CN103081088B - 静电夹盘和使用静电夹盘的方法 - Google Patents

静电夹盘和使用静电夹盘的方法 Download PDF

Info

Publication number
CN103081088B
CN103081088B CN201180042581.XA CN201180042581A CN103081088B CN 103081088 B CN103081088 B CN 103081088B CN 201180042581 A CN201180042581 A CN 201180042581A CN 103081088 B CN103081088 B CN 103081088B
Authority
CN
China
Prior art keywords
control plate
substrate
electrode
thermal control
disk
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201180042581.XA
Other languages
English (en)
Chinese (zh)
Other versions
CN103081088A (zh
Inventor
尚布休·N·罗伊
马丁·李·莱克
基思·A·米勒
维贾伊·D·帕克赫
史蒂芬·V·桑索尼
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of CN103081088A publication Critical patent/CN103081088A/zh
Application granted granted Critical
Publication of CN103081088B publication Critical patent/CN103081088B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23QDETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
    • B23Q3/00Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
    • B23Q3/15Devices for holding work using magnetic or electric force acting directly on the work
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • H01L21/67109Apparatus for thermal treatment mainly by convection
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • H01L21/67103Apparatus for thermal treatment mainly by conduction
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Jigs For Machine Tools (AREA)
  • Physical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
CN201180042581.XA 2010-08-06 2011-08-04 静电夹盘和使用静电夹盘的方法 Active CN103081088B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US37145510P 2010-08-06 2010-08-06
US61/371,455 2010-08-06
US13/198,204 US8559159B2 (en) 2010-08-06 2011-08-04 Electrostatic chuck and methods of use thereof
US13/198,204 2011-08-04
PCT/US2011/046611 WO2012019017A2 (en) 2010-08-06 2011-08-04 Electrostatic chuck and methods of use thereof

Publications (2)

Publication Number Publication Date
CN103081088A CN103081088A (zh) 2013-05-01
CN103081088B true CN103081088B (zh) 2016-04-06

Family

ID=45556003

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201180042581.XA Active CN103081088B (zh) 2010-08-06 2011-08-04 静电夹盘和使用静电夹盘的方法

Country Status (5)

Country Link
US (1) US8559159B2 (enExample)
JP (1) JP6195519B2 (enExample)
KR (1) KR101892911B1 (enExample)
CN (1) CN103081088B (enExample)
WO (1) WO2012019017A2 (enExample)

Families Citing this family (63)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8519729B2 (en) * 2010-02-10 2013-08-27 Sunpower Corporation Chucks for supporting solar cell in hot spot testing
JP5948026B2 (ja) * 2011-08-17 2016-07-06 東京エレクトロン株式会社 半導体製造装置及び処理方法
US10586686B2 (en) 2011-11-22 2020-03-10 Law Research Corporation Peripheral RF feed and symmetric RF return for symmetric RF delivery
US10276410B2 (en) 2011-11-25 2019-04-30 Nhk Spring Co., Ltd. Substrate support device
US9153463B2 (en) * 2011-11-25 2015-10-06 Nhk Spring Co., Ltd. Substrate support device
US10049948B2 (en) * 2012-11-30 2018-08-14 Lam Research Corporation Power switching system for ESC with array of thermal control elements
WO2015013143A1 (en) 2013-07-22 2015-01-29 Applied Materials, Inc. An end effector for transferring a substrate
WO2015013142A1 (en) 2013-07-22 2015-01-29 Applied Materials, Inc. An electrostatic chuck for high temperature process applications
CN110085546B (zh) * 2013-08-05 2023-05-16 应用材料公司 用于薄基板搬运的静电载体
JP6441927B2 (ja) 2013-08-06 2018-12-19 アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated 局部的に加熱されるマルチゾーン式の基板支持体
US9101038B2 (en) 2013-12-20 2015-08-04 Lam Research Corporation Electrostatic chuck including declamping electrode and method of declamping
CN103871932A (zh) * 2014-03-17 2014-06-18 上海华虹宏力半导体制造有限公司 光阻加固设备及微粒污染排除方法
CN104157547A (zh) * 2014-08-26 2014-11-19 上海先进半导体制造股份有限公司 深槽刻蚀设备的静电释放方法
DE102014114096A1 (de) 2014-09-29 2016-03-31 Danfoss Silicon Power Gmbh Sinterwerkzeug für den Unterstempel einer Sintervorrichtung
DE102014114093B4 (de) 2014-09-29 2017-03-23 Danfoss Silicon Power Gmbh Verfahren zum Niedertemperatur-Drucksintern
DE102014114097B4 (de) 2014-09-29 2017-06-01 Danfoss Silicon Power Gmbh Sinterwerkzeug und Verfahren zum Sintern einer elektronischen Baugruppe
US10002782B2 (en) 2014-10-17 2018-06-19 Lam Research Corporation ESC assembly including an electrically conductive gasket for uniform RF power delivery therethrough
US10008404B2 (en) 2014-10-17 2018-06-26 Applied Materials, Inc. Electrostatic chuck assembly for high temperature processes
WO2016094404A1 (en) * 2014-12-11 2016-06-16 Applied Materials, Inc. Electrostatic chuck for high temperature rf applications
US20160289827A1 (en) * 2015-03-31 2016-10-06 Lam Research Corporation Plasma processing systems and structures having sloped confinement rings
WO2016159705A1 (ko) * 2015-04-01 2016-10-06 (주)브이앤아이솔루션 얼라이너 구조 및 얼라인 방법
US10008399B2 (en) 2015-05-19 2018-06-26 Applied Materials, Inc. Electrostatic puck assembly with metal bonded backing plate for high temperature processes
KR102467055B1 (ko) * 2015-10-13 2022-11-15 세메스 주식회사 지지 유닛 및 이를 포함하는 베이크 장치
JP6586345B2 (ja) * 2015-10-23 2019-10-02 日本特殊陶業株式会社 基板保持装置
US10249526B2 (en) * 2016-03-04 2019-04-02 Applied Materials, Inc. Substrate support assembly for high temperature processes
US11532497B2 (en) * 2016-06-07 2022-12-20 Applied Materials, Inc. High power electrostatic chuck design with radio frequency coupling
US10410900B2 (en) 2016-08-05 2019-09-10 Applied Materials, Inc. Precision screen printing with sub-micron uniformity of metallization materials on green sheet ceramic
USD836572S1 (en) 2016-09-30 2018-12-25 Applied Materials, Inc. Target profile for a physical vapor deposition chamber target
CN118412315A (zh) * 2017-06-16 2024-07-30 周星工程股份有限公司 基板处理装置和用于真空的旋转电连接器
CN107093545B (zh) * 2017-06-19 2019-05-31 北京北方华创微电子装备有限公司 反应腔室的下电极机构及反应腔室
US20190043698A1 (en) * 2017-08-03 2019-02-07 Applied Materials, Inc. Electrostatic shield for substrate support
