CN103066032B - 封装件及其形成方法 - Google Patents
封装件及其形成方法 Download PDFInfo
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- CN103066032B CN103066032B CN201210065841.1A CN201210065841A CN103066032B CN 103066032 B CN103066032 B CN 103066032B CN 201210065841 A CN201210065841 A CN 201210065841A CN 103066032 B CN103066032 B CN 103066032B
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 87
- 238000000034 method Methods 0.000 title claims abstract description 29
- 229920000642 polymer Polymers 0.000 claims abstract description 28
- 239000000206 moulding compound Substances 0.000 claims description 23
- 229910000679 solder Inorganic materials 0.000 claims description 14
- 239000004065 semiconductor Substances 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 239000002184 metal Substances 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
- XRWSZZJLZRKHHD-WVWIJVSJSA-N asunaprevir Chemical compound O=C([C@@H]1C[C@H](CN1C(=O)[C@@H](NC(=O)OC(C)(C)C)C(C)(C)C)OC1=NC=C(C2=CC=C(Cl)C=C21)OC)N[C@]1(C(=O)NS(=O)(=O)C2CC2)C[C@H]1C=C XRWSZZJLZRKHHD-WVWIJVSJSA-N 0.000 description 8
- 229940125961 compound 24 Drugs 0.000 description 8
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 7
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 7
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 7
- 239000000758 substrate Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 238000005538 encapsulation Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000010023 transfer printing Methods 0.000 description 1
Classifications
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Abstract
一种器件包括:封装部件,具有顶面上方的导电部件,以及聚合物区域,模制在第一封装部件的顶面上方。多个开口从聚合物区域的顶面延伸到聚合物区域中,其中,导电部件中的每一个通过多个开口中的一个露出。多个开口包括:第一开口,具有第一水平尺寸;以及第二开口,具有第二水平尺寸,第一水平尺寸不同于第二水平尺寸。本发明还提供了封装件及其形成方法。
Description
技术领域
