AU2010339631B2 - Conversion of high-energy photons into electricity - Google Patents

Conversion of high-energy photons into electricity Download PDF

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Publication number
AU2010339631B2
AU2010339631B2 AU2010339631A AU2010339631A AU2010339631B2 AU 2010339631 B2 AU2010339631 B2 AU 2010339631B2 AU 2010339631 A AU2010339631 A AU 2010339631A AU 2010339631 A AU2010339631 A AU 2010339631A AU 2010339631 B2 AU2010339631 B2 AU 2010339631B2
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AU
Australia
Prior art keywords
layers
converter
layer
high energy
photon
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Ceased
Application number
AU2010339631A
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English (en)
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AU2010339631A1 (en
Inventor
Michl Binderbauer
Toshiki Tajima
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TAE Technologies Inc
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TAE Technologies Inc
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Application filed by TAE Technologies Inc filed Critical TAE Technologies Inc
Publication of AU2010339631A1 publication Critical patent/AU2010339631A1/en
Application granted granted Critical
Publication of AU2010339631B2 publication Critical patent/AU2010339631B2/en
Priority to AU2016201030A priority Critical patent/AU2016201030B2/en
Assigned to TAE TECHNOLOGIES, INC. reassignment TAE TECHNOLOGIES, INC. Request to Amend Deed and Register Assignors: TRI ALPHA ENERGY, INC.
Ceased legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/301Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to very short wavelength, e.g. being sensitive to X-rays, gamma-rays or corpuscular radiation
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01TMEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16Measuring radiation intensity
    • G01T1/28Measuring radiation intensity with secondary-emission detectors
    • GPHYSICS
    • G21NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21HOBTAINING ENERGY FROM RADIOACTIVE SOURCES; APPLICATIONS OF RADIATION FROM RADIOACTIVE SOURCES, NOT OTHERWISE PROVIDED FOR; UTILISING COSMIC RADIATION
    • G21H1/00Arrangements for obtaining electrical energy from radioactive sources, e.g. from radioactive isotopes, nuclear or atomic batteries
    • G21H1/04Cells using secondary emission induced by alpha radiation, beta radiation, or gamma radiation
    • GPHYSICS
    • G21NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21HOBTAINING ENERGY FROM RADIOACTIVE SOURCES; APPLICATIONS OF RADIATION FROM RADIOACTIVE SOURCES, NOT OTHERWISE PROVIDED FOR; UTILISING COSMIC RADIATION
    • G21H1/00Arrangements for obtaining electrical energy from radioactive sources, e.g. from radioactive isotopes, nuclear or atomic batteries
    • G21H1/06Cells wherein radiation is applied to the junction of different semiconductor materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00Individual photovoltaic cells, e.g. solar cells
    • H10F10/10Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/161Photovoltaic cells having only PN heterojunction potential barriers comprising multiple PN heterojunctions, e.g. tandem cells
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/10Semiconductor bodies
    • H10F77/12Active materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/10Semiconductor bodies
    • H10F77/14Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/40Optical elements or arrangements
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/542Dye sensitized solar cells

Landscapes

  • High Energy & Nuclear Physics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Molecular Biology (AREA)
  • Health & Medical Sciences (AREA)
  • Particle Accelerators (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • X-Ray Techniques (AREA)
  • Surface Treatment Of Glass (AREA)
  • Luminescent Compositions (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
AU2010339631A 2010-01-08 2011-01-01 Conversion of high-energy photons into electricity Ceased AU2010339631B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2016201030A AU2016201030B2 (en) 2010-01-08 2016-02-19 Conversion of high-energy photons into electricity

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US29328210P 2010-01-08 2010-01-08
US61/293,282 2010-01-08
PCT/US2011/020001 WO2011084903A1 (en) 2010-01-08 2011-01-01 Conversion of high-energy photons into electricity

Related Child Applications (1)

Application Number Title Priority Date Filing Date
AU2016201030A Division AU2016201030B2 (en) 2010-01-08 2016-02-19 Conversion of high-energy photons into electricity

Publications (2)

Publication Number Publication Date
AU2010339631A1 AU2010339631A1 (en) 2012-08-09
AU2010339631B2 true AU2010339631B2 (en) 2015-11-19

Family

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Family Applications (2)

Application Number Title Priority Date Filing Date
AU2010339631A Ceased AU2010339631B2 (en) 2010-01-08 2011-01-01 Conversion of high-energy photons into electricity
AU2016201030A Ceased AU2016201030B2 (en) 2010-01-08 2016-02-19 Conversion of high-energy photons into electricity

Family Applications After (1)

Application Number Title Priority Date Filing Date
AU2016201030A Ceased AU2016201030B2 (en) 2010-01-08 2016-02-19 Conversion of high-energy photons into electricity

Country Status (20)

Country Link
US (3) US9324897B2 (enExample)
EP (1) EP2522033B1 (enExample)
JP (3) JP6097563B2 (enExample)
KR (1) KR101962974B1 (enExample)
CN (2) CN107123692B (enExample)
AR (1) AR079858A1 (enExample)
AU (2) AU2010339631B2 (enExample)
BR (1) BR112012016873B1 (enExample)
CA (1) CA2786590C (enExample)
EA (1) EA025124B1 (enExample)
ES (1) ES2705690T3 (enExample)
IL (2) IL220819A (enExample)
MX (1) MX2012007991A (enExample)
NZ (1) NZ601448A (enExample)
PH (1) PH12012501379A1 (enExample)
SG (1) SG182383A1 (enExample)
TW (2) TWI552362B (enExample)
UA (1) UA111585C2 (enExample)
WO (1) WO2011084903A1 (enExample)
ZA (1) ZA201205568B (enExample)

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SG182383A1 (en) 2010-01-08 2012-08-30 Tri Alpha Energy Inc Conversion of high-energy photons into electricity
CN104604338B (zh) 2012-08-29 2017-06-13 全面熔合有限公司 用于加速和压缩等离子体的设备和系统
SG10202008475UA (en) * 2014-03-03 2020-09-29 Brilliant Light Power Inc Photovoltaic power generation systems and methods regarding same
WO2015200551A1 (en) 2014-06-24 2015-12-30 Silver Eric H Methods and apparatus for determining information regarding chemical composition using x-ray radiation
WO2015200494A1 (en) 2014-06-25 2015-12-30 Mayo Foundation For Medical Education And Research System and method for quantitative muscle ultrasound for diagnosis of neuromuscular disease
JP6429996B2 (ja) 2014-08-19 2018-11-28 ジェネラル フュージョン インコーポレイテッド プラズマ磁場を制御するためのシステム及び方法
US10269463B2 (en) * 2015-02-03 2019-04-23 The United States Of America As Represented By The Administrator Of Nasa Nuclear thermionic avalanche cells with thermoelectric (NTAC-TE) generator in tandem mode
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CN111225613B (zh) 2017-05-19 2024-08-02 想像科学有限公司 单色x射线成像系统及方法
CN107783170A (zh) * 2017-09-28 2018-03-09 摩瑞尔电器(昆山)有限公司 采用复合结构壳体的伽马射线检测设备
US10811144B2 (en) 2017-11-06 2020-10-20 General Fusion Inc. System and method for plasma generation and compression
US10886452B2 (en) 2018-01-25 2021-01-05 United States Of America As Represented By The Administrator Of Nasa Selective and direct deposition technique for streamlined CMOS processing
EP3749203A4 (en) * 2018-02-09 2021-11-03 Imagine Scientific, Inc. MONOCHROMATIC X-RAY IMAGING SYSTEMS AND METHODS
US10818467B2 (en) * 2018-02-09 2020-10-27 Imagine Scientific, Inc. Monochromatic x-ray imaging systems and methods
US11037687B2 (en) 2018-03-13 2021-06-15 United States Of America As Represented By The Administrator Of Nasa Co-60 breeding reactor tandem with thermionic avalanche cell
US11004666B2 (en) 2018-03-15 2021-05-11 United States Of America As Represented By The Administrator Of Nasa Portable miniaturized thermionic power cell with multiple regenerative layers
US10985676B2 (en) 2018-03-15 2021-04-20 United States Of America As Represented By The Administrator Of Nasa High performance electric generators boosted by nuclear electron avalanche (NEA)
US11257604B2 (en) 2018-05-30 2022-02-22 United States Of America As Represented By The Administrator Of Nasa Multi-layered radio-isotope for enhanced photoelectron avalanche process
KR102091228B1 (ko) * 2018-06-05 2020-03-19 서울방사선서비스주식회사 외부 피폭 선량계를 위한 대면적/연속식 품질 관리 시스템 및 방법
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US11581104B2 (en) 2019-05-21 2023-02-14 United States Of America As Represented By The Administrator Of Nasa Multi-layer structure of nuclear thermionic avalanche cells
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US12310143B2 (en) 2021-03-22 2025-05-20 Yttrium SAIYAN Methods, systems, and apparatuses for producing, generating and utilizing power and energy
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Also Published As

Publication number Publication date
CN102859706A (zh) 2013-01-02
CN107123692A (zh) 2017-09-01
US9893226B2 (en) 2018-02-13
TWI463681B (zh) 2014-12-01
KR101962974B1 (ko) 2019-03-27
IL250054A0 (en) 2017-03-30
IL220819A (en) 2017-02-28
CN102859706B (zh) 2016-10-26
US9570644B2 (en) 2017-02-14
EP2522033A4 (en) 2016-04-20
ES2705690T3 (es) 2019-03-26
US20170236967A1 (en) 2017-08-17
KR20120134107A (ko) 2012-12-11
BR112012016873B1 (pt) 2020-10-20
TW201145535A (en) 2011-12-16
JP2013516624A (ja) 2013-05-13
WO2011084903A1 (en) 2011-07-14
JP2016148683A (ja) 2016-08-18
EA025124B1 (ru) 2016-11-30
BR112012016873A2 (pt) 2018-06-05
JP2018028552A (ja) 2018-02-22
TW201507176A (zh) 2015-02-16
SG182383A1 (en) 2012-08-30
TWI552362B (zh) 2016-10-01
IL250054B (en) 2021-04-29
EP2522033B1 (en) 2018-11-14
AR079858A1 (es) 2012-02-22
CA2786590C (en) 2019-04-30
PH12012501379A1 (en) 2012-10-22
CN107123692B (zh) 2020-02-11
JP6097563B2 (ja) 2017-03-15
EP2522033A1 (en) 2012-11-14
AU2016201030B2 (en) 2017-03-23
US9324897B2 (en) 2016-04-26
EA201290620A1 (ru) 2013-01-30
US20130125963A1 (en) 2013-05-23
JP6327722B2 (ja) 2018-05-23
MX2012007991A (es) 2012-12-10
UA111585C2 (uk) 2016-05-25
AU2016201030A1 (en) 2016-03-10
NZ601448A (en) 2014-09-26
AU2010339631A1 (en) 2012-08-09
CA2786590A1 (en) 2011-07-14
ZA201205568B (en) 2013-09-25
US20160218235A1 (en) 2016-07-28

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Owner name: TAE TECHNOLOGIES, INC.

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MK14 Patent ceased section 143(a) (annual fees not paid) or expired