CN103123894A - 交替排列的p型和n型半导体薄层的形成方法 - Google Patents
交替排列的p型和n型半导体薄层的形成方法 Download PDFInfo
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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US6307246B1 (en) * | 1998-07-23 | 2001-10-23 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor resurf devices formed by oblique trench implantation |
US20060163690A1 (en) * | 2003-12-19 | 2006-07-27 | Third Dimension (3D) Semiconductor, Inc. | Semiconductor having thick dielectric regions |
CN1971851A (zh) * | 2005-09-29 | 2007-05-30 | 株式会社电装 | 半导体器件、其制造方法及其评估方法 |
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US6307246B1 (en) * | 1998-07-23 | 2001-10-23 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor resurf devices formed by oblique trench implantation |
US20060163690A1 (en) * | 2003-12-19 | 2006-07-27 | Third Dimension (3D) Semiconductor, Inc. | Semiconductor having thick dielectric regions |
CN1971851A (zh) * | 2005-09-29 | 2007-05-30 | 株式会社电装 | 半导体器件、其制造方法及其评估方法 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20140108 |
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