CN102934214A - 装载闸批式臭氧硬化 - Google Patents

装载闸批式臭氧硬化 Download PDF

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CN102934214A
CN102934214A CN2011800278030A CN201180027803A CN102934214A CN 102934214 A CN102934214 A CN 102934214A CN 2011800278030 A CN2011800278030 A CN 2011800278030A CN 201180027803 A CN201180027803 A CN 201180027803A CN 102934214 A CN102934214 A CN 102934214A
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D·卢博米尔斯基
J·D·潘松二世
K·H·弗劳德
A·汗
S·文卡特拉马
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Abstract

本发明提供一种用于以批次模式处理多个晶圆的基板处理腔室。在一个实施例中，所述腔室包括：垂直对准外壳，所述外壳具有由内部分割器分隔的第一处理区域及第二处理区域，所述第一处理区域直接定位于所述第二处理区域上方；多区域加热器，所述加热器操作性耦接至所述外壳，以加热彼此独立的所述第一处理区域及所述第二处理区域；晶圆传送器，所述传送器适于固持所述处理室内的多个晶圆，及在所述第一处理区域与所述第二处理区域之间垂直移动；气体分配系统，所述气体分配系统适于将臭氧引入所述第二区域中及将蒸汽引入所述第一处理区域中；以及排气系统，所述排气系统经设置以排出被引入所述第一处理区域及所述第二处理区域中的气体。

Description

装载闸批式臭氧硬化
相关申请案的交叉引用
本申请案主张2010年6月16日提出申请的美国临时专利申请案第61/355,527号的权益，所述案出于所有目的以引用的方式并入本文。
发明背景
自数十年前引入半导体器件以来，半导体器件几何形状已显著减小。现代半导体制造设备常规生产具有250nm、180nm及65nm的特征结构大小的器件，且新设备正在开发及实施中，以制造具有更小几何形状的器件。减小的特征结构大小在具有减小空间尺寸的器件上产生结构性特征。所述减小的尺寸又需要使用具有极低电阻系数的导电材料及具有极低介电常数的绝缘材料。
低介电常数薄膜特别为金属前介电(premetal dielectric;PMD)层及金属间介电(intermetal dielectric;IMD)层所需要，以减少互连金属化的RC时间延迟、防止不同层金属化之间的串音及减少器件功率消耗。利用早期CVD技术沉积的未掺杂氧化硅薄膜通常具有4.0至4.2范围内的介电常数(k)。相反，现今常用于半导体工业的各种碳基介电层具有低于3.0的介电常数。此等碳基介电层中的大多数在最初沉积时相对不稳定，且随后在氧环境中硬化和/或退火以增加薄膜稳定性。
发明内容
本发明的实施例关于一种适于同时硬化一批晶圆的腔室。所述腔室包括第一批式处理区域及第二批式处理区域，所述区域各自由支撑多个基板的晶圆传送器服务，每一基板定位于以平行堆迭布置的专用晶圆支撑件上。在一个实施例中，第一批式处理区域直接位于第二批式处理区域下方，且晶圆传送器操作性耦接至旋转支座，所述旋转支座在第一处理区域与第二处理区域之间升高及降低所述传送器。
尽管可在第一批式处理区域及第二批式处理区域中进行多种不同的处理操作，但本发明的一些实施例允许第二批式处理区域中的高温（例如，100至200℃）、加压（例如，200至700Torr）臭氧硬化工艺及第一批式处理区域中的N2O蒸汽退火工艺。另外，第一批式处理区域用于将晶圆装卸至腔室中。
