CN1029497C - 负电阻温度系数的厚膜热敏电阻器用组合物 - Google Patents
负电阻温度系数的厚膜热敏电阻器用组合物 Download PDFInfo
- Publication number
- CN1029497C CN1029497C CN92112077A CN92112077A CN1029497C CN 1029497 C CN1029497 C CN 1029497C CN 92112077 A CN92112077 A CN 92112077A CN 92112077 A CN92112077 A CN 92112077A CN 1029497 C CN1029497 C CN 1029497C
- Authority
- CN
- China
- Prior art keywords
- composition
- glass
- ruo
- metal oxide
- weight
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 64
- 239000000945 filler Substances 0.000 claims abstract description 14
- 229910000314 transition metal oxide Inorganic materials 0.000 claims abstract description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052845 zircon Inorganic materials 0.000 claims abstract description 4
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000002253 acid Substances 0.000 claims description 11
- 239000007787 solid Substances 0.000 claims description 11
- 229910044991 metal oxide Inorganic materials 0.000 claims description 10
- -1 platinum group metal oxide Chemical class 0.000 claims description 9
- 229910001925 ruthenium oxide Inorganic materials 0.000 claims description 4
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 3
- DBRHOLYIDDOQSD-UHFFFAOYSA-N alumane;lead Chemical compound [AlH3].[Pb] DBRHOLYIDDOQSD-UHFFFAOYSA-N 0.000 claims description 2
- 229910052797 bismuth Inorganic materials 0.000 claims description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 2
- 239000005388 borosilicate glass Substances 0.000 claims description 2
- 150000004706 metal oxides Chemical class 0.000 claims description 2
- 239000002245 particle Substances 0.000 abstract description 6
- 229910000272 alkali metal oxide Inorganic materials 0.000 abstract description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical group [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052751 metal Inorganic materials 0.000 abstract description 3
- 239000002184 metal Substances 0.000 abstract description 3
- 239000011230 binding agent Substances 0.000 abstract 1
- 239000011521 glass Substances 0.000 description 46
- 239000006185 dispersion Substances 0.000 description 13
- 239000007788 liquid Substances 0.000 description 13
- 239000000463 material Substances 0.000 description 11
- 239000000758 substrate Substances 0.000 description 11
- 239000002002 slurry Substances 0.000 description 10
- 229910017052 cobalt Inorganic materials 0.000 description 9
- 239000010941 cobalt Substances 0.000 description 9
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 9
- 239000000546 pharmaceutical excipient Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- 229910004298 SiO 2 Inorganic materials 0.000 description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 7
- 238000010304 firing Methods 0.000 description 7
- 229910006501 ZrSiO Inorganic materials 0.000 description 6
- 238000007639 printing Methods 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 238000010790 dilution Methods 0.000 description 4
- 239000012895 dilution Substances 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- 238000005245 sintering Methods 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 229910052723 transition metal Inorganic materials 0.000 description 3
- 150000003624 transition metals Chemical class 0.000 description 3
- 239000001856 Ethyl cellulose Substances 0.000 description 2
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229920001249 ethyl cellulose Polymers 0.000 description 2
- 235000019325 ethyl cellulose Nutrition 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 239000011297 pine tar Substances 0.000 description 2
- 229940068124 pine tar Drugs 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- DNIAPMSPPWPWGF-GSVOUGTGSA-N (R)-(-)-Propylene glycol Chemical compound C[C@@H](O)CO DNIAPMSPPWPWGF-GSVOUGTGSA-N 0.000 description 1
- RUJPNZNXGCHGID-UHFFFAOYSA-N (Z)-beta-Terpineol Natural products CC(=C)C1CCC(C)(O)CC1 RUJPNZNXGCHGID-UHFFFAOYSA-N 0.000 description 1
- DURPTKYDGMDSBL-UHFFFAOYSA-N 1-butoxybutane Chemical compound CCCCOCCCC DURPTKYDGMDSBL-UHFFFAOYSA-N 0.000 description 1
- 229910002515 CoAl Inorganic materials 0.000 description 1
- 206010013786 Dry skin Diseases 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 229910001111 Fine metal Inorganic materials 0.000 description 1
- 101100321817 Human parvovirus B19 (strain HV) 7.5K gene Proteins 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- ACOGMWBDRJJKNB-UHFFFAOYSA-N acetic acid;ethene Chemical compound C=C.CC(O)=O ACOGMWBDRJJKNB-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910000287 alkaline earth metal oxide Inorganic materials 0.000 description 1
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 235000013339 cereals Nutrition 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 150000002168 ethanoic acid esters Chemical class 0.000 description 1
- FKRCODPIKNYEAC-UHFFFAOYSA-N ethyl propionate Chemical compound CCOC(=O)CC FKRCODPIKNYEAC-UHFFFAOYSA-N 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 239000008240 homogeneous mixture Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 239000010954 inorganic particle Substances 0.000 description 1
- 229910003480 inorganic solid Inorganic materials 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 238000010606 normalization Methods 0.000 description 1
- 239000000075 oxide glass Substances 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920000193 polymethacrylate Polymers 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- QJVXKWHHAMZTBY-GCPOEHJPSA-N syringin Chemical compound COC1=CC(\C=C\CO)=CC(OC)=C1O[C@H]1[C@H](O)[C@@H](O)[C@H](O)[C@@H](CO)O1 QJVXKWHHAMZTBY-GCPOEHJPSA-N 0.000 description 1
- 150000003505 terpenes Chemical class 0.000 description 1
- 235000007586 terpenes Nutrition 0.000 description 1
- 229940116411 terpineol Drugs 0.000 description 1
- 239000002562 thickening agent Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/02—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
- H01C7/022—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient mainly consisting of non-metallic substances
- H01C7/023—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient mainly consisting of non-metallic substances containing oxides or oxidic compounds, e.g. ferrites
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/062—Glass compositions containing silica with less than 40% silica by weight
- C03C3/07—Glass compositions containing silica with less than 40% silica by weight containing lead
- C03C3/072—Glass compositions containing silica with less than 40% silica by weight containing lead containing boron
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
- C03C8/10—Frit compositions, i.e. in a powdered or comminuted form containing lead
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
- C03C8/20—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions containing titanium compounds; containing zirconium compounds
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/22—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions containing two or more distinct frits having different compositions
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Ceramic Engineering (AREA)
- Electromagnetism (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Thermistors And Varistors (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Glass Compositions (AREA)
- Non-Adjustable Resistors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US07/767,845 US5122302A (en) | 1991-09-30 | 1991-09-30 | Thick film NTC thermistor compositions |
| US767,845 | 1991-09-30 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1073033A CN1073033A (zh) | 1993-06-09 |
| CN1029497C true CN1029497C (zh) | 1995-08-09 |
Family
ID=25080756
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN92112077A Expired - Fee Related CN1029497C (zh) | 1991-09-30 | 1992-09-30 | 负电阻温度系数的厚膜热敏电阻器用组合物 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US5122302A (enExample) |
| EP (1) | EP0606364B1 (enExample) |
| JP (1) | JP3273610B2 (enExample) |
| KR (2) | KR0130830B1 (enExample) |
| CN (1) | CN1029497C (enExample) |
| DE (1) | DE69204074T2 (enExample) |
| TW (1) | TW234193B (enExample) |
| WO (1) | WO1993007631A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108597706A (zh) * | 2018-02-07 | 2018-09-28 | 北京大学深圳研究生院 | 一种电阻tcr调零方法 |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5242623A (en) * | 1991-08-13 | 1993-09-07 | E. I. Du Pont De Nemours And Company | Screen-printable thick film paste composition |
| US5122302A (en) * | 1991-09-30 | 1992-06-16 | E. I. Du Pont De Nemours And Company | Thick film NTC thermistor compositions |
| US5352194A (en) * | 1992-06-29 | 1994-10-04 | University Of Pittsburgh | Automated device for liposuction |
| US5491118A (en) * | 1994-12-20 | 1996-02-13 | E. I. Du Pont De Nemours And Company | Cadmium-free and lead-free thick film paste composition |
| US6146743A (en) * | 1997-02-21 | 2000-11-14 | Medtronic, Inc. | Barrier metallization in ceramic substrate for implantable medical devices |
| US5855995A (en) * | 1997-02-21 | 1999-01-05 | Medtronic, Inc. | Ceramic substrate for implantable medical devices |
| US6066271A (en) * | 1997-09-05 | 2000-05-23 | Ben Gurion University Of The Negev | Cobalt ruthenate thermistors |
| US5980785A (en) * | 1997-10-02 | 1999-11-09 | Ormet Corporation | Metal-containing compositions and uses thereof, including preparation of resistor and thermistor elements |
| US6269695B1 (en) * | 1998-03-05 | 2001-08-07 | Nartron Corporation | Analog liquid level sensor |
| JP2005259823A (ja) * | 2004-03-09 | 2005-09-22 | Tdk Corp | 有機ｐｔｃサーミスタ及びその製造方法 |
| CN101061752B (zh) * | 2004-09-30 | 2011-03-16 | 沃特洛电气制造公司 | 模块化的层状加热系统 |
| JP4791872B2 (ja) * | 2006-03-30 | 2011-10-12 | 株式会社ノリタケカンパニーリミテド | 導電性ペースト |
| CN105304242B (zh) * | 2014-07-31 | 2018-08-14 | 中国振华集团云科电子有限公司 | 一种低b值高阻值厚膜ntc浆料的制备方法 |
| CN104193305B (zh) * | 2014-08-18 | 2016-01-06 | 广东风华高新科技股份有限公司 | Ntc热敏电阻材料及其制备方法与ntc热敏电阻器及其制备方法 |
| WO2020251746A1 (en) * | 2019-06-10 | 2020-12-17 | Ferro Corporation | High adhesion resistive composition |
| KR102623406B1 (ko) | 2021-12-15 | 2024-01-11 | 주식회사와이테크 | 저저항 ntc 서미스터 후막 제조용 조성물 및 그 제조방법 |
| TWI858856B (zh) | 2023-08-09 | 2024-10-11 | 國巨股份有限公司 | 熱敏電阻膏體及其製作方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4302362A (en) * | 1979-01-23 | 1981-11-24 | E. I. Du Pont De Nemours And Company | Stable pyrochlore resistor compositions |
| US4539223A (en) * | 1984-12-19 | 1985-09-03 | E. I. Du Pont De Nemours And Company | Thick film resistor compositions |
| US4651126A (en) * | 1985-05-02 | 1987-03-17 | Shailendra Kumar | Electrical resistor material, resistor made therefrom and method of making the same |
| US4906406A (en) * | 1988-07-21 | 1990-03-06 | E. I. Du Pont De Nemours And Company | Thermistor composition |
| JPH0736361B2 (ja) * | 1989-03-22 | 1995-04-19 | 株式会社村田製作所 | 抵抗材料、その製造方法およびそれを用いた抵抗ペースト |
| US5122302A (en) * | 1991-09-30 | 1992-06-16 | E. I. Du Pont De Nemours And Company | Thick film NTC thermistor compositions |
-
1991
- 1991-09-30 US US07/767,845 patent/US5122302A/en not_active Expired - Lifetime
-
1992
- 1992-06-13 TW TW081104674A patent/TW234193B/zh active
- 1992-09-30 KR KR1019940701000A patent/KR0130830B1/ko not_active Expired - Fee Related
- 1992-09-30 EP EP92921229A patent/EP0606364B1/en not_active Expired - Lifetime
- 1992-09-30 JP JP50695793A patent/JP3273610B2/ja not_active Expired - Fee Related
- 1992-09-30 KR KR1019940701000A patent/KR940702640A/ko active Granted
- 1992-09-30 DE DE69204074T patent/DE69204074T2/de not_active Expired - Fee Related
- 1992-09-30 WO PCT/US1992/008143 patent/WO1993007631A1/en not_active Ceased
- 1992-09-30 CN CN92112077A patent/CN1029497C/zh not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108597706A (zh) * | 2018-02-07 | 2018-09-28 | 北京大学深圳研究生院 | 一种电阻tcr调零方法 |
| CN108597706B (zh) * | 2018-02-07 | 2020-05-12 | 北京大学深圳研究生院 | 一种电阻tcr调零方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| US5122302A (en) | 1992-06-16 |
| CN1073033A (zh) | 1993-06-09 |
| DE69204074T2 (de) | 1996-02-15 |
| EP0606364A1 (en) | 1994-07-20 |
| KR940702640A (ko) | 1994-08-20 |
| JPH06511112A (ja) | 1994-12-08 |
| EP0606364B1 (en) | 1995-08-09 |
| KR0130830B1 (ko) | 1998-05-15 |
| TW234193B (enExample) | 1994-11-11 |
| DE69204074D1 (de) | 1995-09-14 |
| WO1993007631A1 (en) | 1993-04-15 |
| JP3273610B2 (ja) | 2002-04-08 |
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