TW578215B - Method to produce components or its inter-products, vacuum-processing equipment and ultra-high-vacuum CVD-reactor - Google Patents

Abstract

A method to produce components or their inter-products, in which the components in production (a) is subjected to a handling process and then (b) several components are subjected to a common CVD-process under ultra-vacuum conditions. The handling process is a vacuum process and the components in vacuum are transferred to the CVD process.

Description

578215 V. Description of the invention (1) The present invention relates to the field of semiconductor component manufacturing or its intermediate products, or components made with the same high demand, especially to the process unit during the manufacturing of semiconductor components. The so-called component here is a ready-to-use commercial product, which may be, for example, a semiconductor wafer. The “component” must be processed during manufacture, and it finally becomes the above-mentioned component. A component (for example, a wafer) can provide one or more components after processing. For example, when a processed wafer is used as a component, one or more wafers can be provided. The wafer is a so-called component. Each of the above-mentioned components is in particular an optoelectronic component, an optical component or a micromechanical component and its intermediate products. For the deposition of various thin layers in the above process, PVD (Pliysical Vapor Deposition) and CVD (Chemical Vapor Deposition) methods are competitive. When the above-mentioned layer deposition is performed by the CVD method, there are some problems, and the present invention takes these problems as a starting point. The conventional CVD layer deposition method can be distinguished according to the residual gas partial pressure (UHV) and the process pressure (APCVD, LPCVD), which is set before or during the time when the gas (program gas) to be reacted is transferred to this process. Generally it can be divided into: • APCVD (Atmospheric Pressure CVD), where the program pressure Pp is equal to atmospheric pressure. • LPCVD (Low Pressure CVD), where the process pressure PP is set in the range of 0.1 to 100 m bar. • UHV-CVD (Ulti.a-high Vacuum CVD), in which the remaining gas is 578215 V. Description of the invention (2) The maximum body partial pressure is 10-8 mbar and the program gas pressure is in the range of 10.1 to 1 (T5mbar) UHV-CVD method and LPCVD method are competitive in specific fields (especially SiGe technology) in the manufacturing of various components / intermediate products in a semiconductor process of sufficient quality. For example, it has been disclosed in US 5 181 964 A UHV-CVD method is known in which components in the form of circular plates are positioned vertically in batches and aligned horizontally with each other in the interior of the batch, transferred to the UHV-CVD reactor, and there Coating (a horizontal “stacking”). For UHV-CVD reactors, refer to US 5 607 511, and for conventional UHV-CVD processes, refer to US 5 298 452 and US 5 906 680. In addition, refer to BS Meyerson, IBM J. Res. Develop., Vol. 34, No. 6November l990. For the batch processing of each component, refer to the applicant's following documents: • US-A-6 177 129

• US-A-5 5 1 5 986 • 7S-A-5 693 23 8. It should be noted here that if the CVD process is referred to in the present invention, it refers to a process other than plasma promotion, unless it has been indicated that it is a plasma promoter. Within the scope of the UHV-CVD method (for example, by the reactor described in US 5 1 8 1 964), batch methods are known, in which multiple components are subjected to a CVD process at the same time. Only a single component is affected by CVD. These two methods require a lower temperature of 578215. 5. Description of the invention (3) (the component must be processed carefully) and allow a lower coating rate, then the system used for CVD processing of a single component Flux has disadvantages when compared with UHV-CVD method, which can perform batch CVD processing. On the other hand, the processing of a single component in the LPCVD method can be automated in a vacuum using a CVD method or an LPCVD reactor, which includes previous- or subsequent other processing processes or processing stations. In the UHV-CVD method, the components existing in the atmosphere around the clean room during the process are transferred to or from the UHV-CVD reactor in batches, which include previous- or subsequent processing processes. As far as industrial processes are concerned, material quality is of course a decisive factor when quality requirements have been ensured. At this time, the above two competitive methods are not optimal. The object of the present invention is to provide a method for manufacturing a component or an intermediate product thereof, which can eliminate the above-mentioned disadvantages while ensuring the quality requirements; the present invention particularly relates to a process unit. The object of the present invention is achieved by a method for manufacturing a component or an intermediate product thereof, wherein the component (a) is subjected to a processing process and (b) a plurality of components are simultaneously subjected to a CVD process under the condition of ultra-high vacuum; wherein the above-mentioned processing The process is also a vacuum process and the components are transferred from the processing process to the CVD process in a vacuum. The present invention begins with one of the aforementioned competitive methods (ie, the UHV-CVD method), in which each component is subjected to a CVD process under UHV conditions in a batch manner. However, a processing process before the CVD process is also performed with 578215 V. Description of the Invention (4) The vacuum process is performed, and each component is also transferred from the processing process to the CVD process in a vacuum. The advantages of the UHV-CVD process in batch processing are still maintained. Such advantages are only known in LPCVD. Some advantages can be easily achieved in LPCVD due to the power of a single component. The vacuum process is used to achieve the processing process before the above coating process and the process is also transferred to the layer deposition process in a vacuum. In the conventional UHV-CVD method, in particular, the component is previously transported during processing. The critical phase does not appear in the atmosphere around the clean room, and the purity of the atmosphere can hardly be grasped in the expected range when considering the most stringent regulations. In the second appearance of the invention, the The object is achieved in the following manner: a plurality of components are simultaneously subjected to a common CVD process under the condition of ultra-high vacuum, and these components are disc-shaped, which are subjected to the CVD process under the condition of ultra-high vacuum in the horizontal direction. In appearance, the UHV-CVD method is provided by the above two competitive methods to achieve the purpose of cost invention. In addition, in the conventional UHV-C VD method (where components are approved Method), disc-shaped components in batches (see US 5 1 8 1 964) are disadvantageous when the components are aligned vertically before and / or after manipulation, and in terms of the automated process of the assembly The vertical alignment has great obstacles. Therefore, the above object of the present invention can also be achieved in the following manner: In the UHV-CVD batch processing of each component, as long as each component is in the shape of a circular plate, each component can be used in Subjected to the above-mentioned CVD process in a horizontally aligned manner under high vacuum conditions.