本发明一般地涉及半导体领域,更具体地来说,涉及封装件及其形成方法。
背景技术
在传统的叠层封装(package-on-package,POP)工艺中,其中,将接合第一器件管芯的顶部封装件接合至底部封装件。底部封装件还可以具有封装在其中的器件管芯。通过采用PoP工艺,可以增加封装的集成级别。
由于顶部封装件和底部封装件的每一个都包括具有不同热膨胀系数(CTE)的不同材料,所以在形成顶部封装件和底部封装件之后,可以在顶部封装件和底部封装件的任一个或两个中发生翘曲。翘曲可以为正翘曲,其中,封装件的中心部分大于边缘部分。相反,翘曲可以为负翘曲,其中,翘曲的中心部分低于边缘部分。在接合顶部封装件和底部封装件之后,作为翘曲结果可以发生虚焊(coldjoint),并且一些连接可能失败。当顶部封装件的翘曲与底部封装件的翘曲与不匹配时,情况恶化。例如,当顶部封装件具有正翘曲且底部封装件具有负翘曲时或者顶部封装件具有负翘曲且底部封装件具有正翘曲时,增加了虚焊发生的机会。
发明内容
为了解决现有技术中所存在的缺陷,根据本发明的一方面,提供了一种器件,包括:第一封装部件,包括顶面上方的导电部件;聚合物区域,模制在所述第一封装部件的所述顶面上方;以及多个开口,从所述聚合物区域的顶面延伸到所述聚合物区域中,其中,通过所述多个开口的每一个露出所述导电部件的一个,以及其中,所述多个开口包括:第一开口,具有第一水平尺寸;和第二开口,具有第二水平尺寸,所述第一水平尺寸不同于所述第二水平尺寸。
在该器件中,所述第一水平尺寸大于所述第二水平尺寸,以及其中,所述第一开口比所述第二开口更接近所述第一封装部件的中心。
在该器件中,所述第一水平尺寸小于所述第二水平尺寸,以及其中,所述第一开口比所述第二开口更接近所述第一封装部件的中心。
在该器件中,所述第一水平尺寸在所述第二水平尺寸的大约50%至大约90%之间。
该器件还包括:器件管芯,接合至所述第一封装部件并模制在所述聚合物区域中。
该器件还包括:第二封装部件,通过多个包含焊料的连接件接合至所述第一封装部件,其中,每一个包含焊料的连接件都包括延伸到所述多个开口中的一个的部分。
在该器件中,在从所述第一封装部件的中心延伸到所述第一封装部件的边缘的方向上,所述多个开口的水平尺寸逐渐增加或减小。
根据本发明的另一方面,提供了一种器件,包括:封装件,包括:第一封装部件,包括所述第一封装部件的顶面上方的导电部件;器件管芯,接合至所述第一封装部件的顶面;模塑料,模制在所述第一封装部件的顶面上方,其中,所述器件管芯模制在所述模塑料中;以及多个开口,位于所述模塑料中,其中,所述导电部件的每一个通过所述多个开口的一个露出,以及其中,所述多个开口具有彼此不同的至少两个水平尺寸;以及第二封装部件,位于所述封装件的上方并通过多个焊料区域接合至所述导电部件,其中,所述多个焊料区域的部分延伸到所述多个开口中。
在该器件中,与所述多个开口中更接近所述封装件的边缘和角部的外侧开口相比,所述多个开口中更接近所述封装件的中心的内侧开口具有更大的尺寸。
在该器件中,所述封装件和所述第二封装部件具有负翘曲。
在该器件中,与所述多个开口中更接近所述封装件的边缘和角部的外侧开口相比,所述多个开口中更接近所述封装件的中心的内侧开口具有更小的尺寸。
在该器件中,所述封装件和所述第二封装部件具有正翘曲。
在该器件中,所述封装件包括多个环形区域,通过所述多个环形区域的外侧区域围绕所述多个环形区域的内侧区域,以及其中,所述多个环形区域中的同一区域中的多个开口的部分具有相同的水平尺寸,以及其中,所述多个环形区域中的不同区域中的多个开口部分具有不同的水平尺寸。
在该器件中,所述至少两个水平尺寸包括第一水平尺寸和第二水平尺寸,所述第一水平尺寸小于所述第二水平尺寸的大约90%。
根据本发明的又一方面,提供了一种方法,包括:评估第一封装部件和封装件,以确定包括所述第一封装部件和所述封装件的组合封装件的翘曲状态,其中,所述翘曲状态包括正翘曲和负翘曲,以及其中,所述封装件包括:器件管芯和第二封装部件,其中,所述器件管芯接合至所述第二封装部件的顶面;和聚合物区域,模制在所述第二封装部件的顶面上方,其中,所述器件管芯模制在所述聚合物区域中;以及在所述聚合物区域中形成多个开口以露出所述第二封装部件的顶面上方的导电部件,其中,形成所述多个开口的步骤包括:响应于所述正翘曲,使所述多个开口中更接近所述封装件的中心的内侧开口比所述多个开口的外侧开口具有更小的水平尺寸;以及响应于所述负翘曲,使所述多个开口中更接近所述封装件的中心的内侧开口比所述多个开口的外侧开口具有更大的水平尺寸。
