Classifications

• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
  • B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
  • B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
  • B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
  • H01L21/67005—Apparatus not specifically provided for elsewhere
  • H01L21/67011—Apparatus for manufacture or treatment
  • H01L21/67098—Apparatus for thermal treatment
  • H01L21/67109—Apparatus for thermal treatment mainly by convection
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
  • H01L21/67005—Apparatus not specifically provided for elsewhere
  • H01L21/67011—Apparatus for manufacture or treatment
  • H01L21/67098—Apparatus for thermal treatment
  • H01L21/67103—Apparatus for thermal treatment mainly by conduction
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
  • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
  • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
  • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
  • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches

Definitions

• Figure 2 depicts a cross-sectional side view of an electrostatic chuck in accordance with some embodiments of the present invention.
• Figure 3 depicts a top view of a disk of an electrostatic chuck in accordance with some embodiments of the present invention.
• Figures 4A-B depict side views of a disk in accordance with some embodiments of the present invention.
• Figure 5 depicts a top view of an electrostatic chuck in accordance with some embodiments of the present invention.
• Figure 6 depicts a coupling for use with an electrostatic chuck in accordance with some embodiments of the present invention.
• Figures 7 and 8 depict terminals for use with an electrostatic chuck in accordance with some embodiments of the present invention.
• Figure 9 depicts a partial side view in cross-section of a portion of an electrostatic chuck in accordance with some embodiments of the present invention.
• Embodiments of electrostatic chucks and method of use thereof are provided herein.
• the inventive apparatus may advantageously provide an electrostatic chuck that may be rapidly heated and cooled simultaneously with the rapid heating and cooling of a substrate disposed thereon, thereby providing process flexibility and increased throughput in substrate processing.
• the inventive electrostatic chuck may further advantageously reduce or eliminate damages to the substrate resulting from friction due to differences in thermal expansion of a substrate and electrostatic chuck during processing.
• FIG. 1 is a schematic cross-sectional view of plasma processing chamber in accordance with some embodiments of the present invention.
• the plasma processing chamber is a physical vapor deposition (PVD) processing chamber.
• PVD physical vapor deposition
• other types of processing chambers that utilize electrostatic chucks may also be used with the inventive apparatus.
• the chamber 100 is a vacuum chamber which is suitably adapted to maintain sub-atmospheric pressures within a chamber interior volume 120 during substrate processing.
• the chamber 100 includes a chamber body 106 covered by a dome 104 which encloses a processing volume 1 19 located in the upper half of chamber interior volume 120.
• the chamber 100 may also include one or more shields 105 circumscribing various chamber components to prevent unwanted reaction between such components and ionized process material.
• the chamber body 106 and dome 104 may be made of metal, such as aluminum.
• the chamber body 106 may be grounded via a coupling to ground 1 15.
• a substrate support 124 may be disposed within the chamber interior volume 120 for supporting and chucking a substrate S, such as a semiconductor wafer or other such substrate as may be electrostatically retained.
• the substrate support 124 may generally include an electrostatic chuck 150 (described in more detail below) and a hollow support shaft 1 12 for supporting the electrostatic chuck 150.
• the hollow support shaft 1 12 provides a conduit to provide process gases, fluids, heat transfer fluids, power, or the like, to the electrostatic chuck 150.
• the hollow support shaft 1 12 is coupled to a lift mechanism 1 13 which provides vertical movement of the electrostatic chuck 150 between an upper, processing position (as shown in FIG. 1 ) and a lower, transfer position (not shown).
• a bellows assembly 1 10 is disposed about the hollow support shaft 1 12 and is coupled between the electrostatic chuck 150 and a bottom surface 126 of chamber 100 to provide a flexible seal that allows vertical motion of the electrostatic chuck 150 while preventing loss of vacuum from within the chamber 100.
• the bellows assembly 1 10 also includes a lower bellows flange 164 in contact with an o-ring 165 which contacts bottom surface 126 to help prevent loss of chamber vacuum.
• the hollow support shaft 1 12 provides a conduit for coupling a fluid source 142, a gas supply 141 , a chucking power supply 140, and one or more RF sources 1 17 (e.g. , an RF plasma power supply and/or an RF bias power supply) to the electrostatic chuck 150.