578215 V. Description of the invention (5) In a preferred embodiment of the first appearance of the method of the present invention, it is combined with the second appearance. On the one hand, the method is that the processing process is a vacuum process and thus the components are transferred to the CVD process under the conditions of U Η V in a vacuum, but the components that have formed the circular plate shape must be horizontally aligned and subjected to The above-mentioned processing process (for example, a CVD process) is transferred from the processing process to the CVD process in such a horizontal alignment. When manufacturing components of the above-mentioned form, the components are usually purified directly before the layer is deposited, as required. In the conventional UHV-CVD method, the surface to be coated in CVD must be free of contaminants and oxides, so a purification method containing one or more processing steps must be used, which is usually performed in diluted hydrofluoric acid. Each component is processed (so-called HF-Dipping) and ends. After this last step of the purification method, each component is introduced into the CVD process chamber in the shortest possible time, which can prevent the surface of the component to be coated from being contaminated when conveyed through the clean room atmosphere. . In a preferred embodiment of the method of the invention, the components are now kept in a vacuum between the purification process (which precedes the CVD process) and the CVD process. However, in the last appearance of the present invention, if each component is finally transferred to the CVD process in a vacuum, the processing process performed directly before the CVD process itself is not necessarily a purification process. As long as the vacuum is still maintained, for example, a temporary storage The process or temperature adjustment process can be performed between the purification process and the UHV-CVD process. In another advantageous method of the above two appearances of the present invention, as long as the members in the shape of a circular plate, they must be positioned horizontally on the one hand and the other 578215 on the other. V. Description of the invention (6) The planes are stacked vertically on each other to Simultaneously subjected to the CVD process. A batch can thus be formed into disk-shaped horizontally positioned components stacked on top of each other. Although the components can be subjected to a batch process (before the CVD process), and in particular, the components are transferred to the CVD process in a batch manner, it is preferable to stack them by individual transport during the CVD process. The individual components, and preferably also the individual transports, cause the stack to be removed. Therefore, the advantage that can be achieved is that individual conveyances can be used in the corresponding conveyance control of each component, although batch processing can be completely used in layer deposition. This is particularly advantageous for the manufacture of semiconductor components. The size of the wafer is 200 m it ix200mm or the diameter of the wafer is 200mm, and the batch conveying is more labor-saving. Using the implementation form of the method of the present invention so far, it also uses the CVD reactor or vacuum processing of the present invention Equipment, it can automatically handle disc-shaped components (especially wafers larger than 2000 mm X 2000 mm) and at least 3 00] iimx300nim (or diameter at least 300mm) components 0 related components The larger, the more advantageous is the transport of the component in the individual operations on the batch transport. With this method, there is actually no limit to the size of the wafer. In another advantageous implementation of the method of the present invention, each component is subjected to two or more processing operations. At this time, the CVD process is performed at Under ultra-high vacuum, each component is sequentially transferred from one operation to another in a vacuum, and it is performed at least in a single piece along a linear- and / or circular section in the form of a conveying track. 0 -8-

578215 V. Description of the invention (7) The CVD process becomes a program station under the condition of ultra-high vacuum and is integrated in a multi-process process, that is, integrated into a Cluster process. The components can be freely programmed in a central transfer room in a vacuum or they can be transported from one process station to another in a predetermined sequence and processed there. In addition to the UHV-CVD process described above, the operations performed on the program station can be, for example, in / out operations, purification operations, other coating operations. 5 Etching operations, implant operations, air conditioning operations (for example, to achieve a predetermined Temperature), temporary storage operation. In another advantageous embodiment of the method, a plasma-facilitated reactive processing process must be performed on each component before and / or after at least one of the UHV-CVD processes used in the present invention. In the most advantageous implementation form > Reactive plasma-facilitated reactive processing is operated by low-energy plasma discharge. The ion energy E on the surface of the processed components is 0 eV < 15 eV. It is more preferably a combination of the CVD process of the present invention and the reaction n'M m process promoted by low-energy plasma, and the plasma-promoted CVD process (but especially the reactive purification process promoted by plasma). The advantage of this combination is that the low-energy plasma process before the UHV process can be optimally adjusted according to the surface conditions in terms of its surface effect during the UHV-CVD process. One or more low-energy plasma-promoted purification processes, especially in hydrogen- and / or nitrogen process gases, are carried out directly or using other intermediate processes (such as y air-conditioning processes) and before the UHV-CVD process. j Its conventional passivation can keep the related surfaces in the UHV-CVD process with extremely reliable purity. -9-

578215 V. Description of the invention (8) For the purification process mentioned above, the following documents of the applicant can be referred to: • W0 97/39472 • W0 00/48779 and US-Application • 09/792 055. These decontamination methods allow the cleaned surfaces to be stored in air before being combined. They allow an optimized UHV-CVD coating, although the surfaces are only subjected to various "low pressure" vacuum conditions before UHV conditions. In a particularly advantageous implementation form, a low-energy plasma-promoted reactive purification process is performed directly before the CVD process. In another advantageous embodiment of the method of the invention, a gas flow (preferably with hydrogen) is maintained in the reaction chamber while the reaction chamber / loads and / or unloads the components to be processed in the CVD process. Gas). This will ensure that the openings required during loading and / or unloading of the reaction chamber will not be contaminated. 0 As described above, when the layers are grown by the CVD method in the fabrication of semiconductor components, a uniform coating during the coating process Temperature distribution is important. This is achieved in the conventional CVD method under ultra-high vacuum conditions; outside the UHV reactor (β 卩, in the normal atmosphere of a clean room), a zone is distributed along the outer wall of the reactor. Segmented heating element. By adjusting multiple heating elements and their respective thermal powers, the temperature uniformity in the reaction chamber can be optimized. In a preferred implementation of this method, the average temperature and temperature distribution in the reaction chamber (where the c V D process is performed) must be measured and controlled. -10-

V. Description of the invention (9) But more importantly: the average temperature and temperature distribution of these components processed in the CVD process must be controlled. In a preferred implementation, it is therefore recommended that the average temperature and temperature distribution of each component itself be measured and controlled during the CVD process. As described above, the reaction chamber of the conventional UHV-CVD reactor is heated by heating elements, and each heating element is arranged along the outer wall. In another preferred embodiment, the temperature in the reaction chamber is adjusted by a heating element arranged in a vacuum in a vacuum container surrounding the reaction chamber. In another advantageous embodiment, the reaction chamber used in the CVD process is first evacuated to an ultra-high vacuum of at least 1 T8 mbar, and then the total pressure is increased to the process pressure by introducing a process gas or a mixture thereof into the reaction chamber, wherein The reaction chamber is surrounded by a vacuum, and the total pressure is in the range of the program pressure, preferably lower. Therefore, the reaction chamber does not need to be in a vacuum seal with respect to the surrounding vacuum, and a still-diffused gas (which The conditions in the reaction chamber are hardly affected) from the reaction chamber into the surrounding vacuum. In another advantageous embodiment, the reaction chamber and the surrounding vacuum are arranged in a container located outside the surrounding atmosphere, and the components are The reaction chamber used for loading and / or unloading is connected to the loading / unloading port of the container through the vacuum around the reaction chamber. In another preferred embodiment, the reaction chamber for the CVD process is introduced into each component. After neutralization, a gas is introduced into the reaction chamber, preferably containing hydrogen and / or a process gas or a mixture thereof. With the introduction of a gas and its corresponding Conductivity can be increased by -1 1-V. Description of the invention (10) Each component achieves its thermal equilibrium state. In the scope of the present invention, it is important that the components introduced into the reaction chamber of the CVD process should be as fast as possible It achieves its thermal balance without interference. When this kind of demand is met, the material flux of this process can be increased. In the third aspect of the present invention, a method for manufacturing the above-mentioned component and its intermediate product is provided, in which a plurality of components Under the condition of ultra-high vacuum, a common CVD process is performed, and each component is heated by a heating element, wherein the above-mentioned heating element is thermally connected to each component through vacuum. In a preferred embodiment, Each component is held on a carrier during the CVD process, and some heating elements are provided on the carrier, which preferably correspond to the respective components. Therefore, the heat can be directly optimized between the heating elements and the components. Invasion, these heating elements can be used as adjustment elements for the average temperature or temperature distribution on each component. In particular, the adjustment of the average temperature on each component and / Or as far as the temperature distribution of these components is concerned, it is possible to measure the respective actual temperature, actual temperature or actual temperature distribution directly on the respective components as much as possible. When the temperature setter (ie, the heating element) is narrow in thermal properties, When coupled with each component, the temperature distribution must be adjusted in particular. In another embodiment of the third appearance of the present invention, during the CVD process, each component is held on a carrier, and is preferably provided on the carrier corresponding to each component. Heat detector. In a highly advantageous embodiment of the method, the first, second and third appearances of the present invention can be combined. In order to achieve the above-mentioned purpose, a vacuum chamber is provided in the first appearance. (11) Description of the invention (11) physical equipment (including an ultra-high vacuum CVD reactor). Multiple carriers for the components to be processed in the reactor are present in the equipment, the reactor has at least one loading one / go Loading port, this opening can communicate with the vacuum conveying chamber for each component. In the second appearance described above, an ultra-high vacuum CVD reactor is provided, which has a plurality of carriers for the components to be processed in the reactor at the same time. This carrier is used to accommodate the components in the form of a circular plate in a horizontal position. Vertically stacked. Other preferred embodiments of the vacuum processing equipment and the ultra-high vacuum CVD reactor of the present invention can be known from the following description and are particularly described in the patent application Nos. 23 to 45. The process of the present invention specifically uses a CVD process to deposit a single atomic layer or various layer systems (so-called atomic layer deposition) and / or to coat each surface with a deeper profile, such as a trench or Structures in the form of holes, whose width / depth ratio is 1: 5 or less (1: 10, 1: 20, ...) (so-called deep trenches) and / or used for depositing epitaxial layers or heterogeneous Jiajing layers . The present invention will be described in detail below with reference to the drawings. Brief description of the drawings: Figure 1 is the principle of the vacuum processing equipment operating according to the method of the invention in the appearance of the invention. Fig. 2 is similar to Fig. 1 and shows a UHV_CVD reactor operating according to the method of the present invention in the second aspect of the present invention.

Figure 3 is similar to Figure 1 or Figure 2. It is a vacuum processing equipment operated according to the method of the present invention, which has UHV-CVD • 13- 578215 shown in Figure 2. V. Description of the invention (12) Reactor. Fig. 4 is a longitudinal section of the UHV-CVD reactor of the present invention, which is used to perform the method of the present invention. Fig. 5 is a partial block diagram of the UHV-CVD reactor according to the present invention. As shown in Fig. 4, it has a heating element for temperature adjustment and an adjustment circuit inside the reaction chamber. Fig. 6 is a block diagram of a component and a carrier used in the UHV-CVD reactor of the present invention, and a temperature measuring device and a temperature reader are directly provided in each component itself. Fig. 7 is a vacuum processing apparatus of the present invention, which is operated according to the method of the present invention and is constituted by a cluster type apparatus, which is preferably provided with at least one UHV-CVD reactor. Fig. 1 is a vacuum processing apparatus of the present invention, and is particularly used for carrying out the manufacturing method of the present invention. The UHV-CVD reactor 1 has a carrier 3 for a batch of a plurality of components to be processed. With the vacuum pump configuration 5, the reaction chamber R in the reactor 1 can be pumped to a maximum pressure of 10-8 mbar. As required by the CVD process, a process gas or a mixture G thereof is introduced into the reactor 1 from a gas tank configuration 7, and in order to activate the process gas G, the components 4 on the carrier 3 are configured by heating as shown in the figure 9 and heated to the desired reaction temperature. The UHV-CVD reactor 1 has a loading / unloading port 1 1 which can be closed or opened by a valve. In the first appearance of the present invention, the opening 11 allows the reaction chamber R of the UHV-CVD reactor 1 to be connected to the vacuum conveying chamber 13, as shown in the vacuum pump configuration 15, the vacuum conveying chamber 13 is maintained at -14 during operation -578215 V. Description of the invention (13) Vacuum. A conveying arrangement indicated by a double arrow τ causes each component to be conveyed to or output from the reactor 1. At least another processing chamber 17 is connected to the transfer chamber 1 3, which involves a noise chamber (or isolation chamber), another vacuum transfer chamber, a coating chamber, a purification chamber, an etching chamber, a heating chamber, and a temporary storage chamber. Chamber, an implantation chamber. It is important in the first appearance of the present invention that the batch carrier 3 of the UHV-CVD reactor 1 is loaded and / or unloaded through the vacuum conveying chamber 13 and each component is under the condition of ultra-high vacuum Before being subjected to the CVD process in reactor 1, it was directly in a vacuum. In a preferred manner, the other chamber 17 (which is directly connected to the reactor 1 when the transport configuration T is in operation) is a vacuum chamber, as shown in FIG. 1 with a pump configuration 19, which is particularly a field ( insitu) Clean room. When the vacuum is not interrupted, each component is transported (T) from the chamber 17 to the reactor. The individual components are all processed simultaneously on the carrier 3 in a batch manner. Fig. 2 is similar to Fig. 1 and relates to the manufacturing method and the corresponding UHV-CVD reactor in the second appearance of the present invention. In the ultra-high vacuum CVD reactor 1b of the present invention, as shown in the vacuum pump configuration 5, under the ultra-high vacuum condition, the pressure corresponding to the residual gas partial pressure PR is drawn to a maximum pressure of ltT8mbar, and each component 21 is in a batch mode At the same time, it is fixed on the batch carrier 3a for CVD processing. Each member 21 has a circular plate shape. As shown in Fig. 1, the process gas or its mixture G is transferred from the gas tank arrangement 7 to the reactor 1b and each component 21 is heated to the desired process temperature by the heating arrangement 9. Each of the disc-shaped members 21 in the present invention is shown in the batch method shown in Figure 2-15-578215. 5. Description of the invention (14) is positioned horizontally and stacked vertically in the batch during the UHV-CVD process. On carrier 3a. Fig. 3 relates to the vacuum processing equipment of the present invention or the manufacturing method of the present invention, which combines the first and second appearances of the present invention. The UHV-CVD reactor 1 b is formed as shown in FIG. 2, and the disc-shaped individual members 2 1 which arrive in order through the vacuum conveying chamber 1 3 a are inserted into the reactor 1 b. 21 is stacked on the batch carrier 3a in the manner described above. It is not necessary to perform awkward and complicated processing on the entire component batch in the transfer room 1 a. In one or more processing chambers 17a (shown as dashed lines), each component 21 (also positioned horizontally) is processed and then individually conveyed to the UHV-CVD reactor via the transfer chamber 1 3a, where Each component is aligned horizontally on the carrier 3a, forming a stack vertically while being processed. Therefore, the components can be stacked in batches in one or all of the processing chambers 17a, but the components can also be individually transferred to the reactor 1b and / or to the processing chamber 17a. Fig. 4 shows a partial longitudinal sectional view of a preferred embodiment of the UHV-CVD reactor of the present invention, which can be used for carrying out the method of the present invention or as part of the vacuum processing equipment of the present invention. The UHV-CVD reactor of the present invention includes a reactor-container 41 (preferably composed of stainless steel). The container 41 must be cooled strongly, and its wall surface 41a is thermally tightly coupled to the cooling mechanism at least in sections. Preferably, as shown in Fig. 4, the wall surface 4a is formed at least in sections with double walls, with a cooling intermediate region 43 in between. A coolant-duct system (not shown) is integrated in the cooling intermediate zone. -16- 578215 V. Description of Invention (16). However, this isolation must be sufficiently tight so that gas will hardly diffuse from the reaction chamber R into the remainder of the reactor interior I during operation. In the CVD process, the total pressure in the rest of the reactor interior I is preferably selected to be smaller than the total pressure in the reaction chamber R. Inside the reaction chamber R is mounted a component carrier 57 which, in the embodiment shown in Fig. 4, can accommodate disc-shaped members made of wafers, which are positioned horizontally and stacked vertically. This is indicated by the double arrow W. The carrier 57 is vertically driven to move up and down. As shown in Figure 3, it is possible to individually receive disc-shaped members 21 in a batch manner or to deliver these members through the loading / unloading port (similar to the opening 1 la in Figure 3). To reach. According to the embodiment shown in FIG. 4, the loading / unloading port passes through the wall surface 48a of the reaction container 48 and the wall surface of the reaction container 41 so as to alternately approach the parts of the reactor to the reaction chamber R. The reaction container 48 is divided into an upper portion 48 in Fig. 4. And lower 48u. The carrier 57 is fixed to the upper part 4 8. . The upper part 4 8 of the reaction container 4 8 is raised by means of a lifting mechanism 5 9. As a result, the carrier 57 also rises. A loading / unloading port 63 which can be closed by a slit valve 61 is provided in the wall surface 41a, which has a symmetry plane E which is at least almost formed with the container 48 in a closed state. The dividing line 65 (aligned between the upper part 48 of the reaction container 48 and the lower part 48u) is aligned. The loading and unloading of the reactor is performed in the following manner: The upper portion 48 of the reaction vessel 48. Ascending by the ascending mechanism 59, the carrier 57 also rises. With controlled stepping drive, the carrier 5 7 is about to be unloaded or loaded -1 8- 578215 V. Description of the invention (17) The component interface 56 is positioned at the height of the loading one / unloading port 63. Through the opening 63, as shown by the disc-shaped member 65 in FIG. 4, the carrier 57 or its receiving opening 56 can be sequentially loaded or unloaded by the conveying mechanism on the opening 63. If the components (especially the wafer) to be processed are completely loaded on the carrier 57 ', the upper portion 48. And the carrier 57 is lowered and the reaction container 48 is closed. Of course, two openings 63 may be provided to perform the loading and unloading functions b, respectively. During loading or unloading, the reaction chamber R is maintained at the required program temperature. The heating arrangement 67 is installed in the remaining space 1 (which surrounds the reaction vessel 48), SP, and is installed in a vacuum. The heating arrangement 67 is constituted by a multi-zone radiant heater. In addition, in order to improve the temperature uniformity, a heat sink 6 9 (which is made of, for example, graphite) must be provided between the heating arrangement 67 and the reaction container 4 8 R. If the heat sink 69 is not provided as a single component, the scattering function can also be combined with the wall surface 48a of the reaction container 48. The method is to use a heat dissipating material (more It is preferably graphite) coated. The wall surface 48a can also be used as a diffuser. At this time, the wall surface 48a is made of a heat-dissipating material (preferably graphite) and the inner surface is coated with Si or SiC. It is used as the boundary of the reaction chamber R directly and for the heated The program gas is passive. As shown in FIG. 4, it is preferable to additionally install a thermal isolator 71 between the heating arrangement 67 and the inner surface of the wall surface 41a, which is made of, for example, a porous graphite material. If the reaction container 48 is closed, the layer deposition process can be started on each member fixed on the carrier 57. The program is made via a gas introduction system 73 -19- 578215 V. Description of the invention (18) The gas or its mixture G is transferred from the gas tank arrangement 52 to the reaction chamber R. The desired layer deposition is performed when the temperature of the components has been properly adjusted and the temperature has been properly distributed, which is performed according to the introduced program gas and time, and each component is subjected to a separate gas. As described above, 'quality is important when semiconductor components are deposited by UHV-CVD, and each component has the same-and evenly-distributed process temperature during the CVD process. As shown in Figure 4, a heating arrangement 67 is placed in a vacuum. Referring now to FIG. 5, a plurality of heat radiators 67a, b, c, ... are distributed along the wall surface 48a. A plurality of heat detectors 75a, 75b, and the like are installed inside the reaction chamber R. The output signal of the thermal detector is preferably digitized and transmitted to the calculation unit 77. In this unit 77, the temperature distribution θ (χ, y) in the reaction chamber R is calculated from the output signals of the thermal detectors 75a, b, and c. ) And average temperature of 5 level. The calculation unit 77 further introduces a rated temperature distribution W from a preset unit 68 shown in FIG. 5 to a presettable level. The distribution W must be compared with the actual temperature in the calculation unit 77. The digitally operated adjustment unit 79 is also integrated in the calculation unit 77. The calculation unit 77 sends an adjustment signal Sa, b, c, ... to each heating element 6 7 a, b 'c' ... at the output side so that The heating elements 67a, b, c, ... used as adjusting elements are different according to time. The settings are such that the temperature distribution in the reaction chamber R, y) and its temperature level 3 are adjusted to a predetermined rated distribution and a predetermined Rated level. In addition to the heat detectors 75a, b, and c, which are arranged on the wall 48a of the reaction container 48 in the reaction chamber R in FIG. 5, they are also directly

