CN102971849B - 在覆有扩散阻障层的基板上之半导体组件及其制作方法 - Google Patents

在覆有扩散阻障层的基板上之半导体组件及其制作方法 Download PDF

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Publication number
CN102971849B
CN102971849B CN201080023017.9A CN201080023017A CN102971849B CN 102971849 B CN102971849 B CN 102971849B CN 201080023017 A CN201080023017 A CN 201080023017A CN 102971849 B CN102971849 B CN 102971849B
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layer
metal substrate
semiconductor layer
assembly
insulating
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Chinese (zh)
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CN102971849A (zh
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A·卡曼斯
M·科奇士
K·麦卡锡
G·曼亭·王
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Ensurge Micropower ASA
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FILM ELECTRONIC Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/411—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by materials, geometry or structure of the substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/675—Group III-V materials, Group II-VI materials, Group IV-VI materials, selenium or tellurium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0212—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or coating of substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
  • Photovoltaic Devices (AREA)
CN201080023017.9A 2009-05-28 2010-05-27 在覆有扩散阻障层的基板上之半导体组件及其制作方法 Active CN102971849B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US18195309P 2009-05-28 2009-05-28
US61/181,953 2009-05-28
PCT/US2010/036478 WO2010138766A1 (en) 2009-05-28 2010-05-27 Semiconductor devices on diffusion barrier coated substrates and methods of making the same

Publications (2)

Publication Number Publication Date
CN102971849A CN102971849A (zh) 2013-03-13
CN102971849B true CN102971849B (zh) 2017-02-08

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US (1) US9299845B2 (enExample)
EP (1) EP2436037B1 (enExample)
JP (1) JP5729707B2 (enExample)
KR (1) KR101716655B1 (enExample)
CN (1) CN102971849B (enExample)
CA (1) CA2761748C (enExample)
SG (1) SG175709A1 (enExample)
TW (1) TWI576999B (enExample)
WO (1) WO2010138766A1 (enExample)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100037820A1 (en) * 2008-08-13 2010-02-18 Synos Technology, Inc. Vapor Deposition Reactor
KR101172147B1 (ko) 2009-02-23 2012-08-07 시너스 테크놀리지, 인코포레이티드 플라즈마에 의한 라디칼을 이용한 박막 형성 방법
SG168450A1 (en) * 2009-08-05 2011-02-28 Sony Corp Thin film transistor
US20120175384A1 (en) * 2009-09-22 2012-07-12 Medmix Systems Ag Sealed container comprising a displaceable piston
US9165971B2 (en) * 2010-10-25 2015-10-20 California Institute Of Technology Atomically precise surface engineering for producing imagers
JP5683245B2 (ja) * 2010-12-08 2015-03-11 富士フイルム株式会社 撮像素子及び撮像素子の製造方法
KR101217820B1 (ko) * 2011-01-05 2013-01-21 삼화콘덴서공업주식회사 플렉시블 적층형 박막 커패시터를 이용한 임베디드 인쇄회로기판
US8877300B2 (en) * 2011-02-16 2014-11-04 Veeco Ald Inc. Atomic layer deposition using radicals of gas mixture
US9163310B2 (en) 2011-02-18 2015-10-20 Veeco Ald Inc. Enhanced deposition of layer on substrate using radicals
US8956944B2 (en) * 2011-03-25 2015-02-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI521600B (zh) * 2011-06-03 2016-02-11 應用材料股份有限公司 在矽基材上形成高生長速率低電阻率的鍺膜之方法〈一〉
US9105779B2 (en) 2011-09-26 2015-08-11 International Business Machines Corporation Method of fabricating a flexible photovoltaic film cell with an iron diffusion barrier layer
US20130106875A1 (en) * 2011-11-02 2013-05-02 Qualcomm Mems Technologies, Inc. Method of improving thin-film encapsulation for an electromechanical systems assembly
KR20130056608A (ko) * 2011-11-22 2013-05-30 에스케이하이닉스 주식회사 상변화 메모리 장치 및 그의 제조방법
TWI563111B (en) * 2011-12-16 2016-12-21 Applied Materials Inc Film deposition using tantalum precursors
CN103861662B (zh) 2012-12-13 2016-12-21 通用电气公司 带有氧化铝阻隔层的防结焦催化剂涂层
WO2014176409A1 (en) * 2013-04-24 2014-10-30 Natcore Technology, Inc. Solar cells with patterned antireflective surfaces
KR102098573B1 (ko) * 2013-07-19 2020-05-27 삼성디스플레이 주식회사 표시패널 및 그 제조방법
KR102427696B1 (ko) * 2015-10-22 2022-08-01 삼성디스플레이 주식회사 터치 패널
US9926622B2 (en) * 2015-11-12 2018-03-27 Uchicago Argonne, Llc Methods for forming pitting resistant carbon coating
ES3039527T3 (en) 2016-06-30 2025-10-22 Nec Corp Method and apparatus for signal configuration in a wireless communication system
KR102565103B1 (ko) * 2017-04-13 2023-08-08 니트라이드 솔루션즈 인크. 열 전도 및 전기 절연을 위한 소자
KR101827929B1 (ko) * 2017-05-15 2018-02-09 주식회사 벤투스솔루션 직물형 염료감응 태양전지의 전극용 직물형 금속기판의 제조방법, 이로부터 제조된 직물형 염료감응 태양전지의 전극용 직물형 금속기판 및 이를 구비한 직물형 염료감응 태양전지
US10749004B2 (en) 2017-06-30 2020-08-18 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device having a multi-layer diffusion barrier
US10410928B2 (en) * 2017-11-28 2019-09-10 International Business Machines Corporation Homogeneous densification of fill layers for controlled reveal of vertical fins
SG11202008268RA (en) 2018-03-19 2020-10-29 Applied Materials Inc Methods for depositing coatings on aerospace components
CN117026202A (zh) * 2018-07-18 2023-11-10 应用材料公司 通过原子层沉积来沉积的抗侵蚀金属氟化物涂层
US20200024735A1 (en) * 2018-07-18 2020-01-23 Applied Materials, Inc. Erosion resistant metal fluoride coatings deposited by atomic layer deposition
US11742363B2 (en) 2018-10-22 2023-08-29 Ensurge Micropower Asa Barrier stacks for printed and/or thin film electronics, methods of manufacturing the same, and method of controlling a threshold voltage of a thin film transistor
EP3959356A4 (en) 2019-04-26 2023-01-18 Applied Materials, Inc. METHOD OF PROTECTING AEROSPACE COMPONENTS AGAINST CORROSION AND OXIDATION
CN110098269A (zh) * 2019-04-29 2019-08-06 北京铂阳顶荣光伏科技有限公司 薄膜太阳能电池及其制备方法
US11088078B2 (en) 2019-05-22 2021-08-10 Nanya Technology Corporation Semiconductor device and method for manufacturing the same
US11735791B2 (en) 2020-04-10 2023-08-22 Ensurge Micropower Asa Solid-state battery and method of making the same
CN116454139A (zh) * 2022-01-07 2023-07-18 福建金石能源有限公司 一种可靠的低耗银太阳能电池片

