JP6195519B2 - 静電チャック及びその使用方法 - Google Patents

静電チャック及びその使用方法 Download PDF

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Publication number
JP6195519B2
JP6195519B2 JP2013524119A JP2013524119A JP6195519B2 JP 6195519 B2 JP6195519 B2 JP 6195519B2 JP 2013524119 A JP2013524119 A JP 2013524119A JP 2013524119 A JP2013524119 A JP 2013524119A JP 6195519 B2 JP6195519 B2 JP 6195519B2
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JP
Japan
Prior art keywords
disk
control plate
substrate
electrostatic chuck
thermal control
Prior art date
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Active
Application number
JP2013524119A
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English (en)
Japanese (ja)
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JP2013535842A5 (enExample
JP2013535842A (ja
Inventor
シャンブ エヌ ロイ
シャンブ エヌ ロイ
マーティン リー ライカー
マーティン リー ライカー
キース エイ ミラー
キース エイ ミラー
ヴィジャイ ディー パルケ
ヴィジャイ ディー パルケ
スティーヴン ヴィー サンソーニ
スティーヴン ヴィー サンソーニ
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Applied Materials Inc
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Applied Materials Inc
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Publication of JP2013535842A publication Critical patent/JP2013535842A/ja
Publication of JP2013535842A5 publication Critical patent/JP2013535842A5/ja
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Publication of JP6195519B2 publication Critical patent/JP6195519B2/ja
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
    • B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
    • B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Jigs For Machine Tools (AREA)
  • Physical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
JP2013524119A 2010-08-06 2011-08-04 静電チャック及びその使用方法 Active JP6195519B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US37145510P 2010-08-06 2010-08-06
US61/371,455 2010-08-06
PCT/US2011/046611 WO2012019017A2 (en) 2010-08-06 2011-08-04 Electrostatic chuck and methods of use thereof
US13/198,204 2011-08-04
US13/198,204 US8559159B2 (en) 2010-08-06 2011-08-04 Electrostatic chuck and methods of use thereof

Publications (3)

Publication Number Publication Date
JP2013535842A JP2013535842A (ja) 2013-09-12
JP2013535842A5 JP2013535842A5 (enExample) 2014-09-18
JP6195519B2 true JP6195519B2 (ja) 2017-09-13

Family

ID=45556003

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013524119A Active JP6195519B2 (ja) 2010-08-06 2011-08-04 静電チャック及びその使用方法

Country Status (5)

Country Link
US (1) US8559159B2 (enExample)
JP (1) JP6195519B2 (enExample)
KR (1) KR101892911B1 (enExample)
CN (1) CN103081088B (enExample)
WO (1) WO2012019017A2 (enExample)

