WO2011072188A3 - Élimination d'une matière de masquage - Google Patents

Élimination d'une matière de masquage Download PDF

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Publication number
WO2011072188A3
WO2011072188A3 PCT/US2010/059800 US2010059800W WO2011072188A3 WO 2011072188 A3 WO2011072188 A3 WO 2011072188A3 US 2010059800 W US2010059800 W US 2010059800W WO 2011072188 A3 WO2011072188 A3 WO 2011072188A3
Authority
WO
WIPO (PCT)
Prior art keywords
masking material
cerium
removal
salt
additional oxidant
Prior art date
Application number
PCT/US2010/059800
Other languages
English (en)
Other versions
WO2011072188A2 (fr
Inventor
Ali Afzali-Ardakani
Thomas H. Baum
Karl E. Boggs
Emanuel I. Cooper
Douglas Cywar
Matthew Kern
Mahmoud Khojasteh
George Gabriel Totir
Original Assignee
Advanced Technology Materials, Inc.
International Business Machines Corporation
Nunes, Ronald W.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12/636,015 external-priority patent/US8367555B2/en
Application filed by Advanced Technology Materials, Inc., International Business Machines Corporation, Nunes, Ronald W. filed Critical Advanced Technology Materials, Inc.
Priority to CN2010800629333A priority Critical patent/CN103119694A/zh
Priority to EP10836729.3A priority patent/EP2510538A4/fr
Priority to JP2012543300A priority patent/JP2013513824A/ja
Priority to SG2012042941A priority patent/SG181642A1/en
Publication of WO2011072188A2 publication Critical patent/WO2011072188A2/fr
Publication of WO2011072188A3 publication Critical patent/WO2011072188A3/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3063—Electrolytic etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • ing And Chemical Polishing (AREA)
  • Detergent Compositions (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

La présente invention porte sur des procédés d'élimination d'une matière de masquage, par exemple, un photorésist, et sur des dispositifs électroniques formés par l'élimination d'une matière de masquage. Par exemple, un procédé pour éliminer une matière de masquage comprend la mise en contact de la matière de masquage avec une solution comprenant du cérium et au moins un oxydant supplémentaire. Le cérium peut être compris dans un sel. Le sel peut être du nitrate de cérium et d'ammonium. Le au moins un oxydant supplémentaire peut être un composé contenant du manganèse, du ruthénium et/ou de l'osmium.
PCT/US2010/059800 2009-12-11 2010-12-10 Élimination d'une matière de masquage WO2011072188A2 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CN2010800629333A CN103119694A (zh) 2009-12-11 2010-12-10 掩蔽材料的去除
EP10836729.3A EP2510538A4 (fr) 2009-12-11 2010-12-10 Élimination d'une matière de masquage
JP2012543300A JP2013513824A (ja) 2009-12-11 2010-12-10 マスキング材料の除去
SG2012042941A SG181642A1 (en) 2009-12-11 2010-12-10 Removal of masking material

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US12/636,015 2009-12-11
US12/636,015 US8367555B2 (en) 2009-12-11 2009-12-11 Removal of masking material
US35624210P 2010-06-18 2010-06-18
US61/356,242 2010-06-18

Publications (2)

Publication Number Publication Date
WO2011072188A2 WO2011072188A2 (fr) 2011-06-16
WO2011072188A3 true WO2011072188A3 (fr) 2011-09-15

Family

ID=44146190

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2010/059800 WO2011072188A2 (fr) 2009-12-11 2010-12-10 Élimination d'une matière de masquage

Country Status (7)

