WO2016029700A1 - 一种通过真空装载腔为晶圆预热的装置及方法 - Google Patents

一种通过真空装载腔为晶圆预热的装置及方法 Download PDF

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Publication number
WO2016029700A1
WO2016029700A1 PCT/CN2015/076737 CN2015076737W WO2016029700A1 WO 2016029700 A1 WO2016029700 A1 WO 2016029700A1 CN 2015076737 W CN2015076737 W CN 2015076737W WO 2016029700 A1 WO2016029700 A1 WO 2016029700A1
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Prior art keywords
chamber
wafer
preheating
heating
robot
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PCT/CN2015/076737
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English (en)
French (fr)
Inventor
吴凤丽
姜崴
陈英男
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沈阳拓荆科技有限公司
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Publication of WO2016029700A1 publication Critical patent/WO2016029700A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

Definitions

  • the invention relates to a device and a method for preheating a wafer through a vacuum loading chamber, which can be mounted at different positions on the device according to different process requirements to reach the wafer
  • the requirements of heating, preheating or heat preservation belong to the field of semiconductor thin film deposition application and manufacturing technology.
  • a semiconductor coating device When a semiconductor coating device performs a deposition reaction, it is necessary to bring the wafer to a certain temperature to deposit a film of satisfactory quality.
  • Most of the existing semiconductor coating equipment allows the wafer to enter the reaction chamber for a certain period of time, and at the time of residence, the wafer is brought to the temperature required for the deposition reaction by means of heating means or plasma bombardment.
  • the residence time of the residence is short, the wafer does not completely reach the temperature required for the reaction, which will affect the film formation quality; if the residence time is too long, the production efficiency is lowered, the production capacity is increased, and the cost is increased.
  • the present invention has been made to solve the above problems, and mainly solves problems such as poor film formation quality or reduced productivity due to failure of the heating time and heating temperature in the conventional wafer heating method and heating structure.
  • the present invention preheats the wafer before the deposition reaction by adding a heatable vacuum loading chamber.
  • the wafer temperature meets the requirements, the wafer is sent to the reaction chamber for deposition reaction to increase Efficiency, increase productivity . It can be mounted in different locations according to different process requirements to achieve other special requirements for wafer preheating, heating or insulation.
  • a device for preheating a wafer through a vacuum loading chamber which is mounted on both sides of the device transfer cavity (or can be mounted on other positions of the device according to other process requirements) to mount a plurality of preheating chambers Or a single preheating chamber, the above multiple preheating chambers or single preheating chambers can be mounted according to different process requirements.
  • the plurality of preheating chambers or the single preheating chambers are mounted on both sides of the transfer chamber as a place for preheating and stacking during wafer transfer.
  • the method is that during the process, the wafer enters the film cavity from the front end module of the device, and is sent to the plurality of preheating chambers or the single preheating chamber by the robot in the film cavity, and preheated therein or Heating, when the temperature reaches the requirement, it is sent to the reaction chamber by the robot of the transfer chamber for deposition reaction. After the deposition reaction, the wafer can also be transferred to the preheating chamber for heat preservation according to the process requirements.
  • the modular design concept is used to mount preheating chambers of different structures at different locations according to different process flows to achieve functions such as preheating, heating or heat preservation of the wafer. It can meet the temperature required for the deposition reaction and is beneficial to increase the production capacity.
  • Figure 1 is a schematic view of the mounting position of the present invention.
  • FIG. 2 is a top cross-sectional view of a single piece preheating chamber.
  • Figure 3 is a front cross-sectional view of a single piece preheating chamber.
