KR20130028014A - 구리 및 구리 합금의 에칭액 - Google Patents

구리 및 구리 합금의 에칭액 Download PDF

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Publication number
KR20130028014A
KR20130028014A KR1020120099231A KR20120099231A KR20130028014A KR 20130028014 A KR20130028014 A KR 20130028014A KR 1020120099231 A KR1020120099231 A KR 1020120099231A KR 20120099231 A KR20120099231 A KR 20120099231A KR 20130028014 A KR20130028014 A KR 20130028014A
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KR
South Korea
Prior art keywords
copper
etching
copper alloy
weight
liquid composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020120099231A
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English (en)
Korean (ko)
Inventor
히데키 다카하시
Original Assignee
간토 가가꾸 가부시키가이샤
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Publication date
Application filed by 간토 가가꾸 가부시키가이샤 filed Critical 간토 가가꾸 가부시키가이샤
Publication of KR20130028014A publication Critical patent/KR20130028014A/ko
Withdrawn legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/18—Acidic compositions for etching copper or alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • ing And Chemical Polishing (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Weting (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
KR1020120099231A 2011-09-08 2012-09-07 구리 및 구리 합금의 에칭액 Withdrawn KR20130028014A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011196394A JP5885971B2 (ja) 2011-09-08 2011-09-08 銅および銅合金のエッチング液
JPJP-P-2011-196394 2011-09-08

Publications (1)

Publication Number Publication Date
KR20130028014A true KR20130028014A (ko) 2013-03-18

Family

ID=47924114

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020120099231A Withdrawn KR20130028014A (ko) 2011-09-08 2012-09-07 구리 및 구리 합금의 에칭액

Country Status (5)

Country Link
JP (1) JP5885971B2 (enrdf_load_stackoverflow)
KR (1) KR20130028014A (enrdf_load_stackoverflow)
CN (1) CN102995021A (enrdf_load_stackoverflow)
SG (1) SG188734A1 (enrdf_load_stackoverflow)
TW (1) TW201323661A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200098108A (ko) 2019-02-12 2020-08-20 김진호 구리 또는 구리 함유 금속막 식각액 조성물
WO2024107260A1 (en) * 2022-11-14 2024-05-23 Tokyo Electron Limited Methods for wet etching of noble metals
US12276033B2 (en) 2021-10-19 2025-04-15 Tokyo Electron Limited Methods for wet etching of noble metals

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6777420B2 (ja) * 2016-04-21 2020-10-28 関東化学株式会社 単層膜または積層膜のエッチング組成物または前記組成物を用いたエッチング方法
CN105887092B (zh) * 2016-04-28 2019-01-15 华南理工大学 一种适用于臭氧回收法的pcb酸性蚀刻液
WO2019135338A1 (ja) * 2018-01-05 2019-07-11 株式会社Adeka 組成物及びエッチング方法
CN110093606A (zh) * 2019-06-14 2019-08-06 大连亚太电子有限公司 一种用于pcb板的蚀刻液及其制作方法
CN110938822A (zh) * 2019-11-14 2020-03-31 浙江工业大学 一种钼/铜复合金属层的蚀刻液、蚀刻方法与应用
CN111041489B (zh) * 2020-01-03 2021-10-15 易安爱富(武汉)科技有限公司 一种钼/钛合金薄膜蚀刻液组合物及其应用
CN111809183B (zh) * 2020-07-14 2022-08-09 北京航空航天大学宁波创新研究院 一种铜镓合金的金相腐蚀液以及金相显示方法
CN112635553B (zh) * 2020-12-25 2022-09-16 广东省科学院半导体研究所 薄膜晶体管的制作方法和显示装置
JP7569252B2 (ja) * 2021-03-26 2024-10-17 花王株式会社 エッチング液組成物の保存方法
CN113667979A (zh) * 2021-08-05 2021-11-19 Tcl华星光电技术有限公司 铜钼金属蚀刻液及其应用
CN116573782B (zh) * 2023-04-03 2023-11-03 迁安市宏奥工贸有限公司 脱硫废液的处理方法
CN118186394B (zh) * 2024-05-16 2024-08-16 苏州高芯众科半导体有限公司 Tf液晶面板刻蚀腔铝板清洁再生的方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4706081B2 (ja) * 2001-06-05 2011-06-22 メック株式会社 銅または銅合金のエッチング剤ならびにエッチング法
JP4069387B2 (ja) * 2003-08-27 2008-04-02 上村工業株式会社 エッチング液
JP4093147B2 (ja) * 2003-09-04 2008-06-04 三菱電機株式会社 エッチング液及びエッチング方法
US7442323B2 (en) * 2006-06-02 2008-10-28 E. I. Du Pont De Nemours And Company Potassium monopersulfate solutions
JP4973231B2 (ja) * 2006-09-05 2012-07-11 日立化成工業株式会社 銅のエッチング処理方法およびこの方法を用いてなる配線基板と半導体パッケージ
KR101310310B1 (ko) * 2007-03-15 2013-09-23 주식회사 동진쎄미켐 박막트랜지스터 액정표시장치의 식각액 조성물
JP5559956B2 (ja) * 2007-03-15 2014-07-23 東進セミケム株式会社 薄膜トランジスタ液晶表示装置のエッチング液組成物
US8518281B2 (en) * 2008-06-03 2013-08-27 Kesheng Feng Acid-resistance promoting composition
KR101520921B1 (ko) * 2008-11-07 2015-05-18 삼성디스플레이 주식회사 식각액 조성물, 이를 사용한 금속 패턴의 형성 방법 및 박막 트랜지스터 표시판의 제조 방법
JP5604056B2 (ja) * 2009-05-15 2014-10-08 関東化学株式会社 銅含有積層膜用エッチング液
CN101807572A (zh) * 2010-02-25 2010-08-18 友达光电股份有限公司 刻蚀液、主动组件阵列基板及其制作方法
KR20120066950A (ko) * 2010-12-15 2012-06-25 삼성전자주식회사 식각액, 이를 이용한 표시 장치 및 그 제조 방법

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200098108A (ko) 2019-02-12 2020-08-20 김진호 구리 또는 구리 함유 금속막 식각액 조성물
US12276033B2 (en) 2021-10-19 2025-04-15 Tokyo Electron Limited Methods for wet etching of noble metals
WO2024107260A1 (en) * 2022-11-14 2024-05-23 Tokyo Electron Limited Methods for wet etching of noble metals

Also Published As

Publication number Publication date
CN102995021A (zh) 2013-03-27
JP5885971B2 (ja) 2016-03-16
SG188734A1 (en) 2013-04-30
JP2013058629A (ja) 2013-03-28
TW201323661A (zh) 2013-06-16

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PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 20120907

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid