CN102361022B - 一种嵌入式闪存的制作方法 - Google Patents
一种嵌入式闪存的制作方法 Download PDFInfo
- Publication number
- CN102361022B CN102361022B CN201110341995.4A CN201110341995A CN102361022B CN 102361022 B CN102361022 B CN 102361022B CN 201110341995 A CN201110341995 A CN 201110341995A CN 102361022 B CN102361022 B CN 102361022B
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- Prior art keywords
- silicon nitride
- nitride layer
- layer
- flash memory
- floating gate
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- 238000000034 method Methods 0.000 title claims abstract description 33
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 99
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 99
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 47
- 238000002955 isolation Methods 0.000 claims abstract description 18
- 239000004065 semiconductor Substances 0.000 claims abstract description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 238000001039 wet etching Methods 0.000 claims abstract description 13
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 6
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 6
- 229920005591 polysilicon Polymers 0.000 claims description 41
- 230000008569 process Effects 0.000 claims description 8
- 238000000151 deposition Methods 0.000 abstract description 6
- 239000000126 substance Substances 0.000 abstract description 3
- 230000000295 complement effect Effects 0.000 abstract 1
- 239000012774 insulation material Substances 0.000 abstract 1
- 229910044991 metal oxide Inorganic materials 0.000 abstract 1
- 150000004706 metal oxides Chemical class 0.000 abstract 1
- 238000005498 polishing Methods 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 229910003978 SiClx Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 210000003205 muscle Anatomy 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
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- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
Claims (5)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201110341995.4A CN102361022B (zh) | 2011-11-02 | 2011-11-02 | 一种嵌入式闪存的制作方法 |
Applications Claiming Priority (1)
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CN201110341995.4A CN102361022B (zh) | 2011-11-02 | 2011-11-02 | 一种嵌入式闪存的制作方法 |
Publications (2)
Publication Number | Publication Date |
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CN102361022A CN102361022A (zh) | 2012-02-22 |
CN102361022B true CN102361022B (zh) | 2017-02-08 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN201110341995.4A Active CN102361022B (zh) | 2011-11-02 | 2011-11-02 | 一种嵌入式闪存的制作方法 |
Country Status (1)
Country | Link |
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CN (1) | CN102361022B (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103822735A (zh) * | 2012-11-16 | 2014-05-28 | 无锡华润上华半导体有限公司 | 一种压力传感器用晶片结构及该晶片结构的加工方法 |
CN104576397B (zh) * | 2014-11-20 | 2017-08-25 | 上海华虹宏力半导体制造有限公司 | 分栅快闪存储器的制作方法 |
CN110828373B (zh) * | 2019-11-19 | 2022-02-22 | 上海华虹宏力半导体制造有限公司 | 半导体结构的形成方法 |
CN113506806B (zh) * | 2021-09-13 | 2022-01-28 | 广州粤芯半导体技术有限公司 | Mcu半导体器件的形成方法 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1505132A (zh) * | 2002-12-05 | 2004-06-16 | 台湾积体电路制造股份有限公司 | 浅槽与深槽隔离结构的制造方法 |
CN1518090A (zh) * | 2003-01-23 | 2004-08-04 | ��ʿͨ��ʽ���� | 半导体器件的制造方法 |
CN1533606A (zh) * | 2002-02-22 | 2004-09-29 | ض� | 相变存储器单元的双沟槽隔离结构及其制造方法 |
TW200507162A (en) * | 2003-08-01 | 2005-02-16 | Taiwan Semiconductor Mfg Co Ltd | Method to etch periphery and cell floating gate polysilicon layer separably |
CN1719599A (zh) * | 2004-07-06 | 2006-01-11 | 三洋电机株式会社 | 半导体装置的制造方法 |
KR20090080276A (ko) * | 2008-01-21 | 2009-07-24 | 주식회사 하이닉스반도체 | 비휘발성 메모리 소자의 제조 방법 |
KR20100006388A (ko) * | 2008-07-09 | 2010-01-19 | 주식회사 하이닉스반도체 | 비휘발성 메모리 장치 및 그 제조 방법 |
-
2011
- 2011-11-02 CN CN201110341995.4A patent/CN102361022B/zh active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1533606A (zh) * | 2002-02-22 | 2004-09-29 | ض� | 相变存储器单元的双沟槽隔离结构及其制造方法 |
CN1505132A (zh) * | 2002-12-05 | 2004-06-16 | 台湾积体电路制造股份有限公司 | 浅槽与深槽隔离结构的制造方法 |
CN1518090A (zh) * | 2003-01-23 | 2004-08-04 | ��ʿͨ��ʽ���� | 半导体器件的制造方法 |
TW200507162A (en) * | 2003-08-01 | 2005-02-16 | Taiwan Semiconductor Mfg Co Ltd | Method to etch periphery and cell floating gate polysilicon layer separably |
CN1719599A (zh) * | 2004-07-06 | 2006-01-11 | 三洋电机株式会社 | 半导体装置的制造方法 |
KR20090080276A (ko) * | 2008-01-21 | 2009-07-24 | 주식회사 하이닉스반도체 | 비휘발성 메모리 소자의 제조 방법 |
KR20100006388A (ko) * | 2008-07-09 | 2010-01-19 | 주식회사 하이닉스반도체 | 비휘발성 메모리 장치 및 그 제조 방법 |
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Publication number | Publication date |
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CN102361022A (zh) | 2012-02-22 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HONGLI SEMICONDUCTOR MANUFACTURE CO LTD, SHANGHAI Effective date: 20140504 |
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Effective date of registration: 20140504 Address after: 201203 Shanghai Zhangjiang hi tech park Zuchongzhi Road No. 1399 Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201203 Shanghai Guo Shou Jing Road, Pudong New Area Zhangjiang hi tech Park No. 818 Applicant before: Hongli Semiconductor Manufacture Co., Ltd., Shanghai |
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