USD851613S1 (en) 2017-10-05 2019-06-18 Applied Materials, Inc. Target profile for a physical vapor deposition chamber target
USD868124S1 (en) * 2017-12-11 2019-11-26 Applied Materials, Inc. Target profile for a physical vapor deposition chamber target
US11149345B2 (en) * 2017-12-11 2021-10-19 Applied Materials, Inc. Cryogenically cooled rotatable electrostatic chuck
CN108054074A (zh) * 2018-01-11 2018-05-18 北京北方华创微电子装备有限公司 一种基座以及包括该基座的半导体处理设备
USD877101S1 (en) 2018-03-09 2020-03-03 Applied Materials, Inc. Target profile for a physical vapor deposition chamber target
US10957572B2 (en) 2018-05-02 2021-03-23 Applied Materials, Inc. Multi-zone gasket for substrate support assembly
WO2020182637A1 (en) * 2019-03-13 2020-09-17 Asml Holding N.V. Electrostatic clamp for a lithographic apparatus
US11189516B2 (en) 2019-05-24 2021-11-30 Applied Materials, Inc. Method for mask and substrate alignment
US11538706B2 (en) 2019-05-24 2022-12-27 Applied Materials, Inc. System and method for aligning a mask with a substrate
USD908645S1 (en) 2019-08-26 2021-01-26 Applied Materials, Inc. Sputtering target for a physical vapor deposition chamber
JP7313254B2 (ja) * 2019-10-11 2023-07-24 日本特殊陶業株式会社 保持装置
WO2021155531A1 (en) 2020-02-06 2021-08-12 Applied Materials, Inc. Method and apparatus for tuning film properties during thin film deposition
USD937329S1 (en) 2020-03-23 2021-11-30 Applied Materials, Inc. Sputter target for a physical vapor deposition chamber
US11335543B2 (en) * 2020-03-25 2022-05-17 Applied Materials, Inc. RF return path for reduction of parasitic plasma
US11615966B2 (en) 2020-07-19 2023-03-28 Applied Materials, Inc. Flowable film formation and treatments
US12020957B2 (en) * 2020-08-31 2024-06-25 Applied Materials, Inc. Heater assembly with process gap control for batch processing chambers
US12142459B2 (en) 2020-09-08 2024-11-12 Applied Materials, Inc. Single chamber flowable film formation and treatments
US11699571B2 (en) 2020-09-08 2023-07-11 Applied Materials, Inc. Semiconductor processing chambers for deposition and etch
US11887811B2 (en) * 2020-09-08 2024-01-30 Applied Materials, Inc. Semiconductor processing chambers for deposition and etch
USD940765S1 (en) 2020-12-02 2022-01-11 Applied Materials, Inc. Target profile for a physical vapor deposition chamber target
USD1072774S1 (en) 2021-02-06 2025-04-29 Applied Materials, Inc. Target profile for a physical vapor deposition chamber target
US11881423B2 (en) * 2021-02-09 2024-01-23 Applied Materials, Inc. Electrostatic chuck with metal bond
USD1007449S1 (en) 2021-05-07 2023-12-12 Applied Materials, Inc. Target profile for a physical vapor deposition chamber target
KR102615217B1 (ko) * 2021-08-24 2023-12-15 세메스 주식회사 정전 척을 포함하는 기판 처리 장치와 기판 처리 방법 및 정전 척 제조 방법
JP7569772B2 (ja) * 2021-10-07 2024-10-18 日本碍子株式会社 半導体製造装置用部材
US12014906B2 (en) 2021-11-19 2024-06-18 Applied Materials, Inc. High temperature detachable very high frequency (VHF) electrostatic chuck (ESC) for PVD chamber
KR102396865B1 (ko) * 2021-12-08 2022-05-12 주식회사 미코세라믹스 정전척
USD1053230S1 (en) 2022-05-19 2024-12-03 Applied Materials, Inc. Sputter target for a physical vapor deposition chamber
EP4599483A1 (en) * 2022-10-03 2025-08-13 Elevated Materials Germany GmbH Web coating method and vented cooling drum with integral electrostatic clamping
US20240266200A1 (en) * 2023-02-08 2024-08-08 Applied Materials, Inc. Electrostatic Chuck
CN116496701A (zh) * 2023-04-21 2023-07-28 浙江新纳陶瓷新材有限公司 一种陶瓷盘的粘接方法
US20250015733A1 (en) * 2023-07-06 2025-01-09 Applied Materials, Inc. Finger Electrostatic Chuck for High Resistance Substrate Chucking