• the RF power supply 1 17 may be coupled to the electrostatic chuck via an RF matching network 1 16.
• a substrate lift 130 may include lift pins 109 mounted on a platform 108 connected to a shaft 1 1 1 which is coupled to a second lift mechanism 132 for raising and lowering the substrate lift 130 so that the substrate "S" may be placed on or removed from the electrostatic chuck 150.
• the electrostatic chuck 150 includes thru- holes (described below) to receive the lift pins 109.
• a bellows assembly 131 is coupled between the substrate lift 130 and bottom surface 126 to provide a flexible seal which maintains the chamber vacuum during vertical motion of the substrate lift 130.
• the chamber 100 is coupled to and in fluid communication with a vacuum system 1 14, which may include a throttle valve (not shown) and vacuum pump (not shown) which are used to exhaust the chamber 100. The pressure inside the chamber 100 may be regulated by adjusting the throttle valve and/or vacuum pump.
• the chamber 100 is also coupled to and in fluid communication with a process gas supply 1 18 which may supply one or more process gases to the chamber 100 for processing a substrate disposed therein.
• a plasma 102 may be created in the chamber interior volume 120 to perform one or more processes.
• the plasma 102 may be created by coupling power from a plasma power source (e.g., RF power supply 1 17) to a process gas via one or more electrodes (described below) within the chamber interior volume 120 to ignite the process gas and create the plasma 102.
• a plasma may be formed in the chamber interior volume 120 by other methods.
• a bias power may be provided from a bias power supply (e.g., RF power supply 1 17) to one or more electrodes (described below) disposed within the substrate support or the electrostatic chuck 150 to attract ions from the plasma towards the substrate S.
• a target 166 comprising a source material to be deposited on a substrate S may be disposed above the substrate and within the chamber interior volume 120.
• the target 166 may be supported by a grounded conductive portion of the chamber 100, for example an aluminum adapter through a dielectric isolator.
• a controllable DC power source 168 may be coupled to the chamber 100 to apply a negative voltage, or bias, to the target 166.
• An RF power supply 1 17A-B may be coupled to the substrate support 124 in order to induce a negative DC bias on the substrate 100.
• a negative DC self-bias may form on the substrate S during processing.
• the substrate support 124 may be grounded or left electrically floating.
• an RF power supply 170 may also be coupled to the chamber 100 to apply RF power to the target 166 to facilitate control of the radial distribution of a deposition rate on substrate S.
• ions in the plasma 102 created in the chamber 100 react with the source material from the target 166. The reaction causes the target 166 to eject atoms of the source material, which are then directed towards the substrate 100, thus depositing material.
• a rotatable magnetron may be positioned proximate a back surface of the target 166.
• the magnetron may include a plurality of magnets configured to produce a magnetic field within the chamber 100, generally parallel and close to the surface of the target 166 to trap electrons and increase the local plasma density, which in turn increases the sputtering rate.
• the magnets produce an electromagnetic field around the top of the chamber 100, and are rotated to rotate the electromagnetic field which influences the plasma density of the process to more uniformly sputter the target 166.
• FIG. 1A depicts a schematic side view of the electrostatic chuck 150 in accordance with some embodiments of the present invention.
• the electrostatic chuck 150 generally includes a disk 122 having a first surface for supporting the substrate S thereupon and an opposing second surface.
• a first electrode 128 is disposed proximate the first surface and may be coupled to the chucking power source 140, for example, via a conductor 154, to selectively electrostatically retain the substrate S on the first surface.
• a second electrode 138 is disposed proximate the second surface and may be coupled to the chucking power source 140, for example, via a conductor 152, to selectively electrostatically retain the disk 122 to a thermal control plate 134 disposed adjacent the disk 122.
• the chucking power source 140 may be one or more DC power sources that can provide up to about 4000 volts at a suitable power, for example from about 500 to about 4000 volts. Other magnitudes of DC power may also be used in electrostatic chucks having other configurations, for example, to retain smaller or larger substrates.
• a conduit 148 may be provided to couple the gas supply 141 to the electrostatic chuck, as discussed in more detail below.
