CN103091978B - 通过负性显影形成光刻图形的方法 - Google Patents
通过负性显影形成光刻图形的方法 Download PDFInfo
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- CN103091978B CN103091978B CN201210597633.6A CN201210597633A CN103091978B CN 103091978 B CN103091978 B CN 103091978B CN 201210597633 A CN201210597633 A CN 201210597633A CN 103091978 B CN103091978 B CN 103091978B
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- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
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- Architecture (AREA)
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- Medicinal Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Computer Hardware Design (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Materials For Photolithography (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
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US201161555462P | 2011-11-03 | 2011-11-03 | |
US61/555,462 | 2011-11-03 |
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US20130302735A1 (en) * | 2011-11-03 | 2013-11-14 | Rohm And Haas Electronic Materials Llc | Monomers, polymers and photoresist compositions |
KR102233875B1 (ko) * | 2013-12-30 | 2021-03-30 | 롬엔드하스전자재료코리아유한회사 | 광산 발생제를 포함하는 반사방지 코팅 조성물을 이용한 패턴 형성 방법 |
JP6267533B2 (ja) | 2014-02-14 | 2018-01-24 | 信越化学工業株式会社 | パターン形成方法 |
JPWO2015122468A1 (ja) * | 2014-02-14 | 2017-03-30 | 三菱瓦斯化学株式会社 | (メタ)アクリル酸エステル化合物およびその製造方法 |
US9472448B2 (en) * | 2014-03-14 | 2016-10-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Contact plug without seam hole and methods of forming the same |
KR102245135B1 (ko) | 2014-05-20 | 2021-04-28 | 삼성전자 주식회사 | 패턴 형성 방법 및 이를 이용한 집적회로 소자의 제조 방법 |
JP2017521715A (ja) * | 2014-07-08 | 2017-08-03 | 東京エレクトロン株式会社 | ネガティブトーン現像剤相溶性フォトレジスト組成物及び使用方法 |
US11092894B2 (en) | 2014-12-31 | 2021-08-17 | Rohm And Haas Electronic Materials Korea Ltd. | Method for forming pattern using anti-reflective coating composition comprising photoacid generator |
KR102374049B1 (ko) | 2015-06-02 | 2022-03-14 | 삼성전자주식회사 | 포토레지스트를 이용한 패턴 형성 방법 |
US10061199B2 (en) * | 2015-06-24 | 2018-08-28 | Tokyo Electron Limited | Methods of forming a mask for substrate patterning |
US9685507B2 (en) | 2015-06-25 | 2017-06-20 | International Business Machines Corporation | FinFET devices |
US10211051B2 (en) * | 2015-11-13 | 2019-02-19 | Canon Kabushiki Kaisha | Method of reverse tone patterning |
TWI587093B (zh) * | 2016-04-11 | 2017-06-11 | 台灣積體電路製造股份有限公司 | 三層型光阻結構和其製造方法 |
CN106784398B (zh) * | 2016-12-15 | 2019-12-03 | 武汉华星光电技术有限公司 | Oled封装方法与oled封装结构 |
US10727055B2 (en) * | 2017-02-10 | 2020-07-28 | International Business Machines Corporation | Method to increase the lithographic process window of extreme ultra violet negative tone development resists |
JP6937648B2 (ja) * | 2017-09-28 | 2021-09-22 | 東京応化工業株式会社 | レジスト組成物及びレジストパターン形成方法 |
CN107799402A (zh) * | 2017-10-24 | 2018-03-13 | 德淮半导体有限公司 | 二次图形的形成方法 |
