CN102995021A - 铜及铜合金的蚀刻液组合物及蚀刻方法 - Google Patents

铜及铜合金的蚀刻液组合物及蚀刻方法 Download PDF

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Publication number
CN102995021A
CN102995021A CN2012103305021A CN201210330502A CN102995021A CN 102995021 A CN102995021 A CN 102995021A CN 2012103305021 A CN2012103305021 A CN 2012103305021A CN 201210330502 A CN201210330502 A CN 201210330502A CN 102995021 A CN102995021 A CN 102995021A
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China
Prior art keywords
copper
copper alloy
etchant
layer
acid
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CN2012103305021A
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English (en)
Chinese (zh)
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高桥秀树
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Kanto Chemical Co Inc
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Kanto Chemical Co Inc
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Publication of CN102995021A publication Critical patent/CN102995021A/zh
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/18—Acidic compositions for etching copper or alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • ing And Chemical Polishing (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Weting (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
CN2012103305021A 2011-09-08 2012-09-07 铜及铜合金的蚀刻液组合物及蚀刻方法 Pending CN102995021A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011196394A JP5885971B2 (ja) 2011-09-08 2011-09-08 銅および銅合金のエッチング液
JP2011-196394 2011-09-08

Publications (1)

Publication Number Publication Date
CN102995021A true CN102995021A (zh) 2013-03-27

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ID=47924114

Family Applications (1)

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CN2012103305021A Pending CN102995021A (zh) 2011-09-08 2012-09-07 铜及铜合金的蚀刻液组合物及蚀刻方法

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Country Link
JP (1) JP5885971B2 (enrdf_load_stackoverflow)
KR (1) KR20130028014A (enrdf_load_stackoverflow)
CN (1) CN102995021A (enrdf_load_stackoverflow)
SG (1) SG188734A1 (enrdf_load_stackoverflow)
TW (1) TW201323661A (enrdf_load_stackoverflow)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105887092A (zh) * 2016-04-28 2016-08-24 华南理工大学 一种适用于臭氧回收法的pcb 酸性蚀刻液
CN110093606A (zh) * 2019-06-14 2019-08-06 大连亚太电子有限公司 一种用于pcb板的蚀刻液及其制作方法
CN110938822A (zh) * 2019-11-14 2020-03-31 浙江工业大学 一种钼/铜复合金属层的蚀刻液、蚀刻方法与应用
CN111041489A (zh) * 2020-01-03 2020-04-21 广州市豪越新能源设备有限公司 一种钼/钛合金薄膜蚀刻液组合物及其应用
CN111542648A (zh) * 2018-01-05 2020-08-14 株式会社Adeka 组合物和蚀刻方法
CN111809183A (zh) * 2020-07-14 2020-10-23 北京航空航天大学宁波创新研究院 一种铜镓合金的金相腐蚀液以及金相显示方法
CN116573782A (zh) * 2023-04-03 2023-08-11 迁安市宏奥工贸有限公司 脱硫废液的处理方法
CN118186394A (zh) * 2024-05-16 2024-06-14 苏州高芯众科半导体有限公司 Tf液晶面板刻蚀腔铝板清洁再生的方法

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6777420B2 (ja) * 2016-04-21 2020-10-28 関東化学株式会社 単層膜または積層膜のエッチング組成物または前記組成物を用いたエッチング方法
KR102205628B1 (ko) 2019-02-12 2021-01-21 김진호 구리 또는 구리 함유 금속막 식각액 조성물
CN112635553B (zh) * 2020-12-25 2022-09-16 广东省科学院半导体研究所 薄膜晶体管的制作方法和显示装置
JP7569252B2 (ja) * 2021-03-26 2024-10-17 花王株式会社 エッチング液組成物の保存方法
CN113667979A (zh) * 2021-08-05 2021-11-19 Tcl华星光电技术有限公司 铜钼金属蚀刻液及其应用
US12276033B2 (en) 2021-10-19 2025-04-15 Tokyo Electron Limited Methods for wet etching of noble metals
WO2024107260A1 (en) * 2022-11-14 2024-05-23 Tokyo Electron Limited Methods for wet etching of noble metals

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005068524A (ja) * 2003-08-27 2005-03-17 C Uyemura & Co Ltd エッチング液
JP2005085811A (ja) * 2003-09-04 2005-03-31 Advanced Display Inc エッチング液及びエッチング方法
CN101265579A (zh) * 2007-03-15 2008-09-17 东进世美肯株式会社 薄膜晶体管液晶显示装置的蚀刻液组合物
CN101460397A (zh) * 2006-06-02 2009-06-17 纳幕尔杜邦公司 单过硫酸氢钾溶液
CN101807572A (zh) * 2010-02-25 2010-08-18 友达光电股份有限公司 刻蚀液、主动组件阵列基板及其制作方法
CN101886265A (zh) * 2009-05-15 2010-11-17 关东化学株式会社 含铜层积膜用蚀刻液

