CN103014638A - MoTi target material and method for manufacturing for the same - Google Patents
MoTi target material and method for manufacturing for the same Download PDFInfo
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- CN103014638A CN103014638A CN2012103641643A CN201210364164A CN103014638A CN 103014638 A CN103014638 A CN 103014638A CN 2012103641643 A CN2012103641643 A CN 2012103641643A CN 201210364164 A CN201210364164 A CN 201210364164A CN 103014638 A CN103014638 A CN 103014638A
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- moti
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C14/00—Alloys based on titanium
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C27/00—Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
- C22C27/04—Alloys based on tungsten or molybdenum
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
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- Chemical & Material Sciences (AREA)
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- Organic Chemistry (AREA)
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- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Powder Metallurgy (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The invention provides an MoTi target material and its manufacturing method, which can improve the membrane peeling problem and maintain the low resistance. The MoTi target material of the invention comprises 20-80 atomic% of Ti, Mo as the remaining part and unavoidable impurities, wherein the hydrogen as one of the unavoidable impurities is below 10 mass ppm. In addition, MoTi sintered bodies are subjected to heat treatment under the pressure less than 100Pa, at a temperature above 800 DEG C and for more than 0.5 hour, so as to obtain the MoTi target material.
Description
Technical field
The present invention relates to MoTi target and the manufacture method thereof used in the physical vapor deposition technology such as sputter.
Background technology
In recent years, in as the membrane electrode of film transistor type liquid-crystal display of one of flat display apparatus etc. and film wiring etc., gradually use the pure metal films such as low-resistance Al, Cu, Ag, Au or with they alloy films as main body.Yet these films exist as the poor problem of any one characteristic in the desired thermotolerance of electrode wiring, erosion resistance, the adaptation usually, form diffusion layer and lose the necessary problems such as electrical characteristic with other element.
Therefore, in order to address these problems, as basilar membrane or the mulch film for substrate, bring into use pure Mo, Mo alloy as refractory metal.Especially propose the MoTi film as the basilar membrane of the wiring electrode films such as Al, Cu system or the scheme of mulch film, for the target that is used to form this MoTi film, for example proposed the scheme such as patent documentation 1, patent documentation 2.
In the manufacture method of the embodiment of patent documentation 1, patent documentation 2, record the Mo powder that uses specified particle diameter and Ti powder as raw material powder, carry out pressure sintering and prepare the MoTi sintered compact, and the MoTi target that is prepared by this MoTi sintered compact.In the patent documentation 1 disclosed MoTi target be when spatter film forming, can significantly reduce splash, the target of excellence aspect the generation of particle.
The prior art document
Patent documentation
Patent documentation 1: TOHKEMY 2008-255440 communique
Patent documentation 2: TOHKEMY 2007-297654 communique
Summary of the invention
The problem that invention will solve
Through the inventor's research, can confirm the situation that exists resistance value to raise the MoTi film that patent documentation 1 disclosed MoTi target as sputter obtains.As wiring membrane, their basilar membrane or mulch film when using, resistance value is more low better.
In addition, also confirmed the situation that resulting MoTi film exists membrane stress to increase.Producing film in the increase of membrane stress and the subsequent handlings such as etching, washing the problem such as peels off, causes the reliability of electronic component to reduce relevant.
In view of above-mentioned problem, the object of the invention is to, provide and can improve the problem that film peels off and MoTi target and the manufacture method thereof that can keep low-resistance value.
For the scheme of dealing with problems
The inventor specifically studies for example patent documentation 1 disclosed MoTi target that is used to form film, can confirm that the hydrogen richness of target surpasses 100 quality ppm.And this hydrogen is to cause that above-mentioned film is peeled off, the inducement of the problem of resistance value rising, finds by more in the past than the hydrogen richness that further reduced the MoTi target, can address the above problem, thereby reach the present invention.
That is, the present invention is a kind of MoTi target, and it has and contains Ti 20 ~ 80 atom % and remainder by Mo and inevitable impurity forming of consisting of, and is below the 10 quality ppm as the hydrogen of one of described inevitable impurity.
In addition, MoTi target of the present invention can be by obtaining being lower than under the pressure of 100Pa, the condition more than 800 ℃, more than 0.5 hour the MoTi sintered compact heat-treated.