  • Figure 4 is a front cross-sectional view of a plurality of preheating chambers.
  • the part numbers in the figure represent: 1. Equipment front-end module; 2. Transmitting cavity; 3. Multi-chip preheating chamber; 4. Reaction chamber; 5. Single-chip preheating chamber; 6. Heating plate; 7. Thimble; 8. Preheating chamber; , transfer port; 10, preheating chamber cover A; 11, thimble support plate; 12, lifting mechanism A; 13, rack; 14, upper preheating chamber; 15, heating tube; 16, wafer holder; 17, lower film chamber; 18, preheating chamber cover B; 19, lifting Agency B.
  • a device for preheating a wafer through a vacuum loading chamber wherein the single preheating chamber 5 in the device comprises a heating plate 6 , a thimble 7 , a preheating chamber 8 ,
  • the preheating chamber cover A10, the ejector support plate 11, the lifting mechanism A12 and the frame 13 are composed.
  • the preheating chamber 8 and the preheating chamber cover A10 form a separate chamber space, and the heating plate 6 is installed inside the preheating chamber 8 to realize the heating function, and the mounting frame 13 is installed under the preheating chamber 8.
  • the lifting pin A11 is mounted above the lifting mechanism A12, and the ejector pin 7 is placed on the ejector supporting plate 11 for realizing the feeding and feeding operation.
  • the wafer enters the transfer chamber 2 by the front end module 1 of the device, and the robot handles the wafer from the transfer chamber 2 to be transferred from the transfer port 9 into the single preheating chamber 5, and the lifting mechanism A12 pushes the ejector support 11 to the ejector pin 7.
  • the top of the ejector pin 7 lifts the wafer from the robot.
  • the lifting mechanism A12 drives the ejector pin 11 to descend, and the thimble 7 is dropped to cause the wafer to fall into the heating plate 6 for heating.
  • the heating plate 6 has heating wires or other heating means inside to enable the wafer to be heated uniformly and rapidly.
  • the lifting mechanism A12 pushes the thimble support plate 11 to raise the ejector pin 7, the top of the ejector pin 7 lifts the wafer from the heating plate 6, the robot of the film transfer chamber 2 enters, and the lifting mechanism A12 with the ejector pin support plate
  • the 11 is lowered, the ejector pin 7 is dropped, the wafer is dropped into the robot, and the wafer is taken out by the robot by the transfer port 9.
  • the removed wafer is fed into the reaction chamber 4 by the robot of the transfer chamber 2 for deposition reaction. After completion of the reaction, the deposited wafer in the reaction chamber 4 is taken out by the robot of the transfer chamber 2, and returned to the device front end module 1 via the transfer chamber 2.
  • the plurality of preheating chambers 3 are composed of an upper preheating chamber 14, a heating tube 15, a wafer holder 16, a lower transfer chamber 17, a preheating chamber cover B18, and a lifting mechanism B19. .
  • the upper preheating chamber 14, the lower transfer chamber 17, and the preheating chamber cover B18 form a separate chamber space.
  • a heating device such as a heating tube 15 or a heating lamp is uniformly disposed in the upper preheating chamber 14 to realize a heating function, and a lifting mechanism B19 is mounted under the lower film chamber 17, and a wafer holder 16 is mounted above the lifting mechanism B19.
  • the upper preheating chamber 14 and the lower transfer chamber 17 are bolted to form a completed preheating chamber.
  • the wafer enters the wafer chamber 2 by the front end module 1 of the apparatus, the robot 2 transfers the wafer into the plurality of preheating chambers 3, and the lifting mechanism B19 pushes the wafer holder 16 located in the lower transfer chamber 17 so that The layer is raised layer by layer so that the robot can freely place the wafer between different layers of the wafer holder for loading.
  • the lifting mechanism B19 pushes the wafer holder 16 into the upper preheating chamber 14, and a heating device such as a heating tube 15 or a heating lamp is uniformly disposed in the upper preheating chamber 14 to realize a plurality of pieces.
  • the wafer is evenly heated and fully heated.
  • the lifting mechanism B19 drives the wafer holder 16 down to the lower film chamber 17, and descends layer by layer, so that the robot can take out the wafer.
  • the removed wafer is fed into the reaction chamber 4 by the robot of the transfer chamber 2 for deposition reaction.
  • the deposited wafer in the reaction chamber 4 is taken out by the robot of the transfer chamber 2, and returned to the device front end module 1 via the transfer chamber 2.