• a vacuum feedthrough 146 may be provided within the thermal control plate 134 (or in another suitable location) to facilitate passing the conductors 154, 154 and the conduit 148 through the thermal control plate 134 while maintaining isolation between the atmosphere within the processing volume 1 19 and the atmosphere outside the processing volume (for example, within the hollow shaft 1 12 and outside of the chamber 100.
• the thermal control plate 134 may be disposed atop an isolator 136 to electrically isolate the thermal control plate 134 from other electrically conductive components in the substrate support 124.
• a grounding shell 144 may be provided about the electrostatic chuck 150 (or substrate support 124) and may be coupled to ground to provide an RF return path to ground from the processing volume 1 19.
• the electrostatic chuck may have a variety of configurations in accordance with the teachings provided herein.
• Figure 2 depicts a cross-sectional side view of an electrostatic chuck in accordance with some embodiments of the present invention.
• the electrostatic chuck 150 generally comprises a disk 202 disposed atop a thermal control plate 204.
• the disk 202 has a substrate support surface opposite the thermal control plate 204 for supporting the substrate S.
• the thermal control plate 204 may be disposed atop a hollow base 212, which is coupled to, and supported by, the hollow support shaft 1 12.
• the thermal control plate 204 may additionally rest atop an insulating layer 208 disposed within a support housing 210.
• the support housing 210 may provide mechanical support to the insulating layer 208 and thermal control plate 204.
• the insulating layer 208 may provide a electrical or radio frequency (RF) insulation between the thermal control plate 204 and the support housing 210.
• RF radio frequency
• the thermal control plate 204 is comprised of two or more plates, joined together during manufacturing. Plate 217 is shown as a possible second, connected part. When present, the plate 217 provides an interface for coupling the hollow support shaft 1 12 to the electrostatic chuck 150.
• a conduit 229, coupled to a housing 224 is disposed within the hollow support shaft 1 12.
• the housing 224 may be coupled to the thermal control plate 204 via any means suitable to provide adequate coupling.
• the housing 224 comprises a flange 223 having a through hole 221 configured to accept a fastener (e.g., a screw, bolt, pin or the like) to couple the housing 224 to the thermal control plate 204.
• conduit 229, with housing 224 may be utilized as the conductor 156, transmitting appropriate RF power to the thermal control plate 204.
• Housing 224, along with the conduit 229 may also provide space to route RF bias power or other utilities to the thermal control plate 204.
• the housing 224 may house a manifold 235 (described below) comprising a plurality of through holes (described below) or junctions (not shown) configured to facilitate distributing process gases, heat transfer fluids, or power selectively to areas of the disk 202 and thermal control plate 204.
• the process gases, heat transfer fluids, or power may be supplied by sources (e.g. the RF plasma supply 1 17, 1 17A, chucking power source 140, gas supply 141 , fluid source 142, described above with respect to Figure 1 ) coupled to respective conduits (e.g. gas supply lines 236, 234 and electrical conduit 232).
• the gas supply 141 may provide a single gas, or in some embodiments may provide more than one gas.
• the gas supply 141 may be configured to selectively provide gases to separate sections of the electrostatic chuck 150, for example, at an interface 216 between the disk 202 and substrate S or an interface 218 between the disk 202 and the thermal control plate 204.
• a process kit for example a deposition ring 206 as depicted in Figure 2, may be disposed atop the substrate support 124 and around the substrate S to cover otherwise exposed portions of the substrate support 124.
• the deposition ring 206 may be disposed on a ledge 228 of the thermal control plate 204.
• the deposition ring 206 has a central opening that generally corresponds with the shape of the substrate S but typically extends beneath the substrate S, although not in direct contact therewith.
• the deposition ring also generally surrounds the disk 202 and a narrow gap may be defined between the inner edge of the deposition ring 206 and the outer edge of the disk 202.
• the deposition ring 206 protects covered portions of the substrate support 124 from damage due to processing (such as from the plasma or from sputtering or other process byproducts from the substrate S).
• the deposition ring 206 may be fabricated from any process compatible electrically insulative material.
• the deposition ring 206 may be fabricated from a dielectric material, such as a ceramic, aluminum nitride (AIN), silicon nitride (SiN), or the like.
• the disk 202 generally comprises a body 245 having a substrate-facing surface 220 and a generally opposing thermal control plate-facing surface 222.