Families Citing this family (63)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8519729B2 (en) * 2010-02-10 2013-08-27 Sunpower Corporation Chucks for supporting solar cell in hot spot testing
JP5948026B2 (ja) 2011-08-17 2016-07-06 東京エレクトロン株式会社 半導体製造装置及び処理方法
US10586686B2 (en) 2011-11-22 2020-03-10 Law Research Corporation Peripheral RF feed and symmetric RF return for symmetric RF delivery
US9153463B2 (en) * 2011-11-25 2015-10-06 Nhk Spring Co., Ltd. Substrate support device
US10276410B2 (en) 2011-11-25 2019-04-30 Nhk Spring Co., Ltd. Substrate support device
US10049948B2 (en) 2012-11-30 2018-08-14 Lam Research Corporation Power switching system for ESC with array of thermal control elements
WO2015013142A1 (en) 2013-07-22 2015-01-29 Applied Materials, Inc. An electrostatic chuck for high temperature process applications
WO2015013143A1 (en) 2013-07-22 2015-01-29 Applied Materials, Inc. An end effector for transferring a substrate
KR102139682B1 (ko) * 2013-08-05 2020-07-30 어플라이드 머티어리얼스, 인코포레이티드 얇은 기판 취급을 위한 정전 캐리어
KR20180110213A (ko) 2013-08-06 2018-10-08 어플라이드 머티어리얼스, 인코포레이티드 국부적으로 가열되는 다-구역 기판 지지부
US9101038B2 (en) 2013-12-20 2015-08-04 Lam Research Corporation Electrostatic chuck including declamping electrode and method of declamping
CN103871932A (zh) * 2014-03-17 2014-06-18 上海华虹宏力半导体制造有限公司 光阻加固设备及微粒污染排除方法
CN104157547A (zh) * 2014-08-26 2014-11-19 上海先进半导体制造股份有限公司 深槽刻蚀设备的静电释放方法
DE102014114093B4 (de) 2014-09-29 2017-03-23 Danfoss Silicon Power Gmbh Verfahren zum Niedertemperatur-Drucksintern
DE102014114096A1 (de) 2014-09-29 2016-03-31 Danfoss Silicon Power Gmbh Sinterwerkzeug für den Unterstempel einer Sintervorrichtung
DE102014114097B4 (de) 2014-09-29 2017-06-01 Danfoss Silicon Power Gmbh Sinterwerkzeug und Verfahren zum Sintern einer elektronischen Baugruppe
US10002782B2 (en) 2014-10-17 2018-06-19 Lam Research Corporation ESC assembly including an electrically conductive gasket for uniform RF power delivery therethrough
US10008404B2 (en) * 2014-10-17 2018-06-26 Applied Materials, Inc. Electrostatic chuck assembly for high temperature processes
JP6796066B2 (ja) * 2014-12-11 2020-12-02 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 高温ｒｆ用途のための静電チャック
US20160289827A1 (en) * 2015-03-31 2016-10-06 Lam Research Corporation Plasma processing systems and structures having sloped confinement rings
JP6582059B2 (ja) * 2015-04-01 2019-09-25 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ アライナ構造及びアライン方法
US10008399B2 (en) 2015-05-19 2018-06-26 Applied Materials, Inc. Electrostatic puck assembly with metal bonded backing plate for high temperature processes
KR102467055B1 (ko) * 2015-10-13 2022-11-15 세메스 주식회사 지지 유닛 및 이를 포함하는 베이크 장치
JP6586345B2 (ja) * 2015-10-23 2019-10-02 日本特殊陶業株式会社 基板保持装置
US10249526B2 (en) * 2016-03-04 2019-04-02 Applied Materials, Inc. Substrate support assembly for high temperature processes
US11532497B2 (en) * 2016-06-07 2022-12-20 Applied Materials, Inc. High power electrostatic chuck design with radio frequency coupling
US10410900B2 (en) 2016-08-05 2019-09-10 Applied Materials, Inc. Precision screen printing with sub-micron uniformity of metallization materials on green sheet ceramic
USD836572S1 (en) 2016-09-30 2018-12-25 Applied Materials, Inc. Target profile for a physical vapor deposition chamber target
JP7208168B2 (ja) * 2017-06-16 2023-01-18 チュソン エンジニアリング カンパニー，リミテッド 基板処理装置及び真空回転電気コネクタ
CN107093545B (zh) * 2017-06-19 2019-05-31 北京北方华创微电子装备有限公司 反应腔室的下电极机构及反应腔室
US20190043698A1 (en) * 2017-08-03 2019-02-07 Applied Materials, Inc. Electrostatic shield for substrate support
USD851613S1 (en) 2017-10-05 2019-06-18 Applied Materials, Inc. Target profile for a physical vapor deposition chamber target
USD868124S1 (en) * 2017-12-11 2019-11-26 Applied Materials, Inc. Target profile for a physical vapor deposition chamber target
US11149345B2 (en) * 2017-12-11 2021-10-19 Applied Materials, Inc. Cryogenically cooled rotatable electrostatic chuck
CN108054074A (zh) * 2018-01-11 2018-05-18 北京北方华创微电子装备有限公司 一种基座以及包括该基座的半导体处理设备
USD877101S1 (en) 2018-03-09 2020-03-03 Applied Materials, Inc. Target profile for a physical vapor deposition chamber target
US10957572B2 (en) 2018-05-02 2021-03-23 Applied Materials, Inc. Multi-zone gasket for substrate support assembly
US20220146948A1 (en) * 2019-03-13 2022-05-12 Asml Holding N.V. Electrostatic clamp for a lithographic apparatus
WO2020242611A1 (en) 2019-05-24 2020-12-03 Applied Materials, Inc. System and method for aligning a mask with a substrate
US11189516B2 (en) 2019-05-24 2021-11-30 Applied Materials, Inc. Method for mask and substrate alignment
USD908645S1 (en) 2019-08-26 2021-01-26 Applied Materials, Inc. Sputtering target for a physical vapor deposition chamber
JP7313254B2 (ja) * 2019-10-11 2023-07-24 日本特殊陶業株式会社 保持装置
JP7668806B2 (ja) 2020-02-06 2025-04-25 アプライド マテリアルズ インコーポレイテッド 薄膜堆積中に膜特性を調整するための方法及び装置
USD937329S1 (en) 2020-03-23 2021-11-30 Applied Materials, Inc. Sputter target for a physical vapor deposition chamber
US11335543B2 (en) * 2020-03-25 2022-05-17 Applied Materials, Inc. RF return path for reduction of parasitic plasma
US11615966B2 (en) 2020-07-19 2023-03-28 Applied Materials, Inc. Flowable film formation and treatments
US12020957B2 (en) * 2020-08-31 2024-06-25 Applied Materials, Inc. Heater assembly with process gap control for batch processing chambers
US12142459B2 (en) 2020-09-08 2024-11-12 Applied Materials, Inc. Single chamber flowable film formation and treatments
US11887811B2 (en) * 2020-09-08 2024-01-30 Applied Materials, Inc. Semiconductor processing chambers for deposition and etch
US11699571B2 (en) 2020-09-08 2023-07-11 Applied Materials, Inc. Semiconductor processing chambers for deposition and etch
USD940765S1 (en) 2020-12-02 2022-01-11 Applied Materials, Inc. Target profile for a physical vapor deposition chamber target
USD1072774S1 (en) 2021-02-06 2025-04-29 Applied Materials, Inc. Target profile for a physical vapor deposition chamber target
US11881423B2 (en) * 2021-02-09 2024-01-23 Applied Materials, Inc. Electrostatic chuck with metal bond
USD1007449S1 (en) 2021-05-07 2023-12-12 Applied Materials, Inc. Target profile for a physical vapor deposition chamber target
KR102615217B1 (ko) * 2021-08-24 2023-12-15 세메스 주식회사 정전 척을 포함하는 기판 처리 장치와 기판 처리 방법 및 정전 척 제조 방법
JP7569772B2 (ja) * 2021-10-07 2024-10-18 日本碍子株式会社 半導体製造装置用部材
US12014906B2 (en) 2021-11-19 2024-06-18 Applied Materials, Inc. High temperature detachable very high frequency (VHF) electrostatic chuck (ESC) for PVD chamber
KR102396865B1 (ko) * 2021-12-08 2022-05-12 주식회사 미코세라믹스 정전척
USD1053230S1 (en) 2022-05-19 2024-12-03 Applied Materials, Inc. Sputter target for a physical vapor deposition chamber
CN120435767A (zh) * 2022-10-03 2025-08-05 提升材料德国有限公司 卷材涂布方法及具有集成静电吸附的通风冷却鼓
US20240266200A1 (en) * 2023-02-08 2024-08-08 Applied Materials, Inc. Electrostatic Chuck
CN116496701A (zh) * 2023-04-21 2023-07-28 浙江新纳陶瓷新材有限公司 一种陶瓷盘的粘接方法
US20250015733A1 (en) * 2023-07-06 2025-01-09 Applied Materials, Inc. Finger Electrostatic Chuck for High Resistance Substrate Chucking

