2002-07-12 2004-02-12 Denso Corp 車両用空調装置
JP4752270B2 (ja) * 2002-11-08 2011-08-17 和光純薬工業株式会社 洗浄液及びそれを用いた洗浄方法
JP2005101479A (ja) * 2002-11-08 2005-04-14 Sumitomo Chemical Co Ltd 半導体基板用洗浄液
JP4485786B2 (ja) * 2003-01-10 2010-06-23 関東化学株式会社 半導体基板用洗浄液
WO2004094581A1 (en) * 2003-04-18 2004-11-04 Ekc Technology, Inc. Aqueous fluoride compositions for cleaning semiconductor devices
JP2005060660A (ja) * 2003-07-31 2005-03-10 Sumitomo Chemical Co Ltd 半導体基板用洗浄液
US20050205835A1 (en) * 2004-03-19 2005-09-22 Tamboli Dnyanesh C Alkaline post-chemical mechanical planarization cleaning compositions
JP4628209B2 (ja) * 2004-11-18 2011-02-09 花王株式会社 剥離剤組成物
TWI282363B (en) * 2005-05-19 2007-06-11 Epoch Material Co Ltd Aqueous cleaning composition for semiconductor copper processing
SG162725A1 (en) 2005-05-26 2010-07-29 Advanced Tech Materials Copper passivating post-chemical mechanical polishing cleaning composition and method of use
JP5192952B2 (ja) 2007-09-14 2013-05-08 三洋化成工業株式会社 磁気ディスク基板用洗浄剤
JP5192953B2 (ja) 2007-09-14 2013-05-08 三洋化成工業株式会社 磁気ディスク用ガラス基板洗浄剤
JP2009194049A (ja) * 2008-02-13 2009-08-27 Sanyo Chem Ind Ltd 銅配線半導体用洗浄剤
JP5553985B2 (ja) * 2008-12-11 2014-07-23 三洋化成工業株式会社 電子材料用洗浄剤
JP5410943B2 (ja) 2008-12-18 2014-02-05 三洋化成工業株式会社 電子材料用洗浄剤
US8765653B2 (en) 2009-07-07 2014-07-01 Air Products And Chemicals, Inc. Formulations and method for post-CMP cleaning
US8148311B2 (en) * 2009-10-24 2012-04-03 Wai Mun Lee Composition and method for cleaning semiconductor substrates comprising an alkyl diphosphonic acid
JP5401359B2 (ja) * 2010-02-16 2014-01-29 花王株式会社 硬質表面用アルカリ洗浄剤組成物

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1376307A (zh) * 1999-09-27 2002-10-23 卡伯特微电子公司 化学机械抛光后半导体表面的清洗溶液
CN1419709A (zh) * 2000-03-21 2003-05-21 和光纯药工业株式会社 半导体基板洗涤剂和洗涤方法
US20040161933A1 (en) * 2003-01-10 2004-08-19 Sumitomo Chemical Company, Limited Cleaning solution for semiconductor substrate
TW201122096A (en) * 2009-10-24 2011-07-01 Wai Mun Lee Composition and method for cleaning semiconductor substrates

Also Published As

Publication number Publication date
TWI565797B (zh) 2017-01-11
US9334470B2 (en) 2016-05-10
JP6066552B2 (ja) 2017-01-25
JP2013119579A (ja) 2013-06-17
US20130143785A1 (en) 2013-06-06
TW201336985A (zh) 2013-09-16
KR20130063474A (ko) 2013-06-14
EP2602309A1 (en) 2013-06-12
EP2602309B1 (en) 2017-05-03
SG191504A1 (en) 2013-07-31
KR102041624B1 (ko) 2019-11-06
MY165726A (en) 2018-04-20

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