• the substrate-facing surface 220 may comprise one or more first grooves 238 coupled to one or more first through holes 239 to facilitate providing a flow of gas, for example an inert gas, such as helium (He), argon (Ar), or the like, or other heat transfer fluid at the interface 216 between the disk 202 and substrate S to facilitate a heat transfer between the disk 202 and substrate S.
• an inert gas such as helium (He), argon (Ar), or the like
• the heat transfer gas may be delivered to the one or more first grooves 238 through one or more first holes 239 in the disk 202 which are in fluid communication with one or more first grooves 238.
• the thermal control plate-facing surface 222 may comprise one or more second grooves 240 coupled to one or more second through holes 241 to facilitate providing a flow of gas or other heat transfer fluid at the interface 218 between the disk 202 and the thermal control plate 204.
• the disk 202 may be fabricated to have any dimensions and shape suitable to provide adequate support and sufficient heat transfer properties.
• the disk 202 may have a thickness on the order of the thickness of the substrate S, for example, up to about three times the thickness of the substrate S.
• the disk 202 may comprise a thickness of from about 1 .0 mm to about 3 mm, or about 1 .5 mm.
• the disk 202 may have an outer edge 221 that is substantially perpendicular to the substrate-facing surface 220 and the thermal control plate 204 facing surface 222.
• the outer edge 221 may have an angled edge 226 configured to interface with a corresponding angled edge 227 of the deposition ring 206 to eliminate a perpendicular line-of-sight from the processing volume to components of the substrate support 124 through the gap between the deposition ring 206 and the disk 202, thereby reducing or preventing plasma induced damage to the substrate support 124 components during processing.
• the disk 202 may be coupled to the thermal control plate 204 via any means suitable to provide an adequate coupling and prevent movement of the disk 202 during processing.
• the disk 202 is removably coupled via an electrostatic attraction.
• the disk 202 comprises one or more electrodes (described below) disposed within the body 245 proximate the thermal control plate-facing surface 222.
• Chucking power for example a DC voltage, may be supplied from a power source (e.g., chucking power source 140 described in Figure 1 ) to the electrode via one or more electrical conduits 232 disposed within the hollow support shaft 1 12, thereby creating sufficient electrostatic attraction to couple the disk 202 to the thermal control plate 204.
• the disk 202 may be mechanically coupled to the thermal control plate 204, for example, for example via mechanical fasteners such as bolts, screws, cams, clamps, springs, or the like,
• a plurality of through holes (one shown) 230 may be provided in the disk 202 to interface with respective fasteners (e.g., a bolt, a screw, a cam, or the like), for example, as described below with respect to Figure 6.
• the thermal control plate 204 may comprise any material suitable to provide an adequate heat transfer from the disk 202 to the thermal control plate 204.
• the thermal control plate 204 may be fabricated from a metal, such as aluminum, nickel, or the like.
• the thermal control plate 204 may comprise one or more channels 240 formed therein for circulating a heat transfer fluid to further facilitate a heat transfer from the disk 202 to the thermal control plate 204.
• the thermal control plate 204 (as shown with plate 217) may have a thickness of about 10 to about 30 mm.
• the insulating layer 208 may comprise any electrically insulating material suitable to provide an electrical insulation while providing adequate and stable support during processing.
• the insulating layer 208 may comprise a dielectric material, for example, a ceramic, aluminum nitride (AIN), silicon nitride (SiN), or the like.
• the insulating layer 208 is disposed within the support housing 210.
• the support housing 210 provides mechanical support to the insulating layer 208 and may be fabricated from a metal, for example aluminum.
• the support housing 210 may be grounded, for example via a conductive connection to a grounded portion of the chamber 100 (described above).
• the disk 202 may have any dimensions suitable for the particular process chamber used, process performed, or substrate processed.
• the disk 202 may have a diameter 306 of about 270 to about 320 mm, or in some embodiments, about 290 mm.
• the disk 202 may comprise a plurality of through holes to facilitate, for example, mounting the disk 202 to the thermal control plate, providing a gas to a substrate disposed atop the disk 202, or allowing lift pins to raise and lower the substrate from the surface of the disk 202.
