CN103119694A - 掩蔽材料的去除 - Google Patents

掩蔽材料的去除 Download PDF

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Publication number
CN103119694A
CN103119694A CN2010800629333A CN201080062933A CN103119694A CN 103119694 A CN103119694 A CN 103119694A CN 2010800629333 A CN2010800629333 A CN 2010800629333A CN 201080062933 A CN201080062933 A CN 201080062933A CN 103119694 A CN103119694 A CN 103119694A
Authority
CN
China
Prior art keywords
solution
cerium
acid
ammonium
approximately
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2010800629333A
Other languages
English (en)
Chinese (zh)
Inventor
阿里·阿法扎里-阿达卡尼
托马斯·H·鲍姆
卡尔·E·博格斯
埃马纽尔·I·库珀
道格拉斯·塞沃
马修·科恩
马默德·科加斯泰
罗纳德·W·努内斯
乔治·加布里尔·托蒂尔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Entegris Inc
Original Assignee
Advanced Technology Materials Inc
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12/636,015 external-priority patent/US8367555B2/en
Application filed by Advanced Technology Materials Inc, International Business Machines Corp filed Critical Advanced Technology Materials Inc
Publication of CN103119694A publication Critical patent/CN103119694A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3063—Electrolytic etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Detergent Compositions (AREA)
  • ing And Chemical Polishing (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CN2010800629333A 2009-12-11 2010-12-10 掩蔽材料的去除 Pending CN103119694A (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US12/636,015 US8367555B2 (en) 2009-12-11 2009-12-11 Removal of masking material
US12/636,015 2009-12-11
US35624210P 2010-06-18 2010-06-18
US61/356,242 2010-06-18
PCT/US2010/059800 WO2011072188A2 (fr) 2009-12-11 2010-12-10 Élimination d'une matière de masquage

Publications (1)

Publication Number Publication Date
CN103119694A true CN103119694A (zh) 2013-05-22

Family

ID=44146190

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2010800629333A Pending CN103119694A (zh) 2009-12-11 2010-12-10 掩蔽材料的去除

Country Status (7)

Country Link
EP (1) EP2510538A4 (fr)
JP (1) JP2013513824A (fr)
KR (1) KR20120108984A (fr)
CN (1) CN103119694A (fr)
SG (1) SG181642A1 (fr)
TW (1) TW201140254A (fr)
WO (1) WO2011072188A2 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104487900A (zh) * 2012-05-18 2015-04-01 安格斯公司 用于从包括氮化钛的表面剥离光致抗蚀剂的组合物和方法
CN115066104A (zh) * 2022-07-09 2022-09-16 南通群安电子材料有限公司 针对厚光阻抗蚀剂的剥除液

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012097143A2 (fr) 2011-01-13 2012-07-19 Advanced Technology Materials, Inc. Formulations utilisables en vue de l'élimination de particules produites par des solutions contenant du cérium
US8367556B1 (en) * 2011-12-01 2013-02-05 International Business Machines Corporation Use of an organic planarizing mask for cutting a plurality of gate lines
CN103235491A (zh) * 2013-04-07 2013-08-07 北京七星华创电子股份有限公司 一种抗蚀剂剥离液及其应用
WO2015070168A1 (fr) * 2013-11-11 2015-05-14 Tokyo Electron Limited Procédé et matériel pour l'élimination améliorée de polymère post-gravure et l'élimination de masque dur
TWI595332B (zh) * 2014-08-05 2017-08-11 頎邦科技股份有限公司 光阻剝離方法
CN106435616B (zh) * 2016-10-10 2018-09-07 深圳大学 一种TiNC膜的退镀液及退镀工艺
KR101971459B1 (ko) * 2017-06-05 2019-04-23 재원산업 주식회사 유기발광소자 제조용 도전 부재 세정용 조성물 및 이를 이용한 세정방법
WO2019151001A1 (fr) * 2018-02-05 2019-08-08 富士フイルム株式会社 Procédé de traitement de substrat, procédé de fabrication de dispositif à semi-conducteur, et kit de traitement de substrat

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1231803A (zh) * 1996-09-24 1999-10-13 罗伯特·博施有限公司 无线传输位置信息及有效信息的方法及发射/接收装置
US6162565A (en) * 1998-10-23 2000-12-19 International Business Machines Corporation Dilute acid rinse after develop for chrome etch
US20050282391A1 (en) * 2004-06-16 2005-12-22 Cabot Microelectronics Corporation Method of polishing a tungsten-containing substrate
US20080283090A1 (en) * 2007-05-18 2008-11-20 Dekraker David Process for treatment of substrates with water vapor or steam

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002064101A (ja) * 2000-08-21 2002-02-28 Casio Comput Co Ltd クロム層を有する配線の形成方法
US6599370B2 (en) * 2000-10-16 2003-07-29 Mallinckrodt Inc. Stabilized alkaline compositions for cleaning microelectronic substrates
JP2003017465A (ja) * 2001-06-29 2003-01-17 Mitsubishi Electric Corp 半導体装置の製造方法および半導体装置
JP2008537343A (ja) * 2005-04-15 2008-09-11 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド マイクロエレクトロニクスデバイスからイオン注入フォトレジスト層をクリーニングするための配合物

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1231803A (zh) * 1996-09-24 1999-10-13 罗伯特·博施有限公司 无线传输位置信息及有效信息的方法及发射/接收装置
US6162565A (en) * 1998-10-23 2000-12-19 International Business Machines Corporation Dilute acid rinse after develop for chrome etch
US20050282391A1 (en) * 2004-06-16 2005-12-22 Cabot Microelectronics Corporation Method of polishing a tungsten-containing substrate
US20080283090A1 (en) * 2007-05-18 2008-11-20 Dekraker David Process for treatment of substrates with water vapor or steam

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104487900A (zh) * 2012-05-18 2015-04-01 安格斯公司 用于从包括氮化钛的表面剥离光致抗蚀剂的组合物和方法
CN104487900B (zh) * 2012-05-18 2019-07-23 恩特格里斯公司 用于从包括氮化钛的表面剥离光致抗蚀剂的组合物和方法
CN115066104A (zh) * 2022-07-09 2022-09-16 南通群安电子材料有限公司 针对厚光阻抗蚀剂的剥除液

Also Published As

Publication number Publication date
JP2013513824A (ja) 2013-04-22
KR20120108984A (ko) 2012-10-05
TW201140254A (en) 2011-11-16
EP2510538A4 (fr) 2014-03-26
SG181642A1 (en) 2012-07-30
EP2510538A2 (fr) 2012-10-17
WO2011072188A3 (fr) 2011-09-15
WO2011072188A2 (fr) 2011-06-16

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Legal Events

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C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
ASS Succession or assignment of patent right

Owner name: ANGES INC.

Free format text: FORMER OWNER: ADVANCED TECHNOLOGY MATERIALS, INC.

Effective date: 20150409

C41 Transfer of patent application or patent right or utility model
TA01 Transfer of patent application right

Effective date of registration: 20150409

Address after: Massachusetts, USA

Applicant after: MYKROLIS Corp.

Applicant after: International Business Machines Corp.

Address before: American Connecticut

Applicant before: Advanced Technology Materials, Inc.

Applicant before: International Business Machines Corp.

C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20130522