在一个实施例中，本发明关于一种用于以批次模式处理多个晶圆的腔室。所述腔室包括：垂直对准外壳，所述外壳具有由内部分割器分隔的第一处理区域及第二处理区域，第一处理区域直接定位于第二处理区域上方；多区域加热器，所述加热器操作性耦接至所述外壳，以加热彼此独立的第一处理区域及第二处理区域；晶圆传送器，所述传送器适于固持处理腔室内的多个晶圆，及在第一处理区域与第二处理区域之间垂直移动；气体分配系统，所述气体分配系统适于将臭氧引入第二区域中，及将蒸汽引入第一处理区域中；以及排气系统，所述排气系统经设置以排出被引入第一处理区域及第二处理区域中的气体。
在另一实施例中，提供一种用于以批次模式处理多个晶圆的基板硬化腔室，所述基板硬化腔室包括：垂直对准外壳，所述外壳具有由内部分割器分隔的第一处理区域及第二处理区域，第一处理区域直接定位于第二处理区域上方；多区域加热器，所述加热器操作性耦接至所述外壳，以加热彼此独立的第一处理区域及第二处理区域；晶圆传送器，所述传送器适于固持第一处理区域或第二处理区域内的多个晶圆以用于处理；第一气体分配系统及第二气体分配系统，所述第一气体分配系统适于经由第一处理区域引入处理气体，所述第二气体分配系统适于经由第二处理区域引入处理气体；排气系统，所述排气系统经设置以排出被引入第一处理区域及第二处理区域中的处理气体；支座，所述支座操作性耦接至晶圆传送器，以将晶圆传送器移至一上部位置及一下部位置，在所述上部位置中，将所述多个晶圆定位于第二处理区域中，且在所述下部位置中，将所述多个晶圆定位于第一处理区域中；以及进出门，所述进出门可在一开启位置与一闭合密封位置之间移动，在所述开启位置中，可将晶圆装载至晶圆传送器上，且从晶圆传送器移除晶圆。
额外实施例及特征在以下描述中部分阐述，且某种程度上将在查阅本说明书之后对本领域普通技术人员变得显而易见，或可藉由实施本发明而获悉。另外，对本发明的性质及优点的进一步理解可参阅本说明书的其余部分及附图来实现，其中在所述若干附图中使用相同附图标记以代表相同组件。
附图简述
图1为根据本发明的一个实施例的硬化腔室的简化横截面图；
图2为图1所示的晶圆传送器20及支座22的简化横截面图；
图3为沿图1所示的线A-A'截取的晶圆传送器20的简化横截面图；
图4为沿图1所示的线B-B'截取的硬化腔室10的简化横截面图；
图5为根据本发明的一个实施例的图1所示的气体气室32的简化横截面图；以及
图6是示例性多腔室基板处理系统的简化说明图，包含根据本发明的批式硬化腔室。
具体实施方式
图1为根据本发明的一个实施例的硬化腔室10的简化横截面图。腔室10经垂直定向，且腔室10包括如本文所述的第一批式处理区域30及第二批式处理区域40。藉由晶圆传送器20将晶圆递送至批式处理区域30及40中的每一个，晶圆传送器20固持晶圆传送器20内的多个晶圆（亦即，一批晶圆）。在一个实施例中，晶圆传送器安装于旋转支座22上，旋转支座22允许在基板处理操作期间在处理区域30及40内旋转所述一批晶圆。
支座22进一步操作性耦接至垂直致动器24，所述垂直致动器24将晶圆传送器20提升至处理区域40中，且将晶圆传送器20从处理区域40抽出，如下所述。流量阀45允许机械手（未图示）在晶圆传送器20定位于区域40内时从晶圆传送器20装卸个别晶圆，所述机械手耦接至分度器（亦未图示）。为将晶圆装载至传送器20中，分度器将机械手升高或降低至所要位置，且机械手随后延伸经过流量阀45，且将个别晶圆置放于传送器20内的晶圆支撑件上。在一个实施例中，一次一个晶圆地将晶圆装载（及卸载）至晶圆传送器20内的空晶圆支撑件上，直至装满传送器为止。在另一实施例中，机械手包括多个独立臂，每一臂固持一晶圆，且机械手可一次将多个晶圆装载（及卸载）至传送器20中。
腔室10包括封闭处理区域30及40的外壁12及标示处理区域30与处理区域40之间的分离边界的内部分割器14。分割器14具有内间隙，所述间隙允许将晶圆传送器20升高及降低超出所述分割器。如下文将论述，当晶圆传送器20的顶部部分或底部部分与分割器14对准时，产生准密封(pseudo seal)，所述准密封抑制但并不完全阻止气体从区域30流动至区域40，且反之亦然。在一个实施例中，压力等化管道（未图示）在第一批式处理区域与第二批式处理区域之间延伸，以避免晶圆传送器上原本可能诱发的巨大力，所述力归因于当藉由垂直致动器24将晶圆传送器从一个处理区域移至另一个处理区域时可能产生的压力梯度。
气体可经由气体气室32引入批式处理区域30中，且气体可经由排气气室34从批式处理区域30排出。类似地，气体可经由气体气室42引入批式处理区域40中，且气体可经由排气气室44从批式处理区域40排出。气体气室32及42中的每一者包括沿腔室10的内表面既水平又垂直的多个进气口，如下文所论述。类似地，排气气室34及44中的每一个包括沿腔室10的相对内表面既水平又垂直布置的多个排气出口。在一个实施例中，批式处理区域30特别适于批式臭氧硬化操作，且臭氧(O3)、氧(O2)及氮(N2)的源耦接至气体气室32，而批式处理区域40特别适于蒸汽退火操作，且分子态氮(N2)、氧(O2)及蒸汽(H2O)的源耦接至气体气室42。
腔室10的真空泵及密封性质使区域30及40中的每一个内的真空处理能够在所要压力下得以实现，所述压力是基于每一区域中执行的基板处理操作来选择的。作为特定示例，在一个实施例中，所述真空泵将所述腔室抽气至约600Torr以用于臭氧硬化，且所述真空泵将所述腔室抽气至1至5Torr之间以用于腔室清洁步骤。
另外，远端等离子体系统50可安装至腔室10的上表面，且远端等离子体系统50可操作性耦接至清洁气体（例如，三氟化氮）的一或多个源。所述远端等离子体系统可流动性耦接至处理区域30及40，以便在腔室清洁操作期间将活性清洁物质引入处理区域30及40中的每一个中，以移除可在处理期间沉积于腔室10的内表面上的粒子。举例而言，在腔室30及40中分别进行的一个或多个批式硬化步骤和/或批式退火步骤之后，所述腔室清洁操作可定期发生。在一实施例中，在清洁步骤期间，在远端等离子体系统50内形成氩及NF3的等离子体，且活性清洁物质可从所述远端等离子体系统直接流动至处理区域30中。额外清洁气体（例如，更多NF3）亦可由气体气室32内的气管引入区域30中。
加热器（未图示）操作性耦接至加热室10，以用于硬化及退火操作（且必要时用于清洁操作）。所述加热器至少包括第一及第二独立控制加热区域，所述区域允许将处理区域30内的温度设定为与处理区域40内的温度不同的温度。独立温度感测器（未图示）经定位以感应出处理区域30及40中的每一者内的温度，且独立温度感测器可由计算机控制系统（未图示）使用，以视需求独立调整区域30及40中的每一个的温度。在一个实施例中，所述加热器包括耦接至外壁12的圆柱带式加热器以及耦接至所述腔室的顶壁12a及底壁12b的加热器件。如本领域普通技术人员所理解，在其它实施例中，可使用其他类型的加热器。又，在某些实施例中，可用热毯环绕腔室10及腔室10的加热器件，以将热损失减至最小。
另外，本发明的一些实施例在处理区域30的底部部分和/或在处理区域40的底部部分提供专用气管，所述气管可用于向那些处理区域提供经加热的氮气(N2)，以补偿直接位于所述区域之下的温差。例如，在一些实例中，在处理区域40中实施的处理操作可在比区域30中实施的处理操作的设定温度高出100摄氏度或更多的温度下发生。即使分割器14及平板26及28在所述两个处理区域之间提供热绝缘，但为更好地补偿此温差，将多个专用进气口围绕直接位于分割器14之上的腔室10的内周边定位。可加热气体，且经由这些入口引入气体，以当在区域30中在高于区域40的温度的温度下处理晶圆时，在所述腔室的此区域中提供额外加热。或者，可经由这些入口引入室温气体或经冷却气体，以当在区域40中在低于区域30的温度的温度下处理晶圆时，在所述腔室的此区域中提供额外冷却。在另一实施例中，所述进气口可位于平板26及28中的任一者或两者内。
参看图2，图2为所安装的晶圆传送器20的上部部分的简化横截面图，多个半导体晶圆25可定位于所述晶圆传送器内。每一个别晶圆25通常为环状（例如，硅半导体晶圆），且由专用最小接触晶圆支撑件21支撑。在一个实施例中，晶圆支撑件21包括三个支撑件凸部21a、21b及21c，所述凸部在每一晶圆的外边缘附近支撑传送器20内可固持的每一晶圆。支撑件凸部21a至21c围绕晶圆传送器20的周边均匀隔开，如图3所示。在一个特定实施例中，晶圆传送器20固持三十个晶圆，且因此晶圆传送器20具有三十组晶圆支撑件凸部21a至21c。
晶圆传送器20进一步包括上部热绝缘平板26及下部热绝缘平板28。每一个热绝缘平板26及28的直径略大于传送器内所定位的晶圆的直径。图1图示处于下部位置的晶圆传送器20，在所述下部位置中可从传送器装卸晶圆，且在所述下部位置，一旦一批完整晶圆定位于传送器中，则可在下部处理区域40内处理所述一批晶圆。如图1所示，在此下部位置，上部热绝缘平板26的下表面与分割器14接触，以在区域40内处理晶圆25时，将下部处理区域40内的环境与上部处理区域30大体隔绝。
类似地，当藉由支座22及垂直致动器将晶圆传送器20升高至用于在上部处理区域30中处理晶圆25的位置时，下部热绝缘平板28的上表面与分割器14接触，以将上部处理区域30内的环境与下部处理区域40大体隔绝。此外，热绝缘平板26及28中的每一者可由具有低导热率的材料（例如，热塑胶材料或不锈钢）制成，以在腔室壁的顶表面12a及底表面12b中将晶圆25与加热器热隔绝。分割器14亦由类似的低导热率材料制成。因此，分割器14与上部热绝缘平板26或下部热绝缘平板28的组合有助于将处理区域30及40热隔绝，故而可将处理区域30及40维持在不同操作温度下。
参看图4及图5，图4为沿图1所示的线B-B'截取的硬化腔室10的简化横截面图，图5为气体气室32的简化横截面图，气体经由入口35进入气室32，且经由腔室内壁中所形成的多个进气口36在处理区域30中循环所述气体。在一个实施例中，衬垫38帮助等化气室各处的压力，以使气流在所有入口36处被均匀引入处理区域30中。在气体气室32对面，多个排气装置37在排气气室34的内壁中形成，且出气口39用于将气体从腔室10排出至真空前极管道(vacuum foreline)中。对于气体气室42及排气气室44而言，形成类似的气体分配布置。气体气室与排气气室之间的对立关系产生气流，所述气流从气体面板横过布置于晶圆传送器20中的每一个晶圆至排气气室。在一个实施例中，为确保横过传送器20中的每一晶圆表面的均匀气体分配，将图4所示的所述多个入口36及排气装置37以垂直堆迭的方式布置，入口36及排气装置37的数量等于晶圆传送器20经设置以固持的晶圆数量。因此，在传送器20固持30个晶圆的实施例中，存在30组进气口36及排气装置37，所述进气口36及排气装置37在每一个批式处理区域30及40中被隔开，且所述进气口36及排气装置37经定位以产生横过晶圆表面的均匀气流，所述晶圆位于晶圆传送器20的特定位置上。
如先前所提及，本发明的实施例特别适用于执行臭氧硬化操作。晶圆可直接从薄膜沉积或形成腔室（例如，其中沉积需要被硬化的掺碳的氧化物或其他薄膜）传送至批式处理区域40。若以每90秒一次一个晶圆地将晶圆传送至处理区域中，且传送器20固持30个晶圆，则将耗费超过30分钟来完全装满所述传送器。在一些实例中，在薄膜沉积之后不久仍可发生除气作用(outgassing)，故处理区域40亦可充当固持区，将晶圆置于所述固持区中，直到除气作用已稳定至一点为止，在所述点上，来自传送至传送器20的最后晶圆的除气量与来自第一晶圆的除气量非常接近或一致，所述第一晶圆可具有先于最后晶圆30分钟沉积于所述第一晶圆上方的一层。在其他实施例中，将晶圆固持于单独固持区中，以允许除气作用的平衡，接着将晶圆传送至处理区域40中。
一旦晶圆就绪，则将传送器20上移至处理区域40，在处理区域40中，平板28与分割器14形成准密封。然后将晶圆进行臭氧硬化工艺。在一个实施例中，首先将氮气引入区域40中，以将晶圆加热至介于105至200℃之间的所要温度。然后，引入臭氧，以在介于200至700Torr之间的压力（在一特定实施例中为600Torr）下执行臭氧硬化。当完成硬化步骤时，可将所述晶圆传送器回降至处理区域30，且对所述晶圆进行较低温度蒸汽退火或其他后硬化处理工艺，或所述晶圆可全部从腔室10被传送至另一腔室。
硬化腔室10可操作性耦接至多腔室基板处理系统，诸如由应用材料公司制造的CenturaTM或ProducerTM系统。在此类系统中，进出门45（例如，流量阀）可对所述多腔室系统的内部腔室开启。晶圆可由机械手经由进出门45移动进出腔室10。图7图示此类系统的一个实例，在所述系统中可将腔室10整合至所述系统的前开式晶圆盒(front opening unified pod;FOUP)中的一个中。FOUP 402供应基板（例如，300mm直径晶圆），所述基板由机械臂404接收，且所述基板在被放入晶圆处理室408a至408f中的一个之前被放入低压固持区406中。第二机械臂410可用于将基板晶圆从固持区406传送至处理室408a至408f及传回。处理室408a至408f可包括一个或多个系统组件，所述系统组件用于在基板晶圆上沉积介电薄膜，或在每一个腔室408a至408f内执行其他基板处理晶圆。
尽管未在图1至图5中的任一者中图示，但本发明的一些实施例在一部分的腔室壁12内包含进气口通道或管道，所述进气口通道或管道适于将经加热或经冷却的不反应的气体（例如，N2）递送至分割器14周围的区域。当在不同温度下如此完成区域30及40中执行的工艺时，所述气体可在这些区域的通道内的腔室壁内循环，以补偿温度非均匀性。在此类实例中，例如，可使用此温度控制气流，以冷却下部腔室的上部部分，因此处理区域40中的所述腔室上部部分的温度可更接近地匹配处理区域40中的所述腔室下部部分的温度。
在腔室10中处理一批或多批晶圆之后，可藉由使远端等离子体系统50中产生的活性氟自由基流动进入腔室10来清洁所述腔室。通常将晶圆传送器20置放在中间位置，以使顶部热绝缘平板26或底部热绝缘平板28在清洁阶段期间皆不与分割器14接触。在此位置上，晶圆传送器的上部部分位于处理区域30中，而所述传送器的下部部分位于处理区域40中，且清洁气体从区域30围绕上部平板26自由流动至区域40中，以实现腔室10的上部部分与下部部分的清洁。
在已描述若干实施例后，本领域普通技术人员将认识到，在不脱离本发明的精神的情况下，可使用各种修饰例、替代构造及均等物。另外，并未描述大量熟知的工艺及器件，以避免不必要地遮蔽本发明。因此，不应将以上描述视为限制本发明的范畴。
如本文及所附权利要求书中所使用，除非本文另外明确指出，否则单数形式“一(a/an)”及“所述”包括多个指示物。因此，例如，提及“一工艺”包括多个此类工艺，且提及“所述前驱物”包括提及一个或多个前驱物及本领域普通技术人员所知的前驱物的均等物，等等。此外，用语“包括(comprise/comprising)”、“包括(include/including/includes)”在用于本说明书及所附权利要求书中时，意欲指定存在所叙述的特征结构、整数、组件或步骤，但所述用语并不排除存在或添加一个或多个其他特征结构、整数、组件、步骤、动作或群组。

Claims (13)

1.一种用于以批次模式处理多个晶圆的基板硬化腔室，所述腔室包括：
垂直对准外壳，所述外壳具有由内部分割器分隔的第一处理区域及第二处理区域，所述第一处理区域直接定位于所述第二处理区域上方；
多区域加热器，所述加热器操作性耦接至所述外壳，以加热彼此独立的所述第一处理区域及所述第二处理区域；
晶圆传送器，所述传送器适于固持所述第一处理区域或所述第二处理区域内的多个晶圆以用于处理；
第一气体分配系统及第二气体分配系统，所述第一气体分配系统适于经由所述第一处理区域引入处理气体，所述第二气体分配系统适于经由所述第二处理区域引入处理气体；
排气系统，所述排气系统经设置以排出被引入所述第一处理区域及所述第二处理区域中的处理气体；
支座，所述支座操作性耦接至所述晶圆传送器，以将所述晶圆传送器传送至上部位置及下部位置，在所述上部位置中将所述多个晶圆定位于所述第二处理区域中，且在所述下部位置中将所述多个晶圆定位于所述第一处理区域中；以及
进出门，可在开启位置与闭合密封位置之间移动所述进出门，在所述开启位置中可将晶圆装载至所述晶圆传送器上且从所述晶圆传送器移除晶圆。
2.如权利要求1所述的基板硬化腔室，进一步包括远端等离子体系统，所述远端等离子体系统经操作性耦接以将活性清洁物质引入所述硬化腔室中。
3.如权利要求1所述的基板硬化腔室，其中所述支座经操作性耦接以在基板处理期间旋转所述晶圆传送器。
4.如权利要求1所述的基板硬化腔室，其中所述晶圆传送器固持多个晶圆，每一晶圆在一连续水平位置上被支撑在支柱上，所述支柱围绕相应晶圆的外周边布置。
5.如权利要求1所述的基板硬化腔室，其中所述晶圆传送器包括顶部热绝缘平板及底部热绝缘平板，可移动所述平板，使所述平板与所述分割器接触，以在基板处理期间将所述第一处理区域与所述第二处理区域之间的流体流通最少化。
6.如权利要求1所述的基板硬化腔室，其中所述第一气体分配系统经设置以在所述第一处理区域中引入蒸汽及执行蒸汽退火，且所述第二气体分配系统经设置以在所述第二处理区域中引入臭氧及执行臭氧硬化。
7.如权利要求1所述的基板硬化腔室，进一步包括一个或多个专用进气口，以在接近所述第一处理区域及所述第二处理区域的一边界的位置处引入温度控制气体。
8.如权利要求1所述的基板硬化腔室，其中所述晶圆传送器固持三十个晶圆，所述三十个晶圆垂直堆迭在所述传送器内。
9.如权利要求1所述的基板硬化腔室，其中所述第二气体分配系统包括多个进气口，所述进气口围绕所述腔室的内周边的一部分布置，且所述排气系统包括多个排气出口，所述排气出口围绕与所述多个进气口相对的所述腔室的内周边的一部分布置。
10.如权利要求1所述的基板硬化腔室，其中所述晶圆传送器将所述多个晶圆固持于所述传送器内的多个垂直对准的晶圆位置中，且对于每一晶圆位置而言，所述第二气体分配系统包括多个进气口，所述进气口布置在与相应晶圆位置对准的位置处且围绕所述腔室的所述内周边的一部分，且所述排气系统包括多个排气出口，在与所述相应晶圆位置对准的所述多个进气口相对处，所述排气出口围绕所述腔室的所述内周边的一部分布置。
11.如权利要求1所述的基板硬化腔室，其中所述进出门操作性耦接至所述第一处理区域中的所述腔室。
12.一种用于以批次模式处理多个晶圆的基板处理腔室，所述腔室包括：
垂直对准外壳，所述外壳具有由内部分割器分隔的第一处理区域及第二处理区域，所述第一处理区域直接定位于所述第二处理区域上方；
多区域加热器，所述加热器操作性耦接至所述外壳，以加热彼此独立的所述第一处理区域及所述第二处理区域；
晶圆传送器，所述传送器适于固持所述处理腔室内的多个晶圆，及在所述第一处理区域与所述第二处理区域之间垂直移动；
气体分配系统，所述气体分配系统适于将臭氧引入所述第二区域中，及将蒸汽引入所述第一处理区域中；以及
排气系统，所述排气系统经设置以排出被引入所述第一处理区域及所述第二处理区域中的气体。
13.如权利要求12所述的基板处理腔室，进一步包括进出门，所述进出门操作性耦接至所述腔室，以允许在所述传送器定位于所述第一处理区域中时，将晶圆传送至所述晶圆传送器以及从所述晶圆传送器传送晶圆。
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