• the disk 202 may comprise a plurality of mounting holes 310A- C to facilitate coupling the disk 202 to the thermal control plate 204.
• the disk 202 may be coupled to the thermal control plate 204 via a series of clamp screws, or bolts (e.g. , as described below with respect to Figure 6).
• a flange 908 may be provided proximate an upper portion of the lift pin guide 902 to facilitate retaining the lift pin guide within the thermal control plate 204 and/or to provide a longer path from the processing region of the process chamber, through the opening 910 in the disk 202, and to the thermal control plate 204 which may be RF hot during processing, thereby preventing or limiting any arcing that may occur.
• An isolation ring 914 may be provided atop the thermal control plate 204, between the thermal control plate 204 and an outer edge of the disk 202, adjacent to and radially inward of the deposition ring 206.
• o-rings, insulators, gaskets or the like may be disposed between the manifold 235, housing 224 and vacuum plate 217 to prevent fluid or electrical leakage.
• an RF gasket 522 may be disposed atop the housing 224 to reduce or prevent radio frequency (RF) interference when coupled to the vacuum plate 217. Also to electrically couple the housing 224 to the thermal control plate 202 for more efficient delivery of RF power to the thermal control plate 202.
• RF radio frequency
• the manifold 235 may be fabricated from any material suitable to provide process gases, power, heat transfer fluids or the like to the disk and thermal control plate.
• the manifold 235 may be fabricated from a ceramic, or in some embodiments, from a metal, such as aluminum, stainless steel, titanium, or the like.
• the manifold 235 may be coupled to the vacuum plate 217 via any means suitable to provide an adequate coupling.
• the manifold 235 may be coupled to the vacuum plate 217 via welding or brazing.
• an o-ring 512 may be disposed atop the vacuum plate 217 to form a vacuum seal between the vacuum plate 217 and thermal control plate (not shown) when disposed thereon.
• the disk 202 may be coupled to the thermal control plate via a flexible screw and nut configuration 608.
• thermal control plate 204 and disk 202 comprises a through hole 610 having dimensions suitable to interface with a screw 606.
• the through hole 610 may have dimensions larger than that of the screw 606 to allow each of the thermal control plate 204 and disk 202 to move independently of one another, thereby reducing damage to the thermal control plate 204 and/or disk 202 caused by differences in thermal expansion.
• the screw 606 may be any suitable type of screw, for example, a machine screw, thumb screw, clamp screw or the like.
• the screw 606 may comprise a tapered head 614 configured to interface with a tapered end 612 of the through hole 610 such that the tapered head 614 can clamp down the disk 202 when the screw 606 is tightened and is disposed even with or below an upper surface of the disk 202.
• the screw 606 may be fabricated from any material suitable to provide adequate coupling of the thermal control plate 204 and disk 202, for example, a metal, such as aluminum, titanium, stainless steel, or the like.
• a nut 602 is disposed beneath the thermal control plate 204 and comprises a series of threads 618 configured to interface with a threaded end 616 of the screw 606.
• the nut 602 may be fabricated from any material suitable to provide a secure coupling of the thermal control plate 204 to the disk 202, for example a metal, such as aluminum, titanium, stainless steel, or the like.
• the nut 602 may be fabricated from the same, or different, material than that of the screw 606.
• a biasing member 604 may be disposed between the thermal control plate 204 and nut 602 to maintain a desired clamping pressure on the thermal control plate 204 and disk 202 while allowing for thermal expansion of the thermal control plate 204 and/or disk 202.
• a screw and nut configuration 608 is shown, any number of screw and nut configurations 608 may be utilized to couple the disk 202 to the thermal control plate 204.
• electrical power may be delivered to an electrode 710 within the disk 202 by way of a terminal 702.
• the terminal 702 may be electrically coupled to a conductor 706 via a spring element 708 to maintain sufficient electrical connection during any vertical movement of the terminal 702.
• Force applied to the electrode 710 of the disk 202 could be controlled by way of a suitable spring 707 that biases the terminal 702 toward the electrode
• Elements 703, 704, and 705 may provide a housing for the terminal 702 and may be made of suitable insulating material to electrically isolate the electrical elements (e.g., the terminal 702 and the conductor 706 from the thermal control plate 204 or any other conductive elements in the vicinity of the power feedthrough
• the power feedthrough 71 1 may be coupled to the manifold 235 by use of welding, brazing, or other similar joining technique, so as to create a vacuum tight connection between areas 713 (for example, a process volume within the process chamber) and 714 (for example, a region isolated from the process volume).
• the disk 202 may be electrically coupled to a power supply 810 via one or more terminals 814 (one shown) disposed within a through hole 806 formed in the disk 202.
• the through hole 806 may be formed in any location on the disk 202 that may provide a connection between an electrode 802 disposed within the disk 202 and the power supply 810.
• the through hole 806 may be formed proximate an outer edge 812 of the disk 202, or alternatively, may be formed within an outwardly extending tab formed integrally with the body of the disk 202.
• the terminal 814 may comprise a shaft 816 having dimensions suitable to fit within the through hole 806 and a flared head 804 to secure the terminal 814 in a static position within the through hole 806.
• the terminal 814 may comprise any material suitable to couple the disk 202 to the power supply 810.
• the terminal 814 may comprise a metal, such as aluminum, titanium, stainless steel, or the like.
• the disk 202 may be heated or cooled at a rate of up to about 50 degrees Celsius per second, or in some embodiments, a heating rate of up to about 150 degrees Celsius per second and a cooling rate of up to about 20 degrees Celsius per second.
• a thermally conductive gas e.g., argon, helium, or the like
• argon, helium, or the like may be provided to the interface 216 between the disk 202 and substrate S while providing an AC power to one or both electrodes of the disk 202 to heat the disk.
• the presence of the gas improves a heat transfer between the substrate S and disk 202, thereby providing an increased rate of heating.
• a chucking power may be provided to the electrode 406 of the disk 202 to chuck the substrate S to the disk 202 to further improve the heat transfer between the substrate S and disk 202, thereby further facilitating a rapid heating of the substrate S.
• the disk may be poorly thermally coupled to the thermal control plate to further enhance the rate of heating of the substrate.
• the flow of gas may be reduced or terminated to reduce the rate of heat transfer from the disk to the thermal control plate.
• the power to the electrode may be reduced or terminated to reduce clamping pressure between the disk and the thermal control plate to reduce the rate of heat transfer from the disk to the thermal control plate.
• a thermally conductive gas e.g. argon, helium, or the like
• the operating pressure in the chamber may be less than about 30 mTorr.
• the pressure between the disk 202 and the thermal control plate 204 may be maintained, by providing the conductive gas, at between about 2 to about 20 Torr. The presence of the gas improves a heat transfer between the disk 202 and thermal control plate 204, thereby providing an increased rate of cooling.
• a chucking power may be provided or increased to the electrode 408 of the disk 202 to increase the clamping pressure of the disk 202 to the thermal control plate 204 to further improve the rate of heat transfer between the disk 202 and thermal control plate 204, thereby further facilitating a rapid cooling of the disk 202 and the substrate S.
• the disk 202 and the substrate S will heat and cool and substantially similar rates.
• the disk 202 has a coefficient of thermal expansion that is similar to that of the Substrate S, friction between the substrate S and electrostatic chuck 150 due to differing rates of thermal expansion or contraction may be reduced or eliminated, thereby reducing or eliminating damage to the substrate S.

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• Engineering & Computer Science (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• General Physics & Mathematics (AREA)
• Manufacturing & Machinery (AREA)
• Computer Hardware Design (AREA)
• Physics & Mathematics (AREA)
• Power Engineering (AREA)
• Mechanical Engineering (AREA)
• Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
• Jigs For Machine Tools (AREA)
• Physical Vapour Deposition (AREA)
• Drying Of Semiconductors (AREA)

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• 2011
  • 2011-08-04 JP JP2013524119A patent/JP6195519B2/ja active Active
  • 2011-08-04 WO PCT/US2011/046611 patent/WO2012019017A2/en not_active Ceased
  • 2011-08-04 US US13/198,204 patent/US8559159B2/en active Active
  • 2011-08-04 KR KR1020137005720A patent/KR101892911B1/ko active Active
  • 2011-08-04 CN CN201180042581.XA patent/CN103081088B/zh active Active

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