-20- 578215 V. Description of the invention (19) A special heat detector is set on the required position (ie, the area of each component) or on the wafer surface, but multiple heating elements can also be set. Fig. 6 shows the enlarged carrier 57 of Fig. 4 on which a plurality of components—or wafers—receiving ports 77a, 77b are mounted. (On each receiving port 77a, 7 7b,..., For example, a disc-shaped member 21 to be treated is placed on the protruding support 79. A plurality of heating elements 8 are distributed on the surfaces of the receiving ports 77 a, 77 b near the member 21. 1 a, b, which are thermally tightly coupled to the surface of the component. Also, heat detectors 83 can also be directly distributed in the area of each component 21. With the heat detector on each component 21 83 to measure the temperature distribution, on the other hand, the temperature distribution and its absolute level can be adjusted by a plurality of heating elements 8 1 a, b, c, ... and / or the heating configuration of Fig. 4 67 Multi-area-radiant heater. The measurement signal duct and the adjustment signal duct of the heat detector 83 or the heating element 81 are formed by the vertical arm 57a of the carrier 57. Then, a kind of reactor (as shown in FIG. 4) is described. (Shown) UHV-CVD process. In particular, it describes the growth of a p-doped SiGe layer (for example, one in a heterodielectric transistor), where this method can be easily used to deposit other layers. ♦ Reaction chamber R is heated to the required program temperature Tp, and is heated to 5 50 when the SiGe layer is deposited C. ♦ A flushing gas (for example, hydrogen) is introduced into the reaction chamber R. The gas comes from the gas inlet 73 of the gas storage tank of the tank configuration 52, and the tank configuration 52 also has a flushing gas storage area, a loading port 63. When the valve 61 is opened with respect to the vacuum transfer chamber 13a, it is opened.

-21-578215 5. In the description of the invention (20), the driving arrangement 59 is used to make the upper part 48 in the fourth figure. And the carrier 57 is improved. • With the flushing air flow maintained, each component (especially the wafer in Figure 4) is loaded into a carrier 57, where the carrier 57 (and the upper portion 480 uses a drive configuration 5 9-step by step to make the Figure 6 The empty receiving port 77 is aligned with the loading port 63 and brought into the manned robot. * After the carrier 5 7 is unloaded, the loading port 6 3 is closed with a valve 61 and the reaction chamber R is also borrowed. It is lowered from the upper part 48, and at the same time, the carrier 57 is also lowered to the processing position (as shown in Fig. 4) and is closed. Increased gas, preferably hydrogen and / or silane to make the above-mentioned SiGe layer. • As long as the heat-conducting gas is not a process gas, it must stop flowing, and now make the process gas or its mixture via the introduction configuration of the gas tank configuration 52 G is introduced into the closed reaction chamber R. The first layer is deposited on the surface of the component or the surface of the wafer. In the manufacture of each component mainly composed of each component or wafer (which has a p-doped silicon-germanium layer) Silane is introduced as a program gas at times. * One layer has been completed, as long as there are no other layers to be deposited, the wafer or component can be taken out of the reaction chamber R. • The flushing gas flow, preferably hydrogen, is reintroduced and opened by the valve 61 and the upper portion 48. Free access to the _feed robot set in the vacuum transfer chamber 1 3 a. Then the carrier 5 7 is raised or lowered step by step, so that the processed wafer can be aligned when approaching

-22- 578215 V. Description of the invention (21) The loading / unloading port 63 should be allowed. * But if other layers still need to be applied, after depositing the first layer, it must continue as if depositing the above-mentioned P-doped SiGe layer. • As described above, after the Si layer is deposited, an undoped SiGe layer is deposited. At this time, germanium and helium are added to the silane, and the silane preferably accounts for 5%. • Diborane is then introduced into the He (gas) stream and a doped SiGe layer is deposited. In this step, another kind of carbon mismatch is performed simultaneously with the boron-doping. * An undoped SiGe layer is deposited with only silane and germanium introduced into ammonia. * Deposition of an undoped Si layer with only silane introduced. ♦ The carrier 57 is then unloaded, as described above. The combined first and second appearances shown in Figure 3 of the present invention are extremely advantageous, in which the UHV-CVD reactor can be combined with other program modules via one or more vacuum transfer chambers, and each component Each vacuum condition will not be interrupted when transferring between the program module and one or more UHV-CVD reactors. In addition to the UHV-CVD reactor described above, the following modules can also be used as program modules:-Other conveying modules-gate modules, a heating module, -PVD- or CVD-coating method or pEcVD (Plasma Enhanced CVD) method for other coating modules, ~ touch program module, which is a plasma promoter or non-plasma promoter,