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4706081B2 (ja) * 2001-06-05 2011-06-22 メック株式会社 銅または銅合金のエッチング剤ならびにエッチング法
JP4973231B2 (ja) * 2006-09-05 2012-07-11 日立化成工業株式会社 銅のエッチング処理方法およびこの方法を用いてなる配線基板と半導体パッケージ
JP5559956B2 (ja) * 2007-03-15 2014-07-23 東進セミケム株式会社 薄膜トランジスタ液晶表示装置のエッチング液組成物
US8518281B2 (en) * 2008-06-03 2013-08-27 Kesheng Feng Acid-resistance promoting composition
KR101520921B1 (ko) * 2008-11-07 2015-05-18 삼성디스플레이 주식회사 식각액 조성물, 이를 사용한 금속 패턴의 형성 방법 및 박막 트랜지스터 표시판의 제조 방법
KR20120066950A (ko) * 2010-12-15 2012-06-25 삼성전자주식회사 식각액, 이를 이용한 표시 장치 및 그 제조 방법

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005068524A (ja) * 2003-08-27 2005-03-17 C Uyemura & Co Ltd エッチング液
JP2005085811A (ja) * 2003-09-04 2005-03-31 Advanced Display Inc エッチング液及びエッチング方法
CN101460397A (zh) * 2006-06-02 2009-06-17 纳幕尔杜邦公司 单过硫酸氢钾溶液
MY142427A (en) * 2006-06-02 2010-11-30 Du Pont Potassium monopersulfate solutions
CN101265579A (zh) * 2007-03-15 2008-09-17 东进世美肯株式会社 薄膜晶体管液晶显示装置的蚀刻液组合物
CN101886265A (zh) * 2009-05-15 2010-11-17 关东化学株式会社 含铜层积膜用蚀刻液
JP2010265524A (ja) * 2009-05-15 2010-11-25 Kanto Chem Co Inc 銅含有積層膜用エッチング液
CN101807572A (zh) * 2010-02-25 2010-08-18 友达光电股份有限公司 刻蚀液、主动组件阵列基板及其制作方法

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105887092A (zh) * 2016-04-28 2016-08-24 华南理工大学 一种适用于臭氧回收法的pcb 酸性蚀刻液
CN111542648A (zh) * 2018-01-05 2020-08-14 株式会社Adeka 组合物和蚀刻方法
CN110093606A (zh) * 2019-06-14 2019-08-06 大连亚太电子有限公司 一种用于pcb板的蚀刻液及其制作方法
CN110938822A (zh) * 2019-11-14 2020-03-31 浙江工业大学 一种钼/铜复合金属层的蚀刻液、蚀刻方法与应用
CN111041489A (zh) * 2020-01-03 2020-04-21 广州市豪越新能源设备有限公司 一种钼/钛合金薄膜蚀刻液组合物及其应用
CN111041489B (zh) * 2020-01-03 2021-10-15 易安爱富(武汉)科技有限公司 一种钼/钛合金薄膜蚀刻液组合物及其应用
CN111809183A (zh) * 2020-07-14 2020-10-23 北京航空航天大学宁波创新研究院 一种铜镓合金的金相腐蚀液以及金相显示方法
CN111809183B (zh) * 2020-07-14 2022-08-09 北京航空航天大学宁波创新研究院 一种铜镓合金的金相腐蚀液以及金相显示方法
CN116573782A (zh) * 2023-04-03 2023-08-11 迁安市宏奥工贸有限公司 脱硫废液的处理方法
CN116573782B (zh) * 2023-04-03 2023-11-03 迁安市宏奥工贸有限公司 脱硫废液的处理方法
CN118186394A (zh) * 2024-05-16 2024-06-14 苏州高芯众科半导体有限公司 Tf液晶面板刻蚀腔铝板清洁再生的方法
CN118186394B (zh) * 2024-05-16 2024-08-16 苏州高芯众科半导体有限公司 Tf液晶面板刻蚀腔铝板清洁再生的方法

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JP5885971B2 (ja) 2016-03-16
KR20130028014A (ko) 2013-03-18
SG188734A1 (en) 2013-04-30
JP2013058629A (ja) 2013-03-28
TW201323661A (zh) 2013-06-16

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