CN109679020B (zh) * | 2018-12-28 | 2020-12-29 | 厦门恒坤新材料科技股份有限公司 | 含立方烷的丙烯酸酯系成膜树脂和ArF光刻胶及其制备方法和光刻方法 |
CN115699255A (zh) | 2020-07-02 | 2023-02-03 | 应用材料公司 | 用于光刻应用的光刻胶层上的碳的选择性沉积 |
CN112129237B (zh) * | 2020-08-17 | 2022-05-20 | 江苏大学 | 基于石英晶体微天平评估光刻胶光刻效率的方法 |
US11656550B2 (en) * | 2020-09-01 | 2023-05-23 | Tokyo Electron Limited | Controlling semiconductor film thickness |
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JP2715881B2 (ja) | 1993-12-28 | 1998-02-18 | 日本電気株式会社 | 感光性樹脂組成物およびパターン形成方法 |
JP2002193895A (ja) | 2000-12-27 | 2002-07-10 | Daicel Chem Ind Ltd | 環式骨格を有する3−アクリロイルオキシプロピオン酸エステル誘導体、及びアクリル酸エステル混合物 |
JP2002221796A (ja) | 2001-01-26 | 2002-08-09 | Fuji Photo Film Co Ltd | ポジ型感光性樹脂組成物 |
JP4474246B2 (ja) | 2003-09-19 | 2010-06-02 | 富士フイルム株式会社 | ポジ型レジスト組成物及びそれを用いたパターン形成方法 |
JP4622579B2 (ja) | 2004-04-23 | 2011-02-02 | 住友化学株式会社 | 化学増幅型ポジ型レジスト組成物及び(メタ)アクリル酸誘導体とその製法 |
WO2005108343A1 (ja) | 2004-05-10 | 2005-11-17 | Idemitsu Kosan Co., Ltd. | アダマンタン誘導体、その製造方法及びフォトレジスト用感光材料 |
JP4991326B2 (ja) * | 2006-01-24 | 2012-08-01 | 富士フイルム株式会社 | ポジ型感光性組成物及びそれを用いたパターン形成方法 |
US8034547B2 (en) | 2007-04-13 | 2011-10-11 | Fujifilm Corporation | Pattern forming method, resist composition to be used in the pattern forming method, negative developing solution to be used in the pattern forming method and rinsing solution for negative development to be used in the pattern forming method |
JP4982288B2 (ja) * | 2007-04-13 | 2012-07-25 | 富士フイルム株式会社 | パターン形成方法 |
JP5337579B2 (ja) * | 2008-12-04 | 2013-11-06 | 東京応化工業株式会社 | ポジ型レジスト組成物、レジストパターン形成方法 |
WO2011026036A1 (en) | 2009-08-28 | 2011-03-03 | Inova Diagnostics, Inc. | Detecting circulating cartilage oligomeric matrix protein in liver cirrhosis |
WO2011034007A1 (ja) | 2009-09-16 | 2011-03-24 | Jsr株式会社 | 感放射線性樹脂組成物及びレジストパターン形成方法 |
JP5440468B2 (ja) * | 2010-01-20 | 2014-03-12 | 信越化学工業株式会社 | パターン形成方法 |
JP5775701B2 (ja) | 2010-02-26 | 2015-09-09 | 富士フイルム株式会社 | パターン形成方法及びレジスト組成物 |
IL211532A0 (en) | 2010-03-05 | 2011-06-30 | Rohm & Haas Elect Mat | Methods of forming photolithographic patterns |
JP2011227463A (ja) * | 2010-03-30 | 2011-11-10 | Jsr Corp | 感放射線性樹脂組成物およびパターン形成方法 |
WO2011122336A1 (ja) * | 2010-03-30 | 2011-10-06 | Jsr株式会社 | 感放射線性樹脂組成物およびパターン形成方法 |
JP5557625B2 (ja) * | 2010-06-30 | 2014-07-23 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物並びに該組成物を用いたレジスト膜及びパターン形成方法 |
JP5685919B2 (ja) * | 2010-12-13 | 2015-03-18 | Jsr株式会社 | 感放射線性樹脂組成物及びレジストパターン形成方法 |
US20130302735A1 (en) | 2011-11-03 | 2013-11-14 | Rohm And Haas Electronic Materials Llc | Monomers, polymers and photoresist compositions |
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JP2013137513A (ja) | 2013-07-11 |
JP6118538B2 (ja) | 2017-04-19 |
KR20130049165A (ko) | 2013-05-13 |
TWI477907B (zh) | 2015-03-21 |
TW201327046A (zh) | 2013-07-01 |
US20130115559A1 (en) | 2013-05-09 |
CN103091978A (zh) | 2013-05-08 |
KR102065932B1 (ko) | 2020-01-14 |
US8790867B2 (en) | 2014-07-29 |
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