-23- V. Description of the Invention (22) A purification module, a storage module, and an implanted module. These multi-program stations and equipment can be constructed in a linear manner, that is, at least a large part of the conveyance of each component is performed in a linear manner between the respective program stations, but at least some of the program stations are grouped in a circle. The shape is arranged around the vacuum conveying chamber to form a circular device. These devices (where multiple program stations are operated in a vacuum via linear and / or circular conveyor paths) are commonly referred to as "Cluster Tool-Equipment". Fig. 7 is a Cluster Tool-Equipment according to the present invention, which is formed into a circular device according to the principle of Fig. 3; This device contains a small-box loading module 93 on the normal atmospheric side, commonly known as FOUP (Front Opening Unified Pod Module). The small cassette loading module 93 is used to accommodate at least one wafer cassette or component cassette 93a. During wafer processing, it can accommodate 25 vertically stacked horizontally positioned wafers. With another wafer handle 95 operating in a normal atmosphere, individual wafers can be transferred from the cassette 93a to the first lock chamber 97. After the lock chamber 97 is evacuated, each wafer is transferred to the purification module 99 again. This is achieved by the vacuum transfer chamber 101 and the wafer handle 101a which operates in a vacuum. In the purification module 99, high-temperature purification or other gas-phase purification or a purification using a low-energy plasma is performed in a hydrogen atmosphere (which will be described below). Depending on the chosen purification method, it is of course advantageous to arrange a plurality of purification modules in sequence and to perform separate purification steps on these modules. Preferably, a storage chamber 103 and a second purification module 99a are separately provided. The wafer is therefore -24-578215 V. Description of the invention (23) The gate chamber 97 can be simultaneously cleaned by entering the two purification modules 99 and 99a, and then cleaned by the handle 10a operated in a vacuum. In the storage compartment of the chamber 103. The number of wafers that can be contained in the UHV-CVD reactor 105 by the carrier is already located in the storage chamber 103. These two chambers 97 and 103 are constituted by cassette holders and become gate chambers. After the required number of cleaned wafers are placed in the storage chamber 103, the individual wafers are transported to the shown in Fig. 4 in a short period of time by the handle 10a which operates in a vacuum. After the CVD process is completed in the carrier 57 of the UHV-CVD reactor 105, the wafer is returned by the carrier 57 of the UHV-CVD reactor 105 to one of the two gate chambers 97 or 103, that is, placed in its cassette. In the middle and later, the corresponding lock chamber 97 or 103 is transported to the box of the small box loading module 93. Use the principles of Figures 1 to 3 above and the preferred UHV-CVD reactor in Figure 4 to transport each wafer, clean the wafer and perform UHV-CVD processing in batch configuration. The wafer is larger than 200mmx200mm Or its diameter 0 is greater than 200m, at least 300mmx300mm or diameter 0 is greater than 300mm. In addition to the batch configuration in the UHV-CVD process, in particular, individual wafers can be transported and other processes can be performed if necessary. Then describe the control sequence of the circular Cluster-Tool-Equipment in Figure 7. Wafers with a diameter of at least 200mm (or a size of 200mmx200mm) or a diameter of at least 3,000mm (or a size of 300mmx3 00mm) are loaded into -25-578215 V. Description of the invention (24) 7 The small box on the atmospheric side of the figure The input module 93 may include, for example, 25 wafers. The wafers are then conveyed from the cassette loading module 93 to the cassettes in the lock chamber 97 or 103 by the wafer handle 95. The individual wafers are loaded into the purification modules 99 and 99a by the cassette 97 in the lock chamber 97 or 103 through the handle 101a operated in the vacuum transfer chamber 101, and each wafer is cleaned there. The purification time is 1 to 10 minutes. The cleaned wafers are loaded into the unused gate chamber 103 or 97 by the purification modules 99 and 99a. The gate chamber 97 or 103 is now used as a temporary storage chamber. This step is achieved by the handle 1 0 1 a operated in the vacuum chamber 101. The time required to clean up 25 wafers and complete the transfer is 65 minutes. The purified 25 wafers in the cassette of the gate chamber 103 are now loaded into the UHV-CVD reactor 105 by the handle 101a. The purified 25 wafers are loaded into the carrier 57 from the temporary storage chamber 103 for batch processing in the UHV-CVD reactor 105 in 5 minutes. Now the coating process is started in the UHV-CVD reactor. The typical processing time for a p-doped SiGe layer system is 2 to 3 hours. During this period, new cassettes loaded with unprocessed wafers are introduced into the cassette loading module 93 and these wafers are purified in the purification modules 99 and 99a in the manner described above and temporarily stored in the cassettes of the gate chamber. After the UHV-CVD process is completed, the processed wafers are individually unloaded from the carrier 57 by the wafer handle 10a and stored in an empty box 97 or 103. From there, the handle 95a operated in the atmosphere is returned to the empty cassette in the cassette loading module 93.

-26- 578215 V. Description of the invention (25) According to the time ratio of each process under consideration, two or more UHV-CVD processes can be combined with each other on the Cluster (serial) device, so The other program modules can be formed into different combinations. In particular, the UHV-CVD process or reactor can be combined with a CVD coating method promoted by a low-energy plasma, or a reactive purification method promoted by a low-energy plasma. It is better to use a DC plasma, and it is better to generate a low-voltage plasma by a thermionic cathode. The ion energy E formed on the surface to be coated or to be purified is: 0 < E $ 1 5 eV. Hydrogen and / or nitrogen can be used as the reaction gas for the above-mentioned low-energy plasma-promoted purification method. For the equipment in Figure 7, the purification process or the corresponding program station can be used directly before the UHV-C VD process. Low-energy plasma promotes reactive purification process. Using the method of the present invention, vacuum processing equipment or UHV-CVD reactors can be made into special components by depositing atomic layers, or by depositing epitaxial layers or deep contoured surfaces (for example, so-called deep The surface of the ditch) is coated to make special components. Explanation of reference symbols 1 ..... CVD reactors 3,3a, 57 ..... carriers 4,21 ..... components 5 ..... vacuum pump configuration 7 ..... gas tank configuration 9 ..... Heating configuration -27- 578215 V. Description of the invention (26) 13, 13a ..... Vacuum delivery chamber 15 ..... Vacuum pump configuration 17,17a ..... Processing chamber 4 1 ..... Reactor-containers 41a, 48a ... Walls 43 ... Cooling middle zone 45 °, 45u ... Flange 47 °, 47u ... Coolant duct System 48 ..... Reaction vessel 49, 51 ..... Pump end 5 5 ..... Valve 59 ..... Lifting mechanism 61 ..... Slit valve 63 ..... Loading— / Unloading port 6 5 ..... Dividing line 67 ..... Heating configuration 69 ..... Diffuser 7 1 ..... Isolator 73 .... Gas introduction system -28-

Claims (1)