Abstract

一种通过真空装载腔为晶圆预热的装置及方法，通过增加一个可加热的真空装载腔，在沉积反应前对晶圆进行预加热，当晶圆温度满足要求时，再将晶圆送入反应腔进行沉积反应，以增加效率，提高产能。根据不同工艺流程在不同位置挂载不同结构的预热腔，以实现对晶圆的预热、加热或保温等功能。该装置及方法应用于半导体薄膜沉积应用及制造技术领域。

Description

一种通过真空装载腔为晶圆预热的装置及方法 技术领域
本发明涉及一种通过真空装载腔为晶圆预热的装置及方法，该真空装载腔可依据不同的工艺流程要求挂载在设备上的不同位置，以达到对晶圆 的加热、预热或保温等要求，属于半导体薄膜沉积应用及制造技术领域。
背景技术
半导体镀膜设备在进行沉积反应时，需要使晶圆达到一定的温度，才能沉积出质量符合要求的薄膜。现有半导体镀膜设备大都使晶圆进入反应腔体后停留一段时间，并在停留时通过加热装置或等离子体轰击等方式使晶圆达到沉积反应所需的温度。但是，如停留加热时间短，晶圆未完全达到反应所需温度，则会影响成膜质量；如停留加热时间过长，则降低生产效率，影响产能，增加成本。
技术问题
本发明以解决上述问题为目的，主要解决现有的晶圆加热方法及加热结构因加热时间及加热温度无法满足要求而带来的成膜质量不好或产能降低等问题。
技术解决方案
为实现上述目的，本发明通过增加一个可加热的真空装载腔，在沉积反应前对晶圆进行预加热，当晶圆温度满足要求时，再将晶圆送入反应腔进行沉积反应，以增加效率，提高产能 。并可根据不同的工艺要求挂载在不同位置，以实现对晶圆预热、加热或保温等其他特殊要求。
具体结构：一种通过真空装载腔为晶圆预热的装置，该装置采用在设备传片腔的两侧（或可根据其他工艺制程要求挂载于设备其他位置）挂载多片预热腔或单片预热腔，上述多片预热腔或单片预热腔可根据不同工艺流程要求挂载。上述多片预热腔或单片预热腔安装在传片腔的两侧，作为晶圆传输过程中预热及堆栈的场所。 其方法是在工艺过程中，晶圆由设备前端模块进入传片腔，并由传片腔中的机械手将其送往多片预热腔或单片预热腔，并在其中进行预热或加热，当温度达到要求后，由传片腔的机械手将其送入反应腔进行沉积反应。晶圆在进行沉积反应后也可根据工艺要求再传入预热腔进行保温等操作。
 有益效果
采用模块化设计理念，根据不同工艺流程在不同位置挂载不同结构的预热腔，以实现对晶圆的预热、加热或保温等功能。即可满足沉积反应所需温度，又有利于提高产能。
附图说明
图1是本发明的挂载位置示意图。
图2是单片预热腔俯视剖视图。
图3是单片预热腔主视剖视图。
图4是多片预热腔主视剖视图。
图中零件标号分别代表: 1、设备前端模块；2、传片腔；3、多片预热腔；4、反应腔；5、单片预热腔；6、加热板；7、顶针；8、预热腔室；9、传片口；10、预热腔盖板A；11、顶针支板； 12、升降机构A； 13、机架；14、上部预热腔室；15、加热管；16、晶圆支架；17、下部传片腔室; 18、预热腔盖板B；19、升降机构B。
 本发明的最佳实施方式
下面结合附图和实施例对本发明作进一步的说明。
具体实施方式
实施例1
如图1、图2和图3所示，一种通过真空装载腔为晶圆预热的装置，该装置中的单片预热腔5由加热板6、顶针7、预热腔室8、预热腔盖板A10、顶针支板11、升降机构A12及机架13组成。其中预热腔室8及预热腔室盖板A10形成一个独立的腔室空间，在预热腔室8内部安装有加热板6以实现加热功能，预热腔室8下方安装机架13用来支撑升降机构A12，升降机构A12上方安装顶针支板11，顶针支板11上放置顶针7,用以实现取送片操作。 工作时，晶圆由设备前端模块1进入传片腔2，传片腔2的机械手托取晶圆由传片口9传送进入单片预热腔5，升降机构A12推动顶针支板11将顶针7升起，顶针7顶部将晶圆从机械手上托起，机械手撤出后，升降机构A12带动顶针支板11下降，将顶针7落下，使晶圆落入加热板6内进行加热。加热板6内部有电热丝或其他加热装置，以使晶圆可以均匀快速的进行加热。当加热温度达到要求后，升降机构A12推动顶针支板11将顶针7升起，顶针7顶部将晶圆从加热板6上托起，传片腔2的机械手进入，升降机构A12带顶针支板11下降，将顶针7落下，使晶圆落入机械手上，并由机械手将晶圆由传片口9取出。取出的晶圆由传片腔2的机械手将其送入反应腔4进行沉积反应。反应完成后由传片腔2的机械手将反应腔4中沉积完成的晶圆取出，经由传片腔2返回至设备前端模块1。
本发明的实施方式
实施例2
如图1和图4所示，多片预热腔3由上部预热腔室14、加热管15、晶圆支架16、下部传片腔室17、预热腔盖板B18、升降机构B19组成。上部预热腔室14、下部传片腔室17及预热腔室盖板B18形成一个独立的腔室空间。在上部预热腔室14内均布安装有加热管15或加热灯等加热器件，以实现加热功能，下部传片腔室17下方安装升降机构B19，升降机构B19上方安装晶圆支架16,用以实现晶圆承载及取送片操作。上部预热腔室14及下部传片腔室17通过螺栓连接以形成一个完成的预热腔体。
工作时，晶圆由设备前端模块1进入传片腔2，传片腔2机械手将晶圆传送进入多片预热腔3，升降机构B19推动位于下部传片腔室17的晶圆支架16使之逐层升起，以便于机械手能够自由的将晶圆放置在晶圆支架的不同层次间，进行装片。装片完成后，升降机构B19推动晶圆支架16，使其进入上部预热腔室14，在上部预热腔室14内均布安装有加热管15或加热灯等加热器件，以实现多片晶圆均匀、充分加热。当加热温度满足后，升降机构B19带动晶圆支架16下降至下部传片腔室17，并逐层下降，以便于机械手将晶圆取出。取出的晶圆由传片腔2的机械手将其送入反应腔4进行沉积反应。反应完成后由传片腔2的机械手将反应腔4中沉积完成的晶圆取出，经由传片腔2返回至设备前端模块1。
 工业实用性
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Claims (1)

  1. 1、一种通过真空装载腔为晶圆预热的装置，其特征在于：该装置采用在设备传片腔的两侧挂载多片预热腔或单片预热腔，上述多片预热腔或单片预热腔可根据不同工艺流程要求挂载。
    2、如权利要求1所述的一种通过真空装载腔为晶圆预热的装置，其特征在于：所述的多片预热腔或单片预热腔可根据不同的工艺制程要求挂载于设备其他位置。
    3、如权利要求1所述的一种通过真空装载腔为晶圆预热的装置，其特征在于：上述的单片预热腔由加热板、顶针、预热腔室、预热腔盖板A、顶针支板、升降机构A及机架组成，其中预热腔室及预热腔室盖板A形成一个独立的腔室空间，在预热腔室内部安装有加热板以实现加热功能，预热腔室下方安装机架用来支撑升降机构A，升降机构A上方安装顶针支板，顶针支板上放置顶针,用以实现取送片操作。
    4、如权利要求1所述的一种通过真空装载腔为晶圆预热的装置，其特征在于：上述多片预热腔由上部预热腔室、加热管、晶圆支架、下部传片腔室、预热腔盖板B、升降机构B组成，上部预热腔室、下部传片腔室及预热腔室盖板B形成一个独立的腔室空间，在上部预热腔室内均布安装有加热管或加热灯等加热器件，以实现加热功能，下部传片腔室下方安装升降机构B，升降机构B上方安装晶圆支架,用以实现晶圆承载及取送片操作。
    5、一种通过真空装载腔为晶圆预热的方法，该方法是在工艺过程中，晶圆由设备前端模块进入传片腔，并由传片腔中的机械手将其送往多片预热腔或单片预热腔，并在其中进行预热或加热，当温度达到要求后，由传片腔的机械手将其送入反应腔进行沉积反应。
    6、如权利要求5所述的一种通过真空装载腔为晶圆预热的方法，该方法中传片腔的两侧挂载单片预热腔的实现步骤是：晶圆由设备前端模块进入传片腔，传片腔的机械手托取晶圆由传片口传送进入单片预热腔，升降机构A推动顶针支板将顶针升起，顶针顶部将晶圆从机械手上托起，机械手撤出后，升降机构A带动顶针支板下降，将顶针落下，使晶圆落入加热板内进行加热，加热板内部有电热丝或其他加热装置，以使晶圆可以均匀快速的进行加热，当加热温度达到要求后，升降机构A推动顶针支板将顶针升起，顶针顶部将晶圆从加热板上托起，传片腔的机械手进入，升降机构A带顶针支板下降，将顶针落下，使晶圆落入机械手上，并由机械手将晶圆由传片口取出，取出的晶圆由传片腔的机械手将其送入反应腔进行沉积反应，反应完成后由传片腔的机械手将反应腔中沉积完成的晶圆取出，经由传片腔返回至设备前端模块。
    7、如权利要求5所述的一种通过真空装载腔为晶圆预热的方法，该方法中传片腔的两侧挂载多片预热腔的实现步骤是：晶圆由设备前端模块进入传片腔，传片腔机械手将晶圆传送进入多片预热腔，升降机构B推动位于下部传片腔室的晶圆支架使之逐层升起，以便于机械手能够自由的将晶圆放置在晶圆支架的不同层次间，进行装片，装片完成后，升降机构B推动晶圆支架，使其进入上部预热腔室，在上部预热腔室内均布安装有加热管或加热灯，以实现多片晶圆均匀、充分加热，当加热温度满足后，升降机构B带动晶圆支架下降至下部传片腔室，并逐层下降，以便于机械手 将晶圆取出，取出的晶圆由传片腔的机械手将其送入反应腔进行沉积反应，反应完成后由传片腔的机械手将反应腔中沉积完成的晶圆取出，经由传片腔返回至设备前端模块。
    8、如权利要求5所述的一种通过真空装载腔为晶圆预热的方法，该方法中晶圆在进行沉积反应后也可根据工艺要求再传入预热腔进行保温的操作。
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