In addition, described MoTi sintered compact is preferably by following operation manufacturing:
(1) the Mo aggregate that the cohesion of Mo primary particle is formed is crushed to below the median size 10 μ m, the operation of preparation Mo powder;
(2) operation of the Ti powder below the preparation median size 50 μ m;
(3) described Mo powder is mixed the operation of preparation MoTi mixed powder according to the amount that contains Ti 20 ~ 80 atom % with described Ti powder; With
(4) described MoTi mixed powder is carried out pressure sintering, the operation of preparation MoTi sintered compact.
In addition, the pressure sintering among the present invention is that 800 ~ 1500 ℃, pressure are to carry out under 10 ~ 200MPa 1 ~ 20 hour in sintering temperature preferably.
The effect of invention
According to the present invention, the MoTi target that hydrogen richness is restricted to the limit can be provided, therefore for example use the MoTi film as wiring membrane, they basilar membrane or during mulch film, can suppress resistance value lower, and can reduce membrane stress, solve the problem that film is peeled off, the industrial value when making electronic component is very large.
Description of drawings
Fig. 1 is the photo with the target of observation by light microscope sample No.6 ~ No.11.
Embodiment
The invention is characterized in, the hydrogen richness that contains in the MoTi target as one of inevitable impurity is limited in below the 10 quality ppm.In addition, feature of the present invention also is, the method as obtaining this and having limited the MoTi target of hydrogen richness adopts thermal treatment under reduced pressure.Below, the feature of MoTi target of the present invention is elaborated.
The hydrogen as one of inevitable impurity that contains in the MoTi target of the present invention is limited in below the 10 quality ppm.Its reason is, when hydrogen richness is higher than 10 quality ppm, exists the hydrogen of being emitted by the MoTi target in sputter to cause the situation that stress increases, resistivity raises of formed MoTi film.
Herein, as mentioned above, the increase of membrane stress may the problem such as to peel off relevant with film in the subsequent handlings such as etching, washing.In addition, during as the basilar membrane of electrode or mulch film, owing to similarly be low resistance with electrode preferably, so the rising of its resistivity also becomes problem.Thereby, the hydrogen as inevitable impurity that contains in the MoTi target of the present invention is limited in below the 10 quality ppm.And, more preferably hydrogen is limited in below the 5 quality ppm.
In addition, the Ti content of MoTi target of the present invention is made as 20 ~ 80 atom %.Its reason is, when Ti content was lower than 20 atom %, the effect of erosion resistance that improves formed film was low, when surpassing 80 atom %, causes etching to reduce.
In addition, MoTi target homogeneous microstructure of the present invention, thus target material surface is fifty-fifty by sputter when sputter, can also expect to suppress the effect of the problems such as tubercle, particle.
Then, the manufacture method of MoTi target of the present invention is elaborated.
With regard to the manufacture method of MoTi target of the present invention, the MoTi sintered compact is implemented thermal treatment being lower than under the pressure of 100Pa, the condition more than 800 ℃, more than 0.5 hour, thereby can reduce the hydrogen richness in the MoTi sintered compact.In addition, among the present invention, by under this condition, implementing thermal treatment, can also suppress oxidation, the nitrogenize of MoTi sintered compact.
When thermal treatment temp is lower than 800 ℃, be difficult to fully carry out the dehydrogenation of sintered compact, so the present invention is made as thermal treatment temp more than 800 ℃.On the other hand, therefore Ti melting when thermal treatment temp is higher than 1650 ℃ is to carry out below 1650 ℃ in thermal treatment temp preferably.
In addition, when furnace pressure surpasses 100Pa, be difficult to fully carry out the dehydrogenation of sintered compact, so the present invention heat-treats being lower than under the pressure of 100Pa.On the other hand, in actual production, be decompressed to 10
-4Pa is unpractical.Preferably be decompressed to 10
-3Pa.
In addition, heat treatment time is below 0.5 hour the time, and the dehydrogenation of sintered compact is carried out insufficient, is made as in the present invention more than 0.5 hour.On the other hand, surpassing 40 hours thermal treatment is unpractical in actual production.Preferably be made as in 30 hours.