该方法包括:响应于作为评估步骤结果的在所述第一封装部件和所述封装件之间没有翘曲,形成具有基本上相等的水平尺寸的多个开口。
该方法还包括:通过包含焊料的区域将所述第一封装部件接合至所述封装件,其中,所述包含焊料的区域延伸到所述多个开口中。
在该方法中,所述聚合物区域包括模塑料,以及其中,所述模塑料的顶面不低于所述器件管芯的顶面。
在该方法中,形成所述多个开口的步骤包括:将所述封装件划分为多个环状区域,所述多个环形区域的外侧区域围绕所述多个环形区域的内侧区域,以及其中,将所述多个环形区域的同一区域中的多个开口形成为具有相同的水平尺寸,并且其中,将所述多个环形区域的不同区域中的多个开口形成为具有不同的水平尺寸。
在该方法中,所述多个开口中的内侧开口和外侧开口包括较小的开口和较大的开口,以及其中,所述多个开口中的较小开口具有第一水平尺寸,所述第一水平尺寸小于所述多个开口的较大开口的大约90%。
附图说明
为了更完整地理解本实施例及其优点,现在结合附图进行以下描述作为参考,其中:
图1至图6是根据各个实施例的制造封装件过程中的中间阶段的截面图和俯视图。
具体实施方式
以下详细讨论本发明的实施例的制造和使用。然而,应该理解,本发明提供了许多可以在各种具体环境下实现的可应用发明概念。所讨论的具体实施例仅仅示出了制造和使用本发明的具体方式,而不用于限制本发明的范围。
根据各个实施例提供了封装件及其制造方法。示出了形成封装件的中间阶段。讨论了实施例的变型例。在各个附图和说明性实施例中,类似的标号用于表示类似元件。
参照图1,提供封装部件10。在实施例中,封装部件10包括插入板(interposer)。在可选实施例中,封装部件10包括封装基板。封装部件10可以包括由半导体材料形成的基板11,诸如硅、硅锗、碳化硅、砷化镓或其他通用的半导体材料。可选地,基板11由介电材料形成。基板11还可以为层压基板,该层压基板包括层压电介质膜。封装部件10被配置为将第一表面10A上的连接件12电连接至第二表面10B上的导电部件16,其中,表面10A和10B是封装部件10的相对表面。在一些实施例中,连接件12可以包括诸如焊球、金属柱、凸块底部金属化层的导电部件。可选地,连接件12包括金属柱和相邻焊料区域。例如,导电部件16可以为金属焊盘。封装部件10其中可以包括金属线/通孔14,并且还可以包括形成在基板11中的通孔。
封装部件20通过连接件12接合至封装部件10。封装部件20可以为管芯,因此可选地,在本文中将在以后称为管芯20,但是该封装部件还可以为另一种类型的封装部件(诸如封装件)。管芯20可以为其中包括集成电路器件(诸如晶体管、电容器、电感器、电阻器(未示出)等)的器件管芯。此外,管芯20可以为包括核心电路的逻辑管芯,并且可以为例如中央计算单元(CPU)管芯、图形管芯或存储管芯。管芯20与连接件12的接合可以为焊接接合或直接金属与金属接合(诸如铜与铜接合)。底部填充物18可以散布在管芯20和封装部件10之间的间隙中。
参照图2,聚合物24被涂覆在管芯20和封装部件10上方。在示例性实施例中,聚合物24包括模塑料,因此在下文称为模塑料24,尽管该聚合物还可以由诸如模制底部填充物(MUF)、环氧树脂等的其他材料形成。模塑料24可以与管芯20的顶面和边缘接触,并且可以与封装部件10的顶面接触。模塑料24可以利用例如压缩模制或转印模制而模制到管芯20和封装部件10上。模塑料24的顶面24A可以高于管芯20的顶面20A,并且管芯20可以完全密封到模塑料24中。任选地,可以实施研磨以去除模塑料24的多个部分(在管芯20的顶面20A上方的部分),因此露出顶面20A,并且该顶面20A与模塑料24的顶面24A平齐。
