CN102956617A - 零层光刻对准标记的制造方法 - Google Patents
零层光刻对准标记的制造方法 Download PDFInfo
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102856164A (zh) * | 2012-09-07 | 2013-01-02 | 无锡华润上华科技有限公司 | 一种提高对位标记清晰度的方法 |
CN104281020A (zh) * | 2013-07-08 | 2015-01-14 | 无锡华润上华科技有限公司 | 一种改善光刻对位能力的方法 |
CN112599500A (zh) * | 2020-12-15 | 2021-04-02 | 长江存储科技有限责任公司 | 半导体器件及其制备方法 |
CN112614823A (zh) * | 2020-12-15 | 2021-04-06 | 长江存储科技有限责任公司 | 半导体器件及其制备方法 |
CN116913897A (zh) * | 2023-06-08 | 2023-10-20 | 荣芯半导体(淮安)有限公司 | 一种半导体结构及其形成方法、相关器件 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5926720A (en) * | 1997-09-08 | 1999-07-20 | Lsi Logic Corporation | Consistent alignment mark profiles on semiconductor wafers using PVD shadowing |
US20020102811A1 (en) * | 2001-01-30 | 2002-08-01 | Farrow Reginald Conway | Alignment mark fabrication process to limit accumulation of errors in level to level overlay |
US6864152B1 (en) * | 2003-05-20 | 2005-03-08 | Lsi Logic Corporation | Fabrication of trenches with multiple depths on the same substrate |
CN1780727A (zh) * | 2003-03-31 | 2006-05-31 | 美国平达系统公司 | 用于微光学元件的保形涂层 |
CN101958237A (zh) * | 2009-07-16 | 2011-01-26 | 上海华虹Nec电子有限公司 | 形成光刻对准标记的方法 |
CN102034685A (zh) * | 2009-09-24 | 2011-04-27 | 上海华虹Nec电子有限公司 | 外延后光刻对准零层标记的方法 |
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- 2011-08-31 CN CN201110255647.5A patent/CN102956617B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5926720A (en) * | 1997-09-08 | 1999-07-20 | Lsi Logic Corporation | Consistent alignment mark profiles on semiconductor wafers using PVD shadowing |
US20020102811A1 (en) * | 2001-01-30 | 2002-08-01 | Farrow Reginald Conway | Alignment mark fabrication process to limit accumulation of errors in level to level overlay |
CN1780727A (zh) * | 2003-03-31 | 2006-05-31 | 美国平达系统公司 | 用于微光学元件的保形涂层 |
US6864152B1 (en) * | 2003-05-20 | 2005-03-08 | Lsi Logic Corporation | Fabrication of trenches with multiple depths on the same substrate |
CN101958237A (zh) * | 2009-07-16 | 2011-01-26 | 上海华虹Nec电子有限公司 | 形成光刻对准标记的方法 |
CN102034685A (zh) * | 2009-09-24 | 2011-04-27 | 上海华虹Nec电子有限公司 | 外延后光刻对准零层标记的方法 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102856164A (zh) * | 2012-09-07 | 2013-01-02 | 无锡华润上华科技有限公司 | 一种提高对位标记清晰度的方法 |
CN102856164B (zh) * | 2012-09-07 | 2016-04-13 | 无锡华润上华科技有限公司 | 一种提高对位标记清晰度的方法 |
CN104281020A (zh) * | 2013-07-08 | 2015-01-14 | 无锡华润上华科技有限公司 | 一种改善光刻对位能力的方法 |
CN112599500A (zh) * | 2020-12-15 | 2021-04-02 | 长江存储科技有限责任公司 | 半导体器件及其制备方法 |
CN112614823A (zh) * | 2020-12-15 | 2021-04-06 | 长江存储科技有限责任公司 | 半导体器件及其制备方法 |
CN116913897A (zh) * | 2023-06-08 | 2023-10-20 | 荣芯半导体(淮安)有限公司 | 一种半导体结构及其形成方法、相关器件 |
CN116913897B (zh) * | 2023-06-08 | 2024-01-23 | 荣芯半导体(淮安)有限公司 | 一种半导体结构及其形成方法、相关器件 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20140103 |
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