____ Gas > year \ ^ 士 日 改 " ~ -------- VI. Patent Application No. 91 123 272 "Method for Manufacturing Components or Intermediate Products, Vacuum Processing Equipment and Ultra High Vacuum CVD "Reactor" patent case (Amended in February 1992) Six patent application scope: 1. A method of manufacturing a component or its intermediate product, the component (a) in the process is subjected to a processing process and (b) multiple subsequent At the same time, the components are subjected to a common CVD process under ultra-high vacuum conditions, which is characterized in that the processing process is a vacuum process and each component is subjected to the CVD process in a vacuum. 2. The manufacturing method according to item 1 of the scope of patent application, wherein each member is in the shape of a circular plate and is subjected to the CVD process in a horizontal manner under ultra-high vacuum conditions. 3. The manufacturing method according to item 1 of the scope of patent application, wherein each member is in the shape of a circular plate and is subjected to the processing process and the CVD process in a horizontal manner, and is also transferred horizontally from the processing process to the CVD process. 4. The manufacturing method according to any one of claims 1 to 3, wherein each component is kept in a vacuum between a purification process before a CVD process and a CVD process. 5. The manufacturing method according to any one of claims 1 to 3, wherein each member is in the shape of a circular plate and is positioned horizontally, vertically stacked up and down while being subjected to the CVD process. 6. The manufacturing method according to item 5 of the scope of patent application, in which each component is conveyed separately during CVD process to form a stack and / or to be de-stacked during the CVD process. 7. The manufacturing method according to any one of claims 1 to 3, in which each component is subjected to two or more kinds of processing, and the CVD process is one of them, and each component is sequentially processed by one of them in the air. The processing is transferred to another name, which is carried out at least in the form of a file along a conveying rail in the form of a straight line and / or a circular section. 8. If the method of manufacturing a patent application is applied to any of the three items in the first stage, the components are subjected to a reactive low-energy plasma-promoted processing process before and / or after the CVD process. The ion energy E on the surface of the component is OeV < ES 15eV. 9 · If the manufacturing method of the scope of patent application No. 8 :: Each component in Η: is processed by a low-energy plasma to promote reactive purification before processing in the CVD process, preferably in an atmosphere containing hydrogen and / or nitrogen Perform 〇10. The manufacturing method according to any one of claims 1 to 3, wherein in the reaction chamber loading and / or unloading of the components to be processed under UHV conditions in the CVD process, in the reaction chamber A gas flow is maintained, preferably a gas flow containing hydrogen. 1L The manufacturing method according to any one of claims 1 to 3 in the scope of patent application, wherein the average temperature and temperature distribution in the reaction chamber of the CVD process are measured and controlled (preferably adjusted). For example, the manufacturing method of any of items 1 to 3 of the scope of patent application, 578215, scope of patent application Among them, the average temperature and temperature distribution of each component are measured and controlled (preferably adjusted) during the CVD process. 13. The manufacturing method according to any one of claims 1 to 3, wherein the reaction chamber (where the CVD process is performed) is heated by a heating element, and each heating element is installed in a vacuum surrounding the reaction chamber. Inside the container. 14. The manufacturing method according to any one of claims 1 to 3, wherein the reaction chamber used in the CVD process is first evacuated to ultra-high vacuum, and then the process gas or mixture thereof is introduced into the reactor. The pressure is increased to the program pressure, the reaction chamber is surrounded by a vacuum, and the total pressure is in the range of the program pressure, preferably smaller than the program pressure. 15. For the manufacturing method of item 13 in the scope of patent application, the vacuum of the reaction chamber and its surroundings are pumped separately. 16. For the manufacturing method of item 14 in the scope of patent application, the reaction chamber and The surrounding vacuum is pumped separately. 17. The manufacturing method according to item 13 of the scope of patent application, wherein the vacuum of the reaction chamber and its surroundings is set in a container outside the ambient atmosphere, and the reaction chamber is loaded with the container through the vacuum of its surroundings. Communicate to load and / or unload components. 18. The manufacturing method according to item 14 of the scope of patent application, wherein the reaction chamber and the surrounding vacuum are set in a container located outside the ambient atmosphere. The reaction chamber is unloaded from the container by the surrounding vacuum. 578215 VI. Scope of patent application The ports are connected to load and / or unload each component. 19. The manufacturing method according to any one of claims 1 to 3, wherein after each component is introduced into a reaction chamber for a CVD process, a gas (preferably containing hydrogen and / or a process gas or process is introduced). When the mixture of gases) enters the process chamber, each component reaches its thermal equilibrium state. 20. —A method for manufacturing a component or an intermediate product thereof. Components in the manufacturing process are simultaneously subjected to a common CVD process under the condition of ultra-high vacuum and each component is heated by a heating element, which is characterized in that each heating element is under vacuum Operation. 21. The manufacturing method according to claim 20, wherein each member used in the CVD process is held on a carrier, and each heating element is provided on the carrier corresponding to each member. 22. The manufacturing method according to claim 20 or 21, wherein each component is held on a carrier during the CVD process, and a heat detector is preferably provided on the carrier corresponding to each component. 23 · —A vacuum processing equipment comprising an ultra-high vacuum CVD reactor provided with a carrier for each component to be processed in the reactor at the same time. The reactor has at least one loading / unloading port, which is characterized by For: At least one loading-unloading port is in communication with the vacuum conveying chamber for each component. 24. A type of ultra-high vacuum (UHV-) _ CVD-reactor, which has a carrier for each disc-shaped member to be processed in the reactor at the same time, and its characteristics are 578215. The used carriers are positioned in a horizontal position and overlap vertically to form a stack. 25. The vacuum processing equipment according to claim 23 of the scope of patent application, which is used for processing disc-shaped components, wherein the carrier for accommodating each component in the reactor is positioned in a horizontal position and overlaps vertically to form a stack. 26. The vacuum processing equipment according to claim 23 or 25, wherein the vacuum conveying chamber has a conveying configuration for conveying each component or a plurality of components, and the disc-shaped component is positioned in a horizontal position. 27. If the vacuum processing equipment in the scope of the patent application No. 23 or 25, the vacuum transfer chamber is connected with one or more other vacuum processing chambers, these vacuum processing chambers are composed of the following groups: the gate chamber, Coating room, purification room, etching room, UHV-CVD processing room, air-conditioning room (for example, heating room), temporary storage room, implantation room. 28. The vacuum processing equipment according to item 27 of the patent application, wherein a vacuum conveying chamber is provided with a conveying arrangement which rotates around a rotation axis. 29. The vacuum processing equipment according to item 27 of the patent application, wherein a vacuum conveying chamber is provided with a conveying configuration having at least one portion that moves in a linear manner. 