在图3中,连接件26形成在导电部件16上方,并且可以通过诸如金属线/通孔14的连接而电连接至连接件12。连接件26和管芯20可以位于封装部件10的相对面上方。连接件26可以为焊球,其被放置在导电部件16上方。对焊球26实施回流。由此形成也被称为封装部件的底部封装件30。底部封装件30包括边缘30A和处于边缘30A中间的中心30B。中心30B还可以为封装部件10的中心。
图4A示出了模塑料24中的开口32的形成。可以通过钻孔、蚀刻等形成开口32。通过开口32露出封装部件10的顶面上的导电部件34。导电部件34可以为金属焊盘,并且可以电连接至连接件12和/或连接件26。开口32包括内侧开口32A和外侧开口32B,其中,外侧开口32B比内侧开口32A更加远离封装件30的中心30B(其还可以为封装部件10的中心)。开口32具有相互不同的多个水平尺寸(诸如D1和D2),其中,水平尺寸D1为外侧开口32B的尺寸,而水平尺寸D2为内侧开口32A的尺寸。在一些实施例中,水平尺寸D1小于水平尺寸D2,例如,小于D2的大约90%或80%。水平尺寸D1还可以在大约50%的尺寸D2和大约90%的尺寸D2之间。在可选实施例中,水平尺寸D2小于水平尺寸D1,并且可以小于尺寸D1的90%或80%,或者可以在尺寸D1的大约50%和大约90%之间。
图4B示出了根据示例性实施例的封装件30的俯视图。在俯视图中,封装件30包括多个环形区域,它们被示意性示为相邻虚线环之间的区域。多个环形区域的内侧区域被多个环形区域的外侧区域包围。在一些实施例中,开口32的水平尺寸与它们属于的环形区域相关。例如,多个环形区域中的同一区域中的开口32可以具有相同的水平尺寸,并且多个环形区域中的不同区域中的开口32可具有不同(或相同)的水平尺寸。可选地,开口32可以认为与包围中心30B的多个环对准。从接近封装件30的边缘30A和/或角部30C的外侧环到接近中心30B的内侧环,水平尺寸被表示为D1、D2...Dn,其中,D1为最外侧环中的开口32的水平尺寸,以及Dn是最内侧环中的开口32的水平尺寸。根据开口32的数量以及封装件30中开口32的不同水平尺寸的总数,整数n可以等于3、4、5或者任何大于5的整数。
注意,尽管开口32的俯视图形状为圆形,因此水平尺寸D1至Dn为直径,但开口32可以具有其他俯视图形状,诸如正方形、长方形、六边形、八边形等,并且水平尺寸D1至Dn可以为开口32的最大水平尺寸。此外,在开口32的侧壁倾斜的实施例中,只要使用相同标准测量所有水平尺寸,开口32的顶部尺寸或底部尺寸(如图4A所示)可以用于比较的目的。
在一些实施例中,接近边缘30A和角部30C的外侧环形区域中开口32的水平尺寸Dn...D2、D1小于接近中心30B的内侧环形区域中开口32的水平尺寸,并且每一个外侧环形区域的水平尺寸都可以等于或小于内侧环形区域中开口32的水平尺寸。例如,可以具有关系Dn>...>D2>D1,但是相邻环形区域中的开口32的水平尺寸可以彼此相等。可选地,外侧环形区域中的每个开口32的水平尺寸可以等于或大于内侧环形区域中开口32的水平尺寸。例如,可以具有关系Dn<...<D2<D1,但是相邻环形区域中的开口32的水平尺寸可以彼此相等。
图5和图6示出了封装部件130与封装部件30的接合。示出了封装部件130的截面图。在一个实施例中,封装部件130还可以为封装件,该封装部件可以包括封装部件110和接合在封装部件110上方的管芯120,并且在管芯120上形成模塑料124。管芯120可以为器件管芯,并且封装部件110可以为插入板、封装基板等。在可选实施例中,封装部件130可以为器件管芯。封装部件130可以在底面具有连接件126。连接件126还可以为其中包括焊料的各种形式,并且可以为焊球、金属柱和其上的焊料罩(soldercap)等。
图5和图6还示出了封装部件30和130的接合,其中,连接件126(其位置被设计为与开口32(图4A)的位置对准)接合至封装30中的导电部件34。图5示出了封装部件30和130具有负翘曲,这意味着中心间隔S1小于边缘间隔S2。中心间隔S1为接近封装部件30和130的中心的封装部件30和130的部分之间的间隔,而边缘间隔S2为接近封装部件30和130的边缘的封装部件30和130的部分之间的间隔。注意,尽管图5示出了封装部件130具有负翘曲且封装部件30基本上为平直的,但它们可以为其他情况,其中,封装部件30和130的每一个都可以具有正翘曲、负翘曲或者可以基本上平坦的。在整个描述中,不管对应的封装部件30和130的翘曲如何,只要间隔S1小于间隔S2,封装部件30和130的组合都可以指具有负翘曲。
在图5中,如果所有开口32(被连接件126填充,也参照图4A)都具有相同尺寸,则更可能在外侧开口32处发生虚焊。在实施例中,如果针对接合的封装部件30和130发生负翘曲,则内侧开口32的尺寸被设计为大于外侧开口32的尺寸。因此,内侧开口32可以容纳更多的焊料,并且对于封装部件30和130来说更容易具有比外侧间隔(诸如S2)小的内侧间隔(诸如S1)。因此,封装部件130的内部可以接近封装部件30,并且减小了在外侧开口32中发生虚焊的机会。
图6示出了封装部件30和130的接合,其中,封装部件30和130具有正翘曲,这意味着中心间隔S1大于边缘间隔S2。注意,尽管图6示出了封装部件130具有正翘曲且封装部件30基本上为平直的,但可以存在其他情况,其中,封装部件30和130的每一个都可以具有正翘曲、负翘曲或者基本上平坦。在整个描述中,不管对应封装部件30和130的翘曲状态如何,只要中心间隔S1大于边缘间隔S2,封装部件30和130的组合都可以指具有正翘曲。
在图6中,如果所有开口32(被连接件126填充,也参照图4A)具有相同尺寸,则更加可能在内侧开口32处发生虚焊。在实施例中,如果将针对接合的封装部件30和130发生正翘曲,则内侧开口32的尺寸被设计为小于外侧开口32的尺寸。因此,外侧开口32可以容纳更多的焊料,并且对于封装部件30和130来说与诸如S1的内侧间隔相比更容易具有更小的外侧间隔(诸如S2)。因此,封装部件130的外部可以接近封装部件30,并且减小了在内侧开口32中发生虚焊的机会。
在一个实施例中,在封装件30(图4)中形成开口32之前,可以进行评估以确定接合的封装部件30和130的翘曲状态。在评估中,评估封装件30和130的轮廓以确定接合之后的封装部件30和130具有正翘曲还是负翘曲。还可以通过接合样本封装部件30和130的实验来进行评估。如果将产生负翘曲,则内侧开口32的水平尺寸被设计为大于外侧开口32的水平尺寸。相反,如果将产生正翘曲,则内侧开口32的水平尺寸被设计为小于外侧开口32的水平尺寸。然而,如果对于接合的封装件30和封装部件130没有发生翘曲,则穿过整个封装件30的开口32可以具有基本相同的尺寸。没有翘曲的情况可以包括封装件30和封装部件130不具有翘曲的情况或者封装件30和封装部件130在相同方向上翘曲并具有基本相同的曲率。通过调整底部封装件30中开口32的尺寸,可以减小虚焊的可能性。
根据实施例,一种器件包括:封装部件,在顶面上具有导电部件;以及聚合物区域,模制在第一封装部件的顶面上方。多个开口从聚合物区域的顶面延伸到聚合物区域中,其中,通过多个开口的每一个暴露导电部件的每一个。多个开口包括:第一开口,具有第一水平尺寸;第二开口,具有不同于第一水平尺寸的第二水平尺寸。
根据其他实施例,一种器件包括封装件,封装件包括:第一封装部件,在第一封装部件的顶面上方包括导电部件;器件管芯,接合至第一封装部件的顶面;以及模塑料,模制在第一封装部件的顶面上方,其中,器件管芯模制在模塑料中。封装件还包括模塑料中的多个开口。导电部件的每一个通过多个开口的每一个露出。多个开口具有彼此不同的至少两个水平尺寸。第二封装部件位于封装件的上方并通过多个焊料区域接合至导电部件,多个焊料区域的多个部分延伸到多个开口中。
根据又一些实施例,一种包括:评估第一封装部件和封装件,以确定包括所述第一封装部件和封装件的组合封装件的翘曲状态,其中,翘曲状态包括正翘曲和负翘曲。封装件包括:器件管芯和第二封装部件,其中,器件管芯接合至第二封装部件的顶面;和聚合物区域,模制在第二封装部件的顶面上方,其中,器件管芯模制在聚合物区域中。该方法还包括:在聚合物区域中形成多个开口以露出第二封装部件的顶面上方的导电部件。形成多个开口的步骤包括:响应于正翘曲,使多个开口中更接近封装件的中心的内侧开口比多个开口的外侧开口具有更小的水平尺寸;以及响应于负翘曲,使多个开口中更接近封装件的中心的内侧开口比多个开口的外侧开口具有更大的水平尺寸。
尽管详细描述了实施例及其优点,但应该理解,在不背离由所附权利要求限定的实施例的主旨和范围的情况下,可以进行各种改变、替换和变化。此外,本申请的范围不限于说明书中描述的工艺、机器、制造、物质组成、装置、方法和步骤的特定实施例。本领域的技术人员应该容易地从发明中理解,可以根据本发明利用现有或稍后开发的实施与本文所描述对应实施例基本相同的功能或实现基本相同的结果的工艺、机器、制造、物质组成、装置、方法和步骤。因此,所附权利要求用于在它们的范围内包括这些工艺、机器、制造、物质组成、装置、方法和步骤。此外,每个权利要求都构成独立的实施例,并且各个权利要求和实施例的组合都在本发明的范围之内。
Claims (13)
1.一种半导体器件,包括:
封装件,包括:
第一封装部件,包括顶面上方的导电部件;
聚合物区域,模制在所述第一封装部件的所述顶面上方;以及
多个开口,从所述聚合物区域的顶面延伸到所述聚合物区域中,其中,通过所述多个开口的每一个露出所述导电部件的一个,以及其中,所述多个开口包括:
第一开口,具有第一水平尺寸;和
第二开口,具有第二水平尺寸,所述第一水平尺寸不同于所述第二水平尺寸;
第二封装部件,通过多个包含焊料的连接件接合至所述第一封装部件,其中,每一个包含焊料的连接件都包括延伸到所述多个开口中的一个的部分;
所述封装件和所述第二封装部件的组合具有负翘曲时,所述第一水平尺寸大于所述第二水平尺寸,以及其中,所述第一开口比所述第二开口更接近所述第一封装部件的中心,当中心间隔小于边缘间隔时,所述封装件和所述第二封装部件的组合具有负翘曲;或者
所述封装件和所述第二封装部件的组合具有正翘曲时,所述第一水平尺寸小于所述第二水平尺寸,以及其中,所述第一开口比所述第二开口更接近所述第一封装部件的中心,当所述中心间隔大于所述边缘间隔时,所述封装件和所述第二封装部件的组合具有正翘曲;
其中,所述中心间隔为接近所述封装件和所述第二封装部件的中心的所述封装件和所述第二封装部件的部分之间的间隔,所述边缘间隔为接近所述封装件和所述第二封装部件的边缘的所述封装件和所述第二封装部件的部分之间的间隔。
2.根据权利要求1所述的半导体器件,其中,所述第一水平尺寸在所述第二水平尺寸的50%至90%之间。
3.根据权利要求1所述的半导体器件,还包括:器件管芯,接合至所述第一封装部件并模制在所述聚合物区域中。
4.根据权利要求1所述的半导体器件,其中,在从所述第一封装部件的中心延伸到所述第一封装部件的边缘的方向上,所述多个开口的水平尺寸逐渐增加或减小。
5.一种半导体器件,包括:
封装件,包括:
第一封装部件,包括所述第一封装部件的顶面上方的导电部件;
器件管芯,接合至所述第一封装部件的顶面;
模塑料,模制在所述第一封装部件的顶面上方,其中,所述器件
管芯模制在所述模塑料中;以及
多个开口,位于所述模塑料中,其中,所述导电部件的每一个通
过所述多个开口的一个露出,以及其中,所述多个开口具有彼此不同
的至少两个水平尺寸;以及
第二封装部件,位于所述封装件的上方并通过多个焊料区域接合至所述导电部件,其中,所述多个焊料区域的部分延伸到所述多个开口中;
所述封装件和所述第二封装部件的组合具有负翘曲时,与所述多个开口中更接近所述封装件的边缘和角部的外侧开口相比,所述多个开口中更接近所述封装件的中心的内侧开口具有更大的尺寸,当中心间隔小于边缘间隔时,所述封装件和所述第二封装部件的组合具有负翘曲;或者
所述封装件和所述第二封装部件的组合具有正翘曲时,与所述多个开口中更接近所述封装件的边缘和角部的外侧开口相比,所述多个开口中更接近所述封装件的中心的内侧开口具有更小的尺寸,当所述中心间隔大于所述边缘间隔时,所述封装件和所述第二封装部件的组合具有正翘曲;
其中,所述中心间隔为接近所述封装件和所述第二封装部件的中心的所述封装件和所述第二封装部件的部分之间的间隔,所述边缘间隔为接近所述封装件和所述第二封装部件的边缘的所述封装件和所述第二封装部件的部分之间的间隔。
6.根据权利要求5所述的半导体器件,其中,所述封装件包括多个环形区域,通过所述多个环形区域的外侧区域围绕所述多个环形区域的内侧区域,以及其中,所述多个环形区域中的同一区域中的多个开口的部分具有相同的水平尺寸,以及其中,所述多个环形区域中的不同区域中的多个开口部分具有不同的水平尺寸。