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7457098B2 (en) * 2003-01-29 2008-11-25 Kyocera Corporation Electrostatic chuck

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3596127B2 (ja) * 1995-12-04 2004-12-02 ソニー株式会社 静電チャック、薄板保持装置、半導体製造装置、搬送方法及び半導体の製造方法
JP2002009064A (ja) * 2000-06-21 2002-01-11 Hitachi Ltd 試料の処理装置及び試料の処理方法
JP3978714B2 (ja) * 2002-02-26 2007-09-19 ジーイー・スペシャルティ・マテリアルズ・ジャパン株式会社 静電チャックの製造方法
JP3881908B2 (ja) * 2002-02-26 2007-02-14 株式会社日立ハイテクノロジーズ プラズマ処理装置
US6875927B2 (en) * 2002-03-08 2005-04-05 Applied Materials, Inc. High temperature DC chucking and RF biasing cable with high voltage isolation for biasable electrostatic chuck applications
JP4346877B2 (ja) * 2002-08-29 2009-10-21 東京エレクトロン株式会社 静電吸着装置および処理装置
DE102005056364B3 (de) * 2005-11-25 2007-08-16 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Bipolarer Trägerwafer und mobile, bipolare, elektrostatische Waferanordnung
JP2007242913A (ja) * 2006-03-09 2007-09-20 Hitachi High-Technologies Corp 試料載置電極及びそれを用いたプラズマ処理装置
US7297894B1 (en) * 2006-09-25 2007-11-20 Tokyo Electron Limited Method for multi-step temperature control of a substrate
JP2007150351A (ja) * 2007-02-15 2007-06-14 Toto Ltd 静電チャック
JP4903610B2 (ja) * 2007-03-27 2012-03-28 東京エレクトロン株式会社 プラズマ処理装置
JP4782733B2 (ja) * 2007-06-12 2011-09-28 東京エレクトロン株式会社 載置台およびそれを用いたプラズマ処理装置
JP2009054932A (ja) * 2007-08-29 2009-03-12 Shinko Electric Ind Co Ltd 静電チャック
JP4450106B1 (ja) * 2008-03-11 2010-04-14 東京エレクトロン株式会社 載置台構造及び処理装置
US20100014208A1 (en) * 2008-07-10 2010-01-21 Canon Anleva Corporation Substrate holder
US8194384B2 (en) * 2008-07-23 2012-06-05 Tokyo Electron Limited High temperature electrostatic chuck and method of using
US20100018648A1 (en) * 2008-07-23 2010-01-28 Applied Marterials, Inc. Workpiece support for a plasma reactor with controlled apportionment of rf power to a process kit ring
JP5163349B2 (ja) * 2008-08-01 2013-03-13 住友大阪セメント株式会社 静電チャック装置
JP2011530833A (ja) * 2008-08-12 2011-12-22 アプライド マテリアルズ インコーポレイテッド 静電チャックアセンブリ
US7929269B2 (en) 2008-09-04 2011-04-19 Momentive Performance Materials Inc. Wafer processing apparatus having a tunable electrical resistivity
US20100247804A1 (en) 2009-03-24 2010-09-30 Applied Materials, Inc. Biasable cooling pedestal

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7457098B2 (en) * 2003-01-29 2008-11-25 Kyocera Corporation Electrostatic chuck

Also Published As

Publication number Publication date
WO2012019017A3 (en) 2012-05-31
US8559159B2 (en) 2013-10-15
JP6195519B2 (ja) 2017-09-13
WO2012019017A2 (en) 2012-02-09
JP2013535842A (ja) 2013-09-12
KR101892911B1 (ko) 2018-08-29
US20120033340A1 (en) 2012-02-09
KR20140004062A (ko) 2014-01-10
CN103081088A (zh) 2013-05-01

Similar Documents

Publication Publication Date Title
CN103081088B (zh) 静电夹盘和使用静电夹盘的方法
CN100550271C (zh) 用于半导体处理反应器的喷头电极设计
JP4481913B2 (ja) 基板ペデスタルアッセンブリ及び処理チャンバー
CN105027274B (zh) 用于沉积腔室的基板支撑夹盘冷却
EP3369109B1 (en) Biasable rotatable electrostatic chuck
KR102516133B1 (ko) 후면 가스 공급부를 갖는 회전가능 정전 척
CN101989544B (zh) 一种可减少基片背面聚合物的结构
TW201528424A (zh) 可旋轉加熱靜電夾盤
KR20110049867A (ko) 정전 척 조립체
CN110120329A (zh) 等离子体处理装置
TWI861442B (zh) 用於半導體加工的高熱量損失加熱器與靜電卡盤
US12014906B2 (en) High temperature detachable very high frequency (VHF) electrostatic chuck (ESC) for PVD chamber
CN101937860A (zh) 静电吸盘
CN115053323A (zh) 用于衬底处理的静电边缘环安置系统
CN113169111A (zh) 具有改良的热耦合以用于热敏感处理的静电吸盘
TW202230446A (zh) 用於限制直流放電的雙極靜電卡緊
TW202514902A (zh) 用於改良熱性能與漏電流穩定性之具有混成圓盤的靜電吸盤
TWI881416B (zh) 用於靜電卡緊真空密封

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant