CN102959605A - 显示装置及其制造方法 - Google Patents
显示装置及其制造方法 Download PDFInfo
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- CN102959605A CN102959605A CN2011800043815A CN201180004381A CN102959605A CN 102959605 A CN102959605 A CN 102959605A CN 2011800043815 A CN2011800043815 A CN 2011800043815A CN 201180004381 A CN201180004381 A CN 201180004381A CN 102959605 A CN102959605 A CN 102959605A
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- 229910052721 tungsten Inorganic materials 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 239000004973 liquid crystal related substance Substances 0.000 description 5
- 238000002844 melting Methods 0.000 description 5
- 230000008018 melting Effects 0.000 description 5
- 238000010276 construction Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 102000020897 Formins Human genes 0.000 description 3
- 108091022623 Formins Proteins 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 210000002858 crystal cell Anatomy 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 3
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- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
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- 239000011159 matrix material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
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- 229910001182 Mo alloy Inorganic materials 0.000 description 1
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1216—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Geometry (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
Description
Claims (10)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2011/003653 WO2013001564A1 (ja) | 2011-06-27 | 2011-06-27 | 表示装置及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102959605A true CN102959605A (zh) | 2013-03-06 |
CN102959605B CN102959605B (zh) | 2015-11-25 |
Family
ID=47361019
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201180004381.5A Active CN102959605B (zh) | 2011-06-27 | 2011-06-27 | 显示装置及其制造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8563993B2 (zh) |
JP (1) | JP5667992B2 (zh) |
KR (1) | KR101723255B1 (zh) |
CN (1) | CN102959605B (zh) |
WO (1) | WO2013001564A1 (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106537565A (zh) * | 2014-07-17 | 2017-03-22 | 索尼公司 | 电子装置、制造电子装置的方法以及电子设备 |
CN109545129A (zh) * | 2017-09-21 | 2019-03-29 | 三星显示有限公司 | 显示装置 |
CN114093327A (zh) * | 2021-11-29 | 2022-02-25 | 合肥京东方卓印科技有限公司 | 移位寄存器、栅极驱动电路和显示基板 |
WO2022227478A1 (zh) * | 2021-04-29 | 2022-11-03 | 京东方科技集团股份有限公司 | 一种显示基板及其制作方法、显示装置 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101975533B1 (ko) * | 2012-06-29 | 2019-05-08 | 삼성디스플레이 주식회사 | 구동회로, 그를 구비하는 평판표시장치 및 구동회로의 리페어 방법 |
KR102117614B1 (ko) * | 2013-10-18 | 2020-06-02 | 삼성디스플레이 주식회사 | 박막트랜지스터 기판 및 기판의 신호선 리페어 방법 |
US9673271B2 (en) * | 2015-10-12 | 2017-06-06 | Qorvo Us, Inc. | Adaptive capacitors with reduced variation in value and in-line methods for making same |
KR102675918B1 (ko) * | 2018-10-24 | 2024-06-17 | 엘지디스플레이 주식회사 | 스토리지 캐패시터, 이를 이용한 표시 장치 및 이의 제조 방법 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001125137A (ja) * | 1999-10-28 | 2001-05-11 | Fujitsu Ltd | 液晶表示装置及び画素欠陥修復方法 |
JP2003015549A (ja) * | 2001-07-02 | 2003-01-17 | Matsushita Electric Ind Co Ltd | 表示装置及びその製造方法 |
CN101978505A (zh) * | 2008-06-12 | 2011-02-16 | 夏普株式会社 | Tft、移位寄存器、扫描信号线驱动电路、显示装置以及tft的成形方法 |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4728175A (en) * | 1986-10-09 | 1988-03-01 | Ovonic Imaging Systems, Inc. | Liquid crystal display having pixels with auxiliary capacitance |
KR940005124B1 (ko) | 1989-10-04 | 1994-06-11 | 호시덴 가부시기가이샤 | 액정표시소자 |
JP2714650B2 (ja) * | 1989-12-25 | 1998-02-16 | ホシデン・フィリップス・ディスプレイ株式会社 | 液晶表示素子 |
JPH0830826B2 (ja) * | 1990-05-14 | 1996-03-27 | シャープ株式会社 | アクティブマトリクス型表示装置の製造方法 |
JPH07119919B2 (ja) * | 1991-05-15 | 1995-12-20 | インターナショナル・ビジネス・マシーンズ・コーポレイション | 液晶表示装置 |
JP3263250B2 (ja) * | 1994-08-24 | 2002-03-04 | 株式会社東芝 | 液晶表示装置 |
JPH0990408A (ja) * | 1995-09-28 | 1997-04-04 | Toshiba Corp | 液晶表示素子 |
JP4517419B2 (ja) * | 1999-08-18 | 2010-08-04 | ソニー株式会社 | 表示装置及びその修復方法 |
TWI282457B (en) * | 2000-04-06 | 2007-06-11 | Chi Mei Optoelectronics Corp | Liquid crystal display component with defect restore ability and restoring method of defect |
JP2001330850A (ja) * | 2000-05-19 | 2001-11-30 | Sharp Corp | 液晶表示装置およびその欠陥修正方法 |
JP4274734B2 (ja) * | 2002-03-15 | 2009-06-10 | 三洋電機株式会社 | トランジスタ回路 |
JP4372413B2 (ja) * | 2002-12-18 | 2009-11-25 | シャープ株式会社 | 欠陥修正方法 |
JP4088619B2 (ja) * | 2004-01-28 | 2008-05-21 | シャープ株式会社 | アクティブマトリクス基板及び表示装置 |
TWI254828B (en) * | 2004-04-29 | 2006-05-11 | Chi Mei Optoelectronics Corp | Displaying device with special pattern for repairing the defects and the repairing method thereof |
JP4693781B2 (ja) * | 2004-11-17 | 2011-06-01 | シャープ株式会社 | アクティブマトリクス基板及び表示装置 |
JP2007298791A (ja) * | 2006-05-01 | 2007-11-15 | Mitsubishi Electric Corp | 液晶表示装置及びその欠陥修復方法 |
CN101681070B (zh) * | 2007-09-20 | 2011-08-10 | 夏普株式会社 | 有源矩阵基板、液晶面板、液晶显示单元、液晶显示装置、电视接收机、和有源矩阵基板的制造方法 |
JP2009251494A (ja) * | 2008-04-10 | 2009-10-29 | Sharp Corp | 薄膜トランジスタアレイ基板および薄膜トランジスタアレイ基板の修正方法 |
KR101247936B1 (ko) * | 2008-08-27 | 2013-03-26 | 샤프 가부시키가이샤 | 액티브 매트릭스 기판, 액정 패널, 액정 표시 유닛, 액정 표시 장치, 텔레비전 수상기, 액티브 매트릭스 기판의 제조 방법 |
WO2010116626A1 (ja) * | 2009-04-07 | 2010-10-14 | パナソニック株式会社 | 画像表示装置及びその補正方法 |
WO2011141965A1 (ja) * | 2010-05-13 | 2011-11-17 | パナソニック株式会社 | 表示装置及びその製造方法 |
-
2011
- 2011-06-27 JP JP2011553211A patent/JP5667992B2/ja active Active
- 2011-06-27 WO PCT/JP2011/003653 patent/WO2013001564A1/ja active Application Filing
- 2011-06-27 CN CN201180004381.5A patent/CN102959605B/zh active Active
- 2011-06-27 KR KR1020127010514A patent/KR101723255B1/ko active IP Right Grant
-
2012
- 2012-05-16 US US13/472,991 patent/US8563993B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001125137A (ja) * | 1999-10-28 | 2001-05-11 | Fujitsu Ltd | 液晶表示装置及び画素欠陥修復方法 |
JP2003015549A (ja) * | 2001-07-02 | 2003-01-17 | Matsushita Electric Ind Co Ltd | 表示装置及びその製造方法 |
CN101978505A (zh) * | 2008-06-12 | 2011-02-16 | 夏普株式会社 | Tft、移位寄存器、扫描信号线驱动电路、显示装置以及tft的成形方法 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106537565A (zh) * | 2014-07-17 | 2017-03-22 | 索尼公司 | 电子装置、制造电子装置的方法以及电子设备 |
CN106537565B (zh) * | 2014-07-17 | 2021-09-10 | 索尼公司 | 电子装置、制造电子装置的方法以及电子设备 |
CN109545129A (zh) * | 2017-09-21 | 2019-03-29 | 三星显示有限公司 | 显示装置 |
CN109545129B (zh) * | 2017-09-21 | 2022-06-14 | 三星显示有限公司 | 显示装置 |
WO2022227478A1 (zh) * | 2021-04-29 | 2022-11-03 | 京东方科技集团股份有限公司 | 一种显示基板及其制作方法、显示装置 |
CN114093327A (zh) * | 2021-11-29 | 2022-02-25 | 合肥京东方卓印科技有限公司 | 移位寄存器、栅极驱动电路和显示基板 |
CN114093327B (zh) * | 2021-11-29 | 2022-12-16 | 合肥京东方卓印科技有限公司 | 移位寄存器、栅极驱动电路和显示基板 |
Also Published As
Publication number | Publication date |
---|---|
US20120326176A1 (en) | 2012-12-27 |
KR101723255B1 (ko) | 2017-04-04 |
CN102959605B (zh) | 2015-11-25 |
WO2013001564A1 (ja) | 2013-01-03 |
JPWO2013001564A1 (ja) | 2015-02-23 |
KR20140023846A (ko) | 2014-02-27 |
JP5667992B2 (ja) | 2015-02-12 |
US8563993B2 (en) | 2013-10-22 |
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Owner name: JANPAN ORGANIC RATE DISPLAY CO., LTD. Free format text: FORMER OWNER: MATSUSHITA ELECTRIC INDUSTRIAL CO, LTD. Effective date: 20150428 |
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Effective date of registration: 20150428 Address after: Tokyo, Japan Applicant after: JOLED Inc. Address before: Osaka Japan Applicant before: Matsushita Electric Industrial Co.,Ltd. |
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Effective date of registration: 20231207 Address after: Tokyo, Japan Patentee after: Japan Display Design and Development Contract Society Address before: Tokyo, Japan Patentee before: JOLED Inc. |