7.根据权利要求5所述的半导体器件,其中,所述至少两个水平尺寸包括第一水平尺寸和第二水平尺寸,所述第一水平尺寸小于所述第二水平尺寸的90%。
8.一种制造半导体器件的方法,包括:
评估第一封装部件和封装件,以确定包括所述第一封装部件和所述封装件的组合封装件的翘曲状态,其中,所述翘曲状态包括正翘曲和负翘曲,以及其中,所述封装件包括:
器件管芯和第二封装部件,其中,所述器件管芯接合至所述第二封装部件的顶面;和
聚合物区域,模制在所述第二封装部件的顶面上方,其中,所述器件管芯模制在所述聚合物区域中;以及
在所述聚合物区域中形成多个开口以露出所述第二封装部件的顶面上方的导电部件,其中,形成所述多个开口的步骤包括:
响应于所述正翘曲,使所述多个开口中更接近所述封装件的中心的内侧开口比所述多个开口的外侧开口具有更小的水平尺寸;以及
响应于所述负翘曲,使所述多个开口中更接近所述封装件的中心的内侧开口比所述多个开口的外侧开口具有更大的水平尺寸;
其中,当中心间隔小于边缘间隔时,包括所述第一封装部件和所述封装件的组合封装件为负翘曲,当所述中心间隔大于所述边缘间隔时,包括述第一封装部件和所述封装件的组合封装件为正翘曲,所述中心间隔为接近所述封装件和所述第一封装部件的中心的所述封装件和所述第一封装部件的部分之间的间隔,所述边缘间隔为接近所述封装件和所述第一封装部件的边缘的所述封装件和所述第一封装部件的部分之间的间隔。
9.根据权利要求8所述的方法,还包括:响应于作为评估步骤结果的在所述第一封装部件和所述封装件之间没有翘曲,形成具有基本上相等的水平尺寸的多个开口。
10.根据权利要求8所述的方法,还包括:通过包含焊料的区域将所述第一封装部件接合至所述封装件,其中,所述包含焊料的区域延伸到所述多个开口中。
11.根据权利要求8所述的方法,其中,所述聚合物区域包括模塑料,以及其中,所述模塑料的顶面不低于所述器件管芯的顶面。
12.根据权利要求8所述的方法,其中,形成所述多个开口的步骤包括:将所述封装件划分为多个环状区域,所述多个环形区域的外侧区域围绕所述多个环形区域的内侧区域,以及其中,将所述多个环形区域的同一区域中的多个开口形成为具有相同的水平尺寸,并且其中,将所述多个环形区域的不同区域中的多个开口形成为具有不同的水平尺寸。
13.根据权利要求8所述的方法,其中,所述多个开口中的内侧开口和外侧开口包括较小的开口和较大的开口,以及其中,所述多个开口中的较小开口具有第一水平尺寸,所述第一水平尺寸小于所述多个开口的较大开口的90%。
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US9691745B2 (en) | 2013-06-26 | 2017-06-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Bonding structure for forming a package on package (PoP) structure and method for forming the same |
US9252076B2 (en) * | 2013-08-07 | 2016-02-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | 3D packages and methods for forming the same |
US9633869B2 (en) * | 2013-08-16 | 2017-04-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Packages with interposers and methods for forming the same |
KR20150096949A (ko) * | 2014-02-17 | 2015-08-26 | 삼성전자주식회사 | 반도체 패키지 및 그의 형성방법 |
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