CN103014638A - MoTi靶材及其制造方法 - Google Patents

MoTi靶材及其制造方法 Download PDF

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Publication number
CN103014638A
CN103014638A CN2012103641643A CN201210364164A CN103014638A CN 103014638 A CN103014638 A CN 103014638A CN 2012103641643 A CN2012103641643 A CN 2012103641643A CN 201210364164 A CN201210364164 A CN 201210364164A CN 103014638 A CN103014638 A CN 103014638A
Authority
CN
China
Prior art keywords
moti
powder
target
sintered compact
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2012103641643A
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English (en)
Chinese (zh)
Inventor
上滩真史
井上惠介
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Proterial Ltd
Original Assignee
Hitachi Metals Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Metals Ltd filed Critical Hitachi Metals Ltd
Publication of CN103014638A publication Critical patent/CN103014638A/zh
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C14/00—Alloys based on titanium
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C27/00—Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
    • C22C27/04—Alloys based on tungsten or molybdenum
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
CN2012103641643A 2011-09-26 2012-09-26 MoTi靶材及其制造方法 Pending CN103014638A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011208429 2011-09-26
JP2011-208429 2011-09-26

Publications (1)

Publication Number Publication Date
CN103014638A true CN103014638A (zh) 2013-04-03

Family

ID=47963746

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2012103641643A Pending CN103014638A (zh) 2011-09-26 2012-09-26 MoTi靶材及其制造方法

Country Status (4)

Country Link
JP (1) JP6037211B2 (ko)
KR (2) KR20130033322A (ko)
CN (1) CN103014638A (ko)
TW (1) TWI572725B (ko)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104602438A (zh) * 2014-12-29 2015-05-06 中国原子能科学研究院 一种吸氚靶片制备方法
CN105087982A (zh) * 2015-08-20 2015-11-25 金堆城钼业股份有限公司 一种MoTa/MoTi合金粉末的制备方法
CN106378455A (zh) * 2015-07-31 2017-02-08 汉能新材料科技有限公司 一种钼合金旋转金属管材及其制备方法
CN108884553A (zh) * 2016-03-29 2018-11-23 大同特殊钢株式会社 钛合金覆膜及钛合金靶材
CN113174573A (zh) * 2021-04-29 2021-07-27 宁波江丰电子材料股份有限公司 一种钼钛合金靶坯的制备方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6266853B1 (ja) * 2016-04-26 2018-01-24 出光興産株式会社 酸化物焼結体、スパッタリングターゲット及び酸化物半導体膜

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0770744A (ja) * 1993-09-02 1995-03-14 Hitachi Metals Ltd Ｔｉ−Ｗターゲット材およびその製造方法
CN1660526A (zh) * 2004-02-27 2005-08-31 日立金属株式会社 制备Mo合金制靶材料的方法
JP2008255440A (ja) * 2007-04-06 2008-10-23 Hitachi Metals Ltd ＭｏＴｉ合金スパッタリングターゲット材
CN101360576A (zh) * 2005-10-20 2009-02-04 H.C.施塔克公司 制造钼钛溅射板和靶的方法
JP4415303B2 (ja) * 2003-07-10 2010-02-17 日立金属株式会社 薄膜形成用スパッタリングターゲット

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5210498B2 (ja) * 2006-04-28 2013-06-12 株式会社アルバック 接合型スパッタリングターゲット及びその作製方法
JP4743645B2 (ja) * 2008-03-28 2011-08-10 日立金属株式会社 金属薄膜配線

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0770744A (ja) * 1993-09-02 1995-03-14 Hitachi Metals Ltd Ｔｉ−Ｗターゲット材およびその製造方法
JP4415303B2 (ja) * 2003-07-10 2010-02-17 日立金属株式会社 薄膜形成用スパッタリングターゲット
CN1660526A (zh) * 2004-02-27 2005-08-31 日立金属株式会社 制备Mo合金制靶材料的方法
CN101360576A (zh) * 2005-10-20 2009-02-04 H.C.施塔克公司 制造钼钛溅射板和靶的方法
JP2008255440A (ja) * 2007-04-06 2008-10-23 Hitachi Metals Ltd ＭｏＴｉ合金スパッタリングターゲット材

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104602438A (zh) * 2014-12-29 2015-05-06 中国原子能科学研究院 一种吸氚靶片制备方法
CN104602438B (zh) * 2014-12-29 2017-07-14 中国原子能科学研究院 一种吸氚靶片制备方法
CN106378455A (zh) * 2015-07-31 2017-02-08 汉能新材料科技有限公司 一种钼合金旋转金属管材及其制备方法
CN105087982A (zh) * 2015-08-20 2015-11-25 金堆城钼业股份有限公司 一种MoTa/MoTi合金粉末的制备方法
CN108884553A (zh) * 2016-03-29 2018-11-23 大同特殊钢株式会社 钛合金覆膜及钛合金靶材
CN108884553B (zh) * 2016-03-29 2021-02-23 大同特殊钢株式会社 钛合金覆膜及钛合金靶材
CN113174573A (zh) * 2021-04-29 2021-07-27 宁波江丰电子材料股份有限公司 一种钼钛合金靶坯的制备方法

Also Published As

Publication number Publication date
KR20130033322A (ko) 2013-04-03
JP2013082998A (ja) 2013-05-09
TWI572725B (zh) 2017-03-01
KR20140106468A (ko) 2014-09-03
TW201313930A (zh) 2013-04-01
JP6037211B2 (ja) 2016-12-07

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Application publication date: 20130403