In the present invention, the above-mentioned MoTi sintered compact operation of preferably passing through following (1) ~ (4) is made.
(1) the Mo aggregate that the Mo primary particle is consisted of is crushed to below the median size 10 μ m, the operation of preparation Mo powder
In the present invention, the Mo primary particle about with particle diameter 5 μ m such as preferred example such as jet mill, impact mill etc. is linked to be network-like cavernous Mo aggregate and is crushed to below the median size 10 μ m.Thus, the present invention can improve the dispersiveness of Mo when mixing with the Ti powder.Herein, the median size of the Mo powder after the fragmentation is during greater than 10 μ m, owing in target, containing thick Mo aggregate, therefore can not fully carry out sintering, and exist relative density to reduce, be difficult to form the Ti phase in the porous section of Mo aggregate, cause the possibility of component segregation, the dispersiveness of Mo is hindered.Therefore, the present invention preferably is crushed to below the median size 10 μ m.
And the Mo powder that uses among the present invention also can use above-mentioned Mo primary particle itself so long as particle diameter is below the 10 μ m.
(2) prepare the following Ti powder of median size 50 μ m operation and
(3) aforementioned Mo powder mixes according to the amount that contains Ti 20 ~ 80 atom % with aforementioned Ti powder, the operation of preparation MoTi mixed powder
Then, prepare the following Ti powder of median size 50 μ m, example such as V-Mixer, intersection rotary blender (Cross rotary mixer), ball mill etc. mix the Mo powder after this Ti powder and the fragmentation according to the amount that contains Ti 20 ~ 80 atom %, can obtain thus uniform MoTi mixed powder.Herein, the median size that makes the Ti powder is below the 50 μ m, and its reason is, the median size of Ti powder is difficult to obtain evenly fine tissue during greater than 50 μ m in the MoTi sintered compact.
(4) aforementioned MoTi mixed powder is carried out pressure sintering, the operation of preparation MoTi sintered compact
In the present invention, by pressure sintering MoTi is implemented sintering.Pressure sintering for example can be used hot isostatic pressing, hot pressing, is that 800 ~ 1500 ℃, pressure are that 10 ~ 200MPa, 1 ~ 20 hour condition get off to carry out in sintering temperature preferably.
The selective dependency of these conditions is in the equipment of pressure sintering.For example hot isostatic pressing is easily applicable under the condition of cryogenic high pressure, and hot pressing is easily applicable under the condition of high-temperature low-pressure.In the present invention, in order to suppress pressurizing vessel under the high temperature and the reaction of Ti powder, the hot isostatic pressing of cryogenic high pressure is preferably used in pressure sintering.
And when sintering temperature was lower than 800 ℃, sintering was difficult to carry out, and is unpractical.On the other hand, when sintering temperature surpassed 1500 ℃, the device that can tolerate this temperature was limited, and the crystal growth of sintered compact becomes and significantly is difficult to obtain evenly fine tissue.
In addition, moulding pressure is when 10MPa is following, and sintering is difficult to carry out, and is unpractical.On the other hand, when moulding pressure surpassed 200MPa, existence can tolerate the limited problem of device of this pressure.
In addition, sintering time is below 1 hour the time, is difficult to carry out fully sintering.On the other hand, when sintering time surpasses 20 hours, preferably avoid from making efficient.
Need to prove, utilize hot isostatic pressing, when pressure sintering is carried out in hot pressing, preferably the MoTi mixed powder be filled into pressurizing vessel, pressurization with behind the mould, the limit heating edge reduces pressure degassed.Reduce pressure degassed preferably with the scope of 100 ~ 600 ℃ of Heating temperatures, under the decompression that is lower than normal atmosphere (101.3kPa), carry out.Its reason is, can reduce the oxygen in the resulting sintered compact.
The relative density of MoTi target of the present invention is preferably more than 95%.If the relative density of target reduces, the space that then exists in the target increases, and easily causes the generation of the tubercle that becomes the paradoxical discharge reason in sputtering process as basic point take the space.Especially relative density is less than 95% the time, and the probability that tubercle produces raises, and therefore preferred relative density is more than 100%.
Relative density among the present invention refers to, the bulk density that to measure by Archimedes's method is divided by theoretical density and multiply by 100 values that obtain, and the weighted mean form of the element simple substance that the mass ratio that described theoretical density obtains with the ratio of components by MoTi target of the present invention calculates obtains.Particularly, as the density of Mo, Ti, use respectively 10.22 * 10
3Kg/m
3, 4.50 * 10
3Kg/m
3Value, use the weighted mean form of the element simple substance that calculates with the mass ratio that is obtained by ratio of components and the value that obtains as the value of theoretical density.Compare with the target that Ti independently forms mutually with the Mo phase, the density of MoTi alloy raises, therefore MoTi target of the present invention more preferably relative density surpass 100%.
[embodiment 1]
Below embodiments of the invention are described.
At first, use jet mill that the Mo primary particle of particle diameter 5 μ m is condensed the Mo aggregate fragmentation that forms, obtain the break process Mo powder of median size 8 μ m.Then, prepare the Ti raw material powder of median size 25 μ m.Then, the rotary blender that use to intersect mixes with the Ti raw material powder resulting break process Mo powder according to the amount that atom % counts 50%Mo-50%Ti, be filled into the soft steel pressurizing vessel after, have the loam cake of degassed mouth in this pressurizing vessel welding.Then, vacuum outgas under 450 ℃ temperature through 5 hours hip treatment of maintenance under the condition of 800 ℃ of temperature, pressure 118MPa, thereby obtains the MoTi sintered compact.
Then, 300 ℃, 500 ℃, 800 ℃, 1100 ℃, 1400 ℃ at each temperature, respectively in vacuum tightness 10
-2Under the Pa resulting MoTi sintered compact is implemented 20 hours thermal treatment and obtained the MoTi target.In addition, in order to compare, according to preparing the MoTi target of not heat-treating with above-mentioned same method.
Utilize mechanical workout to take test film from each the MoTi target that obtains as mentioned above, measure hydrogen richness and relative density.Herein, relative density refers to, the bulk density that to measure by Archimedes's method is divided by theoretical density and multiply by 100 values that obtain, and described theoretical density is the weighted mean form of the element simple substance that calculates with the mass ratio that the ratio of components by MoTi target of the present invention obtains and the value that obtains.
In addition, hydrogen analytical equipment (Horiba Ltd manufacturing, the model: EMGA-921) measure of the hydrogen richness in the MoTi target by adopting thermal conductivity method.And the hydrogen richness of the mixed MoTi mixed powder that uses in this experiment is 131 quality ppm.
As shown in table 1, can confirm: MoTi target of the present invention is through the thermal treatment under specific decompression, and hydrogen richness is reduced to below the 10 quality ppm.
[table 1]
[embodiment 2]
Use jet mill that the Mo primary particle of particle diameter 5 μ m is condensed the Mo aggregate fragmentation that forms, obtain the break process Mo powder of median size 8 μ m.Then, prepare the Ti raw material powder of median size 25 μ m.Then, the rotary blender that use to intersect mixes with the Ti raw material powder resulting break process Mo powder according to the amount that atom % counts 50%Mo-50%Ti, be filled into the soft steel pressurizing vessel after, have the loam cake of degassed mouth in this pressurizing vessel welding.Then, vacuum outgas under 450 ℃ temperature through 5 hours hip treatment of maintenance under the condition of 1000 ℃ of temperature, pressure 118MPa, thereby obtains the MoTi sintered compact.
Then, 1000 ℃, 1150 ℃ at each temperature, respectively in vacuum tightness 10
-2Pa, heat treatment time are under 5 hours, 10 hours the condition resulting sintered compact to be implemented thermal treatment, obtain the MoTi target.
Utilize mechanical workout to take test film from each the MoTi target that obtains as mentioned above, measure hydrogen richness and relative density.Herein, relative density refers to, the bulk density that to measure by Archimedes's method is divided by theoretical density and multiply by 100 values that obtain, and described theoretical density is the value that the weighted mean of the element simple substance that calculates by the mass ratio that the ratio of components by MoTi target of the present invention obtains obtains.
In addition, hydrogen analytical equipment (Horiba Ltd manufacturing, the model: EMGA-921) measure of the hydrogen richness in the MoTi target by adopting thermal conductivity method.And the hydrogen richness of the mixed MoTi mixed powder that uses in this experiment is 30 quality ppm.
As shown in table 2, can confirm: MoTi target of the present invention is through the thermal treatment under specific decompression, and hydrogen richness is reduced to below the 10 quality ppm.
[table 2]
Utilize mechanical workout to take test film from the MoTi target of sample No.6 ~ No.11 of obtaining as mentioned above, with its microtexture of observation by light microscope.This result as shown in Figure 1.
Can be confirmed by this result, more improve thermal treatment temp and time expand more, then more promote alloying, tissue becomes even.
[embodiment 3]
Utilize mechanical workout to cut the MoTi target of diameter 164mm, thickness 5mm from the MoTi target of the sample No.1 that obtains as mentioned above and No.6, be welded on the copper backboard.Then, (CANON ANELVA CORPRORATION makes, model: C-3010) go up each MoTi target that installation obtains as mentioned above, form the MoTi film of thickness 300nm at glass substrate at sputter equipment.The sputtering discharge condition of this moment is under the argon gas atmosphere of pressure 0.5Pa, and power input is 1000W.
(DIA Instruments Co., Ltd. makes, model: stress and the resistivity of MCP-T400) measuring the MoTi film that obtains as mentioned above to use four terminal film resiativity testers.In addition, for membrane stress, be the MoTi film that forms 300nm at the Si wafer, (Hamamatsu Photonics K.K. makes, model: PM-3) measure its warpage to use laser displacement gauge.The stress of formed MoTi film and resistivity are shown in table 3.
[table 3]
As shown in Table 3, compare with the comparative example of sintered compact not being heat-treated, the hydrogen richness of Mo Ti target of the present invention is reduced to below the 10 quality ppm, and stress and the resistivity of the MoTi film that forms by sputter are less, can obtain high performance MoTi film.Can confirm, according to MoTi target of the present invention, can form the wiring membrane that is suitable as electronic component, their basilar membrane or the film of mulch film.
Claims (3)
1. a MoTi target is characterized in that, has to contain Ti 20 ~ 80 atom % and remainder by Mo and inevitable impurity forming of consisting of, and the hydrogen of one of inevitable impurity of described conduct is below the 10 quality ppm.
2. the manufacture method of a MoTi target is characterized in that, has the operation of under the pressure of 100Pa, the condition more than 800 ℃, more than 0.5 hour the MoTi sintered compact being heat-treated being lower than.
3. the manufacture method of MoTi target according to claim 2 is characterized in that, described MoTi sintered compact is by following operation manufacturing:
(1) the Mo aggregate that the cohesion of Mo primary particle is formed is crushed to below the median size 10 μ m, the operation of preparation Mo powder;
(2) operation of the Ti powder below the preparation median size 50 μ m;
(3) described Mo powder is mixed the operation of preparation MoTi mixed powder according to the amount that contains Ti 20 ~ 80 atom % with described Ti powder; With
(4) described MoTi mixed powder is carried out pressure sintering, the operation of preparation MoTi sintered compact.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011-208429 | 2011-09-26 | ||
| JP2011208429 | 2011-09-26 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103014638A true CN103014638A (en) | 2013-04-03 |
Family
ID=47963746
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012103641643A Pending CN103014638A (en) | 2011-09-26 | 2012-09-26 | MoTi target material and method for manufacturing for the same |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6037211B2 (en) |
| KR (2) | KR20130033322A (en) |
| CN (1) | CN103014638A (en) |
| TW (1) | TWI572725B (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104602438A (en) * | 2014-12-29 | 2015-05-06 | 中国原子能科学研究院 | Preparation method of tritium impregnated target slice |
| CN105087982A (en) * | 2015-08-20 | 2015-11-25 | 金堆城钼业股份有限公司 | Preparation method of MoTa/MoTi alloy powder |
| CN106378455A (en) * | 2015-07-31 | 2017-02-08 | 汉能新材料科技有限公司 | Molybdenum alloy rotary metal pipe material and preparation method thereof |
| CN108884553A (en) * | 2016-03-29 | 2018-11-23 | 大同特殊钢株式会社 | Titanium alloy overlay film and titanium alloy target |
| CN113174573A (en) * | 2021-04-29 | 2021-07-27 | 宁波江丰电子材料股份有限公司 | Preparation method of molybdenum-titanium alloy target blank |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI720188B (en) * | 2016-04-26 | 2021-03-01 | 日商出光興產股份有限公司 | Oxide sintered body, sputtering target and oxide semiconductor film |
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| JPH0770744A (en) * | 1993-09-02 | 1995-03-14 | Hitachi Metals Ltd | Ti-w target material and production thereof |
| CN1660526A (en) * | 2004-02-27 | 2005-08-31 | 日立金属株式会社 | Process of mfg. Mo alloyed targeting materials |
| JP2008255440A (en) * | 2007-04-06 | 2008-10-23 | Hitachi Metals Ltd | MoTi ALLOY SPUTTERING TARGET MATERIAL |
| CN101360576A (en) * | 2005-10-20 | 2009-02-04 | H.C.施塔克公司 | Methods of making molybdenum titanium sputtering plates and targets |
| JP4415303B2 (en) * | 2003-07-10 | 2010-02-17 | 日立金属株式会社 | Sputtering target for thin film formation |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5210498B2 (en) * | 2006-04-28 | 2013-06-12 | 株式会社アルバック | Joining type sputtering target and method for producing the same |
| JP4743645B2 (en) * | 2008-03-28 | 2011-08-10 | 日立金属株式会社 | Metal thin film wiring |
-
2012
- 2012-09-07 TW TW101132875A patent/TWI572725B/en active
- 2012-09-12 JP JP2012200240A patent/JP6037211B2/en active Active
- 2012-09-25 KR KR1020120106323A patent/KR20130033322A/en active Search and Examination
- 2012-09-26 CN CN2012103641643A patent/CN103014638A/en active Pending
-
2014
- 2014-07-18 KR KR1020140090885A patent/KR20140106468A/en not_active Application Discontinuation
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0770744A (en) * | 1993-09-02 | 1995-03-14 | Hitachi Metals Ltd | Ti-w target material and production thereof |
| JP4415303B2 (en) * | 2003-07-10 | 2010-02-17 | 日立金属株式会社 | Sputtering target for thin film formation |
| CN1660526A (en) * | 2004-02-27 | 2005-08-31 | 日立金属株式会社 | Process of mfg. Mo alloyed targeting materials |
| CN101360576A (en) * | 2005-10-20 | 2009-02-04 | H.C.施塔克公司 | Methods of making molybdenum titanium sputtering plates and targets |
| JP2008255440A (en) * | 2007-04-06 | 2008-10-23 | Hitachi Metals Ltd | MoTi ALLOY SPUTTERING TARGET MATERIAL |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104602438A (en) * | 2014-12-29 | 2015-05-06 | 中国原子能科学研究院 | Preparation method of tritium impregnated target slice |
| CN104602438B (en) * | 2014-12-29 | 2017-07-14 | 中国原子能科学研究院 | One kind inhales tritium target piece preparation method |
| CN106378455A (en) * | 2015-07-31 | 2017-02-08 | 汉能新材料科技有限公司 | Molybdenum alloy rotary metal pipe material and preparation method thereof |
| CN105087982A (en) * | 2015-08-20 | 2015-11-25 | 金堆城钼业股份有限公司 | Preparation method of MoTa/MoTi alloy powder |
| CN108884553A (en) * | 2016-03-29 | 2018-11-23 | 大同特殊钢株式会社 | Titanium alloy overlay film and titanium alloy target |
| CN108884553B (en) * | 2016-03-29 | 2021-02-23 | 大同特殊钢株式会社 | Titanium alloy coating and titanium alloy target |
| CN113174573A (en) * | 2021-04-29 | 2021-07-27 | 宁波江丰电子材料股份有限公司 | Preparation method of molybdenum-titanium alloy target blank |
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| Publication number | Publication date |
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| TW201313930A (en) | 2013-04-01 |
| KR20130033322A (en) | 2013-04-03 |
| KR20140106468A (en) | 2014-09-03 |
| JP6037211B2 (en) | 2016-12-07 |
| JP2013082998A (en) | 2013-05-09 |
| TWI572725B (en) | 2017-03-01 |
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