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3596127B2 (ja) * 1995-12-04 2004-12-02 ソニー株式会社 静電チャック、薄板保持装置、半導体製造装置、搬送方法及び半導体の製造方法
JP2002009064A (ja) * 2000-06-21 2002-01-11 Hitachi Ltd 試料の処理装置及び試料の処理方法
JP3978714B2 (ja) * 2002-02-26 2007-09-19 ジーイー・スペシャルティ・マテリアルズ・ジャパン株式会社 静電チャックの製造方法
JP3881908B2 (ja) * 2002-02-26 2007-02-14 株式会社日立ハイテクノロジーズ プラズマ処理装置
US6875927B2 (en) * 2002-03-08 2005-04-05 Applied Materials, Inc. High temperature DC chucking and RF biasing cable with high voltage isolation for biasable electrostatic chuck applications
JP4346877B2 (ja) * 2002-08-29 2009-10-21 東京エレクトロン株式会社 静電吸着装置および処理装置
KR20040070008A (ko) * 2003-01-29 2004-08-06 쿄세라 코포레이션 정전척
DE102005056364B3 (de) * 2005-11-25 2007-08-16 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Bipolarer Trägerwafer und mobile, bipolare, elektrostatische Waferanordnung
JP2007242913A (ja) * 2006-03-09 2007-09-20 Hitachi High-Technologies Corp 試料載置電極及びそれを用いたプラズマ処理装置
US7297894B1 (en) * 2006-09-25 2007-11-20 Tokyo Electron Limited Method for multi-step temperature control of a substrate
JP2007150351A (ja) * 2007-02-15 2007-06-14 Toto Ltd 静電チャック
JP4903610B2 (ja) 2007-03-27 2012-03-28 東京エレクトロン株式会社 プラズマ処理装置
JP4782733B2 (ja) * 2007-06-12 2011-09-28 東京エレクトロン株式会社 載置台およびそれを用いたプラズマ処理装置
JP2009054932A (ja) * 2007-08-29 2009-03-12 Shinko Electric Ind Co Ltd 静電チャック
JP4450106B1 (ja) * 2008-03-11 2010-04-14 東京エレクトロン株式会社 載置台構造及び処理装置
US20100014208A1 (en) * 2008-07-10 2010-01-21 Canon Anleva Corporation Substrate holder
US20100018648A1 (en) * 2008-07-23 2010-01-28 Applied Marterials, Inc. Workpiece support for a plasma reactor with controlled apportionment of rf power to a process kit ring
US8194384B2 (en) * 2008-07-23 2012-06-05 Tokyo Electron Limited High temperature electrostatic chuck and method of using
JP5163349B2 (ja) * 2008-08-01 2013-03-13 住友大阪セメント株式会社 静電チャック装置
EP2321846A4 (en) * 2008-08-12 2012-03-14 Applied Materials Inc ELECTROSTATIC FODDER ASSEMBLY
US7929269B2 (en) * 2008-09-04 2011-04-19 Momentive Performance Materials Inc. Wafer processing apparatus having a tunable electrical resistivity
US20100247804A1 (en) * 2009-03-24 2010-09-30 Applied Materials, Inc. Biasable cooling pedestal

Also Published As

Publication number Publication date
WO2012019017A2 (en) 2012-02-09
US20120033340A1 (en) 2012-02-09
KR20140004062A (ko) 2014-01-10
CN103081088A (zh) 2013-05-01
WO2012019017A3 (en) 2012-05-31
CN103081088B (zh) 2016-04-06
KR101892911B1 (ko) 2018-08-29
JP2013535842A (ja) 2013-09-12
US8559159B2 (en) 2013-10-15

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