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040229412A1 (en) * 1999-05-10 2004-11-18 Sigurd Wagner Inverter made of complementary p and n channel transistors using a single directly-deposited microcrystalline silicon film
CN1967876A (zh) * 2005-11-16 2007-05-23 三星Sdi株式会社 薄膜晶体管及其制造方法
US20070235777A1 (en) * 2006-04-06 2007-10-11 Mitsubishi Electric Corporation Thin film transistor, manufacturing method thereof, and active matrix display apparatus
CN101136366A (zh) * 2006-08-15 2008-03-05 高菲欧股份有限公司 印刷掺杂层

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03179778A (ja) * 1989-05-08 1991-08-05 Ricoh Co Ltd 薄膜半導体形成用絶縁基板
US6001420A (en) * 1996-09-23 1999-12-14 Applied Materials, Inc. Semi-selective chemical vapor deposition
TW465017B (en) * 1999-04-13 2001-11-21 Applied Materials Inc A corrosion-resistant protective coating for an apparatus and method for processing a substrate
TW477079B (en) * 2001-03-15 2002-02-21 Uni Light Technology Inc Method to form the semiconductor device having metal substrate
KR100437765B1 (ko) * 2001-06-15 2004-06-26 엘지전자 주식회사 고온용 기판을 이용한 박막트랜지스터 제조방법과 이를 이용한 표시장치의 제조방법
CN1299360C (zh) * 2002-03-20 2007-02-07 皇家飞利浦电子股份有限公司 有源矩阵显示装置及其制造
US6642092B1 (en) * 2002-07-11 2003-11-04 Sharp Laboratories Of America, Inc. Thin-film transistors formed on a metal foil substrate
US7015640B2 (en) * 2002-09-11 2006-03-21 General Electric Company Diffusion barrier coatings having graded compositions and devices incorporating the same
JP4614633B2 (ja) * 2003-04-09 2011-01-19 株式会社半導体エネルギー研究所 電子機器
US7879696B2 (en) 2003-07-08 2011-02-01 Kovio, Inc. Compositions and methods for forming a semiconducting and/or silicon-containing film, and structures formed therefrom
US7498015B1 (en) 2004-02-27 2009-03-03 Kovio, Inc. Method of making silane compositions
US7314513B1 (en) 2004-09-24 2008-01-01 Kovio, Inc. Methods of forming a doped semiconductor thin film, doped semiconductor thin film structures, doped silane compositions, and methods of making such compositions
US7485691B1 (en) 2004-10-08 2009-02-03 Kovio, Inc Polysilane compositions, methods for their synthesis and films formed therefrom
JP2006114633A (ja) * 2004-10-13 2006-04-27 Fujitsu Ltd 半導体装置の製造方法
JP2006173446A (ja) * 2004-12-17 2006-06-29 Nikon Corp 極端紫外線用の光学素子及びこれを用いた投影露光装置
US7619248B1 (en) 2005-03-18 2009-11-17 Kovio, Inc. MOS transistor with self-aligned source and drain, and method for making the same
JP4680850B2 (ja) * 2005-11-16 2011-05-11 三星モバイルディスプレイ株式會社 薄膜トランジスタ及びその製造方法
US7309637B2 (en) * 2005-12-12 2007-12-18 Chartered Semiconductor Manufacturing, Ltd Method to enhance device performance with selective stress relief
JP5162909B2 (ja) * 2006-04-03 2013-03-13 豊田合成株式会社 半導体発光素子
US7504336B2 (en) * 2006-05-19 2009-03-17 International Business Machines Corporation Methods for forming CMOS devices with intrinsically stressed metal silicide layers
US8796125B2 (en) * 2006-06-12 2014-08-05 Kovio, Inc. Printed, self-aligned, top gate thin film transistor
US7701011B2 (en) 2006-08-15 2010-04-20 Kovio, Inc. Printed dopant layers
US7767520B2 (en) * 2006-08-15 2010-08-03 Kovio, Inc. Printed dopant layers
US7709307B2 (en) 2006-08-24 2010-05-04 Kovio, Inc. Printed non-volatile memory
WO2009046148A1 (en) * 2007-10-01 2009-04-09 Kovio, Inc. Profile engineered thin film devices and structures
US8446706B1 (en) * 2007-10-10 2013-05-21 Kovio, Inc. High precision capacitors
KR20090036698A (ko) * 2007-10-10 2009-04-15 삼성전자주식회사 반도체 장치 및 이의 제조 방법
AU2008359970A1 (en) * 2008-07-28 2010-02-04 Day4 Energy Inc. Crystalline silicon PV cell with selective emitter produced with low temperature precision etch back and passivation process
TWI387417B (zh) * 2008-08-29 2013-02-21 Ind Tech Res Inst 電路板結構及其製作方法
US20100210060A1 (en) * 2009-02-13 2010-08-19 Peter Borden Double anneal process for an improved rapid thermal oxide passivated solar cell
US20100229928A1 (en) * 2009-03-12 2010-09-16 Twin Creeks Technologies, Inc. Back-contact photovoltaic cell comprising a thin lamina having a superstrate receiver element
WO2018049192A1 (en) 2016-09-08 2018-03-15 The Board Of Trustees Of The Leland Stanford Junior University Steering wheel skin deformation display

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040229412A1 (en) * 1999-05-10 2004-11-18 Sigurd Wagner Inverter made of complementary p and n channel transistors using a single directly-deposited microcrystalline silicon film
CN1967876A (zh) * 2005-11-16 2007-05-23 三星Sdi株式会社 薄膜晶体管及其制造方法
US20070235777A1 (en) * 2006-04-06 2007-10-11 Mitsubishi Electric Corporation Thin film transistor, manufacturing method thereof, and active matrix display apparatus
CN101136366A (zh) * 2006-08-15 2008-03-05 高菲欧股份有限公司 印刷掺杂层

Also Published As

Publication number Publication date
TWI576999B (zh) 2017-04-01
KR20120030996A (ko) 2012-03-29
TW201117360A (en) 2011-05-16
EP2436037A4 (en) 2013-10-02
JP5729707B2 (ja) 2015-06-03
CA2761748C (en) 2016-01-12
CA2761748A1 (en) 2010-12-02
EP2436037A1 (en) 2012-04-04
US9299845B2 (en) 2016-03-29
CN102971849A (zh) 2013-03-13
JP2012528488A (ja) 2012-11-12
SG175709A1 (en) 2011-12-29
US20110017997A1 (en) 2011-01-27
WO2010138766A1 (en) 2010-12-02
KR101716655B1 (ko) 2017-03-15
EP2436037B1 (en) 2020-04-15

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