Country Link
EP (1) EP2510538A4 (fr)
JP (1) JP2013513824A (fr)
KR (1) KR20120108984A (fr)
CN (1) CN103119694A (fr)
SG (1) SG181642A1 (fr)
TW (1) TW201140254A (fr)
WO (1) WO2011072188A2 (fr)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012097143A2 (fr) 2011-01-13 2012-07-19 Advanced Technology Materials, Inc. Formulations utilisables en vue de l'élimination de particules produites par des solutions contenant du cérium
US8367556B1 (en) * 2011-12-01 2013-02-05 International Business Machines Corporation Use of an organic planarizing mask for cutting a plurality of gate lines
SG10201610541UA (en) * 2012-05-18 2017-01-27 Entegris Inc Composition and process for stripping photoresist from a surface including titanium nitride
CN103235491A (zh) * 2013-04-07 2013-08-07 北京七星华创电子股份有限公司 一种抗蚀剂剥离液及其应用
TWI667708B (zh) * 2013-11-11 2019-08-01 東京威力科創股份有限公司 蝕刻後聚合物及硬遮罩移除之加強型移除用方法及硬體
TWI595332B (zh) * 2014-08-05 2017-08-11 頎邦科技股份有限公司 光阻剝離方法
CN106435616B (zh) * 2016-10-10 2018-09-07 深圳大学 一种TiNC膜的退镀液及退镀工艺
KR101971459B1 (ko) * 2017-06-05 2019-04-23 재원산업 주식회사 유기발광소자 제조용 도전 부재 세정용 조성물 및 이를 이용한 세정방법
WO2019151001A1 (fr) * 2018-02-05 2019-08-08 富士フイルム株式会社 Procédé de traitement de substrat, procédé de fabrication de dispositif à semi-conducteur, et kit de traitement de substrat
CN115066104A (zh) * 2022-07-09 2022-09-16 南通群安电子材料有限公司 针对厚光阻抗蚀剂的剥除液

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6162565A (en) * 1998-10-23 2000-12-19 International Business Machines Corporation Dilute acid rinse after develop for chrome etch
JP2002064101A (ja) * 2000-08-21 2002-02-28 Casio Comput Co Ltd クロム層を有する配線の形成方法
US20020077259A1 (en) * 2000-10-16 2002-06-20 Skee David C. Stabilized alkaline compositions for cleaning microlelectronic substrates
US20030003754A1 (en) * 2001-06-29 2003-01-02 Mitsubishi Denki Kabushiki Kaisha Method of fabricating semiconductor device and semiconductor device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19639093A1 (de) * 1996-09-24 1998-03-26 Bosch Gmbh Robert Verfahren zur drahtlosen Übertragung von Ortsinformationen und Nutzinformationen und Sende-/Empfangseinrichtung
US7247567B2 (en) * 2004-06-16 2007-07-24 Cabot Microelectronics Corporation Method of polishing a tungsten-containing substrate
JP2008537343A (ja) * 2005-04-15 2008-09-11 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド マイクロエレクトロニクスデバイスからイオン注入フォトレジスト層をクリーニングするための配合物
CN102623328B (zh) * 2007-05-18 2014-11-26 Fsi国际公司 用水蒸气或蒸汽处理基材的方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6162565A (en) * 1998-10-23 2000-12-19 International Business Machines Corporation Dilute acid rinse after develop for chrome etch
JP2002064101A (ja) * 2000-08-21 2002-02-28 Casio Comput Co Ltd クロム層を有する配線の形成方法
US20020077259A1 (en) * 2000-10-16 2002-06-20 Skee David C. Stabilized alkaline compositions for cleaning microlelectronic substrates
US20030003754A1 (en) * 2001-06-29 2003-01-02 Mitsubishi Denki Kabushiki Kaisha Method of fabricating semiconductor device and semiconductor device

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2510538A4 *

Also Published As

Publication number Publication date
CN103119694A (zh) 2013-05-22
EP2510538A4 (fr) 2014-03-26
WO2011072188A2 (fr) 2011-06-16
TW201140254A (en) 2011-11-16
EP2510538A2 (fr) 2012-10-17
KR20120108984A (ko) 2012-10-05
JP2013513824A (ja) 2013-04-22
SG181642A1 (en) 2012-07-30

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