30. The vacuum processing equipment according to claim 23 or 25, wherein the reaction vessel surrounds a reaction chamber and a reactor vessel (which is separated from the reaction vessel at least in sections) surrounds the reaction vessel, 578215 six The scope of the patent application includes a reactor vessel and a reaction vessel each having a pump end. 31. The UHV-CVD-reactor of claim 24, wherein the reaction vessel surrounds a reaction chamber and a reactor vessel (which is separated from the reaction vessel at least in sections) surrounds the reaction vessel 'where The reactor vessel and the reaction vessel each have a pump end. 32 For example, the vacuum processing equipment of the 30th scope of the patent application, wherein the pump cross section of the pump end on the reaction vessel is much larger than the pump end on the reactor vessel, and the two pump ends are on the same pump configuration. Extending 33 The UHV-CVD-reactor as described in the scope of patent application No. 31, wherein the pump cross section of the pump end on the reaction vessel is much larger than the pump end on the reactor vessel, and the two pump ends are the same The pump configuration is extended. 34. The vacuum processing equipment of claim 30, wherein the reactor vessel is functionally combined with a cooling configuration. 35 The UHV-CVD-reactor of claim 31, wherein the reactor vessel is functionally combined with a cooling arrangement. 36. The vacuum processing equipment according to item 34 of the patent application, wherein the wall surface of the reactor vessel is composed of double walls at least in sections and the cooling arrangement is installed in the middle space of the double walls. 37. The UHV-CVD-reactor according to item 35 of the patent application, wherein the wall of the reactor vessel is composed of double walls at least in sections and the cooling arrangement is installed in the middle space of the double walls. 578215 VI. Application for patent scope 38. For example, the vacuum treatment equipment of scope 30 of the patent application scope, wherein the reactor vessel has at least one for loading / unloading of each component □ and the reaction vessel is divided into two which can be mutually used to The part of the container moved by the motor can be combined into the container by the motor or can be separated to open the container. The dividing line of the two parts is aligned with the loading- / unloading port in the combined state. 39. UHV-CVD-reactor 5 according to item 31 of the scope of the patent application, wherein the reactor vessel has at least one for loading and unloading of each component, and the reaction vessel is divided into two which can be moved by motors to each other The container part can be assembled into the container by a motor or can be separated to open the container. The dividing line of the two parts is aligned with the loading / unloading port in the combined state. 40. The vacuum processing equipment of claim 38, wherein the loading-unloading port is aligned horizontally and the dividing line of the two parts passes through the main section of its length (which is close to the Load--/ unload port) and also extend horizontally. 41. The UHV-CVD-reactor according to item 39 of the patent application, wherein the loading / unloading port is aligned horizontally and the dividing line of the two parts passes through the main section of its length in the combined state (It is near the loading--/ unloading port) and also extends horizontally. 42. The vacuum processing equipment according to item 40 of the application, wherein a carrier for a plurality of disc-shaped members is fixed on one of the two parts of the reaction container, and has a plurality of receiving ports, at least one Disc shape 6. The scope of the patent application component is aligned in the horizontal direction and stacked in the relative movement direction of each part of the reaction container, so that one of the receiving ports is aligned with the loading by controlling the relative movement of each part -/ Unloading port 43. The UHV-CVD-reactor according to item 41 of the patent application scope, wherein a carrier for a plurality of disc-shaped members is fixed on one of the two parts of the reaction vessel, which has A plurality of receiving ports, at least one disc-shaped member is aligned in the horizontal direction and stacked in the relative moving direction of each part of the reaction container, so that one of the receiving ports is respectively aligned by controlling the relative movement of each part The loading-unloading port 44 may be a vacuum processing equipment such as the 38th in the scope of patent application, in which each part can be separated or combined by linear relative movement. 45 The UHV-CVD-reactor according to item 39 of the patent application, wherein each part can be separated or combined by linear relative movement. 46. The vacuum processing equipment of claim 38, wherein one of the two separable parts of the reaction vessel is immovably mounted on the reactor vessel. 47. The UHV-CVD-reactor of claim 39, wherein one of the two separable parts of the reaction vessel is immovably mounted on the reactor vessel. 48 The vacuum processing equipment according to item 30 of the scope of patent application, in which a gas supply configuration is connected to the reaction vessel so as to be configured by a gas tank 578215 6. The scope of the patent application provides a process gas, at least the inner surface of the reaction vessel wall is Material construction, which is resistant to the introduced process gas and is preferably graphite at a predetermined process temperature. 49. For the UHV-CVD-reactor of the 31st scope of the patent application, wherein a gas supply configuration is connected to the reaction container so as to supply a process gas from the gas tank configuration, at least the inner surface of the reaction container wall is composed of a material, This material is resistant to the introduced process gas at a predetermined process temperature and is preferably graphite. 5Q The vacuum processing equipment according to item 30 of the patent application scope, wherein there is a heating arrangement between the reaction vessel and the reactor vessel. For example, the UHV-CVD-reactor of the 31st scope of the patent application, wherein there is a heating arrangement between the reaction vessel and the reactor vessel. 52. The vacuum processing equipment according to claim 50, wherein there is a heat diffuser configuration between the heating configuration and the internal space of the reaction vessel. 53. The UHV-CVD-reactor of claim 51, wherein a heat diffuser configuration exists between the heating configuration and the internal space of the reaction vessel. 54. The vacuum processing apparatus of claim 30, wherein a carrier for a plurality of components is present in the reaction container and at least one (preferably a plurality of) heat detectors are mounted on the carrier. 55. The UHV-CVD-reactor according to item 31 of the scope of patent application, wherein a carrier for a plurality of components is present in the reaction vessel and at least one (preferably multiple) heat is installed on the carrier. detector. 56. For example, the vacuum processing equipment of the scope of application for patent No. 54, at least one of the heat detectors is an actual 値 receiver of a temperature adjustment circuit and a heating arrangement is provided on at least a part of the carrier as a reaction container and a reactor container Between the adjustment element and / or the adjustment element inside the reaction vessel. 57. If the UHV-CVD-reactor of the scope of application for patent No. 55, at least one of the heat detectors is an actual 値 receiver of a temperature adjustment circuit and a heating arrangement is provided on at least a part of the carrier as a reaction container and Adjustment elements between reactor vessels and / or adjustment elements inside reaction vessels. 58. A UHV-CVD-reactor comprising a carrier for a plurality of components, characterized in that at least one thermal detector is present on the carrier. 59. The UHV-CVD-reactor according to item 58 of the patent application, wherein at least one heating element is provided on the carrier. 60. For the UHV-CVD-reactor of item 59 in the scope of patent application, at least one of the heat detectors is an actual plutonium receiver of a temperature-regulating circuit for the carrier. 61. For example, the UHV-CVD-reactor of the 57th aspect of the patent application, wherein the carrier has a plurality of receiving ports for each component, and at least one heat detector is installed in one of the receiving ports to make the thermal detection The device is thermally tightly coupled to the components contained on it. -10- 578215 6. Application scope of patent 62. For example, UHV-CVD-reactor with the scope of patent application No. 58, 59 or 60, wherein the carrier has multiple receiving ports for one component and at least one thermal detection The detector is installed at one of the receiving ports, so that the heat detector is thermally tightly coupled to the component accommodated thereon. 63. For example, the manufacturing method of the scope of patent application No. 1, 2, 3, 20 or 21, wherein the atomic layer deposition is performed by CVD process (1011 ^ 〇: 1 ^ 761-Deposition) 0 64 , 2, 3, 20 or 21, wherein a deep trench layer deposition is performed by a CVD process. 65. The manufacturing method according to claim 1, 2, 3, 20 or 21, wherein an epitaxial layer deposition is performed by a CVD process. -11-