CN102859706B - 高能光子向电力的转换 - Google Patents

高能光子向电力的转换 Download PDF

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Publication number
CN102859706B
CN102859706B CN201180012910.6A CN201180012910A CN102859706B CN 102859706 B CN102859706 B CN 102859706B CN 201180012910 A CN201180012910 A CN 201180012910A CN 102859706 B CN102859706 B CN 102859706B
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China
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layer
energy
photon
transducer
layers
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Expired - Fee Related
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CN201180012910.6A
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English (en)
Chinese (zh)
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CN102859706A (zh
Inventor
T.塔吉马
M.宾德鲍尔
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TAE Technologies Inc
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Tri Alpha Energy Inc
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Priority to CN201610882742.0A priority Critical patent/CN107123692B/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/301—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to very short wavelength, e.g. being sensitive to X-rays, gamma-rays or corpuscular radiation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/28—Measuring radiation intensity with secondary-emission detectors
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21H—OBTAINING ENERGY FROM RADIOACTIVE SOURCES; APPLICATIONS OF RADIATION FROM RADIOACTIVE SOURCES, NOT OTHERWISE PROVIDED FOR; UTILISING COSMIC RADIATION
    • G21H1/00—Arrangements for obtaining electrical energy from radioactive sources, e.g. from radioactive isotopes, nuclear or atomic batteries
    • G21H1/04—Cells using secondary emission induced by alpha radiation, beta radiation, or gamma radiation
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21H—OBTAINING ENERGY FROM RADIOACTIVE SOURCES; APPLICATIONS OF RADIATION FROM RADIOACTIVE SOURCES, NOT OTHERWISE PROVIDED FOR; UTILISING COSMIC RADIATION
    • G21H1/00—Arrangements for obtaining electrical energy from radioactive sources, e.g. from radioactive isotopes, nuclear or atomic batteries
    • G21H1/06—Cells wherein radiation is applied to the junction of different semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/161—Photovoltaic cells having only PN heterojunction potential barriers comprising multiple PN heterojunctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/542—Dye sensitized solar cells

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  • High Energy & Nuclear Physics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Molecular Biology (AREA)
  • Health & Medical Sciences (AREA)
  • Particle Accelerators (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • X-Ray Techniques (AREA)
  • Luminescent Compositions (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Surface Treatment Of Glass (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
CN201180012910.6A 2010-01-08 2011-01-01 高能光子向电力的转换 Expired - Fee Related CN102859706B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201610882742.0A CN107123692B (zh) 2010-01-08 2011-01-01 高能光子向电力的转换

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US29328210P 2010-01-08 2010-01-08
US61/293282 2010-01-08
PCT/US2011/020001 WO2011084903A1 (en) 2010-01-08 2011-01-01 Conversion of high-energy photons into electricity

Related Child Applications (1)

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CN102859706A CN102859706A (zh) 2013-01-02
CN102859706B true CN102859706B (zh) 2016-10-26

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US (3) US9324897B2 (enExample)
EP (1) EP2522033B1 (enExample)
JP (3) JP6097563B2 (enExample)
KR (1) KR101962974B1 (enExample)
CN (2) CN107123692B (enExample)
AR (1) AR079858A1 (enExample)
AU (2) AU2010339631B2 (enExample)
BR (1) BR112012016873B1 (enExample)
CA (1) CA2786590C (enExample)
EA (1) EA025124B1 (enExample)
ES (1) ES2705690T3 (enExample)
IL (2) IL220819A (enExample)
MX (1) MX2012007991A (enExample)
NZ (1) NZ601448A (enExample)
PH (1) PH12012501379A1 (enExample)
SG (1) SG182383A1 (enExample)
TW (2) TWI463681B (enExample)
UA (1) UA111585C2 (enExample)
WO (1) WO2011084903A1 (enExample)
ZA (1) ZA201205568B (enExample)

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US10269463B2 (en) * 2015-02-03 2019-04-23 The United States Of America As Represented By The Administrator Of Nasa Nuclear thermionic avalanche cells with thermoelectric (NTAC-TE) generator in tandem mode
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CN107783170A (zh) * 2017-09-28 2018-03-09 摩瑞尔电器（昆山）有限公司 采用复合结构壳体的伽马射线检测设备
US10811144B2 (en) 2017-11-06 2020-10-20 General Fusion Inc. System and method for plasma generation and compression
US10886452B2 (en) 2018-01-25 2021-01-05 United States Of America As Represented By The Administrator Of Nasa Selective and direct deposition technique for streamlined CMOS processing
US10818467B2 (en) * 2018-02-09 2020-10-27 Imagine Scientific, Inc. Monochromatic x-ray imaging systems and methods
KR20250021627A (ko) * 2018-02-09 2025-02-13 이매진 싸이언티픽, 인크. 단색 엑스선 영상 시스템 및 방법
US11037687B2 (en) 2018-03-13 2021-06-15 United States Of America As Represented By The Administrator Of Nasa Co-60 breeding reactor tandem with thermionic avalanche cell
US11004666B2 (en) 2018-03-15 2021-05-11 United States Of America As Represented By The Administrator Of Nasa Portable miniaturized thermionic power cell with multiple regenerative layers
US10985676B2 (en) 2018-03-15 2021-04-20 United States Of America As Represented By The Administrator Of Nasa High performance electric generators boosted by nuclear electron avalanche (NEA)
US11257604B2 (en) 2018-05-30 2022-02-22 United States Of America As Represented By The Administrator Of Nasa Multi-layered radio-isotope for enhanced photoelectron avalanche process
KR102091228B1 (ko) * 2018-06-05 2020-03-19 서울방사선서비스주식회사 외부 피폭 선량계를 위한 대면적/연속식 품질 관리 시스템 및 방법
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Publication number Publication date
BR112012016873B1 (pt) 2020-10-20
AU2016201030B2 (en) 2017-03-23
JP6097563B2 (ja) 2017-03-15
TW201507176A (zh) 2015-02-16
BR112012016873A2 (pt) 2018-06-05
IL250054A0 (en) 2017-03-30
UA111585C2 (uk) 2016-05-25
AU2010339631A1 (en) 2012-08-09
WO2011084903A1 (en) 2011-07-14
EP2522033A1 (en) 2012-11-14
JP2013516624A (ja) 2013-05-13
AU2016201030A1 (en) 2016-03-10
CA2786590C (en) 2019-04-30
AR079858A1 (es) 2012-02-22
US9893226B2 (en) 2018-02-13
CA2786590A1 (en) 2011-07-14
US9570644B2 (en) 2017-02-14
SG182383A1 (en) 2012-08-30
CN107123692A (zh) 2017-09-01
TW201145535A (en) 2011-12-16
KR20120134107A (ko) 2012-12-11
US20130125963A1 (en) 2013-05-23
IL220819A (en) 2017-02-28
US9324897B2 (en) 2016-04-26
ES2705690T3 (es) 2019-03-26
KR101962974B1 (ko) 2019-03-27
AU2010339631B2 (en) 2015-11-19
MX2012007991A (es) 2012-12-10
JP2016148683A (ja) 2016-08-18
PH12012501379A1 (en) 2012-10-22
JP6327722B2 (ja) 2018-05-23
US20170236967A1 (en) 2017-08-17
EA201290620A1 (ru) 2013-01-30
NZ601448A (en) 2014-09-26
CN102859706A (zh) 2013-01-02
TWI552362B (zh) 2016-10-01
TWI463681B (zh) 2014-12-01
IL250054B (en) 2021-04-29
ZA201205568B (en) 2013-09-25
EA025124B1 (ru) 2016-11-30
US20160218235A1 (en) 2016-07-28
CN107123692B (zh) 2020-02-11
EP2522033A4 (en) 2016-04-20
JP2018028552A (ja) 2018-02-22
EP2522033B1 (en) 2018-11-14

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