CN103035486A - 同时填充及平坦化不同尺寸深沟槽的方法 - Google Patents
同时填充及平坦化不同尺寸深沟槽的方法 Download PDFInfo
- Publication number
- CN103035486A CN103035486A CN2012103679053A CN201210367905A CN103035486A CN 103035486 A CN103035486 A CN 103035486A CN 2012103679053 A CN2012103679053 A CN 2012103679053A CN 201210367905 A CN201210367905 A CN 201210367905A CN 103035486 A CN103035486 A CN 103035486A
- Authority
- CN
- China
- Prior art keywords
- deep trench
- film
- oxide
- filling
- different size
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Element Separation (AREA)
- Formation Of Insulating Films (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210367905.3A CN103035486B (zh) | 2012-09-28 | 2012-09-28 | 同时填充及平坦化不同尺寸深沟槽的方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210367905.3A CN103035486B (zh) | 2012-09-28 | 2012-09-28 | 同时填充及平坦化不同尺寸深沟槽的方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103035486A true CN103035486A (zh) | 2013-04-10 |
CN103035486B CN103035486B (zh) | 2016-06-08 |
Family
ID=48022272
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201210367905.3A Active CN103035486B (zh) | 2012-09-28 | 2012-09-28 | 同时填充及平坦化不同尺寸深沟槽的方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN103035486B (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104370266A (zh) * | 2013-08-12 | 2015-02-25 | 上海华虹宏力半导体制造有限公司 | 深沟槽中感应材料的成膜方法 |
CN108375871A (zh) * | 2018-02-06 | 2018-08-07 | 武汉新芯集成电路制造有限公司 | 一种掩膜板、制作方法及对准的方法 |
CN114758981A (zh) * | 2021-01-08 | 2022-07-15 | 和舰芯片制造(苏州)股份有限公司 | 一种使用二氧化硅填充深沟槽后的平坦化方法及晶圆 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030143817A1 (en) * | 2002-01-28 | 2003-07-31 | Ho Tzu En | Method of forming shallow trench isolation |
US20040032006A1 (en) * | 2002-08-19 | 2004-02-19 | Eun-Jung Yun | Trench structure and method of forming the same |
US20060228866A1 (en) * | 2005-03-30 | 2006-10-12 | Ryan Joseph M | Methods of filling openings with oxide, and methods of forming trenched isolation regions |
-
2012
- 2012-09-28 CN CN201210367905.3A patent/CN103035486B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030143817A1 (en) * | 2002-01-28 | 2003-07-31 | Ho Tzu En | Method of forming shallow trench isolation |
US20040032006A1 (en) * | 2002-08-19 | 2004-02-19 | Eun-Jung Yun | Trench structure and method of forming the same |
US20060228866A1 (en) * | 2005-03-30 | 2006-10-12 | Ryan Joseph M | Methods of filling openings with oxide, and methods of forming trenched isolation regions |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104370266A (zh) * | 2013-08-12 | 2015-02-25 | 上海华虹宏力半导体制造有限公司 | 深沟槽中感应材料的成膜方法 |
CN104370266B (zh) * | 2013-08-12 | 2016-04-13 | 上海华虹宏力半导体制造有限公司 | 深沟槽中感应材料的成膜方法 |
CN108375871A (zh) * | 2018-02-06 | 2018-08-07 | 武汉新芯集成电路制造有限公司 | 一种掩膜板、制作方法及对准的方法 |
CN108375871B (zh) * | 2018-02-06 | 2021-08-24 | 武汉新芯集成电路制造有限公司 | 一种掩膜板、制作方法及对准的方法 |
CN114758981A (zh) * | 2021-01-08 | 2022-07-15 | 和舰芯片制造(苏州)股份有限公司 | 一种使用二氧化硅填充深沟槽后的平坦化方法及晶圆 |
CN114758981B (zh) * | 2021-01-08 | 2023-07-04 | 和舰芯片制造(苏州)股份有限公司 | 一种使用二氧化硅填充深沟槽后的平坦化方法及晶圆 |
Also Published As
Publication number | Publication date |
---|---|
CN103035486B (zh) | 2016-06-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI409852B (zh) | 利用自對準雙重圖案製作半導體元件微細結構的方法 | |
CN101842899B (zh) | 将nvm电路与逻辑电路集成的方法 | |
CN103400794B (zh) | 自对准沟槽的形成方法 | |
CN103117243A (zh) | 反调sti形成 | |
CN105719997B (zh) | 半导体结构的形成方法 | |
JPH1079423A (ja) | 半導体デバイスの製造方法 | |
CN105340074B (zh) | Soi衬底制备方法和soi衬底 | |
CN112285827B (zh) | 一种多层硅光子器件的制备方法 | |
JP2014522568A (ja) | 深溝を有する新型pn接合の形成方法 | |
CN103035486A (zh) | 同时填充及平坦化不同尺寸深沟槽的方法 | |
CN102709229A (zh) | 一种形成钨塞的方法 | |
CN111354675B (zh) | 浅沟槽隔离结构的形成方法及浅沟槽隔离结构 | |
CN102130036B (zh) | 浅沟槽隔离结构制作方法 | |
CN102361022B (zh) | 一种嵌入式闪存的制作方法 | |
CN102054672B (zh) | 在表面起伏的衬底上形成小尺寸图形的工艺方法 | |
CN103681235A (zh) | 一种有效填充深沟槽的解决方法 | |
CN103187353A (zh) | 浅沟槽隔离区的形成方法 | |
CN109545788A (zh) | 半导体器件及其制造方法 | |
CN115274428A (zh) | 多晶硅cmp负载的改善方法 | |
CN105810637B (zh) | 一种3d nand外围器件的集成方法 | |
CN112701041B (zh) | 半导体结构及其形成方法 | |
US10141244B2 (en) | TSV layout structure and TSV interconnect structure, and fabrication methods thereof | |
CN108695152B (zh) | 一种半导体器件的制造方法 | |
CN102201371A (zh) | 沟槽的制造方法 | |
KR100954418B1 (ko) | 반도체 소자의 소자분리막 형성방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20140117 |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 201206 PUDONG NEW AREA, SHANGHAI TO: 201203 PUDONG NEW AREA, SHANGHAI |
|
TA01 | Transfer of patent application right |
Effective date of registration: 20140117 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Applicant before: Shanghai Huahong NEC Electronics Co., Ltd. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant |